大气压双频氦气放电等离子体特性的数值研究

用一维流体模型研究了大气压双频氦气放电等离子体的特性。数值模拟的结果表明,在单、双频放电中,随着应用电压的增加,电子密度和放电电流都增加。相对于单频放电,双频放电中低频源的耦合效应使得放电中的电流以及电子密度降低。随着低频源电压峰值的增加,电子密度降低,离子通量,电子损失能量以及电子吸收能量均降低;但电子温度和电势随着低频源电压峰值的增加而增加。在相同低频源电压下,随着高频源电压的增加离子流非线性增加。     

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Based on one dimensional fluid model, the characteristics of helium plasma discharge driven by dual frequency at atmospheric pressure were studied. The results show that the electron density and discharge current increase with power voltage both in single frequency discharge and dual frequency discharge. In comparison with single frequency discharge, the discharge current and electron density in dual frequency discharge are lowered due to the coupling of low frequency source. As the voltage of low frequency source increases, the electron density, ion flux, electron energy dissipation, as well as electron heating decrease, whereas electron temperature and potential increase. As the voltage of high frequency source increases, the ion flux nonlinearly increases at the same voltage of low frequency source.     

Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

The current-voltage (I-V) characteristics of 4H-SiC metal-semiconductor-metal (MSM) ultraviolet pho-todetector with different finger widths and spacings, different carrier concentrations and thicknesses of n-type epitaxial layer are simulated. The simulation results indicate that the dark current and the pho-tocurrent both increase when the finger width increases. But the effect of finger width on the dark current is more significant. On the other hand, the effect of finger spacing on the photocurrent is more significant. When the finger spacing increases, the photocurrent decreases and the dark current is almost changeless. In addition, it is found that the smaller the carrier concentration of n-type epitaxial layer is, the smaller the dark current and the larger the photocurrent wiU be. It is also found that I-V characteristics of MSM detector also depend on the epitaxial layer thickness. The dark current of detector is smaller and the photocurrent is larger when the epitaxial layer thickness is about 3 μm.     

Effect of temperature on the current–voltage characteristics of GaAs/AlGaAs quantum cascade photodetectors

Transport of electrons within a quantum cascade photodetector structure takes place with the help of the scattering of electrons by phonons. By calculating scattering rates of the electrons mediated by longitudinal optical phonons (the dominant scattering mechanism), current–voltage characteristic of a quantum cascade photodetector is calculated. The results indicate that with the increase of bias voltage dark current increases rapidly, then the increase becomes slow at higher voltages, whilst photocurrent remains approximately constant with only slight variations in its magnitude. With the increase of temperature from 80 K to 160 K dark current increases by about two orders of magnitude while photocurrent varies slightly, so that at the illuminating power of 1 mW/m² photocurrent density increases in mean from 1.10×10⁻⁹ A/cm² at 80 K to 1.14×10⁻⁹ A/cm² at 160 K and then decreases to 1.03×10⁻⁹ A/cm² at 240 K. Thus the responsivity of the detector varies only slightly with temperature. However owing to the decrease in the resistivity of the photodetector with the increase of temperature, Johnson noise limited detectivity decreases considerably.     

Simulation of the Metal-Semiconductor-Metal photodetector based on InGaAs for the photodetection at the wavelength 1.55 μm

In this paper we present the simulation of Metal-Semiconductor-Metal photodetector (MSM-PD) of interdigitated planar structure based on InAlAs/InGaAs adapted for photodetection at the wavelength 1.55 μm. We use the theoretical models to plot the variations of the dark current, the photocurrent, the capacity, and the cut-off frequency of the photodetector as a function of bias voltage and the interelectrode distance. The obtained results show a very low dark current, mainly due to the introduction of a thin layer to increase the Schottky barrier based on In_0.52Al_0.48As in the epitaxial structure of component. The obtained photocurrent and cut-off frequencies are very appreciable, these latter are mainly limited by the transit time of the photo-generated carriers given the low component capacity obtained by simulation.     

Evolution of Photocurrent during Coadsorption of Cs and O on GaAs （100）

The photocurrent and spectral response characteristics of gallium arsenide （GaAs） are obtained by a multiinformation measurement system, and the evolution of the photocurrent versus the Cs：O flux ratio is investigated. The experimental results show that the photocurrent increases approximately exponentially after the first exposure to Cs until a maximum sensitivity is reached, the detailed evolution process and the ultimate photocurrent are different for different samples. These differences are analysed, and according to the process of coadsorption of Cs and oxygen on GaAs, an equation is presented to explain the increase of photocurrent.     

Effect of Cathode and Anode Voltage on an Ion Sheath Thickness in a Magnetically Confined Diffusion Plasma

This article reports about the ion sheath thickness variation occurring in front of a negatively biased plate immersed in the target plasma region of a double plasma device. The target plasma is produced due to the local ionization of neutral gas by the high energetic electrons coming from the source region (main discharge region). It is observed that for an increase in cathode voltage (filament bias voltage) in the source region, the ion flux into the plate increases. As a result, the sheath at the plate contracts. Again, for an increase in source anode voltage (magnetic cage bias), the ion flux to the plate decreases. As a result, the sheath expands at the plate. The ion sheath formed at the separation grid of the device is found to expand for an increase in cathode voltage and it contracts for an increase in the anode voltage of the main discharge region. One important observation is that the applied anode bias can control the Bohm speed of the ions towards the separation grid. Furthermore, it is observed that the ion current collected by the separation grid is independent of changes in plasma density in the diffusion region but is highly dependent on the source plasma parameters. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Strom-Spannungsabhängigkeit bei der Photoleitung in Isolatoren mit Störstellen und nachlieferndem Kontakt

The total current (photocurrent plus dark current) through an insulator with one ohmic contact is obtained. The insulator contains a single, discrete trap level and in addition fixed holes as recombination centers. From the total current, the photocurrent-voltage characteristic is derived. For shallow traps only, the photocurrent after an ohmic range, continuously turns into saturation. For deep traps only, however, below the threshold voltage for the onset of the space-charge-limited dark current, the photocurrent-voltage characteristic is considerably influenced by the rate of excitation by light. The superlinear rise of the photocurrent with voltage (at low rates of excitation) changes into a linear and furthermore into a sublinear rise with increasing rate of excitation. Near the threshold voltage the photocurrent passes through a maximum at very low rates of excitation because the deep traps are filled with electrons from the ohmic contact. The corresponding maximum gain may be by orders of magnitude greater than the saturation gain.     

Effect of signal-modulated optical radiation on the characteristics of a Modfet

The effect of signal-modulated optical radiation on the characteristics of a GaAlAs/GaAs MODFET has been studied analytically. It is found that the offset voltage increases with modulation frequency and the effect of frequency is negligible above 5 MHz. The drain-source current decreases with increase in signal frequency at a constant radiation flux density, doping concentration and drain-source voltage. Studies on sheet concentration and transconductance also show that the signal frequency has a significant effect upto a certain modulation frequency (5 MHz) above which the effect of frequency is insignificant.     

Metal-semiconductor-metal ultraviolet photodetector based on GaN

A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 Na under 5 V bias, and is 15.3 Na under 10 V bias. A maximum responsivity of 0.166 A/W has been achieved under the illumination with λ= 366 nm light and 15 V bias. It exhibits a typical sharp band-edge cutoff at the wavelength of 366 nm, and a high responsivity at the wavelength from 320 nm to 366 nm. Its responsivity under the illumination with λ= 360 nm light increases when the bias voltage increases.     

Photocurrents in p-n Si diodes under high intensity (pulsed-laser) illumination: Quantum yields and kinetic evaluation

The photoelectric response of p-n Si photodiodes under pulsed laser illumination (half width 10 ns) at 532 nm was studied as a function of dose which was varied over 6 orders of magnitude. The photocurrent transients are dominated by a plateau-like feature due to the build up of space charge at the intensities used. Increasing bias voltage increases the height of the plateau and decreases its length. In the low-dose range the length of the transient increases linearly with dose and the collected charge (integrated current) reaches a constant value. At high doses (above 10^–5 J/pulse · cm² or 2.7×10¹³ quanta/pulse · cm²) considerable charge loss (decrease in quantum yields) is accompanied by a less than proportional increase of the transient lifetime. From model calculations the dose and voltage dependence of the quantum yield of charge collection is shown to be the result of competition between current flow and first and higher order recombination. The model calculations are consistent with experimental results. Rate constants have been obtained by fitting.     

ZnO/P-Si异质结的光电特性研究

利用脉冲激光沉积方法在P-Si(100)衬底上生长ZnO薄膜,制备ZnO/P-Si异质结,研究衬底温度对异质结光电特性的影响.结果表明,在400℃,500℃,550℃和600℃下生长ZnO制备的异质结都有一定的整流特性,反向暗电流随着衬底温度的升高略有增加,在550℃下制备的样品具有最明显的光电效应.ZnO/P-Si异质结对可见光和紫外光呈现出不同的响应性.在可见光照射下,光电流随反向偏压急剧增大,偏压增大到某一值时,光电流增速变小,而在紫外光下,光电流有逐渐增大的趋势.根据ZnO的透射谱认为,可见光和紫外光是异质结不同的耗尽区诱导电子-空穴对产生光电流的.     

Optoelectronic transport mechanism from subband infrared absorption and tunneling regeneration

The main problems of conventional multi-quantum well infrared photodetectors (QWIPs) were discussed. In order to overcome the limitations of the conventional QWIPs, such as small photocurrent, high dark current and low response speed, novel QWIPs in which photocurrent increases with the number of well were proposed. The novel structure with several wells were calculated and analyzed in detail, and successfully fabricated. The dark current lower than conventional QWIPs by about one order of magnitude was obtained, well in agreement with theoretical value. I–V characteristics of the novel QWIPs with six wells has been presented, and six related negative differential resistance regions were observed at positive bias. The absorption photocurrents of the novel QWIPs at 77 K were found to increase with well numbers, confirming the mechanism of the new structure. Furthermore, the transportation of the optoelectronic and some other problems of the QWIPs were discussed.     

磁场对聚合物光电池中电流的影响

制备了结构为 ITO/PEDOT:PSS/P3HT:PCBM/Ca/Al的聚合物光电池器件,并在不同偏压下,分别测量了器件的光电流和暗电流随外加磁场的变化. 发现随外加磁场增加,光电流增强,暗电流减弱. 从聚合物光电池中光电流和暗电流的产生机制出发,对该现象进行了解释,认为外加磁场可以有效改变单重态极化子对和三重态极化子对之间的相对比例,进而使自由载流子浓度增加. 光生自由载流子浓度增加是光生电流增强的原因,而自由载流子与三重态激子的相互作用导致了暗电流减弱. 开路电压附近,光电流随磁场增加而增强可以近似 关键词： 聚合物光电池 磁场效应 光生电流 极化子对     

LT-GaAs飞秒光电导之电场响应特性

利用飞秒光电导自相关技术研究了LT GaAs飞秒光电导开关时间随外加偏置电场的变化规律 .实验结果显示当外加偏置电场从0.5×10⁴ V/cm 上升到9.5×10⁴ V/cm 时，光电导 开关时间开始在200fs附近缓慢变化再迅速增加到750fs.这是由于随着外加电场增加，Fren kel-Poole效应导致的EL2缺陷中心库仑吸引势垒降低和电场增强的碰撞电离效应显著增强 ，导致载流子俘获截面减小，载流子寿命增加之故. 关键词： 光电导自相关技术 载流子俘获时间 Frenkel-Poole效应 电子碰撞电离效应     

Si/Ge/Si异质横向SPiN二极管固态等离子体解析模型

采用横向表面PiN(SPiN)二极管构造的硅基可重构天线具有众多优于传统天线的独特优势, 是实现天线小型化和提升雷达与微波通信系统性能的有效技术途径. 本文提出一种Si/Ge/Si异质横向SPiN二极管, 并基于双极扩散模型与Fletcher型边界条件, 在大注入条件下建立了二极管结电压、电流密度与本征区固态等离子体浓度分布解析模型, 并数值模拟分析了本征区长度、P⁺与N⁺区掺杂浓度、外加电压对所建模型的影响. 结果表明, 固态等离子体浓度随本征区长度的增加下降, 随外加电压的增加而指数上升, 随P⁺与N⁺区掺杂浓度的提高而上升, 电流密度随外加电压的增加而指数上升. 同等条件下, 异质SPiN二极管的固态等离子体浓度相比同质二极管提高近7倍以上. 本文所建模型为硅基可重构天线的设计与应用提供有效的参考.     

Photocurrent and spin manipulation in quantum dots

In this paper we use a density matrix formalism to model the spin photocurrent obtained from a single self-assembled quantum dot photodiode under the influence of an applied strong polarized electromagnetic pulse and a gate voltage. We show that the degree of polarization of the output photocurrent generated by a circularly polarized pulse in a strongly anisotropic quantum dot can be switched as we increase the pulse intensity. A similar effect is observed in a quantum dot with weak anisotropic electron–hole exchange interaction by using an elliptically polarized pulse. In the latter, a shorter pulse is needed, which creates an effective exchange channel through the biexciton. This phenomenon can be used as a dynamical switch to invert the spin-polarization of the extracted current.     

Bidirectional photocurrent of holes in layers of Ge/Si quantum dots

Spectra of the photocurrent of holes in δ-doped Si layers with Ge quantum dots in weak external electric fields have been studied. It has been established that the photocurrent of the holes in the photovoltaic mode changes its sign with the increase in the impurity concentration in the δ layers. It has been found that there is a voltage range in the vicinity of the zero bias in which the direction of the photocurrent is determined by the wavelength of the exciting radiation.     

GaN基高压直流发光二极管制备及其性能分析

GaN基高压直流发光二极管工艺制备, 采用蓝宝石图形衬底(PSS) 外延片制备正梯形芯粒结构的GaN基高压直流LED.相对其他结构器件, 该结构器件发光效率最高, 封装白光后, 在色温4500 K, 驱动电流20 mA时, 光效116.06 lm/W, 对应电压50 V. 测试其I-V曲线表明, 开启电压为36 V, 对应驱动电流为1.5 mA; 在电流15 mA至50 mA时, 光功率随驱动电流增加近似于线性增加, 在此区域光效随电流增加而降低的幅度比较缓慢, 表明GaN基高压直流LED适宜于采用大电流密度驱动, 而不会出现驱动电流密度增加导致量子效率明显下降(efficiency droop), 为从芯片层面研究解决量子效率下降难题提供了一种新思路.     

Superconducting mechanism of YBaCuO superconductors

Electromagnetic properties of YBaCuO superconductor were measured on applying an external magnetic field to study non-volatile magnetic effect. The voltage increases with increase in applied magnetic flux, but it becomes constant at about 10⁻² T. The appearance of the voltage is ascribed to the trapping of magnetic flux. By changing the density of external magnetic flux, changes in inductance of a coil in which a superconducting bar inserted were also measured. The results showed that the filament model was valid to explain the mechanism of the occurrence of a voltage in superconducting sample. It was concluded that the electromagnetic properties arose from the interaction between the trapped magnetic flux and weak link of the filament formed in the superconducting bulk.