Depth profiling of copper thin films by resonant laser ablation

In Resonant Laser Ablation (RLA), material is related and selectively ionized by a low-energy pulse from a tunable laser. The selectivity and efficiency allow detection and quantitation at very low concentrations. We demonstrate that RLA has potential use in profiling thin layer and multilayer structures. Quantitative results are reported on the analysis of 20 and 100 Å copper thin films on Si(110) surfaces. Removal rates range from 10^–3 to 10^–2 Å/shot. Prospects for interrogation of dopants and impurities are also evaluated.     

Selective ablation of thin films with short and ultrashort laser pulses

Micromachining of CuInSe₂ (CIS)-based photovoltaic devices with short and ultrashort laser pulses has been investigated. Therefore, ablation thresholds and ablation rates of ZnO, Mo and CuInSe₂ thin films have been measured for irradiation with nanosecond laser pulses of ultraviolet and visible light and subpicosecond laser pulses of a Ti:sapphire laser. The experimental results were compared to the theoretical evaluation of the samples heat regime. In addition, the cells photo-electrical properties were measured before and after laser machining. Scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analyses were employed to characterise the laser-induced ablation channels. Using nanosecond laser pulses, two phenomena were found to limit the laser-machining process. Residues of Mo that were projected onto the walls of the ablation channel and the metallization of the CuInSe₂ semiconductor close to the channel lead to a shunt. The latter causes the decrease of the photovoltaic efficiency. As a consequence of these limiting effects, only subpicosecond laser pulses allowed the selective or complete ablation of the thin layers without a relevant change of the photo-electrical properties.     

Femtosecond pulsed laser ablation of diamond-like carbon films on silicon

Femtosecond pulsed laser ablation (τ = 120 fs, λ = 800 nm, repetition rate = 1 kHz) of thin diamond-like carbon (DLC) films on silicon was conducted in air using a direct focusing technique for estimating ablation threshold and investigating the influence of ablation parameter on the morphological features of ablated regions. The single-pulse ablation threshold estimated by two different methods were ?_th(1) = 2.43 and 2.51 J/cm². The morphological changes were evaluated by means of scanning electron microscopy. A comparison with picosecond pulsed laser ablation shows lower threshold and reduced collateral thermal damage.     

Concentrations and velocity distributions of positive ions in laser ablation of copper

It is shown that the generation of secondary electrons by excited neutrals hitting a surface makes the so-called probe method unsuited for measuring the positive ion fraction in laser ablation plumes. Experiments have been performed in a modified set-up, in which the disturbance by secondary electrons is avoided. For a typical case of Cu irradiated in ultra-high vacuum by nanosecond excimer laser pulses of 3 J cm^–2 the ionized fraction is about 10^–8 at a distance of 60 cm. This number is in fair agreement with Saha-Langmuir predictions based on the assumption of local thermal equilibrium at an estimated temperature of about 3000K. Angular-resolved time-of-flight measurements show that there are three different ion velocity distributions. A slow contribution (kinetic energy 2eV) with an angular distribution peaked along the normal, and two fast, isotropic contributions (kinetic energy 20–50 eV). The fast contributions are attributed to ions involved in a Coulomb explosion.     

UV-laser ablation of ductile and brittle metal films

Single-shot laser damage of Ni and Cr films on fused silica substrates has been studied as a function of film thickness, utilizing 248 nm/14 ns pulses and detection by probe beam deflection. Threshold fluences for visible damage and vaporization are compared to predictions of the heat diffusion model. The model fits thresholds for visible damage well and identifies their origin, which is melting for Ni films and brittle-to-ductile phase transition for Cr films. When predicting thresholds for vaporization, the diffusion model is of limited success in case of Ni films but fails completely for Cr films, indicating that transient thermal properties of the material should be taken into account. Microscopic inspection shows that Cr films rupture at low fluences before entering the common sequence of melting and vaporizing with increasing fluence. 17 December 1996/Accepted: 17 December 1996     

Fabrication of Mg-doped ZnO thin films by laser ablation of Zn:Mg target

Mg-doped ZnO thin films were fabricated by laser ablation of Zn:Mg targets consisting of Mg metallic strips and Zn disk in oxygen atmosphere with a goal to facilitate convenient control of Mg contents in the films. The characteristics of the deposited films were examined by analyzing their photoluminescence (PL), X-ray diffraction and X-ray photoelectron spectroscopy (XPS) spectra. Mg contents as analyzed by XPS indicate that the target composition is fairly transferred to the deposited films. The wurtzite structure of ZnO was conserved even for the highly doped ZnO films and there was no Mg- or MgO-related XRD peaks. With increase in the Mg content, the bandgap and PL peak energy shifted to blue and the Stokes shift became larger.     

XPS studies of short pulse laser interaction with copper

The effect of laser ablation on copper foil irradiated by a short 30 ns laser pulse was investigated by X-ray photoelectron spectroscopy. The laser fluence was varied from 8 to 16.5 J/cm² and the velocity of the laser beam from 10 to 100 mm/s. This range of laser fluence is characterized by a different intensity of laser ablation. The experiments were done in two kinds of ambient atmosphere: air and argon jet gas.The chemical state and composition of the irradiated copper surface were determined using the modified Auger parameter (α′) and O/Cu intensity ratio. The ablation atmosphere was found to influence the size and chemical state of the copper particles deposited from the vapor plume. During irradiation in air atmosphere the copper nanoparticles react with oxygen and water vapor from the air and are deposited in the form of a CuO and Cu(OH)₂ thin film. In argon atmosphere the processed copper surface is oxidized after exposure to air.     

Excimer laser ablation of polyimide in a manufacturing facility

High power excimer laser ablation projection tools have been used successfully in IBM manufacturing for about four years. One hundred fifty W XeCL, 300 mJ per pulse and 500 mJ per pulse lasers, running at 500 Hz and 300 Hz, respectively, have been run successfully for over 2 billion pulses. Excimer laser projection ablation tools are very similar to photo-expose tools, and their similarities and differences are explained. The laser and its gas handling, beam delivery, beam homogenization, optics, debris, part handling, and maintenance are discussed.Presented at LASERION '91, June 12–14, 1991, München (Germany)     

Sub-picosecond UV-laser ablation of Ni films

Laser ablation of thin Ni films on fused silica by 0.5 ps KrF-excimer-laser pulses at 248 nm is reported. The onset of material removal from different film thicknesses (0.1, 0.3, 0.6 and 1.0 m) was measured in a laser ionization time-of-flight mass spectrometer by the amount of Ni atoms vs laser fluence. Significant amounts of metal atoms are already evaporated at laser fluences around 20 mJ/cm², a threshold up to 100 times smaller compared to the one for 14 ns pulses. In contrast to ns laser pulses, the ablation threshold for 0.5 ps pulses is independent of the film thickness. These results reflect the importance of thermal diffusion in laser ablation of strongly absorbing and thermally good conducting materials and prove that for ablation with short pulses, energy loss to the bulk is minimized.     

The influence of thermal diffusion on laser ablation of metal films

Single-shot ablation thresholds of nickel and gold films in the thickness range from 50 nm to 7 m have been measured for 14 ns laser pulses at 248 nm, using photoacoustic shock wave detection in air. The metal films were deposited on fused silica substrates. The ablation threshold was found to increase linearly with film thickness up to the thermal diffusion length of the film. Beyond this point it remains independent of film thickness. The proportionality between threshold fluence and thickness allows the prediction of ablation thresholds of metal films from the knowledge of their optical properties, evaporation enthalpies and thermal diffusivities. Physically it proves that ablation is driven by the energy density determined by the thermal diffusion length. A simple thermodynamic model describes the data well. Thermal diffusivities, an essential input for this model, were measured using the technique of transient thermal gratings. In addition, the substrate dependence of the ablation threshold was investigated for 150 nm Ni films.     

Nonlinear laser ablation from solid rare-gas films

Optical breakdown on Ar films is studied in an intensity range from 10⁶ to 2 × 10⁹ W/cm² for wavelengths of 228, 281 and 282.8 nm. The amount of ablated H₂O, N₂, O₂ and Ar increases quadratically with laser intensity and depends strongly on the exposure time to residual gas and on substrate temperature around 24 K. The results can be explained by a model which assumes that the dominant process causing ablation is the heating of a condensed residual gas layer by two-photon absorption.     

A study of blast waveforms detected simultaneously by a microphone and a laser probe during laser ablation

We examine blast waves generated in air during irradiation of absorbing samples with Nd: YAG laser pulses of fluences exceeding the ablation threshold. Blast waves were detected simultaneously by a wideband microphone and a laser beam deflection probe. By a comparative analysis of both signals in the time and frequency domain we investigate characteristic features of their nonlinear waveform evolution. To explain the observed phenomena we employ the weak shock solution of the point explosion model.     

A theoretical model for laser removal of particles from solid surfaces

Received: 13 November 1996/Accepted: 30 January 1997     

Ultrafast dynamic ellipsometry measurements of early time laser ablation of titanium thin films

The dynamics of laser ablated titanium thin films are investigated using a recently developed technique that measures time-resolved and one-dimensional spatially-resolved ablation dynamics in a single shot. Ultrafast dynamic ellipsometry, a technique based on space-shifted spectral interferometry, uses the time-dependent frequency of a chirped laser pulse to provide time encoding, allowing the picosecond probing of material dynamics in a single shot. With this technique, the sample is probed at two different incident angles with both s- and p-polarized light, which measures the motion of the material and any change in its complex refractive index. Ultrafast dynamic ellipsometry is applied to study the mechanism of initiation by laser-based optical detonators that employ the ablation of titanium thin films. The resulting data indicate that the titanium is ablated as a fragmented flyer and not as an expanding plasma.     

Yttrium nitride thin films grown by reactive laser ablation

Yttrium nitride thin films were grown on silicon substrates by laser ablating an yttrium target in molecular nitrogen environments. The composition and chemical state were determined with Auger electron, X-Ray photoelectron, and energy loss spectroscopies. The reaction between yttrium and nitrogen is very effective using this method. Ellipsometry measurements indicate that the films are metallic. We attribute this behavior to a small oxygen contamination. Each oxygen atom introduces two additional electrons to the unit cell, resulting in a complex semiconductor-ionic-metallic system. These results are corroborated by first principles total energy calculations of clean and oxygen doped YN.     

Ultrashort-pulse laser ablation of indium phosphide in air

Ablation of indium phosphide wafers in air was performed with low repetition rate ultrashort laser pulses (130 fs, 10 Hz) of 800 nm wavelength. The relationships between the dimensions of the craters and the ablation parameters were analyzed. The ablation threshold fluence depends on the number of pulses applied to the same spot. The single-pulse ablation threshold value was estimated to be φ_th(1)=0.16 J/cm². The dependence of the threshold fluence on the number of laser pulses indicates an incubation effect. Morphological and chemical changes of the ablated regions were characterized by means of scanning electron microscopy and Auger electron spectroscopy. Received: 30 May 2000 / Accepted: 31 May 2000 / Published online: 23 August 2000     

Femtosecond laser ablation of silicon–modification thresholds and morphology

We investigated the initial modification and ablation of crystalline silicon with single and multiple Ti:sapphire laser pulses of 5 to 400 fs duration. In accordance with earlier established models, we found the phenomena amorphization, melting, re-crystallization, nucleated vaporization, and ablation to occur with increasing laser fluence down to the shortest pulse durations. We noticed new morphological features (bubbles) as well as familiar ones (ripples, columns). A nearly constant ablation threshold fluence on the order of 0.2 J/cm² for all pulse durations and multiple-pulse irradiation was observed. For a duration of ≈100 fs, significant incubation can be observed, whereas for 5 fs pulses, the ablation threshold does not depend on the pulse number within the experimental error. For micromachining of silicon, a pulse duration of less than 500 fs is not advantageous. Received: 4 December 2000 / Revised version: 29 March 2001 / Published online: 20 June 2001     

Rapid growth of ultra thin SiO2 films by a large-area electron beam

Rapid growth of ultra thin oxide films (40–180Å) of silicon using a low-energy large-area electron beam has been performed with a pressure ratio of 31 (O₂/He) and a total pressure of 0.5–0.7 Torr. A higher oxidation rate of about 625Ų/s is found for shorter irradiation time of the e-beam in the e-beam dose range 0.75–3 Coulomb/cm² and at lower substrate temperature 540–740°C. AES and XPS demonstrated a rapid electron-stimulated oxidation process of the Si surface. For the grown ultra thin oxide films, C-V characteristics, dielectric strength, uniformity of the film over the entire Si wafer and its thickness as a function of the processing time of the e-beam are also presented.     

Femtosecond laser ablation of aluminium

We investigate femtosecond laser ablation of aluminium using a hybrid simulation scheme. Two equations are solved simultaneously: one for the electronic system, which accounts for laser energy absorption and heat conduction, the other for the dynamics of the lattice where the ablation process takes place. For the electron-temperature a generalized heat-conduction equation is solved by applying a finite difference scheme. For the lattice properties, e.g. pressure, density or temperature, we use common molecular dynamics. Energy transfer between the subsystems is allowed by introducing an electron-phonon coupling term. This combined treatment of the electronic and atomic systems is an extension of the well known two-temperature model [Anisimov, Kapeliovich, Perel’man, Electron emission from metal surfaces exposed to ultra short laser pulses, JETP Lett. 39 (2)].     

Picosecond laser ablation of nano-sized WTi thin film

Interaction of an Nd:YAG laser, operating at 532 nm wavelength and pulse duration of 40 ps, with tungsten-titanium (WTi) thin film (thickness, 190 nm) deposited on single silicon (100) substrate was studied. Laser fluences of 10.5 and 13.4 J/cm² were found to be sufficient for modification of the WTi/silicon target system. The energy absorbed from the Nd:YAG laser beam is partially converted to thermal energy, which generates a series of effects, such as melting, vaporization of the molten material, shock waves, etc. The following WTi/silicon surface morphological changes were observed: (i) ablation of the thin film during the first laser pulse. The boundary of damage area was relatively sharp after action of one pulse whereas it was quite diffuse after irradiation with more than 10 pulses; (ii) appearance of some nano-structures (e.g., nano-ripples) in the irradiated region; (iii) appearance of the micro-cracking. The process of the laser interaction with WTi/silicon target was accompanied by formation of plasma.