Electronic properties of chalcopyrite CuAlX2(X=S,Se,Te) compounds

We present results of the band structure and density of states for the chalcopyrite compounds CuAlX₂ (X=S,Se,Te) using the state-of-the-art full potential linear augmented plane wave (FP-LAPW) method. Our calculations show that these compounds are direct band gap semiconductors. The energy gap decreases when S is replaced by Se and Se replaced by Te in agreement with the experimental data. The values of our calculated energy gaps are closer to the experimental data than the previous calculations. The electronic structure of the upper valence band is dominated by the Cu-d and X-p interactions. The existence of Cu-d states in the upper valence band has significant effect on the optical band gap.     

Many-body effects on the width of the band gap in Bi2Te2X (X = Te, Se, S) topological insulators

The spectrum of quasiparticles of Bi₂Te₂X (X = Te, Se, S) three-dimensional topological insulators has been theoretically studied in the GW approximation with the inclusion of the spin-orbit interaction in the construction of the Green’s function and self-energy. It has been shown that many-body corrections to the Kohn-Sham states in Bi₂Te₂X increase the fundamental band gap similar to conventional semiconductors. However, the band gap at the Γ point decreases in this case. Gaps in the quasiparticle spectrum obtained in agreement with the experimental data correspond to the difference between the minimum of the conduction band, which is located on the Γ-Z line, and the maximum of the valence band, which lies beyond the symmetric directions in the mirror plane.     

Ab-initio study of Li based chalcopyrite compounds LiGaX2 (X= S,Se, Te) in tetragonal symmetry: A class of future materials for optoelectronic applications

Structural, electronic, optical, and thermoelectric aspects of chalcopyrite LiGaX₂ (X = S, Se and Te) compounds have been investigated by density functional theory (DFT) based Wien2k simulator. The optimized ground state parameters are calculated by Wu-Cohen generalized gradient approximation (WC-GGA) and electronic structures, which have been further improved by modified Becke-Johnson (mBJ) potential. Moreover, a comparative study is given among the contribution of three anions (S, Se and Te) in the same symmetry of tetragonal phase. The calculated band gaps of the studied compounds are 3.39, 2.83, and 1.96 eV for LiGaS_2, LiGaSe₂ and LiGaTe₂, respectively. The observed band gaps consider the studied compounds are potential materials for optoelectronic devices. In addition, the optical response of the studied materials has been analyzed in terms of dielectric constants, refraction, absorption, reflectivity and energy loss function. We have also reported the thermoelectric properties like Seebeck coefficient, thermal and electrical conductivities, and figure of merit as function of temperatures by using BoltzTrap code. The high thermal efficiency and absorption spectra in the visible region make the studied materials multifunctional for energy applications.     

Theoretical prediction of topological insulators in two-dimensional ternary transition metal chalcogenides (MM'X4, M = Ta,Nb, or V; M'= Ir,Rh, or Co; X = Se or Te)

Ternary transition metal chalcogenides (TTMCs) have attracted interest due to the discovery of their Weyl semimetallic property and the recent synthesis of layered TTMCs which are regarded as potential candidates for two-dimensional (2D) topological insulators. Here, employing first-principles calculations, we predicted the emergence of non-trivial band topologies in the monolayer MM'X₄ family (M= V, Nb, or Ta; M' = Co, Rh, or Ir; and X = Se or Te) within hybrid functional calculations. Five of eighteen 2D materials were found to be topological insulators, while four of them are magnetic thin films. The nontrivial topologies were verified via the calculated Z₂ topological invariant and topologically protected edge states. Further calculations showed a strain-induced phase transition in VCoTe₄ from a magnetic phase to a nonmagnetic topological insulating phase. Our comprehensive study revealed a diverse family of monolayer ternary transition metal chalcogenides adding new members to the current catalog of 2D topological insulators and 2D magnetic materials.     

Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate

Two-dimensional(2D) ferromagnetic(FM) materials have great potential for applications in next-generation spintronic devices. Since most 2D FM materials come from van der Waals crystals, stabilizing them on a certain substrate without killing the ferromagnetism is still a challenge. Through systematic first-principles calculations, we proposed a new family of 2D FM materials which combines TaX(X = S, Se or Te) monolayer and Al_2O_3(0001) substrate. The TaX monolayers provide magnetic states and the Al_2O_3(0001) substrate stabilizes the former. Interestingly, the Al_2O_3(0001)substrate leads to a metal-to-insulator transition in the Ta X monolayers and induces a band gap up to 303 meV. Our study paves the way to explore promising 2D FM materials for practical applications in spintronics devices.     

The correlation between aromaticity and stability in planar N2X2 (X = O,S, Se,and Te) Species

Five isomers of N₂O₂ and a series of planar alternate four-membered ring N₂X₂ (X?=?O, S, Se, and Te) species have been examined with both the B3LYP and the CCSD methods. The 6-311?+?G* basis set is used for O, S, Se and the SDD pseudo potential basis set is used for the heavier atom Te. The aromaticity, the stability, and the relationship between them, are discussed in terms of the nucleus independent chemical shifts (NICS), the transition state (TS) barriers. Little correlation is observed between aromaticity and stability of the present species.     

Molecular Structures of H2X and D2X(X=0, S,Se, Te)

There are two possible configurations for H₂O, linear(D_∞h) or bent(C_2v). For a C_2v′, the three bands ν_1′ ν₂ and ν₃ should appear in both Raman and infrared. For a D_∞h. however, the ν₁, band should appear in only Raman and the ν₂ and ν₃ bands, in only infrared, that is, a principle of mutual exclusion of Raman and infrared should hold. The present author concludes that H₂X and D₂X(X=O, S, Se, Te) have a linear D_∞h. structure, since the obtained spectra show mutual exclusion of Raman and infrared.     

Effect of p-d hybridization and structural distortion on the electronic properties of AgAlM2(M=S,Se,Te) chalcopyrite semiconductors

We report an ab initio calculation and study of the structural and electronic properties of AgAlM₂(M=S,Se,Te) chalcopyrite semiconductors using the density functional theory (DFT)-based self-consistent tight-binding linear muffin tin orbital (TB-LMTO) method. The calculated equilibrium values of the lattice constants, anion displacement parameter (u), tetragonal distortion (η=c/2a) and bond lengths are in good agreement with experimental values. Our study suggests these semiconductors to be direct band gap semiconductors with band gaps 1.98 eV, 1.59 eV and 1.36 eV, respectively. These values are in good agreement with experimental values, within the limitation of the local density approximation (LDA). Our explicit study of the effects of anion displacement and p-d hybridization show that the band gap increases by 9.8%, 8.2% and 5.1%, respectively, for AgAlM₂(M=S,Se,Te) due to former effect and decreases by 51%, 47% and 42%, respectively, due to latter effect.     

Penta-SiC5 monolayer: A novel quasi-planar indirect semiconductor with a tunable wide band gap

In this paper, by using of the first principles calculations in the framework of the density functional theory, we systematically investigated the structure, stability, electronic and optical properties of a novel two-dimensional pentagonal monolayer semiconductors namely penta-SiC₅ monolayer. Comparing elemental silicon, diamond, and previously reported 2D carbon allotropes, our calculation shows that the predicted penta-SiC₅ monolayer has a metastable nature. The calculated results indicate that the predicted monolayer is an indirect semiconductor with a wide band gap of about 2.82 eV by using Heyd–Scuseria–Ernzerhof (HSE06) hybrid functional level of theory which can be effectively tuned by external biaxial strains. The obtained exceptional electronic properties suggest penta-SiC₅ monolayer as promising candidates for application in new electronic devices in nano scale.     

Thermoelectric performance of monolayer Bi2Te2Se of ultra low lattice thermal conductivity

The electronic structure and thermoelectric properties of monolayer Bi₂Te₂Se were studied by density functional theory and semi-classical Boltzmann transport equation. The band gap with TB-mBJ can be improved for monolayer Bi₂Te₂Se. Monolayer Bi₂Te₂Se have ultra-low thermal conductivity comparing with other well-known two-dimensional materials. The monolayer Bi₂Te₂Se can improve electrical conductivities. ZT increases with increasing temperature for monolayer Bi₂Te₂Se. Comparing to GGA, TB-mBJ has larger ZT value in p-type doping. Monolayer Bi₂Te₂Se have larger ZT comparing with other well-known two-dimensional materials. Our calculated results show that our calculation greatly underestimates ZT value, therefore, monolayer Bi₂Te₂Se should have a higher ZT value.     

Penta-P<Subscript>2</Subscript>X (X=C,Si) monolayers as wide-bandgap semiconductors: A first principles prediction

By means of density functional theory computations, we predicted two novel two-dimensional (2D) nanomaterials, namely P₂X (X=C, Si) monolayers with pentagonal configurations. Their structures, stabilities, intrinsic electronic, and optical properties as well as the effect of external strain to the electronic properties have been systematically examined. Our computations showed that these P₂C and P₂Si monolayers have rather high thermodynamic, kinetic, and thermal stabilities, and are indirect semiconductors with wide bandgaps (2.76 eV and 2.69 eV, respectively) which can be tuned by an external strain. These monolayers exhibit high absorptions in the UV region, but behave as almost transparent layers for visible light in the electromagnetic spectrum. Their high stabilities and exceptional electronic and optical properties suggest them as promising candidates for future applications in UV-light shielding and antireflection layers in solar cells.     

197Au and125Te Mössbauer spectroscopic study on the low temperature phases of Ag3AuX2 (X=S,Se, and Te)

¹⁹⁷Au and¹²⁵Te Mössbauer spectroscopy has been applied for the low-temperature β-phases of Ag₃AuX₂ (X=S, Se, and Te). The values of I. S. and Q. S. for¹⁹⁷Au suggest that the gold atoms, linearly coordinated by two chalcogen atoms in these phases, exist as monovalent cations. The¹²⁵Te Mössbauer spectra suggest that the tellurium atoms are substantially ionic for both Ag₂Te and Ag₃AuTe₂. The nature of X-Au-X bonds is discussed on the basis of the Mössbauer data and the bond distances.     

Ab initio study of II-(VI)2 dichalcogenides

The structural stabilities of the (Zn,Cd)(S,Se,Te)(2) dichalcogenides have been determined ab initio. These compounds are shown to be stable in the pyrite phase, in agreement with available experiments. Structural parameters for the ZnTe(2) pyrite semiconductor compound proposed here are presented. The opto-electronic properties of these dichalcogenide compounds have been calculated using quasiparticle GW theory. Bandgaps, band structures and effective masses are proposed as well as absorption coefficients and refraction indices. The compounds are all indirect semiconductors with very flat conduction band dispersion and high absorption coefficients. The work functions and surface properties are predicted. The Te and Se based compounds could be of interest as absorber materials in photovoltaic applications.     

Epitaxial fabrication of AgTe monolayer on Ag(111) and the sequential growth of Te film

Transition-metal chalcogenides (TMCs) materials have attracted increasing interest both for fundamental research and industrial applications. Among all these materials, two-dimensional (2D) compounds with honeycomb-like structure possess exotic electronic structures. Here, we report a systematic study of TMC monolayer AgTe fabricated by direct depositing Te on the surface of Ag(111) and annealing. Few intrinsic defects are observed and studied by scanning tunneling microscopy, indicating that there are two kinds of AgTe domains and they can form gliding twin-boundary. Then, the monolayer AgTe can serve as the template for the following growth of Te film. Meanwhile, some Te atoms are observed in the form of chains on the top of the bottom Te film. Our findings in this work might provide insightful guide for the epitaxial growth of 2D materials for study of novel physical properties and for future quantum devices.     

Electronic structure of titanium dichalcogenides TiX<Subscript>2</Subscript> (X = S,Se, Te)

The electronic structure and the chemical bond in titanium dichalcogenides TiX₂ (X = S, Se, Te), which are promising electrode materials for lithium batteries, are studied experimentally and theoretically. It is found that the X-ray photoelectron spectra of the valence bands and the core levels of titanium and its X-ray L _{2, 3} absorption spectra demonstrate a change in the ionic and covalent components of the chemical bond in these compounds. The densities of states in these compounds are calculated by the full-potential augmented-plane-wave method, and multiplet calculations of the X-ray L _{2, 3} absorption spectra of titanium are performed. It is shown that, in the row TiS₂-TiSe₂-TiTe₂, the covalence increases, the ionicity of the chemical bond decreases, and the effect of the crystal field of a ligand is weakened.     

Electronic structure and structural phase stability of CuAlX2 (X=S, Se, Te) under pressure

The electronic and structural properties of chalcopyrite compounds CuAlX₂ (X=S, Se, Te) have been studied using the first principle self-consistent Tight Binding Linear Muffin-Tin Orbital (TBLMTO) method within the local density approximation. The present study deals with the ground state properties, structural phase transition, equations of state and pressure dependence of band gap of CuAlX₂ (S, Se, Te) compounds.Electronic structure and hence total energies of these compounds have been computed as a function of reduced volume. The calculated lattice parameters are in good agreement with the available experimental results. At high pressures, structural phase transition from bct structure (chalcopyrite) to cubic structure (rock salt) is observed. The pressure induced structural phase transitions for CuAlS₂, CuAlSe₂, and CuAlTe₂ are observed at 18.01, 14.4 and 8.29 GPa, respectively. Band structures at normal as well as for high-pressure phases have been calculated. The energy band gaps for the above compounds have been calculated as a function of pressure, which indicates the metallic character of these compounds at high-pressure fcc phase. There is a large downshift in band gaps due to hybridatization of the noble-metal d levels with p levels of the other atoms.     

From layers to nanotubes: Transition metal disulfides TMS<Subscript>2</Subscript>

MoS₂ and WS₂ layered transition-metal dichalcogenides are indirect band gap semiconductors in their bulk forms. Thinned to a monolayer, they undergo a transition and become direct band gap materials. Layered structures of that kind can be folded to form nanotubes. We present here the electronic structure comparison between bulk, monolayered and tubular forms of transition metal disulfides using first-principle calculations. Our results show that armchair nanotubes remain indirect gap semiconductors, similar to the bulk system, while the zigzag nanotubes, like monolayers, are direct gap materials, what suggests interesting potential applications in optoelectronics.     

Electronic and optical properties of Sr3X2 (X=N,P, As,Sb and Bi) compounds: first principles study

ABSTRACT

Direct bandgap semiconductors are very essential to fulfil the demand for the advancement in optoelectronic devices. Therefore it is important to predict new potential candidates having such unique features. In current work, Sr₃X₂ (X=N, P, As, Sb and Bi) compounds have been reported for the first time by well trusted FP-APW+lo method. For the better prediction of the energy band gap, mBJ is used alongwith routine generalised gradient approximation (GGA). The results show small and direct energy band gaps at Γ-Γ symmetry points with magnitude in the range from 0.62?eV (Sr₃P₂) to zero energy band gap (Sr₃Bi₂). In partial density of state Sr-d state and X-p state are contributed in the band structure. The compounds show mostly covalent bonding nature. The frequecy dependent optical properties in the linear optical range are also investigated.     

Prediction of Interesting Ferromagnetism in Janus Semiconducting Cr2AsP Monolayer

2D half-metallic materials that have sparked intense interest in advanced spintronic applications are essential to the developing next-generation nanospintronic devices. This study has adopted a first-principles calculation method to predict the magnetic properties of intrinsic, Se-doped, and biaxial strain tuning Cr₂AsP monolayer. The Janus Cr₂AsP monolayer is proven to be an intrinsic ferromagnetic (FM) semiconductor with an exchange splitting bandgap of 0.15 eV at the PBE+U level. Concentration-dependent Se doping, such as Cr₂As${}_{1-x}$Se_xP (x = 0.25, 0.50, 0.75), can regulate Cr₂AsP from FM semiconductor to FM half-metallicity. Specifically, the spin-up channel crosses the Fermi level, while the spin-down channel has a bandgap. More interestingly, the wide half-metallic bandgaps and spin bandgaps make them have important implications for the preparation of spintronic devices. At last, it also explore the effect of biaxial strain from -14% to 10% on the magnetism of the Cr₂AsP monolayer. There appears a transition from FM to antiferromagnetic (AFM) at a compressive strain of -10.7%, originating from the competition between the indirect FM superexchange interaction and the direct AFM interaction between the nearest neighboring Cr atoms. Additionally, when the compressive strain is -2% or the tensile strain is 6%, the semiconducting Cr₂AsP becomes a half-metallic material. These charming properties render the Janus Cr₂AsP monolayer with great potential for applications in spintronic devices.     

Synthesis and characterization of 2D transition metal dichalcogenides: Recent progress from a vacuum surface science perspective

Layered transition metal dichalcogenides (TMDs) are a diverse group of materials whose properties vary from semiconducting to metallic with a variety of many body phenomena, ranging from charge density wave (CDW), superconductivity, to Mott-insulators. Recent interest in topologically protected states revealed also that some TMDs host bulk Dirac- or Wyle-semimetallic states and their corresponding surface states. In this review, we focus on the synthesis of TMDs by vacuum processes, such as molecular beam epitaxy (MBE). After an introduction of these preparation methods and categorize the basic electronic properties of TMDs, we address the characterization of vacuum synthesized materials in their ultrathin limit-mainly as a single monolayer material. Scanning tunneling microscopy and angle resolved photoemission spectroscopy has revealed detailed information on how monolayers differ in their properties from multi-layer and bulk materials. The status of monolayer properties is given for the TMDs, where data are available. Distinct modifications of monolayer properties compared to their bulk counterparts are highlighted. This includes the well-known transition from indirect to direct band gap in semiconducting group VI-B TMDs as the material-thickness is reduced to a single molecular layer. In addition, we discuss the new or modified CDW states in monolayer VSe₂ and TiTe₂, a Mott-insulating state in monolayer 1T-TaSe₂, and the monolayer specific 2D topological insulator 1T′-WTe₂, which gives rise to a quantum spin Hall insulator. New structural phases, that do not exist in the bulk, may be synthesized in the monolayer by MBE. These phases have special properties, including the Mott insulator 1T-NbSe₂, the 2D topological insulators of 1T′-MoTe₂, and the CDW material 1T-VTe₂. After discussing the pure TMDs, we report the properties of nanostructured or modified TMDs. Edges and mirror twin grain boundaries (MTBs) in 2D materials are 1D structures. In group VI-B semiconductors, these 1D structures may be metallic and their properties obey Tomonaga Luttinger quantum liquid behavior. Formation of Mo-rich MTBs in Mo-dichalcogenides and self-intercalation in between TMD-layers are discussed as potential compositional variants that may occur during MBE synthesis of TMDs or may be induced intentionally during post-growth modifications. In addition to compositional modifications, phase switching and control, in particular between the 1H and 1T (or 1T′) phases, is a recurring theme in TMDs. Methods of phase control by tuning growth conditions or by post-growth modifications, e.g. by electron doping, are discussed. The properties of heterostructures of TMD monolayers are also introduced, with a focus on lateral electronic modifications in the moiré-structures of group VI-B TMDs. The lateral potential induced in the moiré structures forms the basis of the currently debated moiré-excitons. Finally, we review a few cases of molecular adsorption on nanostructured monolayer TMDs. This review is intended to present a comprehensive overview of vacuum studies of fundamental materials' properties of TMDs and should complement the investigations on TMDs prepared by exfoliation or chemical vapor deposition and their applications.