Improvement of the Spectroscopic Constants of the PF(A(3)Pi) State and Assignment of the PF(A-X) Transition Dipole Function

High-resolution laser-excitation spectra were acquired for the v'=3-7 levels of the PF(A(3)Pi(0,1,2)<--X(3)Sigma(-)) transition from PF(X(3)Sigma(-)) molecules generated in a discharge flow reactor. These results were combined with lower resolution excitation spectra for the v'=8-11 levels and with existing high-resolution data in the literature for v'=0 and 1 to assign improved spectroscopic constants for PF(A(3)Pi(0,1,2)). The abnormal vibrational energy level spacings for all spin components of the PF(A(3)Pi) state are evidence for a homogeneous interaction with another (3)Pi state. The Lambda-doublet separation in the PF((3)Pi(0)) substate increases with vibrational level, which is taken as evidence for interaction with the PF(b(1)Sigma(+)) state. Laser-induced fluorescence spectra from individual v'=0-5 levels were used to obtain vibrational band intensities of the A-X transition. The strong dependence of the transition dipole on the r-centroid is consistent with the reduction in the radiative lifetimes with increasing v' level. The similarity between the isovalent PF(A(3)Pi) and SO(A(3)Pi) states is noted and the bond dissociation energy of PF(X(3)Sigma(-)) is discussed. Copyright 2001 Academic Press.     

Effect of interfacial shallow traps on polaron transport at the surface of organic semiconductors

The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap-dominated p-type organic field-effect transistors has been investigated. It has been observed that the transfer of electrons into the dielectric results in a decrease of the field-effect mobility of polarons, suggesting that additional shallow traps are generated in the conduction channel. Using this effect, the dependence of the field-effect mobility on the density of shallow traps, mu(N), has been measured, which allowed us to estimate the average polaron trapping time, tau_{tr}=50+/-10 ps, and the density of shallow traps, N0=(3+/-0.5) x 10(11) cm(-2), in the channel of single-crystal tetracene devices.     

Filling of traps with electrons in insulators subjected to intense electron irradiation

The efficiency of nonequilibrium electron trapping by capture centers in alkali halide crystals, quartz, and polymethyl methacrylate exposed to an intense electron beam with a beam current density of about 20 A/cm² is studied. The trapped charge is estimated from the amount of irradiation-induced electrification of high-resistivity materials. It is shown that traps having captured thermalized electrons become depleted via impact ionization due to the primary electrons of the beam and secondary electrons.     

Monte Carlo simulations of electron dynamics in N2/CO2 mixtures

Motivated by experimental investigations of electrical discharges in N₂/CO₂/H₂O, Monte Carlo (MC) electron dynamics simulations in atmospheric N₂/CO₂ mixtures were performed. The goal was to obtain electron energy distribution functions (EEDFs), mean free path, drift velocity, collision frequency and mean energy of electrons, rate coefficients of electron-impact reactions, ionisation and attachment coefficients, as functions of the reduced electric field strength (E/N) and of the concentration of individual gas components. The results obtained by MC simulations were fitted with polynomials of up to the 3rd order with reasonable accuracy for E/N above 80 Td. The studied parameters below 80 Td were strongly non-linear as functions of E/N. This is mostly due to the influence of elastic collisions of electrons with CO₂ molecules prevailing in CO₂-dominant mixtures for E/N < 40 Td, and vibrational excitation collisions of N₂ species prevailing in N₂-dominant mixtures for E/N from 40 to 80 Td. The effect of these electron-impact processes was specific for each of the studied parameters.     

The Perturbation between the G(1)Pi(g) and 2(1)Delta(g) States of (7)Li(2)

We have observed the rotational levels in the v = 2, 3, 5, 6, 7, and 8 vibrational manifolds of the 2(1)Delta(g) state of (7)Li(2) via the A(1)Sigma(+)(u) intermediate levels by DeltaLambda = 2 transitions. This violation of the DeltaLambda = 0, +/-1 selection rule is due to the interaction with the G(1)Pi(g) state. Band-by-band deperturbations of the G(1)Pi(g) approximately 2(1)Delta(g) (v(Pi), v(Delta)) = (11, 2), (12, 3), (15, 5), (16, 6), (18, 7), and (19, 8) bands have been performed. Deperturbed molecular constants and rotational-electronic interaction parameters are reported here. Copyright 2000 Academic Press.     

基于微陷阱结构的金属二次电子发射系数抑制研究

近年来,金属二次电子发射系数的抑制研究在加速器、大功率微波器件等领域得到了广泛关注.为评估表面形貌对抑制效果的影响,利用唯象概率模型计算方法对三角形沟槽、矩形沟槽、方孔及圆孔4种不同形状微陷阱结构的二次电子发射系数进行了研究,分析了微陷阱结构的形状、尺寸对二次电子发射系数抑制特性的影响规律.理论研究结果表明:陷阱结构的深宽比、孔隙率越大,则其二次电子发射系数抑制特性越明显;方孔形和圆孔形微陷阱结构的二次电子发射系数抑制效果优于三角形沟槽和矩形沟槽;具有大孔隙率的微陷阱结构表面的二次电子发射系数对入射角度的依赖显著弱于平滑表面.制备了具有不同表面形貌的金属样片并进行二次电子发射系数测试,所得实验规律与理论模拟规律符合较好.     

Far-Infrared Laser Magnetic Resonance Spectroscopic Study of the nu(2) Bending Fundamental of the CCN Radical in Its &Xtilde;(2)Pi(r) State

Bending vibration-rotation transitions between the (010) μ(2)Sigma(-) and (000) (2)Pi(r) vibronic states of the CCN radical in its ground electronic state have been observed using far-infrared laser magnetic resonance (FIR LMR) spectroscopy. Thirteen FIR laser lines were used to record 769 resonances. The LMR data, combined with previous data, were used to determine vibrational, Renner-Teller, fine-structure, rotational, hyperfine, and molecular g-factor parameters using a least-squares fitting routine. The model used was an N(2) effective Hamiltonian modified to include the Renner-Teller effect explicitly in a (2)Pi electronic state. The band origin for the (010) μ(2)Sigma(-) <-- (000) &Xtilde;(2)Pi(r) transition was determined to be 179.598176 +/- 0.000067 cm(-1). The spin-orbit splitting in the ground state was refined and the complete set of (14)N-hyperfine parameters determined for the first time.     

Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress

The kink effect is studied in an AlGaN/GaN high electron mobility transistor by measuring DC performance during fresh, short-term stress and recovery cycle with negligible degradation. Vdg plays an assistant role in detrapping electrons and short-term stress results in no creation of new category traps but an increase in number of active traps. A possible mechanism is proposed that electrical stress supplies traps with the electric field for activation and when device is under test field-assisted hot-electrons result in electrons detrapping from traps, thus deteriorating the kink effect. In addition, experiments show that the impact ionization is at a relatively low level, which is not the dominant mechanism compared with trapping effect. We analyse the complicated link between the kink effect and stress bias through groups of electrical stress states: Vds = 0-state, off-state, on-state (on-state with low voltage, high-power state, high field state). Finlly, a conclusion is drawn that electric field brings about more severe kink effect than hot electrons. With the assistance of electric field, hot electrons tend to be possible to modulate the charges in deep-level trap.     

Study of runaway electron behaviour during electron cyclotron resonance heating in the HL-2A Tokamak

During the current flat-top phase of electron cyclotron resonance heating discharges in the HL-2A Tokamak, the behaviour of runaway electrons has been studied by means of hard x-ray detectors and neutron diagnostics. During electron cyclotron resonance heating, it can be found that both hard x-ray radiation intensity and neutron emission flux fall rapidly to a very low level, which suggests that runaway electrons have been suppressed by electron cyclotron resonance heating. From the set of discharges studied in the present experiments, it has also been observed that the efficiency of runaway suppression by electron cyclotron resonance heating was apparently affected by two factors: electron cyclotron resonance heating power and duration. These results have been analysed by using a test particle model. The decrease of the toroidal electric field due to electron cyclotron resonance heating results in a rapid fall in the runaway electron energy that may lead to a suppression of runaway electrons. During electron cyclotron resonance heating with different powers and durations, the runaway electrons will experience different slowing down processes. These different decay processes are the major cause for influencing the efficiency of runaway suppression. This result is related to the safe operation of the Tokamak and may bring an effective control of runaway electrons.     

介质阻挡放电中亮暗点放电的谱线线形及振动温度

在氩气/空气的混合气体介质阻挡放电中,首次在高温条件下观察到亮点和暗点共存的放电,比较了中心亮点及四周暗点放电的谱线频移,并测量了它们的振动温度。实验采用氩原子ArⅠ(2P2→1S5)的发射谱线测量谱线频移,采用氮分子第二正带系(C3Πu→B3Πg)的发射谱线测量振动温度。结果表明:中心亮点放电中的ArⅠ(2P2→1S5)谱线的频移大于四周的暗点放电谱线的频移,表明前者电子密度较高;四周的暗点的放电振动温度高于中心亮点放电的振动温度。     

Experimental Characterization of the Higher Vibrationally Excited States of HCO(+): Determination of omega(2), x(22), g(22), and B(030)

Analyses of high Rydberg series of HCO converging to the (030) vibrational state of the cation establish rovibrational state-detailed thresholds for HCO(+). UV-visible laser double resonance isolates series for assignment. Strongly vertical Rydberg-Rydberg transitions from photoselected N' = 0 and N' = 2 rotational levels of the Sigma(-) Renner-Teller vibronic component of the 3ppi (2)Pi (030) complex define individual series converging to rotational levels, N(+) = 1 through 5 and 3 through 5 of the HCO(+) vibrational states (03(1)0) and (03(3)0), respectively. Extrapolation of autoionizing series locates the positions of these rovibrational states to within +/-0.01 cm(-1). The use of this information combined with precise ionization limits for lower vibrational states determined from earlier Rydberg extrapolations and spectroscopic information available from infrared absorption measurements enables an estimate of the force-field parameters for HCO(+) bending. These parameters include the harmonic bending frequency, omega(2) = 842.57 cm(-1), the vibrational angular momentum splitting constant, g(22) = 3.26 cm(-1), and the diagonal bending anharmonicity, x(22) = -2.53 cm(-1), separated from the off-diagonal contribution, x(12), by reference to ab initio calculations. Results of experiment on the higher vibrationally excited states of HCO(+) are compared with recent theoretical predictions. Copyright 2000 Academic Press.     

Novel internal target for electron scattering off unstable nuclei

A novel internal target has been developed, which will make electron scattering off short-lived radioactive nuclei possible in an electron storage ring. An "ion trapping" phenomenon in the electron storage ring was successfully utilized for the first time to form the target for electron scattering. Approximately 7 x 10(6) stable 133Cs ions were trapped along the electron beam axis for 85 ms at an electron beam current of 80 mA. The collision luminosity between the stored electrons and trapped Cs ions was determined to be 2.4(8) x 10(25) cm(-2) s(-1) by measuring elastically scattered electrons.     

Probing the electron delocalization in liquid water and ice at attosecond time scales

We determine electron delocalization rates in liquid water and ice using core-hole decay spectroscopy. The hydrogen-bonded network delocalizes the electrons in less than 500 as. Broken or weak hydrogen bonds--in the liquid or at the surface of ice--provide states where the electron remains localized longer than 20 fs. These asymmetrically bonded water species provide electron traps, acting as a strong precursor channel to the hydrated electron.     

Room-temperature electron spin dynamics in free-standing ZnO quantum dots

Conduction band electrons in colloidal ZnO quantum dots have been prepared photochemically and examined by electron paramagnetic resonance spectroscopy. Nanocrystals of 4.6 nm diameter containing single S-shell conduction band electrons have g(*)=1.962 and a room-temperature ensemble spin-dephasing time of T(2)(*)=25 ns, as determined from linewidth analysis. Increasing the electron population leads to increased g(*) and decreased T(2)(*), both associated with formation of P-shell configurations. A clear relationship between T(2)(*) and hyperfine coupling with 67Zn(I=5/2) is observed.     

常压氩/氮射频容性放电冷等离子体的发射光谱诊断

实验中在大气压下在射频(13.56 MHz)容性耦合的平板形金属电极的构型中实现了氩/氮射频α模式的辉光放电.首先,采用发射光谱的方法测量了氮分子(C 3Ⅱu)谱线随氮气含量的变化;其次,使用玻耳兹曼斜率法估算了OH谱带(A2∑+→X 2Ⅱ)的转动温度,并得到等离子体温度随输入功率的变化规律.最后,选取氮的第二正带(C...     

HREELS detection of resonance electron scattering in oriented polytetrafluoroethylene films

Resonance electron scattering from surfaces of oriented polytetrafluoroethylene (PTFE) has been investigated using high-resolution electron energy loss spectroscopy (HREELS). Oriented samples were made by friction-deposition onto gold-coated silicon wafers. A resonance enhancement of the 730 cm⁻¹, Raman-active ν (CC) stretch vibrational mode was detected near 5 eV beam energy with width of about 2 eV. The maximum intensity occurs for parallel alignment of the scattering plane with respect to the polymer chain, while no resonance is detected for perpendicular alignment. Studies were made for both specular and off-specular geometries. The origin of the resonance can be attributed to negative ion trapping into the (CC) σ¹ orbital. We have also obtained high resolutions of about 40 cm⁻¹ for the first time in polymer systems.     

Structure-dependent vibrational lifetimes of hydrogen in silicon

The lifetimes of the Si-H vibrational stretch modes of the H(*)(2) ( 2062 cm(-1)) and HV.VH((110)) ( 2072.5 cm(-1)) defects in crystalline Si are measured directly by transient bleaching spectroscopy from 10 K to room temperature. The interstitial-type defect H(*)(2) has a lifetime of 4.2 ps at 10 K, whereas the lifetime of the vacancy-type complex HV.VH((110)) is 2 orders of magnitude longer, 295 ps. The temperature dependence of the lifetime of H(*)(2) is governed by TA phonons, while HV.VH((110)) is governed by LA phonons. This behavior is attributed to the distinctly different local structure of these defects and the accompanying local vibrational modes.     

新型含咔唑聚芴类共轭聚电解质及其前驱体的合成与光电性能

采用Suzuki偶合反应成功地合成了一系列在主链上具有不同含量苯并噻二唑单元的聚咔唑和含胺基芴的衍生物:聚[3,6-(N-(2-乙基己基))咔唑-2,1,3-苯并噻二唑-9,9-双(N,N-二甲基胺丙基)芴](PCzN-BTDZ);通过对所得聚合物的季铵盐化后处理得到了其相应的聚电解质衍生物:聚[3,6-(N-(2-乙基己基))咔唑-2,1,3-苯并噻二唑-9,9-(双(3′-(N,N-二甲基)-N-乙基铵)丙基)芴]二溴(PCzNBr-BTDZ)。通过对它们的电致发光性能的研究,发现所有的聚合物用高功函数铝作阴极的器件具有和用钡/铝作阴极的器件相近的发光性能,说明这类聚合物具有良好的电子注入性能。不同比例的2,1,3-苯并噻二唑(BTDZ)的引入使聚合物中发生有效的能量转移,调节了聚合物的发光颜色;同时也提高了聚合物的器件性能。其中聚合物PCzN-BTDZ1在器件结构为ITO/PEDOT/PVK/Polymer/BaAl时的效率达0.99%,高于PCzN在相同器件结构时的效率(0.14%)。     

Terahertz time-domain magnetospectroscopy of a high-mobility two-dimensional electron gas

We have observed cyclotron resonance in a high-mobility GaAs/AlGaAs two-dimensional electron gas by using the techniques of terahertz time-domain spectroscopy combined with magnetic fields. From this, we calculate the real and imaginary parts of the diagonal elements of the magnetoconductivity tensor, which in turn allows us to extract the concentration, effective mass, and scattering time of the electrons in the sample. We demonstrate the utility of ultrafast terahertz spectroscopy, which can recover the true linewidth of cyclotron resonance in a high-mobility (>10(6) cm(2)V(-1)s(-1)) sample without being affected by the saturation effect.     

First-principles calculations of F-, Cl-, and N-related defects of amorphous SiO_2 and their impacts on carrier trapping and proton release

The first-principles calculations based on density functional theory are performed to study F-,Cl-,and N-related defects of amorphous SiO2(a-SiO2) and their impacts on carrier trapping and proton release.The possible geometric configurations of the impurity-related defects,the formation energies,the hole or electron trapping of the neutral defects,and the mechanisms to suppress proton diffusion by doping N are investigated.It is demonstrated by the calculations that the impurity atoms can interact with the oxygen vacancies and result in impurity-related defects.The reactions can be utilized to saturate oxygen vacancies that will cause ionization damage to the semiconducting devices.Moreover,the calculated formation energy indicates that the F-or Cl-related oxygen vacancy defect is a deep hole trap,which can trap holes and prevent them from diffusing to the a-SiO2/Si interface.However,three N-related defects,namely N(2)o-H,N(2)o=O,and N(3)o-Vo,tend to act as shallow hole traps to facilitate hole transportation during device operation.The N(2)o and N(3)o configurations can be negatively charged as deep electron traps during the oxide charge buildup after ionization radiation.In addition,the nudged elastic band(NEB) calculations show that four N-related defects,namely N(2)o,N(2)o-H,N(2)o=O,and N(3)o are capable of capturing protons and preventing them from diffusing to and de-passivating the interface.This research reveals the fundamental properties of the F-,Cl-,and N-related defects in amorphous silica and the details of the reactions of the carrier trapping and proton release.The findings help to understand the microscopic mechanisms that alleviate ionization damage of semiconducting devices by doping a-SiO2.