InP-based InGaAs/InA1GaAs digital alloy quantum well laser structure at 2μm

The structural and optical characteristics of InP-based compressively strained InGaAs quantum wells have been significantly improved by using gas source molecular beam epitaxy grown InAs/Ino.53Ga0.47As digital alloy triangular well layers and tensile Ino.53Ga0.47As/InAiGaAs digital alloy barrier layers. The x-ray diffraction and transmission electron microscope characterisations indicate that the digital alloy structures present favourable lattice quality. Photo- luminescence （PL） and electroluminescence （EL） measurements show that the use of digital alloy barriers offers better optical characteristics than that of conventional random alloy barriers. A significantly improved PL signal of around 2.1μm at 300 K and an EL signal of around 1.95μm at 100 K have been obtained.     

Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model

We investigate the band structure of a compressively strained In(Ga)As/In 0.53 Ga 0.47 As quantum well (QW) on an InP substrate using the eight-band k · p theory.Aiming at the emission wavelength around 2.33 μm,we discuss the influences of temperature,strain and well width on the band structure and on the emission wavelength of the QW.The wavelength increases with the increase of temperature,strain and well width.Furthermore,we design an InAs /In 0.53 Ga 0.47 As QW with a well width of 4.1 nm emitting at 2.33 μm by optimizing the strain and the well width.     

Hydrodynamic simulation of chaotic dynamics in InGaAs oscillator in terahertz region

Hydrodynamic calculations of the chaotic behaviors in n^+nn^+In0.53Ga0.47As devices biased in terahertz(THz)electric field have been carried out.Their different transport characteristics have been carefully investigated by tuning the n-region parameters and the applied ac radiation.The oscillatory mode is found to transit between synchronization and chaos,as verified by the first return map.The transitions result from the mixture of the dc induced oscillation and the one driven by the ac radiation.Our findings will give further and thorough understanding of electron transport in In0.53Ga0.47As terahertz oscillator,which is a promising solid-state THz source.     

Nanoelectronic devices---resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

This paper reports that InAs/In$_{0.53}$Ga$_{0.47}$As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm$^{2}$ has been obtained for diodes with AlAs barriers of ten monolayers, and an In$_{0.53}$Ga$_{0.47}$As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.     

High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars

InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency of 26% and an efficiency higher than 16% at 1 W are achieved at continuous-wave operation for a 2-mm-long and 100-μm-wide stripe laser. The maximum output power of a single emitter reaches to 1.4 W at 7 A.19-emitter bars with maximum efficiency higher than 20% and maximum power of 16 W are fabricated. Lasers with the short-period-pair barriers are proved to have improved temperature properties and wavelength stabilities. The characteristic temperature(T_0) is up to 140?C near room temperature(25–55?C).     

Evolution of surface morphology and photoluminescence characteristics of 1.3-μm In_(0.5)Ga_(0.5)As/GaAs quantum dots grown by molecular beam epitaxy

Evolution of surface morphology and optical characteristics of 1.3-μm In0.5Ga0.5As/GaAs quantum dots （QDs） grown by molecular beam epitaxy （MBE） are investigated by atomic force microscopy （AFM） and photoluminescence （PL）. After deposition of 16 monolayers （ML） of In0.5Ga0.5As, QDs are formed and elongated along the [120] direction when using sub-ML depositions, while large size InGaAs QDs with better uniformity are formed when using ML or super-ML depositions. It is also found that the larger size QDs show enhanced PL efficiency without optical nonlinearity, which is in contrast to the elongated QDs.     

光学特异材料的设计

In this contribution we review our latest achievements of combined experimental and theoretical studies to tailor the properties of optical metamaterials（MMs） at will. We give three examples of metamaterial designs that have been realized by means of electron-beam lithography and whose spectroscopic characteristics have been comprehensively investigated. In every case, our experiments are complemented by rigorous numer ical simulations. Particular emphasis is put on the significance of such tailored effective properties of optical MMs     

Growth and Magnetic Properties of Zincblende CrSb Epilayers on Relaxed and Strained （In, Ga）As Buffers

Zincblende CrSb （zb-CrSb） layers with room-temperature ferromagnetism have been grown on relaxed and strained （In,Ga）As buffer layers epitaxially prepared on （001） GaAs substrates by molecular-beam epitaxy. The structural characterizations of CrSb layers fabricated under the two cases are studied by using synchrotron grazing incidence x-ray diffraction （GID）. The results of GID experiments indicate that no sign of second phase exists in all the zb-CrSb layers. Superconducting quantum interference device measurements demonstrate that the thickness of zb-CrSb layers grown on both relaxed and strained （In,Ga）As buffer layers can be increased to ～12 monolayers （～3.6nm）, compared to ,～3 monolayers （～1 nm） on GaAs directly.     

InP-based optoelectronic devices for optical fiber communications

In this contribution we report the research and development of 1.55 μm InGaAsP/InP gain-coupled DFB laser with an improved injection-carrier induced grating and of high performance 1.3 μm and 1.55 μm InGaAsP/InP FP and DFB lasers for communications. Long wavelength strained MQW laser diodes with a very low threshold current (7–10 mA) have been fabricated. Low pressure MOVPE technology has been employed for the preparation of the layered structure. A novel gain-coupled DFB laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. The laser structures have been prepared by hybrid growth of MOVPE and LPE techniques and reasonably good characteristics have been achieved for resultant lasers. High performance 1.3 μm and 1.55 μm InGaAsP/InP DFB lasers have successfully been developed for CATV and trunk line optical fiber communication. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. Kunio Tada and Yoshiaki Nakano for their cooperation in the fabrication of the novel gain-coupled DFB lasers.     

GaSb-based type-Ⅰ quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers

We report a Ga Sb-based type-I quantum well cascade diode laser emitting at nearly 2-μm wavelength. The recycling of carriers is realized by the gradient Al Ga As Sb barrier and chirped Ga Sb/Al Sb/In As electron injector. The growth of quaternary digital alloy with a gradually changed composition by short-period superlattices is introduced in detail in this paper. And the quantum well cascade laser with 100-μm-wide, 2-mm-long ridge generates an about continuous-wave output of 0.8 W at room temperature. The characteristic temperature T0 is estimated at above 60 K.     

A Small Signal Equivalent Circuit Model for Resonant Tunnelling Diode

We report a resonant tunnelling diode （RTD） small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current-voltage （I-V） characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunnelling process, is also calculated to be 2.09ps.     

25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75℃

We report 25 Gb/s high-speed directly modulated ground-state operation of 1.3 μm In As/Ga As quantum dot(QD) lasers grown by molecular beam epitaxy. The active region of the lasers consists of eight layers of p-doped In As QDs with high uniformity and density. Ridge-waveguide lasers with a 3-μm-wide and 300-μm-long cavity show a low threshold current of 14.4 m A at 20°C and high temperature stability with a high characteristic temperature of 1208 K between 20°C and 70°C. Dynamic response measurements demonstrate that the laser has a 3 d B bandwidth of 7.7 GHz at 20°C and clearly opened eye diagrams even at high temperatures up to 75°C under a 25 Gb/s direct modulation rate.     

Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip

In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors(p HEMTs) and Si complementary metal–oxide semiconductor(CMOS) on the same Silicon substrate.Ga As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique,and the best alignment accuracy of 5 μm is obtained.As a circuit example,a wide band Ga As digital controlled switch is fabricated,which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT,15% smaller than the area of normal Ga As and Si CMOS circuits.     

GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy

A bilayer stacked InAs/GaAs quantum dot structure grown by molecular beam epitaxy on an In0.05Ga0.95As metamorphic buffer is investigated. By introducing a InGaAs：Sb cover layer on the upper InAs quantum dots （QDs） layers, the emission wavelength of the QDs is extended successfully to 1.533 μm at room temperature, and the density of the QDs is in the range of 4× 10^9-8 ×10^9cm^-2. Strong photoluminescence （PL） intensity with a full width at half maximum of 28.6meV of the PL spectrum shows good optical quality of the bilayer QDs. The growth of bilayer QDs on metamorphic buffers offers a useful way to extend the wavelengths of GaAs-based materials for potential applications in optoeleetronic and quantum functional devices.     

Optimum Indium Concentration for Growth of 1.3μmInAs/InxGa1-xAs Quantum Dots in a Well

Five InAs/InxGa1-xAs quantum dots in a well （DWELL） with different indium concentration x are grown by solid source molecular beam epitaxy. The high quantum dot density is observed in the InAs/In0.3Ga0.7As DWELL. The photoluminescence （PL） experiments indicate that the ground state peaks of InAs/In0.15 Ga0.85As and InAs/In0.22 Ga0.78As DWELLs shift to 1.31 and 1.33μm, respectively. The optical properties are investigated by using the PL and piezoreflectance spectroscope methods. An abnormal blue shift has been observed with the further increase of x from 0.22 to 0.30.     

Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors

In this report, the effect of temperature on the In As/Al Sb heterojunction and high-electron-mobility transistors(HEMTs) with a gate length of 2 μm are discussed comprehensively. The results indicate that device performance is greatly improved at cryogenic temperatures. It is also observed that the device performance at 90 K is significantly improved with 27% lower gate leakage current, 12% higher maximum drain current, and 22.5% higher peak transconductance compared to 300 K. The temperature dependence of mobility and the two-dimensional electron gas concentration in the In As/Al Sb heterojunction for the temperature range 90 K-300 K is also investigated. The electron mobility at 90 K(42560 cm2/V·s)is 2.5 times higher than its value at 300 K(16911 cm~2/V·s) because of the weaker lattice vibration and the impurity ionization at cryogenic temperatures, which corresponds to a reduced scattering rate and higher mobility. We also noted that the two-dimensional electron gas concentration decreases slightly from 1.99 × 10~(12) cm~(-2) at 300 K to 1.7 × 10~(12) cm~(-2) at 90 K with a decrease in temperature due to the lower ionization at cryogenic temperature and the nearly constant ?Ec.     

Experimental investigation of loss and gain characteristics of an abnormal In_xGa_(1-x)As/GaAs quantum well structure

In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for the first time, to the best of our knowledge. This special well structure is formed based on the indium-rich effect from the material growth process. The loss and gain are obtained by optical pumping and photoluminescence(PL)spectrum measurement at dual facets of an edge-emitting device. Unlike conventional quasi-rectangle wells, the asymmetrical step well may lead to a hybrid strain configuration containing both compressive and tensile strains and, thus, special loss and gain characteristics. The results will be very helpful in the development of multiple wavelength In Ga As-based semiconductor lasers.     

Review on theory and applications of wavefront recording plane framework in generation and processing of digital holograms

The wavefront recording plane (WRP), subsequently generalized to be known as the virtual diffraction plane (VDP), is a recent concept that has been successfully deployed in fast generation and processing of digital holograms. In brief, the WRP and its extension, the VDP, is a hypothetical plane that is located between the hologram and the object scene, and which is at close proximity to the latter. As such, the fringe patterns on the hypothetical plane are carrying the holistic information of the hologram, as well as the local optical properties of the object scene. This important property enables a hologram to be processed with classical image processing techniques that are normally unsuitable for handling holographic information. In this paper we shall review a number of works, that have been developed based on the framework of the WRP and the VDP.     

Numerical analysis of In0.53Ga0.47As/InP single photon avalanche diodes

A rigorous theoretical model for In 0.53 Ga 0.47 As/InP single photon avalanche diode is utilized to investigate the dependences of single photon quantum efficiency and dark count probability on structure and operation condition.In the model,low field impact ionizations in charge and absorption layers are allowed,while avalanche breakdown can occur only in the multiplication layer.The origin of dark counts is discussed and the results indicate that the dominant mechanism that gives rise to dark counts depends on both device structure and operating condition.When the multiplication layer is thicker than a critical thickness or the temperature is higher than a critical value,generation-recombination in the absorption layer is the dominative mechanism;otherwise band-to-band tunneling in the multiplication layer dominates the dark counts.The thicknesses of charge and multiplication layers greatly affect the dark count and the peak single photon quantum efficiency and increasing the multiplication layer width may reduce the dark count probability and increase the peak single photon quantum efficiency.However,when the multiplication layer width exceeds 1 μm,the peak single photon quantum efficiency increases slowly and it is finally saturated at the quantum efficiency of the single photon avalanche diodes.     

High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy

The GaSb-based laser shows its superiority in the 3–4 μm wavelength range. However, for a quantum well(QW) laser structure of InGaAsSb/AlGaInAsSb multiple-quantum well(MQW) grown on GaSb, uniform content and high compressive strain in InGaAsSb/AlGaInAsSb are not easy to control. In this paper, the influences of the growth temperature and compressive strain on the photoluminescence(PL) property of a 3.0-μm InGaAsSb/AlGaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the In0.485GaAs0.184Sb/Al0.3Ga0.45In0.25As0.22Sb0.78MQW with 1.72% compressive strain grown at 460 C posseses the optimum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.