Exponential sensitivity to dephasing of electrical conduction through a quantum dot

According to random-matrix theory, interference effects in the conductance of a ballistic chaotic quantum dot should vanish proportional to (tau(phi)/tau(D))(p) when the dephasing time tau(phi) becomes small compared to the mean dwell time tau(D). Aleiner and Larkin have predicted that the power law crosses over to an exponential suppression proportional to exp((-tau(E)/tau(phi)) when tau(phi) drops below the Ehrenfest time tau(E). We report the first observation of this crossover in a computer simulation of universal conductance fluctuations. Their theory also predicts an exponential suppression proportional to exp((-tau(E)/tau(D)) in the absence of dephasing--which is not observed. We show that the effective random-matrix theory proposed previously for quantum dots without dephasing explains both observations.     

Dephasing by extremely dilute magnetic impurities revealed by Aharonov-Bohm oscillations

We have probed the magnetic field dependence of the electron phase coherence time tau(phi) by measuring the Aharonov-Bohm conductance oscillations of mesoscopic Cu rings. Whereas tau(phi) determined from the low-field magnetoresistance saturates below 1 K, the amplitude of Aharonov-Bohm h/e oscillations increases strongly on a magnetic field scale proportional to the temperature. This provides strong evidence that a likely explanation for the frequently observed saturation of tau(phi) at low temperature in weakly disordered metallic thin films is the presence of extremely dilute magnetic impurities.     

Quantum correction to conductivity close to a ferromagnetic quantum critical point in two dimensions

We study the temperature dependence of the conductivity due to quantum interference processes for a two-dimensional disordered itinerant electron system close to a ferromagnetic quantum critical point. Near the quantum critical point, the crossover between diffusive and ballistic regimes of quantum interference effects occurs at a temperature T*=1/taugamma(E(F)tau)2, where gamma is the parameter associated with the Landau damping of the spin fluctuations, tau is the impurity scattering time, and E(F) is the Fermi energy. For a generic choice of parameters, T* is smaller than the nominal crossover scale 1/tau. In the ballistic quantum critical regime, the conductivity behaves as T1/3.     

Dynamic localization in quantum dots: analytical theory

We analyze the response of a complex quantum-mechanical system (e.g., a quantum dot) to a time-dependent perturbation phi(t). Assuming the dot to be described by random-matrix theory for the Gaussian orthogonal ensemble, we find the quantum correction to the energy absorption rate as a function of the dephasing time t(phi). If phi(t) is a sum of d harmonics with incommensurate frequencies, the correction behaves similarly to that for the conductivity deltasigma(d)(t(phi)) in the d-dimensional Anderson model of the orthogonal symmetry class. For a generic periodic perturbation, the leading quantum correction is absent as in the systems of the unitary symmetry class, unless phi(-t+tau)=phi(t+tau) for some tau, which falls into the quasi-1D orthogonal universality class.     

Dephasing in disordered metals with superconductive grains

The temperature dependence of electron dephasing time tau(phi)(T) is calculated for a disordered metal with a small concentration of superconductive grains. Above the macroscopic superconducting transition line, when electrons in the metal are normal, Andreev reflection from the grains leads to a nearly temperature-independent contribution to the dephasing rate. In a broad temperature range tau(-1)(phi)(T) strongly exceeds the prediction of the classical theory of dephasing in normal disordered conductors, whereas magnetoresistance is dominated (in two dimensions) by the Maki-Tompson correction and is positive.     

Geometry-dependent dephasing in small metallic wires

Temperature dependent weak localization is measured in metallic nanowires in a previously unexplored size regime down to width w = 5 nm. The dephasing time, tau(phi), shows a low temperature T dependence close to quasi-1D theoretical expectations (tau(phi) approximately T(-2/3)) in the narrowest wires, but exhibits a relative saturation as T-->0 for wide samples of the same material, as observed previously. As only sample geometry is varied to exhibit both suppression and divergence of tau(phi), this finding provides a new constraint on models of dephasing phenomena.     

Metallic behavior of cyclotron relaxation time in two-dimensional systems

Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity ρ. The relaxation time τ(CR) shows a negative temperature dependence, which is similar to that of the transport scattering time τ(t) obtained from ρ. The ratio τ(CR)/τ(t) at 0.4 K increases as the electron density N(s) decreases, and exceeds unity when N(s) approaches the critical density for the metal-insulator transition.     

Experimental observation of quantum corrections to electrical resistivity in nanocrystalline soft magnetic alloys

X-ray diffraction patterns of nanocrystalline Fe-Cu-Nb-Si-B (FINEMET) alloys reveal that bcc α-Fe/α-FeSi crystallites with the average grain size of 20(5) nm are dispersed in amorphous matrix. Enhanced electron—electron interaction (EEI) and quantum interference (QI) effects as well as electron-magnon (and/or electron-spin fluctuation) scattering turn out to be the main mechanisms that govern the temperature dependence of resistivity. Of all the inelastic scattering processes, inelastic electron-phonon scattering is the most effective mechanism to destroy phase coherence of electron wave functions. The diffusion constant, density of states at the Fermi level and the inelastic scattering time have been estimated, for the first time, for the alloys in question Article presented at the International Symposium on Advances in Superconductivity and Magnetism: Materials, Mechanisms and Devices, ASMM2D-2001, 25–28 September 2001, Mangalore, India.     

Experimental estimates of dephasing time in molecular magnets

Muon spin relaxation measurements in isotropic molecular magnets (MM) with a spin value S ranging from 7/2 to 27/2 are used to determine the magnitude and origin of dephasing time tau(phi) of molecular magnets. It is found that tau(phi) approximately 10 nsec with no S or ligand dependence. This indicates a nuclear origin for the stochastic field. Since tau(phi) is a property of the environment, we argue that it is a number common to similar types of MM. Therefore, tau(phi) is shorter than the Zener and tunneling times of anisotropic MM such as Fe(8) or Mn(4) for standard laboratory sweep rates. Our findings call for a stochastic Landau-Zener theory in this particular case.     

Dwell-time-limited coherence in open quantum dots

We present measurements of the electron phase coherence time tau(varphi) on a wide range of open ballistic quantum dots (QDs) made from InGaAs heterostructures. The observed saturation of tau(varphi) below temperatures 0.5 K相似文献   

Absence of compressible edge channel rings in quantum antidots

We report resonant tunneling experiments in a quantum antidot sample in the integer quantum Hall regime. In particular, we have measured the temperature T dependence of the peak value of a conductance peak on the i = 2 plateau, where there are two peaks per magnetic flux quantum straight phi(0). We observe a T-1 dependence as expected when tunneling through only one electron state is possible. This result is incompatible with tunneling through a compressible ring of several degenerate states. We also observe, for the first time, three conductance peaks per straight phi(0) on the i = 3 plateau.     

Interference as a probe of spin incoherence in strongly interacting quantum wires

We show that interference experiments can be used to identify the spin-incoherent regime of strongly interacting one-dimensional conductors. Two qualitative signatures of spin incoherence are found: a strong magnetic field dependence of the interference contrast and an anomalous scaling of the interference contrast with the applied voltage, with a temperature and magnetic field dependent scaling exponent. The experiments distinguish the spin-incoherent from the spin-polarized regime, and so may be useful in deciding between alternative explanations proposed for the anomalous conductance quantization observed in quantum point contacts and quantum wires at low density.     

Impact of valley polarization on the resistivity in two dimensions

We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.     

Anomalous transport properties and phase diagram of the FeAs-based SmFeAsO1-xFx superconductors

We report the detailed phase diagram and anomalous transport properties of Fe-based high-T_{c} superconductors SmFeAsO1-xFx. It is found that superconductivity emerges at x approximately 0.07, and optimal doping takes place in the x approximately 0.20 sample with the highest T_{c} approximately 54 K. T_{c} increases monotonically with doping; the anomaly in resistivity from structural phase or spin-density-wave order is rapidly suppressed, suggesting a quantum critical point around x approximately 0.14. As manifestations, a linear temperature dependence of the resistivity shows up at high temperatures in the x<0.14 regime but at low temperatures just above T_{c} in the x>0.14 regime; a drop in carrier density evidenced by a pronounced rise in the Hall coefficient is observed below the temperature of the anomaly peak in resistivity. A scaling behavior is observed between the Hall angle and temperature: cottheta_{H} proportional, variantT;{1.5} for all samples with different x in SmFeAsO1-xFx system.     

Influence of high magnetic fields on the superconducting transition of one-dimensional Nb and MoGe nanowires

The effects of a strong magnetic field on superconducting Nb and MoGe nanowires with diameter approximately 10 nm have been studied. We have found that the Langer-Ambegaokar-McCumber-Halperin (LAMH) theory of thermally activated phase slips is applicable in a wide range of magnetic fields and describes well the temperature dependence of the wire resistance, over 11 orders of magnitude. The field dependence of the critical temperature, T(c), extracted from the LAMH fits is in good quantitative agreement with the theory of pair-breaking perturbations that takes into account both spin and orbital contributions. The extracted spin-orbit scattering time agrees with an estimate tau(s.o.) approximately tau(variant Planck's over 2pic/Ze(2))(4), where tau is the elastic scattering time and Z is the atomic number.     

Quantum corrections to the conductivity of a natural Nd<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript> Ce<Subscript>x</Subscript>CuO<Subscript>4</Subscript> superlattice

Temperature and magnetic field dependences of the resistivity and Hall coefficient in layered single-crystal Nd_2?xCe_xCuO₄ (x = 0.12) films are experimentally investigated and analyzed. It is shown that this material clearly exhibits quantum effects characteristic of 2D semiconductor structures: negative magnetoresistance caused by suppression of the interference quantum correction by a magnetic field, a near-logarithmic temperature dependence of the conductivity, and a temperature dependence of the Hall coefficient related to e-e interaction. It is shown that, when analyzing experimental data, it is necessary to take interlayer transitions into account. Such an approach provides quantitative agreement between experiment and the standard theory of quantum corrections.     

Activated scaling of classical and quantum spin glasses

A model for thermally activated dynamics in disordered systems shows that the linear and nonlinear susceptibility follows a generic exponential form with a "critical rounding," chi(1) proportional to chi(3) proportional to [T ln(t/tau(0)')/K](gamma/b phi) exp - [Tt(g)(phi b)ln(t/tau(0)'/K)](nu/b) (T=temperature, t=time, K=barrier constant, t(g) = 1 - T(SG)/T, and T(SG) = transition temperature; gamma>0 for chi(3) and <0 for chi(1)). This model, also valid in the presence of resonant tunneling states at energies K(0) < K [provided that K is replaced by K(0)+2T ln (1/Gamma(0)), where Gamma(0)(2) proportional, variant tunnel splitting of a spin S=1], is potentially applicable to a wide variety of systems opening the way for the study of thermally activated quantum phase transitions. The famous spin-glass system LiHo(x)Y(1-x) seems to follow this model.     

EFFECT OF TEMPERATURE ON ELECTRICAL RESISTIVITY OF A HYDROGENATED LaNi5 THIN FILM

The electrical resistivity of a hydrogenated LaNi₅ thin film has been investigated as a function of temperature in vacuum and in hydrogen. While the film was heated in vacuum for the first time, the change in resistivity exhibited different characteristics during different ranges of temperatures due to the competition of two effects owing to the lattice scattering of conductive electrons and the number of them. The resistivity had a sharp drop near 600 K, which originates from the formation of high conducting lanthanum hydride and nickel due to a reaction between the dissolved hydrogen and LaNi₅. The change in resistivity was not repeatable during the successive heating and cooling processes. When the film was heated under a hydrogen atmosphere, a drop in resistivity occurred near 700 K due to the reaction between LaNi₅ and the hydrogen atmosphere. The film showed a linear temperature dependence of receptivity with completeness of the reaction. It was found that the reaction was irreversible. The film lost the ability of hydrogen absorption after the reaction, and it had a phase change from LaNi₅ to LaH and Ni. This result was supported by X-ray diffraction patterns.     

Direct measurement of the coherence length of edge states in the integer quantum Hall regime

We have determined the finite temperature coherence length of edge states in the integer quantum Hall effect regime. This was realized by measuring the visibility of electronic Mach-Zehnder interferometers of different sizes, at filling factor 2. The visibility shows an exponential decay with the temperature. The characteristic temperature scale is found inversely proportional to the length of the interferometer arm, allowing one to define a coherence length l_(phi). The variations of l_(phi) with magnetic field are the same for all samples, with a maximum located at the upper end of the quantum Hall plateau. Our results provide the first accurate determination of l_(phi) in the quantum Hall regime.     

Direct measurement of the phase-coherence length in a GaAs/GaAlAs square network

The low temperature magnetoconductance of a large array of quantum coherent loops exhibits Altshuler-Aronov-Spivak oscillations with a periodicity corresponding to 1/2 flux quantum per loop. We show that the measurement of the harmonics content provides an accurate way to determine the electron phase-coherence length L(phi) in units of the lattice length with no adjustable parameters. We use this method to determine L(phi) in a square network realized from a 2D electron gas in a GaAs/GaAlAs heterojunction, with only a few conducting channels. The temperature dependence follows a power law T(-1/3) from 1.3 K to 25 mK with no saturation, as expected for 1D diffusive electronic motion and electron-electron scattering as the main decoherence mechanism.