Threshold and saturation properties of a solid-state XeF (C-A) excimer laser

A dielectric laser cavity of 1 cm length has been optimized for high gain (7 cm^–1) operation which is achieved in XeF doped Ar crystals. Mode structures on the C-A spectral distribution around 540 nm and far field transverse mode patterns are reported. Photchemical gain burning is observed in the spectral mode structures. The dependence of the laser threshold on pump energy, pumped length and on cavity losses is studied. XeF densities of 7×10¹⁷ cm^–3 and distributed losses of 1.2 cm^–1 are derived. The measured quantum efficiency of 14% and the saturation behaviour are consistently described. Losses by transient aborption and two photon absorption are discussed.     

Laser investigations at 269 nm for XeF(D-X) in Ne crystals

From line narrowing in amplified spontaneous emission at the D-X transition (269nm) of XeF in solid Ne a gain coefficient of 3.4 cm^–1 has been derived and ground-state losses of 2.8 cm^–1 have been determined by variation of the absorption length. A dielectric laser cavity has been optimized with the reflectivities R₁=100% and R₂=70% for 1 cm long crystals; laser action has been achieved.     

Gain and saturation measurements in a discharge excited F2 laser using an oscillator amplifier configuration

The small-signal gain coefficient and the saturation intensity of a F₂ pulsed discharge molecular laser at 157 nm have been measured using two discharge devices in an oscillator-amplifier configuration. The small signal gain coefficient was measured to be 5.2±0.4% cm^–1 at 3 atm total pressure and 1.5 cm electrode spacing and 4.1±0.4% cm^–1 at 2 atm total pressure and 2 cm electrode spacing while the values of the saturation intensity were 5 MW/cm² and 4.6 MW/cm², respectively.     

Excimer-laser-induced electric conductivity in thin-film C60

The electrical conductivity of thin-film C₆₀ has been changed by more than seven orders of magnitude with KrF (248nm) excimer-laser irradiation. Specific conductivities of 1 ^–1 · cm^–1 have been obtained. The onset of conductivity is consistent with a laser-induced metal-insulator phase transition. The threshold for KrF-laser ablation of C₆₀ has been determined to be 20±2 mJ/cm². This laser-induced process generates an all-carbon semiconductor-metallic junction which may have important technological applications.     

Observation of gain at 54.2 Å on balmer-alpha transition of hydrogenic sodium

Planer stripe and foil targets coated with NaF were irradiated with high intensity 351 nm laser radiation of 130 ps duration. Time-integrated as well as time-resolved measurement of gain on NaXIH at 54.2Å were made. A time-integrated gain of 1.2 _–1.1 ^+0.8 cm^–1 and a time-resolved peak gain of 3.2±1.0 cm^–1 were obtained. A detailed account of the experimental procedures for determination of gain is given.     

XeCl-laser-generated ablation products from a nitrogen-rich polymer studied by laser-ionization mass spectrometry

Laser-ionization time-of-flight mass spectrometry has been used to probe laser-ablation products from a nitrogen-rich polymer at a wavelength of 308 nm. The ablation products at a laser fluence of 150 mJ/cm² showed, similar to 532 nm ablation studied previously [18], two strong peaks due to neutral species that were assigned to C⁺ and CN⁺, as well as several weak peaks that were assigned to CH⁺, HCN⁺, HCNH⁺, H_nN–CN⁺ (n=1–3), and H₂N–C=N–CN⁺ or H₂N–C=N–CN⁺. The ablation products at 870 mJ/cm² revealed, in addition to a broad signal due to ionic products generated directly by the ablation laser, several peaks due to neutral products that were assigned to C⁺, C ₂ ⁺ , C ₃ ⁺ , CN⁺, HCN⁺, HCNH⁺, and NCCN⁺. The most probable flight velocities for major neutral products are 5.7×10⁴ cm/s at 150 mJ/cm² and 2.3–2.7×10⁴ cm/s at 870 mJ/cm². The results at a laser fluence of 150 mJ/cm² support the finding that the translational energy of the tragments has importance for the collision-induced product generation in the laser plume, as suggested earlier [18]. Furthermore, the product generation at 870 mJ/cm² is interpreted by the ejection of small neutral and ionic fragments, and subsequent reactions among the fragments.     

A polarized CARS investigation of the fine structure population inversion of Cl atoms from laser photolysis of ICl and the quenching of Cl(2 P 1/2) by O2

The time resolved polarized CARS technique has been used to detect Cl atoms produced by photolysis of ICl in the presence and absence of O₂. A population inversion was observed between the ground state electronic levels Cl(² P _1/2) and Cl(² P _3/2). The rate constant for Cl(² P _1/2) decay (quenching + reaction) in ICl was determined to be (3.2±0.2)×10^–13 cm³/molecule×s; the rate constant for Cl(² P _3/2) reaction with ICl was determined to be (7.8±0.5)×10^–12 cm³/molecule×s; and the rate constant for Cl(² P _1/2) quenching by O₂ was determined to be (1.9±0.2)×10^–13 cm³/molecule×s.     

Evolution of the homogeneous IR spectrum of a highly vibrationally excited molecule as a result of a change in its vibrational energy

Using a photodissociation technique, we have measured the IR spectrum of thev ₂₁ mode of the (CF₃)₃ CI molecule with a vibrational energy ofE ₂=42500±3500 cm^–1 which is more than two times the dissociation energy. The experimental spectrum of a Lorenzian shape with a halfwidth of ₂=10.8±1.5 cm^-1 has been analyzed simultaneously with the results of the preceding work (₁=8.6±0.6 cm^-1) that were obtained at a lower vibrational energy (E ₁=36500±2500 cm^–1).     

Effects of laser irradiation energy density on the properties of pulsed laser deposited ITO thin films

The properties of indium tin oxide (ITO) thin films, deposited at room temperature by simultaneous pulsed laser deposition (PLD), and laser irradiation of the substrate are reported. The films were fabricated from different Sn-doped In₂O₃ pellets at an oxygen pressure of 10 mTorr. During growth, a laser beam with an energy density of 0, 40 or 70 mJ/cm² was directed at the middle part of the substrate, covering an area of ∼1 cm². The non-irradiated (0 mJ/cm²) films were amorphous; films irradiated with 40 mJ/cm² exhibited microcrystalline phases; and polycrystalline ITO films with a strong 〈111〉> preferred orientation was obtained for a laser irradiation density of 70 mJ/cm². The resistivity, carrier density, and Hall mobility of the ITO films were strongly dependent on the Sn doping concentration and the laser irradiation energy density. The smallest resistivity of ∼1×10^-4 Ω cm was achieved for a 5 wt % Sn doped ITO films grown with a substrate irradiation energy density of 70 mJ/cm². The carrier mobility diminished with increasing Sn doping concentration. Theoretical models show that the decrease in mobility with increasing Sn concentration is due to the scattering of electrons in the films by ionized centers. PACS 81.15.Fg; 73.61.-r; 73.50.-h     

Cross section of supercooled238UF6 in multiphoton absorption induced by 16 micrometer Raman-laser radiation

Measurements of multiphoton absorption of 16 µm Raman-laser radiation in supercooled²³⁸UF₆ at 90 K were performed by using a pulsed Laval nozzle with an optical path length of 50 cm. The laser fluence was varied between 50 and 500 mJ/cm² for four frequencies in the range from 625 to 629 cm^–1. The energy absorbed by²³⁸UF₆ molecules was investigated as a function of laser frequency or fluence, and highly accurate results were obtained with the use of the nozzle whose optical path length is much greater than that of nozzles used before. The results indicated that the absorption cross section at the peak absorption frequency (627.8cm^–1) was proportional to the –1/3 power of the fluence.     

Laser isotope separation of titanium by two-step photoionization

Titanium isotopes were selectively excited and photoionized using a two-step photoionization method, and the isotope separation was demonstrated, in which a separation factor of around 15 for⁵⁰Ti was obtained. Spectroscopic parameters such as isotope shifts, photo-ionization cross section and excited state lifetimes were also measured. Isotope shifts up to 0.92 GHz were obtained for the transitions between 0 and 19938 cm^–1 or between 170 and 20006 cm^–1 among five isotopes. The cross section is 7.4×10^–17 cm² for the photo-ionization. The excited state lifetimes are 330±20 ns for 19938 cm^–1, 260±15 ns for 20006 cm^–1 and 250±15 ns for 20126 cm^–1.     

Positron mobility in anthracene

We have measured the positron mobility in a sample of scintillation grade anthracene at two temperatures. We obtain at 300 K: =(26.0±0.9±2.6) cm²V^–1s^–1 and at 77 K: =(33.4±1.1±3.3) cm²V^–1s^–1, where the first error estimate is statistical and the second is systematic. We have also made preliminary measurements on a highly purified sample that yields =(130±3±20) cm² V^–1 s^–1 at 300 K. The data are consistent with the hypothesis that the positron is scattered from both impurities and acoustic phonons in the first sample, and predominantly from photons in the second. It appears that positrons in pure anthracene crystals are delocalized and have a mean free path of about 85 Å at room temperature.     

Excimer-laser-assisted RF glow-discharge deposition of amorphous and microcrystalline silicon thin films

We combine the deposition of Hydrogenated amorphous Silicon (a-Si:H) by rf glow discharge with XeCl-excimer laser irradiation of the growing surface in order to obtain different kinds of silicon films in the same deposition system. In-situ UV-visible ellipsometry allows us to measure the optical properties of the films as the laser fluence is increased from 0 up to 180 mJ/cm² in separate depositions. For fixed glow-discharge conditions and a substrate temperature of 250° C we observe dramatic changes in the film structure as the laser fluence is increased. With respect to a reference a-Si:H film (no laser irradiation) we observe at low laser fluences (15–60 mJ/cm²) that the film remains amorphous but demonstrates enchanced surface roughness and bulk porosity. At intermediate fluences (80–165 m/Jcm²), we obtain an amorphous film with an enhanced density with respect to the reference film. Finally, at high fluences (165–180 mJ/cm²), we obtain microcrystalline films. The in-situ ellipsometry measurements are complemented by ex-situ measurements of the dark conductivity, X-ray diffraction, and Elastic Recoil Detection Analysis (ERDA). Simulation of the temperature profiles for different film thicknesses and for three laser fluences indicates that crystallization occurs if the surface temperature reaches the melting point of a-Si:H ( 1420 K). The effects of laser treatment on the film properties are discussed by taking into account the photonic and thermal effects of laser irradiation.Presented at LASERION 93, Munich, June 21–23, 1993     

Studies of vibrational relaxation in CDF3 following intense laser excitation

The V-T/R relaxation time of CDF₃ was measured studying the laser-induced infrared fluorescence emitted by vibrationally excited CDF₃. Following excitation by the 10R(12) line of a TEA CO₂ laser infrared fluorescence has been detected without spectral resolution in the 1100–700 cm^–1 range. A decay rate of 28.8 ms^–1 Torr^–1 was obtained for pure CDF₃ when it is excited with a fluence of 390 mJ/cm². Measurements have also been made in the presence of different bath gases (He, Ne, Ar, Xe, and CHF₃).     

Design and performance of a transverse discharge, UV-preionized mercury-bromide laser

The design, construction, and operating characteristics of a pulsed, transverse discharge-pumped HgBr laser, capable of operation at pulse repetition frequencies as high as 100 Hz, are presented. Having an active length of 53 cm, this laser system is preionized by two sets of spark arrays and average single pulse energies of 55 mJ are produced from Ne/N₂/HgBr₂ (natural abundance) vapor mixtures, with an output coupling of 50% and 17 J of energy stored in the pulse forming network. Based on measurements of the laser pulse energy for several values of cavity output coupling, the small signal gain coefficient and saturation intensity for the laser were determined to be 4.7% cm^–1 and 260 kW cm^–2, respectively. The single pass gain-to-loss ratio is 12.4.     

Laser annealing of GaAs dual implanted with Si and P ions

Laser annealing of SI(100) GaAs:Cr implanted either with Si⁺ ions (150 keV, 6×10¹³-1×10¹⁵cm^–2) or dual implanted with Si⁺ ions (150 keV, 6×10¹⁴–1×10¹⁵cm^–2) and P⁺ ions (160 keV, 1×10¹⁴–1×10¹⁵cm^–2) has been examined using backscatteringchannelling technique and via electrical measurement of Hall effect. It has been found that at laser energy densities 0·8 J cm^–2 a full recovery of the sample surface occurs. In dual implanted samples (1×10¹⁵ Si⁺ cm^–2+1×10¹⁵P⁺cm^–2) up to 46% of Si atoms become electrically active after the laser annealing. Resultant Hall mobility of carriers is, however,lower than that obtained after common thermal annealing.The authors are pleased to take the opportunity of thanking Professor M. Kubát for his encouragement and continuous support. Accelerator staff is gratefully acknowledged for its assistance in the course of experiments.     

Plume temperature in the laser ablation of polyimide films measured by infrared emission spectroscopy

The infrared emission spectrum of the plume produced by KrF excimer laser ablation of polyimide films in air and in He was measured in the 680 to 1580 cm^–1 wavenumber range. Using 400 mJ/cm² laser pulses of 248 nm and 35 ns duration yielded a strong emission band characteristic of thev ₂ transitions of hot HCN molecules. Band counters calculations were carried out of thev ₂ emission expected from HCN in thermal equilibrium at various temperatures. They indicate that except for a slight deviation of the measured data from thermal equilibrium, the best fit of the observed results is obtained at a plume temperature of 2250±150K.     

Direct laser interference patterning of poly(3,4-ethylene dioxythiophene)-poly(styrene sulfonate) (PEDOT-PSS) thin films

We have developed a patterning procedure based on selective ablation using interference patterns with ns-laser pulses to fabricate periodic arrays on large areas of poly(3,4-ethylene dioxythiophene)-poly(4-styrene sulfonic acid) (PEDOT-PSS) thin films over a metallic gold–palladium layer. Single pulse laser-ablation experiments were performed to study the ablation characteristics of the thin films as a function of the film thickness. The ablation threshold fluence of the PEDOT-PSS films was found to be dependent on thickness with values ranging from 43 mJ/cm² to 252 mJ/cm². Additionally, fluences at which the PEDOT-PSS films could be ablated without inducing damage in the underlying metallic films were observed (128 mJ/cm² and 402 mJ/cm² for film thicknesses of 70 nm and 825 nm, respectively). Linear periodic arrays with line spacings of 7.82 μm and 13.50 μm were also fabricated. The surface topography of these arrays was analyzed using scanning electron and atomic force microscopy. For thicker polymeric layers, several peeled sub-layers of the conjugated polymer with average thicknesses of about 165–185 nm were observed in the ablation experiments. The size and scale of structures produced by this technique could be suitable for several biomedical applications and devices in which controlling cell adhesion, promoting cell alignment, or improving biocompatibility are important.     

Dynamics of excimer laser ablation of thin tungsten films monitored by ultrafast photography

The time course of laser light induced transport of tungsten films from a glass support is followed by ultrafast photography using delayed dye laser pulses. The photographs provide unambiguous evidence that the material transport in the 40–200 mJ/cm² intensity domain takes place via removal of solid pieces from the film material. These results are consistent with heat flow calculations which predict the overall melting of the metal layer above 380 mJ/cm². The series of photographs presented give detailed insight into the melting process and have revealed an unexpected in-flight phase separation of solid fracture pieces and molten droplets throughout the 200–900 mJ/cm² domain. The faster propagating molten droplets form a condensed halo in front of the solid pieces, thereby providing an efficient shield between the processing laser light and the solid phase.     

Energy levels of vanadium ions in CdTe

In CdTe doped with vanadium the photoluminescence due to the ³ T ₂(F) ³ A ₂(F) transition of V³⁺(d ²) is detected. Its decay time is determined as (630±20) s, a result comparable to the analogous emissions in various host lattices. Further emissions around 5000 cm^–1 and 9000 cm^–1 are caused by charge-transfer transitions or bound-exciton decay. Excitation and sensitization spectra yield information on the positions of the energy levels within the gap, which are discussed using two different models. At T=4.2 K, the distance of the V²⁺/V³⁺ donor level is 7300 cm^–1 and 5700 cm^–1 referred to the valence and the conduction band edges, respectively. The absence of V²⁺(d ³) centres is tentatively ascribed to the existence of deeply bound excitons.