PMN-PT:Er3+铁电晶体的光谱特性与J-O理论分析

为了探索Er3+在Pb(Mg1/3Nb2/3)-PbTiO3弛豫铁电晶体场中的发光特性,采用高温溶液法生长了PMN-32PT:Er3+弛豫铁电单晶,测试并分析了该晶体的微观形貌、相结构、吸收光谱与上转换发射光谱,利用Judd-Ofelt理论计算了Er3+在PMN-32PT晶体场中的J-O振子强度参数.该晶体四方相晶胞参数为a=0.4023 nm,c=0.4033 nm,V=0.06523 nm3,单斜相晶胞参数为a=0.4035 nm,b=0.4032 nm,c=0.4031 nm,V=0.06557 nm3.振子强度参数Ω2=1.77×10-20 cm2,Ω4=1.50×10-20 cm2,Ω6=0.79×10-20 cm2,δrms=0.18×10-6;4 I11/2的理论能级寿命τ=1.75 ms.样品晶体在980 nm光源激发下,发射出了很强的绿光(552 nm).研究结果表明PMN-PT:Er3+单晶是一种性能优异的新型发光晶体.     

一种新型双核锰(Ⅱ)配合物的合成、表征及磁性能研究

以Mn(CH3COO)2·4H2O和邻羟基苯甲醛缩4-氨基安替比林为原料,采用溶剂热法成功合成出一个新型双核锰(Ⅱ)配合物([Mn(L-)(CH3 COO)2]HL=邻羟基苯甲醛缩4-氨基安替比林),并通过X射线单晶衍射、红外光谱、元素分析、热重分析、X-粉末衍射、磁性分析和紫外分析等手段对该配合物进行表征及性质研究.结果表明双核锰配合物属于三斜晶系,空间群为P1,晶胞参数:a=0.81298(7) nm,b =0.95766(9) nm,c=1.32046(12) nm,α=100.9290(10)°,β=90.3510 (10)°,γ=108.7220 (10)°,V=0.95351(15) nm3,Z=1,Dc=1.464 Mg/m3,F (000)=434,μ=0.724 mm-1,R1=0.0346,wR2=0.1106 [I＞2σ-(I)].     

多取代茚并[1,2-d]哒嗪的合成和结构表征

标题化合物C38.50H32Cl2N2O4S2是由3-(2-(对氯苯基乙炔基)苯基)-1-(对甲苯基)丙-2-烯-1-酮、对甲苯磺酰肼在室温的空气条件下使用TBHP/I2系统,在乙腈(CH3CN)作为溶剂中反应得到.通过单晶X射线衍射法测定结构,其晶体属三斜晶系,空间群P-1,a=1.15045(9) nm,b=1.18251(10) nm,c=1.31168(12) nm,α=95.8450(10)°,β=101.153(2)°,γ=92.9430(10)°,V=1.7370(3) nm3,相对分子质量Mr=721.68,晶胞密度Dc=1.380g/cm3,Z=2,λ=0.071073 nm,吸收系数μ(MoKα)=0.351 mm-1,F(000) =750,最终偏离因子R=0.0802,wR =0.1783,S=1.003,(△/σ)max=0.001,(△ρ)min=323 e/nm3和(△ρ)max=-463 e/nm3.文中分析了新形成的哒嗪环为船式构象.苯环(C11-C16)和哒嗪环基本是平行的,茚环上的五元环接近共面.     

非致冷In0.53Ga0.47 As/InP红外探测器研究

采用LPMOCVD技术生长了InGaAs红外探测器器件结构材料,其晶格失配为2.19×10-4.利用锌扩散制备探测器单元器件,光谱响应范围为0.90～1.70μm,在1.95V偏压下,暗电流为5.75×10-5A,在反向偏压为-5V时,电容为6.96×10-12F.探测器波段探测率为2.08×1011cmHz1/2W-1.     

以1,4-DAB为溶剂(1,4-DABH2)2Sn2S6·(1,4-DAB)和(1,4-DABH2)Sb4S7的合成与表征

以1,4-丁二胺为溶剂合成两种硫属化合物(1,4-DABH2)2Sn2S6·(1,4-DAB)(1)和(1,4-DABH2) Sb4S7(2)(1,4-DAB =1,4-丁二胺),单晶X-射线衍射分析表明化合物1为单斜晶系,空间群为P21/c,a=1.0862(5) nm,b=1.3053(6) nm,c=1.0283(5) nm,β=101.20(2)°,V=1.4302(12) nm3,Z=2;化合物2为三斜晶系,空间群为P-1,a=0.6009(4) nm,b =0.8989(7) nm,c=1.6548(12) nm,α =89.774(12)°,β=86.481 (12)°,γ=84.495(12)°,V=0.8880(11)nm3,Z=2.化合物1由离散的[Sn2S6]2+、质子化的有机胺和未质子化有机胺组成.化合物2是由质子化的有机胺和双链的[Sb4S7]2-离子组成的二维层状化合物.紫外-可见漫反射光谱研究结果表明,化合物1和2的禁带宽度分别为1.80 eV和1.54 eV,均为半导体.     

4-硝基氮氧化吡啶-2-甲酸构筑的镧、镨配合物的合成、晶体结构及荧光性质

选择刚性有机化合物4-硝基氮氧化吡啶-2-甲酸(POA)作为配体,与稀土金属La(III)、Pr(III)反应,合成了2个一维配位聚合物。X射线单晶衍射结果表明：配合物1的分子式为{[La(POA)₃H₂O]·CH₃OH}_n,属于单斜晶系,空间群是P2₁/c。该晶胞参数分别为a=1.756 8 nm,b=0.663 6 nm,c=2.048 6 nm,α=90°,β=96.96°,γ=90°,V=2.370 7 nm³,M_r=738.28。配合物2的分子式为{[Pr(POA)₃H₂O]·H₂O}_n,属于单斜晶系,空间群是P2₁/c。该晶胞参数分别为a=1.757 8 nm,b=0.656 9 nm,c=2.046 7 nm,α=90°,β=97.20°,γ=90°,V=2.344 8 nm³,M_...     

三维配位聚合物[Co(pda)(SCN)(H2O)]n [pda=3-(3-吡啶基)丙烯酸]的合成和晶体结构

以CoCl2、3-(3-吡啶基)丙烯酸(pda)和KSCN为原料,在水热反应条件下,合成了一种三维配位聚合物[Co(pda)(SCN)(H2O)]n晶体,对其进行了元素分析、红外光谱表征、X射线单晶衍射测定和热重分析.该配位聚合物属三斜晶系,P-1空间群,晶胞参数为a=0.7309(5)nm,b=0.8799(6)nm,c=0.9634(6)nm,α=68.128(10)°,β=73.241(11)°,γ=71.218(12)°,V=0.5343(6)nm3,Z=2,dc=1.760g/cm3,μ=1.792mm-1,F(000)＝268,R1=0.0450, wR2= 0.1035.X射线单晶衍射显示形成一个三维的网络结构.     

一种新型非线性分子C22H22N4O3的合成、晶体结构及表征

设计并合成了一种新型的非线性材料分子,2-二氰基甲叉-3-氰基-4-[2-N,N-二羟基乙基氨基苯乙烯基]-5,5-二甲基-2,5-二氢呋喃.用红外光谱、核磁共振氢谱和元素分析对其进行了表征,用X射线单晶衍射仪测定了其晶体结构,该晶体属于三斜晶系,空间群为P-1,晶胞参数分别为a=9.5364(12)nm,b=10.1030(15)nm,c=13.599(2)nm,α=91.306(2)°,β=102.046(3)°,γ=117.149(3)°,Dc=1.148 g/cm3,Z=2,F(000)=412,V=1129.7(3)nm3.     

钒酸镝晶体生长和磁光性能研究

采用液相沉淀法制备了钒酸镝(DyVO4)粉体,使用提拉法生长了DyVO4磁光晶体,通过XRD确定生长的DyVO4晶体没有杂相,晶体的晶胞参数是a =b =0.71434 nm,c =0.6313 nm,α=β=γ=90°,属于四方晶系.晶体经过定向切割加工成c轴晶向的片状和柱状样品.测试了DyVO4晶体样品的光学性能和磁光性能.结果 显示,样品在500～700 nm波长范围内,具有很高的透过率,在76;～ 79;之间,DyVO4晶体对应于532 nm、633 nm和980 nm的Verdet常数分别为-309 rad/m/T、-167 rad/m/T和-64 rad/m/T,性能优于商用磁光晶体TGG,有望在可见光波段实现应用.     

粉体粒径对CSLST微波介质陶瓷烧结温度的影响

采用B2O3-CuO-LiCO3(BCL)玻璃料作为烧结助剂,通过增加球磨时间的方法,对(Ca18/19 Sr1/19)0.2(Li0.5Sm0.5)0.8TiO3(CSLST)微波介质陶瓷进行低温烧结.研究了不同含量的BCL烧结助剂对CSLST微波介质陶瓷低温烧结特性的影响,和不同球磨时间对含2wt; BCL烧结助剂的CSLST微波介质陶瓷粉体颗粒度及低温烧结的影响.结果表明:球磨后的粉体粒径均分布在0.1 ～0.4 μm之间,d50为0.170 μm,比表面积达到35.2 m2/g且具有较高的表面活性,可以在875℃保温5h完全烧结.该陶瓷的微波介电性能为:介电常数εr=81.3,品质因素Q×f=1886 GHz,谐振频率温度系数Tr=-27.6×10-6/℃.     

放电等离子烧结制备Ba2+掺杂γ-La2S3陶瓷及其性能研究

以气固反应硫化制备的γ-La2S3粉体为原料,采用放电等离子烧结(SPS)技术制备出γ-La2S3多晶陶瓷.研究了Ba2+掺杂量对得到γ-La2S3粉体物相结构的影响,并分析了烧结温度、再硫化工艺参数对γ-La2S3多晶陶瓷微观组织结构和红外透过率的影响.结果表明:掺入Ba2有利于低温获得稳定的高温型γ-La2S3相,在nLa/nBa为5 ～15时能够得到纯相的γ-La2S3粉体.在烧结温度为1150℃,保温时间为5min时制备出的γ-La2S3陶瓷致密,无明显气孔,在CS2气氛下再硫化2.5h后,在10 ～ 14μm波段的红外峰值透过率达到42％.     

Te溶剂Bridgman法CdMnTe晶体核辐射探测器的制备和表征

碲锰镉(CdMnTe)作为性能优异的室温核辐射探测器材料,可用于环境监测和工业无损检测领域。本文中采用Te溶剂Bridgman法生长In掺杂Cd_0.9Mn_0.1Te晶体,制备成10 mm×10 mm×2 mm大小的室温单平面探测器,研究了该探测器对²⁴¹Am@59.5 keV γ射线源的能谱响应。通过表征红外透过率、电阻率以及探测器能谱响应等参数,综合评定了探测器用CdMnTe晶体的质量、电学和探测器性能。结果表明,晶片的红外透过率均在55%以上,最好可达到60%。采用湿法钝化,100 V偏压下的漏电流由钝化前的9.48 nA降为钝化后的7.90 nA,钝化后的电阻率为2.832×10¹⁰ Ω·cm。在-400 V反向偏压下,CdMnTe探测器对²⁴¹Am@59.5 keV γ射线源的能量分辨率在钝化前后分别为13.53%和12.51%,钝化后的电子迁移率寿命积为1.049×10^-3 cm²/V。研究了探测器的能量分辨率随电压的变化特性,当偏压≤400 V时,探测器的能量分辨率主要由载流子的收集效率决定,而当偏压>400 V时,能量分辨率由漏电流决定。本文研究结果表明,Te溶剂Bridgman法生长的CdMnTe晶体质量较好,电阻率和电子迁移率寿命积满足探测器制备需求。     

V2O5掺杂对0.6SrTiO3-0.4LaAlO3微波介质陶瓷结构与性能的影响

采用固相反应法,研究了V2O5添加量与0.6SrTiO3-0.4LaAlO3(简称6ST-4LA)陶瓷烧结性能及介电性能之间的变化关系.结果表明:少量V2O5的引入未改变陶瓷的晶相组成,主晶相仍为SrTiO3基固溶体,适量添加V2O5不仅能显著降低6ST-4LA陶瓷的烧结温度,而且能增大其介电常数和品质因数(Q·f),调节谐振频率温度系数τf;随着V2O5添加量的继续增加,有第二相SrVO3出现并逐渐增多.当V2O5添加量为0.10wt;,1450 ℃烧结时,6ST-4LA陶瓷获得最佳微波介电性能:εr=46.46,Q·f=59219 GHz,τf=3×10-6 /℃.     

硼磷酸盐晶体BaBPO5的非线性光学系数研究

用Maker条纹方法测量了硼磷酸盐晶体BaBPO5的非线性光学系数d11(BaBPO5)=(0.439±O.002)d36(KH2PO4),d12(BaBPO5)=(0.425±0.008)d36(KH2PO4),相应的相干长度为:l11=16.985±0.301μm,l12=16.972±0.304μm.确定了非线性光学系数的相对符号,d11(BaBPO5)和d12(BaBPO5)符号相反.BaBPO5晶体激光损伤阈值大于900 MW/cm2.     

Growth and characterization of photorefractive Bi12TiO20 single crystals

Photorefractive Bi₁₂TiO₂₀ single crystals of high optical quality were grown in a resistive heating furnace from high temperature nonstoichiometric (10:1) solutions of Bi₂O₃ and TiO₂ at pulling rates 0.3–0.8 mm/h at rotation 20–30 rpm along the <001> and <011> axis. Powder X-ray analysis, Laue method, and electron-probe microanalysis were used for characterization. BTO crystals have the bcc structure of sillenite type with a₀ = 10.178(8) Å. The chemical composition of the crystals can be written down as Bi_{12.1 ± 0.2}Tio_{0.96 ± 0.09}O_20.1. Natural optical activity ρ of BTO crystals is 6.3 ± 0.2 deg/mm at λ = 0.633 μm and 11.9 ± 0.2 deg/mm at λ = 0.5145 μm, optical absorption coefficient α = 0.42 ± 0.04 cm⁻¹ at λ = 0.633 μm and linear electro-optic coefficient r₄₁ = r₅₂ = r₆₃ = 5.3 pm/V. Fanning effect in the “fiber-like” BTO sample was studied and double phase conjugation with conversion efficiency up to 8% was observed in a wide range of incidence angles of the pump at λ = 0.633 μm for 2 × 3 mW input light power.     

4H-SiC同质外延生长及Ti/4H-SiC肖特基二极管

利用台阶控制外延生长技术在偏晶向Si-面衬底上进行了4H-SiC的同质外延生长研究,衬底温度为1500℃,在厚度为32μm、载流子浓度为2～5×1015cm-3的外延材料上制备出了反向阻塞电压大于1kV的Ti/4H-SiC肖特基二极管,二极管的正向与反向电流的整流比(定义偏压为±1V时的电流比值)在室温下超过107,在265℃的温度下超过102,在20～265℃的温度范围内,利用电流电压测量研究了二极管的电学特性,室温下二极管的理想因子和势垒高度分别为1.33和0.905eV,开态电流密度在2.0V的偏压下达到150A/cm2,比开态电阻(Ron)为7.9mΩ·cm2,与温度的关系遵守Ron～T2.0规律.     

钆镱共掺杂铝酸钇晶体的生长及性能研究

采用单晶提拉法成功生长出优质的Gd³⁺/Yb³⁺共掺铝酸钇晶体。对晶体的结构、分凝系数、光谱和激光性能进行了表征,结果表明:所生长的晶体空间群为Pnma,属于正交晶系,Yb³⁺的分凝系数为1.13。从偏振吸收和荧光光谱发现,b偏振方向时,晶体在980 nm处吸收截面为2.14×10^-20 cm²,适用于InGaAs 激光二极管泵浦;在1 044 nm处的发射截面为0.39×10^-20 cm²,荧光寿命为1.638 ms。此外,对b切向的Gd/Yb∶YAP晶体进行激光实验,在1 μm处实现连续激光输出,斜率效率为23.5%,最大输出功率可达0.51 W。     

Temperature‐tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals

The optical properties of Tl₂InGaSe₄ layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500‐1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10‐300 K revealed that the rate of change of the indirect band gap with temperature is γ = – 4.4 × 10^‐4 eV/K. The absolute zero value of the band gap energy was obtained as E_gi(0) = 1.95 eV. The dispersion of the refractive index is discussed in terms of the single oscillator model. The refractive index dispersion parameters: oscillator wavelength and strength were found to be 2.53 × 10^–7 m and 9.64 × 10¹³ m^–2, respectively. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and spectral properties of Nd:LaVO4 crystal

This paper reports the growth and spectral properties of 3.5 at% Nd³⁺:LaVO₄ crystal with diameter of 20×15 mm² which has been grown by the Czochralski method. The spectral parameters were calculated based on Judd–Ofelt theory. The intensity parameters Ω_λ are: Ω₂=2.102×10⁻²⁰ cm², Ω₄=3.871×10⁻²⁰ cm², Ω₆=3.235×10⁻²⁰ cm². The radiative lifetime τ_r is 209 μs and calculated fluorescence branch ratios are: β₁(0.88μm)=45.2, β₂(1.06μm)=46.7, β₃(1.34μm)=8.1. The measured fluorescence lifetime τ_f is 137 μm and the quantum efficiency η is 65.6%. The absorption band at 808 nm wavelength has an FWHM of 20 nm. The absorption and emission cross sections are 3×10⁻²⁰ and 6.13×10⁻²⁰ cm², respectively.     

Influence of annealing on the physical properties of filtered vacuum arc deposited tin oxide thin films

Tin oxide (SnO₂) thin films were deposited on UV fused silica (UVFS) substrates using filtered vacuum arc deposition (FVAD). During deposition, the substrates were at room temperature (RT). As-deposited films were annealed at 400 and 600 °C in Ar for 30 min. The film structure, composition, and surface morphology were determined as function of the annealing temperature using X-ray diffraction (XRD), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The XRD patterns of the SnO₂ thin films deposited on substrates at RT indicated that the films were amorphous, however, after the annealing the film structure became polycrystalline. The grain size of the annealed films, obtained from the XRD analysis, increased with the annealing temperature, and it was in the range 8-34 nm. The AFM analysis of the surface revealed an increase in the film surface average grain size from 15 nm to 46 nm, and the surface roughness from 0.2 to 1.8 nm, as function of the annealing temperature. The average optical transmission of the films in the visible spectrum was >80%, and increased by the annealing ∼10%. The films’ optical constants in the 250-989 nm wavelength range were determined by variable angle spectroscopic ellipsometry (VASE). The refractive indexes of as-deposited and annealed films were in the range 1.83-2.23 and 1.85-2.3, respectively. The extinction coefficients, k(λ), of as-deposited and annealed films were in the range same range ∼0-0.5. The optical energy band gap (E_g), as determined by the dependence of the absorption coefficient on the photon energy at short wavelengths, increased with the annealing temperature from 3.90 to 4.35 eV. The lowest electrical resistivity of the as-deposited tin oxide films was 7.8 × 10⁻³ Ω cm, however, film annealing resulted in highly resistive films.