Gravitational collapse of colloidal gels

We present a unified framework for understanding the compaction of colloidal gels under their own weight. The dynamics of the collapse are determined by the value of the gravitational stress sigma(g), as compared to the yield stress sigma(Y) of the network. For sigma(g)sigma(Y), the network eventually yields, leading to rapid settling. In both cases, the rate of collapse is backflow limited, while its overall magnitude is determined by a balance between gravitational stress and network elastic stress.     

Adhesion between an elastic body and a randomly rough hard surface

I have developed a theory of adhesion between an elastic solid and a hard randomly rough substrate. The theory takes into account that partial contact may occur between the solids on all length scales. I present numerical results for the case where the substrate surface is self-affine fractal. When the fractal dimension is close to 2, complete contact typically occurs in the macro-asperity contact areas, while when the fractal dimension is larger than 2.5, the area of (apparent) contact decreases continuously when the magnification is increased. An important result is that even when the surface roughness is so high that no adhesion can be detected in a pull-off experiment, the area of real contact (when adhesion is included) may still be several times larger than when the adhesion is neglected. Since it is the area of real contact which determines the sliding friction force, the adhesion interaction may strongly affect the friction force even when no adhesion can be detected in a pull-off experiment. Received 3 April 2002     

(μ-L1)(μ-L2)十羰基合三锇电子光谱的含时从头计算

用从头计算(ab initio)方法,在HF/CEP-4G水平上,全优化计算了Os₃(CO)₁₀(μ-L1)(μ-L2) [L1,L2=H,Cl,Br,I]簇合物的的分子几何构型,在此基础上对这些簇合物的前线轨道进行了讨论,发现对于M—M键,p轨道虽有贡献,但以s,d轨道的贡献为主,同时从Cl→I,随着桥配体原子序的增大,Os₃(CO)₁₀(μ-L)₂类簇合物的HOMO与NHOMO轨道能量依次升高,而Os₃(CO)₁₀(μ-H)(μ-L)类簇合物只有HOMO轨道能量依次升高,而Os₃(CO)₁₀(μ-L)₂类簇合物的LUMO与HOMO的能量差Δε_L-H及LUMO与NHOMO的能量差Δε_L-NH都依次变小,可以预示,簇合物的电子光谱基谱带将红移。用TDHF计算了这些簇合物的电子吸收光谱。计算结构表明,簇合物Os₃(CO)₁₀(μ-H)₂(I)的跃迁主要为π→σ*和σ→σ*,对于其他几个簇合物Os₃(CO)₁₀(μ-H)(μ-L) [L=Cl,Br,I] 和Os₃(CO)10(μ-L)₂[L=Cl,Br],电子吸收峰主要都发生在σ→σ*的跃迁。从Cl→I,随着桥配体原子序的增大,簇合物的电子光谱基谱带红移,且光谱线强度逐渐减弱。     

Local friction at a sliding interface between an elastomer and a rigid spherical probe

This paper reports on spatially resolved measurements of the shear stress distribution at a frictional interface between a flat rubber substrate and a glass lens. Silicone rubber specimens marked close to their surface by a colored pattern have been prepared in order to measure the surface displacement field induced by the steady-state friction of the spherical probe. The deconvolution of this displacement field then provides the actual shear stress distribution at the contact interface. When a smooth glass lens is used, a nearly constant shear stress is achieved within the contact. On the other hand, a bell-shaped shear stress distribution is obtained with rough lenses. These first results suggest that simple notions of real contact area and constant interface shear stress cannot account for the observed changes in local friction when roughness is varied.     

Adhesion between elastic bodies with randomly rough surfaces

I have developed a theory of adhesion between an elastic solid and a hard randomly rough substrate. The theory takes into account the fact that partial contact may occur between the solids on all length scales. I present numerical results for the case where the substrate surface is self-affine fractal. When the fractal dimension is close to 2, complete contact typically occurs in the macroasperity contact areas. For a fractal dimension larger than 2.5, the area of (apparent) contact decreases continuously when the magnification is increased.     

Hydrophobic properties of surfaces coated with fluoroalkylsiloxane and alkylsiloxane monolayers

A comparative analysis of hydrophobicity of fluoroalkylsiloxane and alkylsiloxane monolayers is presented. In order to compare wetting behavior on smooth and rough substrates, a simple model considering various self-assembly degrees of organic molecules and various area fractions of air inclusion is used. Sliding behavior for water on rough silanized needle-like surfaces is also evaluated. On smooth surfaces, regardless of assembly degree of coatings, contact angles of fluoroalkylsiloxane monolayers are always ∼10° larger. The difference, however, decreases when rough substrates with air inclusion are used. It is shown that assembly order of silane molecules and reduced water-solid contact area are the key factors leading to both high contact angles and low sliding angles. Such coatings are expected to be potential snow- and ice-repellent materials.     

The debate on the dependence of apparent contact angles on drop contact area or three-phase contact line: A review

A sessile drop is an isolated drop which has been deposited on a solid substrate where the wetted area is limited by the three-phase contact line and characterized by contact angle, contact radius and drop height. Although, wetting has been studied using contact angles of drops on solids for more than 200 years, the question remains unanswered: Is wetting of a rough and chemically heterogeneous surface controlled by the interactions within the solid/liquid contact area beneath the droplet or only at the three-phase contact line? After the publications of Pease in 1945, Extrand in 1997, 2003 and Gao and McCarthy in 2007 and 2009, it was proposed that advancing, receding contact angles, and contact angle hysteresis of rough and chemically heterogeneous surfaces are determined by interactions of the liquid and the solid at the three-phase contact line alone and the interfacial area within the contact perimeter is irrelevant. As a consequence of this statement, the well-known Wenzel (1934) and Cassie (1945) equations which were derived using the contact area approach are proposed to be invalid and should be abandoned. A hot debate started in the field of surface science after 2007, between the three-phase contact line and interfacial contact area approach defenders. This paper presents a review of the published articles on contact angles and summarizes the views of the both sides. After presenting a brief history of the contact angles and their measurement methods, we discussed the basic contact angle theory and applications of contact angles on the characterization of flat, rough and micropatterned superhydrophobic surfaces. The weak and strong sides of both three-phase contact line and contact area approaches were discussed in detail and some practical conclusions were drawn.     

High-field quasiparticle tunneling in Bi2Sr2CaCu2O(8+delta): negative magnetoresistance in the superconducting state

We report on the c-axis resistivity rho(c)(H) in Bi(2)Sr(2)CaCu(2)O(8+delta) that peaks in quasistatic magnetic fields up to 60 T. By suppressing the Josephson part of the two-channel (Cooper pair/quasiparticle) conductivity sigma(c)(H), we find that the negative slope of rho(c)(H) above the peak is due to quasiparticle tunneling conductivity sigma(q)(H) across the CuO2 layers below H(c2). At high fields (a) sigma(q)(H) grows linearly with H, and (b) rho(c)(T) tends to saturate ( sigma(c) not equal0) as T-->0, consistent with the scattering at the nodes of the d-wave gap. A superlinear sigma(q)(H) marks the normal state above T(c).     

Pair-Breaking Critical Current Density of Two-Band Superconductor MgB2

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Multigap superconductivity in sesquicarbides La2C3 and Y2C3

A complex structure of the superconducting order parameter in Ln2C3 (Ln=La,Y) is demonstrated by muon spin relaxation measurements in their mixed state. The muon depolarization rate sigma v(T)] exhibits a characteristic temperature dependence that can be perfectly described by a phenomenological double-gap model for nodeless superconductivity. While the magnitude of two gaps is similar between La2C3 and Y2C3, a significant difference in the interband coupling between those two cases is clearly observed in the behavior of sigma v(T).     

Collisional dark matter and the origin of massive black holes

If the cosmological dark matter is primarily in the form of an elementary particle which has mass m(p) and cross section for self-interaction sigma, then seed black holes (formed in stellar collapse) will grow in a Hubble time t(H) due to accretion of the dark matter to a mass, M(H) = sqrt[IC(9)(A)t(H)(sigma/G(3)m(p)c(2))] = 7.1x10(6)(sigma/m(p))(1/2)V(9/2)(c)t(1/2)(H,15) solar masses. Here I is a numerical factor, C(A) the galactic velocity dispersion, and V(c) its rotation velocity. For the same values of ( sigma/m(p)) that are attractive with respect to other cosmological desiderata, this produces massive black holes in the (10(6)-10(9))M( middle dot in circle) range observed, with the same dependence on a V(c) seen, and with a time dependence consistent with observations. Other astrophysical consequences of collisional dark matter and tests of the idea are noted.     

Dynamics of precursors to frictional sliding

We measure the spatial and temporal behavior of the true contact area A along a rough spatially extended interface between two blocks in frictional contact. Upon the application of shear the onset of motion is preceded by a discrete sequence of cracklike precursors, which are initiated at shear levels that are well below the threshold for static friction. These precursors arrest well before traversing the entire interface. They systematically increase in length with the applied shear force and significantly redistribute the true contact area along the interface. Thus, when frictional sliding occurs, the initially uniform contact area along the interface has already evolved to one that is highly nonuniform in space.     

Scaling of the magnetoconductivity of silicon MOSFETs: evidence for a quantum phase transition in two dimensions

For a broad range of electron densities n and temperatures T, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFETs can be scaled onto a universal curve with a single parameter H(sigma)(n,T), where H(sigma) obeys the empirical relation H(sigma) = A(n) [Delta(n)(2)+T2](1/2). The characteristic energy k(B)Delta associated with the magnetic field dependence of the conductivity decreases with decreasing density, and extrapolates to 0 at a critical density n(0), signaling the approach to a zero-temperature quantum phase transition. We show that H(sigma) = AT for densities near n(0).     

Observation of Bs production at the Y(5S) resonance

Using the CLEO detector at the Cornell Electron Storage Ring, we have observed the Bs meson in e+e- annihilation at the Y(5S) resonance. We find 14 candidates consistent with Bs decays into final states with a J/psi or a Ds(*)- . The probability that we have observed a background fluctuation is less than 8 x 10(-10) . We have established that at the energy of the Y(5S) resonance Bs production proceeds predominantly through the creation of Bs*Bs* pairs. We find sigma(e+e- --> Bs*Bs*) = [0.11(-0.03))(+0.04)(stat) +/- 0.02(syst)]nb , and set the following limits: sigma(e+e- --> BsBs)/ sigma(e+ e- --> Bs*Bs*) <0.16 and [sigma(e+e- --> BsBs*) + sigma(e+e- --> Bs*Bs)]/sigma(e+e- -->Bs*Bs*) < 0.16 (90% C.L.). The mass of the Bs* meson is measured to be M(Bs*) = [5.414+/- 0.001(stat) +/- 0.003(syst)] GeV/c2 .     

Charmonium Decays of Y(4260), psi(4160), and psi(4040)

Using data collected with the CLEO detector operating at the CESR e+e- collider at sqrt[s]=3.97-4.26 GeV, we investigate 15 charmonium decay modes of the psi(4040), psi(4160), and Y(4260) resonances. We confirm, at 11 sigma significance, the BABAR Y(4260)-->pi+pi- J/psi discovery, make the first observation of Y(4260)--> pi(0)pi(0) J/psi (5.1 sigma), and find the first evidence for Y(4260)-->K+K- J/psi(3.7 sigma). We measure e+e- cross sections at sqrt[s]=4.26 GeV as sigma(pi+pi- J/psi)=58(+12)(-10)+/-4 pb, sigma(pi(0)pi(0) J/psi)=23(+12)(-8)+/-1 pb, and sigma(K+K- J/psi)=9(+9)(-5)+/-1 pb, in which the uncertainties are statistical and systematic, respectively. Upper limits are placed on other decay rates from all three resonances.     

The reflection of ultrasound from partially contacting rough surfaces

Ultrasound is commonly used to detect and size cracks in a range of engineering components. Modeling techniques are well established for smooth and open cracks. However, real cracks are often rough (relative to the ultrasonic wavelength) and closed due to compressive stress. This paper describes an investigation into the combined effects of crack face roughness and closure on ultrasonic detectability. A contact model has been used to estimate the size and shape of scatterers (voids) at the interface of these rough surfaces when loaded. The response of such interfaces to excitation with a longitudinal ultrasonic pulse over a wide range of frequencies has been investigated. The interaction of ultrasound with this scattering interface is predicted using a finite-element model and good agreement with experiments on rough surfaces is shown. Results are shown for arrays of equi-sized scatterers and a distribution of scatterer sizes. It is shown that the response at high frequencies is dependent on the size, shape, and distribution of the scatterers. It is also shown that the finite-element results depart from the mass-spring model predictions when the product of wave number and scatterer half-width is greater than 0.4.     

Contact electrification between polymers and steel

Electrification occurs when metals are put into contact with polymers, and the mechanism is still not fully understood. In this paper, experimental study of contact electrification between a metal and polymers was conducted. Effects of contact cycle, load, and nominal area on electrification were investigated. Results showed that electrification charge increased with real contact area. However, experimental results showed that charge density increased with nominal area and decreased with load. The key factor that determined the charge density was contact stress. Charge density decreased with contact stress linearly. A quantitative relationship between charge density and contact stress was proposed.     

Raman spectroscopy of alkali halide hydration: hydrogen bond relaxation and polarization

The solute–solvent interaction of salts has a striking impact on various biological and industrial processes but its mechanism remains yet mysterious despite intensive studies since 1888 when Franz Hofmeister established the salt series. A combination of confocal Raman spectroscopy and contact angle measurements has enabled us to resolve the hydrogen bond relaxation (O:H―O, HB) and the associated charge polarization dynamics at different molecular site because of alkali halides hydration. Results show consistently that salt hydration softens the O:H phonon but stiffens H―O phonon cooperatively. The extent of HB relaxation and polarization is proportional to the electronegativity difference and ionic radius, following the order of Hofmeister series: X (R/η) = I (2.2/2.5) > Br (1.96/2.8) > Cl (1.81/3.0) > F (1.33/4.0) ≈ 0 for anions, and Y(R/η) = Na (0.98/0.9) > K (1.33/0.8) > Rb (1.49/0.8) > Cs (1.65/0.8) for cations. Observations suggest that ions create each an electric field that aligns, stretches, and polarizes water molecules, which relaxes the O:H―O bond cooperatively, depresses the molecular dynamics, and enhances the hydration shell viscosity and the skin stress. Exercises also demonstrate that Raman spectroscopy performs as a powerful tool for probing the molecular‐site‐resolved HB network relaxation dynamics in terms of phonon stiffness, molecular fluctuation dynamics, and phonon abundance transition under external stimulus. Copyright © 2016 John Wiley & Sons, Ltd.     

In-crystal and surface charge transport of electric-field-induced carriers in organic single-crystal semiconductors

Gate-voltage dependence of carrier mobility is measured in high-performance field-effect transistors of rubrene single crystals by simultaneous detection of the longitudinal conductivity sigma(square) and Hall coefficient R(H). The Hall mobility mu(H) (identical with sigma(square)R(H)) reaches nearly 10 cm(2)/V s when relatively low-density carriers (<10(11) cm(-2)) distribute into the crystal. mu(H) rapidly decreases with higher-density carriers as they are essentially confined to the surface and are subjected to randomness of the amorphous gate insulators. The mechanism to realize high carrier mobility in the organic transistor devices involves intrinsic-semiconductor character of the high-purity organic crystals and diffusive bandlike carrier transport in the bulk.     

Persistence in systems with algebraic interaction

Persistence in coarsening one-dimensional spin systems with a power-law interaction r(-1-sigma) is considered. Numerical studies indicate that for sufficiently large values of the interaction exponent sigma (sigma > or =1/2 in our simulations), persistence decays as an algebraic function of the length scale L, P(L) approximately L(-theta). The persistence exponent theta is found to be independent on the force exponent sigma and close to its value for the extremal (sigma-->infinity) model, theta =0.175 075 88. For smaller values of the force exponent (sigma < 1/2), finite size effects prevent the system from reaching the asymptotic regime. Scaling arguments suggest that in order to avoid significant boundary effects for small sigma, the system size should grow as [O(1/sigma)](1/sigma).