高能等离子体辅助CVD法新型纳米碳膜的制备及分析

利用自制高能等离子体辅助化学气相沉积设备在1Cr18Ni9Ti衬底上，在离子能量2keV、工作压力2Pa、工作气氛为CH₄/H₂=10%的工艺条件下得到了一种硬度高、导电性能良好、可能具有碳链结构的新型碳膜.工艺研究结果表明，衬底材料对制备该新型纳米碳膜具有关键作用，离子能量、工作压力及气氛等工艺因素也具有重要作用.原子力显微镜分析结果表明，该薄膜晶粒尺寸小于100nm，薄膜光滑、致密、均匀.拉曼光谱分析显示，该薄膜的拉曼光谱特征为中心峰在1580cm ^{关键词： 高能等离子体 CVD法 纳米碳膜 衬底材料}     

Optical and structural characterization of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films deposited via coaxial arc plasma

Ultrananocrystalline diamond/hydrogenated amorphous carbon composite films were deposited in the ambient of hydrogen by coaxial arc plasma deposition. The film compositions and chemical bonding structures were investigated by X-ray diffraction, X-ray photoemission and hydrogen forward scattering spectroscopies. The sp³/(sp²+sp³) ratio and hydrogen content in the film were estimated to be 64% and 35?at.%, respectively. The optical parameters and the optical dispersion profile were determined by using a variable angle spectroscopic ellipsometer at 55°, 65° and 75° angle of incidence in the photon energy range of 0.9–5?eV. Combinations of multiple Gaussian, and Tauc-Lorentz or Cody-Lorentz dispersion functions are used to reproduce the experimental data. Results of ellipsometry showed a refractive index of approximately 2.05 (at 2eV) and optical band gap of 1.63?eV. The imaginary part of dielectric function exhibited a peak at 3.8?eV, which has assigned to π-π* electron transitions. Furthermore, Electron spin resonance measurements implied the existence of dangling bonds, which might have a partial contribution to the optical absorption properties of the deposited films. A correlation between optical parameters and structural profile of the deposited films is discussed.     

保护气对切割弧特性影响的模拟研究

通过比较两种不同结构切割炬所产生的等离子体流场,发现保护气对等离子体的温度和速度分布影响很小.垂直保护气在切割炬喷口形成阻碍作用,造成切割炬内的压强有所升高,但是增加不大.两种结构保护气对切割弧的影响只是在炬喷口外的激波附近.加入保护气后激波的强度会减弱.相对于没有保护气的情况,保护气增加冷却作用,弧电压会略有升高.当改变保护气的成分时,发现弧柱区的氧气含量不受影响,所以保护气成分的改变不会影响到弧电压.计算发现轴线处氧气和周围气体的混合很少,在喷口下游10mm处,氧气的摩尔分数仍在90%以上. 关键词： 等离子体切割弧 保护气 数值模拟     

Spectroscopic study of an atmospheric pressure plasma generated for the deposition of titanium dioxide thin films

TiO₂ thin films are applied in various domains, e.g. air or water purification, self-cleaning surfaces etc. The deposition of titanium dioxide at industrial scale remains challenging. Atmospheric pressure plasma chemical vapor deposition methods are currently developed to provide an easy and viable method for deposition at industrial scale. Even though those methods lead to promising applicative coatings their formation mechanisms remain poorly investigated. In order to investigate the effect of the plasma parameters, i.e. plasma power and introduction of oxygen, on the plasma chemistry, optical emission spectroscopy (OES) is employed to monitor the various species present in the discharge. X-ray Photoelectron Spectroscopy (XPS) analyses of the deposited thin films are carried out and show that by either decreasing the plasma power or introducing oxygen the carbon impurities in the layer can be reduced. By comparing OES and XPS data, the ratio of carbon containing species (CH and C₂) to oxygen, i.e. I_CH/I_O or I_C2/I_O, in the discharge is shown to be related to the carbon/oxygen composition ratio in the layer.     

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介绍了高压直流电源输出发生短路故障时的暂态情况,并详细分析和计算了速调管负载发生极间打火时,在三电极气体开关保护动作过程中电源向速调管注入的能量。计算和仿真结果与实验结果一致,当高压电源输出发生短路故障时,开关能在μs级关断,并且能将短路电流能控制在200A。验证了三电极气体开关保护的快速性与可靠性,具有工程应用价值。     

高功率微波在等离子体填充波导中的谐波产生

采用等离子体流体理论，研究了高功率微波在等离子体填充波导中的谐波产生，导出了非线性波动方程. 对二次谐波产生进行了数值计算与分析. 理论分析和数值计算表明，高功率微波将在等离子体填充波导中激发起谐波，TE_0n模式与TM_0n模式的基波都将激发起TM类型的谐波. 关键词： 高功率微波 谐波产生 等离子体填充波导     

半导体泵浦射流型亚稳态氩激光国际首次出光北大核心CSCD

半导体泵浦亚稳态惰性原子激光是高能光泵浦气体激光领域具有潜力的新方案。已有报道均在约束的放电空间内产生亚稳态原子,功率放大受到多因素制约。为突破现有方案的局限,采用大气压等离子体射流方式在羽流区域产生高浓度亚稳态氩原子(1014 cm^(−3)量级),将放电和激光区域空间分离,利用811 nm窄线宽半导体激光器作为泵浦源,基于泵浦、激光和气流相互垂直的结构实现912 nm激光输出,有效拓展了该型激光体系的功率定标放大能力。     

常压双频驱动Ar/CCl4等离子体射流制备碳薄膜的研究

在大气压下双频Ar/CCl4 等离子体射流的驱动下,固定低频功率,通过改变射频功率在硅基底上制备了非晶态碳薄膜,并且通过程序进行相应的数值模拟计算。结果给出了不同功率下电子与离子的密度、温度、电场、电势、角度分布等参数对碳材料样品形貌的影响;样品变化趋势的预测及其原因的分析,以及与实验结果的对比。结果表明,对于双频大气压等离子体,射频可以独立控制等离子体的能量和反应强度,可以相对地控制产物。这为制备薄膜材料的形貌提供重要的实验基础。     

高气压直流辉光CH4/H2等离子体的气相过程诊断

对高气压(约100 Torr) 直流辉光碳氢等离子体的气相过程进行了光谱和质谱原位诊断. 在高气压下, 等离子体不同区域光发射特性存在明显差异. 正柱区存在着以C₂和CH为主的多个带状谱和分立谱线, 阳极区粒子发射谱线明显减少, 而在阴极区则出现大量复杂的光谱成分, 表明高气压情形下等离子体与阴极间强烈的相互作用将导致复杂的原子分子过程. 从低气压到高气压演变过程中, 电子激发温度降低而气体分子转动温度升高. 在高气压下, 高甲烷浓度导致C₂, C₂H₂及C₂H₄增多而C₂H₆减少. 表明在高气压条件下, 气体温度对气相过程的影响作用显著增强. 关键词： 高气压直流等离子体 光发射谱 质谱     

A new shunt DC active filter of power supply in a steady high magnetic field facility

A DC active power filter is an indispensable part in a high power and high stability power supply system, especially in the power supply system of the Steady High Magnetic Field Facility, which requires that the current ripple should be limited to 50 parts per million. In view of the disadvantages of the series DC active power filter and shunt Pulse Width Modulation DC active filter, this paper puts forward a novel DC active filter by combining the advantages of the transistor regulator and the shunt type. The structure and principle of the new shunt linear active filter are introduced. Meanwhile, the design of several key components that construct the new shunt linear active filter is also analyzed. The simulation model and an experimental prototype of the shunt linear active filter are developed, and the results verify that the parameter design is reasonable and the shunt active filter has a good filter effect.     

A new shunt DC active filter of power supply in a steady high magnetic field facility

A DC active power filter is an indispensable part in a high power and high stability power supply system, especially in the power supply system of the Steady High Magnetic Field Facility, which requires that the current ripple should be limited to 50 parts per million. In view of the disadvantages of the series DC active power filter and shunt Pulse Width Modulation DC active filter, this paper puts forward a novel DC active filter by combining the advantages of the transistor regulator and the shunt type. The structure and principle of the new shunt linear active filter are introduced. Meanwhile, the design of several key components that construct the new shunt linear active filter is also analyzed. The simulation model and an experimental prototype of the shunt linear active filter are developed, and the results verify that the parameter design is reasonable and the shunt active filter has a good filter effect.     

Numerical study of the effect of water content on OH production in a pulsed-dc atmospheric pressure helium–air plasma jet

A numerical study of the effect of water content on OH production in a pulsed-dc atmospheric pressure helium–air plasma jet is presented. The generation and loss mechanisms of the OH radicals in a positive half-cycle of the applied voltage are studied and discussed. It is found that the peak OH density increases with water content in air(varying from0% to 1%) and reaches 6.3×1018m-3when the water content is 1%. Besides, as the water content increases from 0.01%to 1%, the space-averaged reaction rate of three-body recombination increases dramatically and is comparable to those of main OH generation reactions.     

An optical emission spectroscopy study of the plasma generated in the DC HF CVD nucleation of diamond

Optical emission spectroscopy (OES) was used to study the plasma generated by the activation of the gas phase CH₄ + H₂ both by hot filaments and by a plasma discharge (DC HF CVD) during the nucleation of CVD diamond. The effects of nucleation parameters, such as methane concentration and extraction potential, on the plasma chemistry near the surface were investigated. The density of the diamond nucleation and the quality of the diamond films were studied by scanning electron microscopy (SEM) and Raman scattering, respectively. The OES results showed that the methane concentration influenced strongly the intensity ratio of H_β-H_α implying an increase of electron mean energy, as well as CH, CH⁺, C₂. A correlation between the relative increase of CH⁺ and the diamond nucleation density was found, conversely the increase of C₂ contributed to the introduction of defects in the diamond nuclei.     

射流式水冷镜换热性能及在高能化学激光器中的应用

加工了射流式水冷铜镜模型,采用红外热像仪测量了冷却过程中镜面温度分布云图,证明了射流式水冷镜冷却的均匀性。采用热电偶较精确地测量了铜镜冷却过程中镜面温度的变化,实验结果与数值模拟吻合较好,验证了射流式水冷镜数值模型的可靠性。结合高能化学激光器中水冷镜实际情况,对直线沟槽型水冷镜和射流式水冷镜的形变特性进行了分析。计算结果表明,高能化学激光器水冷镜必须承压加工才能使用,射流式水冷镜可以很好地应用于高能化学激光器。此外,进一步分析了冷却孔直径和数量这两个参数对大口径射流式水冷镜形变的影响,结果表明:在孔数一定的情况下,采用更大口径的冷却孔,镜面冷却速度快、镜面最大温度低,可以获得更小的镜面形变;采用更多的冷却孔可以获得更好的冷却效果。     

射流式水冷镜换热性能及在高能化学激光器中的应用

加工了射流式水冷铜镜模型,采用红外热像仪测量了冷却过程中镜面温度分布云图,证明了射流式水冷镜冷却的均匀性。采用热电偶较精确地测量了铜镜冷却过程中镜面温度的变化,实验结果与数值模拟吻合较好,验证了射流式水冷镜数值模型的可靠性。结合高能化学激光器中水冷镜实际情况,对直线沟槽型水冷镜和射流式水冷镜的形变特性进行了分析。计算结果表明,高能化学激光器水冷镜必须承压加工才能使用,射流式水冷镜可以很好地应用于高能化学激光器。此外,进一步分析了冷却孔直径和数量这两个参数对大口径射流式水冷镜形变的影响,结果表明：在孔数一定的情况下,采用更大口径的冷却孔,镜面冷却速度快、镜面最大温度低,可以获得更小的镜面形变;采用更多的冷却孔可以获得更好的冷却效果。     

Switching speed effect of phase shift keying in SLED for generating high power microwaves

SLAC energy doubler(SLED) type radio-frequency pulse compressors are widely used in large-scale particle accelerators for converting long-duration moderate-power input pulses into short-duration high-power output pulses. Phase shift keying(PSK) is one of the key components in SLED pulse compression systems. Performance of the PSK will influence the output characteristics of the SLED, such as the rise-time of the output pulse, maximal peak power gain, and energy efficiency. In this paper, a high power microwave source based on power combining and pulse compression of conventional klystrons is introduced. The effects of nonideal PSK with slow switching speed and PSK without power output during the switching process are investigated, and the experimental results with nonideal PSK agree well with the analytical results.     

气体滞留时间对高速沉积的微晶硅薄膜性能的影响分析

实现高速沉积对于薄膜微晶硅太阳电池产业化降低成本是一个重要手段.采用超高频等离子体增强化学气相沉积(VHF-PECVD)技术，实现了微晶硅硅薄膜的高速沉积，并通过改变气体总流量改变气体滞留时间，考察了气体滞留时间在化学气相沉积(CVD)过程中对薄膜的生长速率以及光电特性和结构特性的影响.采用沉积速率达到12?/s的高速微晶硅工艺制备微晶硅电池，电池效率达到了5.3％. 关键词： 气体滞留时间 高速沉积 微晶硅 超高频等离子体增强化学气相沉积     

微波击穿大气电子温度与电子密度依存关系

给出了描述高功率微波脉冲大气非线性传输及微波大气等离子体特征演化的方程组,并在以微波群速度运动的局域坐标系下完成程序编制。据此模拟分析了高功率微波大气长程非线性传输及自产生大气等离子体的基本物理过程,给出了在击穿建立过程中,电子数密度增长与电子温度升高之间的关系。模拟结果表明:由于大气层中本底自由电子数密度较低,高功率微波脉冲到达时会迅速地将大气中现有的自由电子加热至平衡温度,与之相比导致电子数密度雪崩式增长的击穿过程要缓慢得多,而且随着击穿过程的开始电子温度会从平衡温度快速下降。     

晶粒尺寸对气相沉积薄膜磁取向生长的影响研究

为了研究强磁场下薄膜取向生长规律,采用真空蒸发气相沉积法分别制备了不同磁场方向生长的Zn和Bi薄膜.XRD结果发现磁化率差异较小的Zn薄膜在4T时产生了明显的取向生长,而磁化率差异较大的Bi薄膜在5T磁场强度还没有发生取向生长.SEM结果显示Zn薄膜和Bi薄膜晶粒尺寸上有明显的差别,利用Zn薄膜在4T磁场下的取向建立晶粒尺寸和取向生长的对应关系,提出薄膜发生取向时晶粒的磁化能须大于热能kT的420倍.薄膜是否发生取向生长取决于三个因素:薄膜单个晶粒的大小V,材料不同晶向的磁化率差异Δ关键词： 强磁场 磁取向 薄膜生长 材料电磁加工     

Investigations on the effect of process parameters on the growth of vertically oriented graphene sheet in plasma-enhanced chemical vapour deposition system

A multistage numerical model comprising the plasma kinetics and surface deposition sub-models is developed to study the influence of process parameters, namely, total gas pressure and input plasma power on the plasma chemistry and growth characteristics of vertically oriented graphene sheets (VOGS) grown in the plasma-enhanced chemical vapour deposition system containing the Ar + H₂ + C₂H₂ reactive gas mixture. The spectral and spatial distributions of temperature and number densities, respectively, of plasma species, that is, charged and neutral species in the plasma reactor, are examined using inductively coupled plasma module of COMSOL Multiphysics 5.2 modelling suite. The numerical data from the computational plasma model are fed as the input parameters for the surface deposition model, and from the simulation results, it is found that there is a significant drop in the densities of various plasma species as one goes from the bulk plasma region to the substrate surface. The significant loss of the energetic electrons is observed in the plasma region at high pressure (for constant input power) and low input power (for constant gas pressure). At low pressure, the carbon species generate at higher rates on the catalyst nanoislands surface, thus enhancing the growth and surface density of VOGS. However, it is found that VOGS growth rate increases when input plasma power is raised from 100 to 300 W and decreases with further increase in the plasma power. A good comparison of the model outcomes with the available experimental results confirms the adequacy of the present model.