基于MoO_3/Au/MoO_3透明电极的有机太阳能电池

以透明导电薄膜Mo O3/Au/Mo O3代替铟锡氧化物(ITO)作为有机太阳能电池(OSCs)的阳极,研究了一系列结构为Mo O3/Au/Mo O3的透明电极和Mo O3(y nm)/Au(x nm)/Mo O3(y nm)/Cu Pc(25 nm)/C60(40nm)/BCP(8 nm)/Al(100 nm)的有机太阳能电池。研究表明,Mo O3/Au/Mo O3电极的光电特性可通过改变各层薄膜厚度加以调控,在Mo O3薄膜厚度为40 nm、Au薄膜厚度为10 nm时性能最优,且以该薄膜为电极的有机太阳能电池器件的性能接近于电极为ITO的有机太阳能电池器件。     

基于金属掺杂ITO透明导电层的紫外LED制备

为降低ITO薄膜对紫外波段的光吸收,制备低电压高功率的紫外LED,研究了一种基于金属掺杂ITO透明导电层的365 nm紫外LED的制备工艺。利用1 cm厚的石英片生长了不同厚度ITO薄膜以及在ITO上掺杂不同金属的新型薄膜,并研究了在不同的退火条件下这种薄膜的电阻和透过率,分析了掺杂金属ITO薄膜的带隙变化。将这种掺杂的ITO薄膜生长在365 nm外延片上并完成电极生长,制备成14 mil×28 mil的正装LED芯片。利用电致发光（EL）设备对LED光电性能进行测试并对比。实验结果表明:掺Al金属的ITO薄膜能够相对ITO薄膜的带隙提高0.15 eV。在600℃退火后,方块电阻降低6.2 Ω/□,透过率在356 nm处达到90.8%。在120 mA注入电流下,365 nm LED的电压降低0.3 V,功率提高14.7%。ITO薄膜掺金属能够影响薄膜带隙,改变紫光LED光电性能。     

干涉效应对ITO薄膜光学性能的影响

为揭示ITO薄膜膜厚对透光率及色泽感影响规律,本文采用TFCalc光学薄膜设计软件计算了50～700 nm膜厚的ITO薄膜可见光透光率,平均透光率和人眼最为敏感波长550 nm的透光率与膜厚的关系.采用膜层干涉理论研究了ITO膜厚和入射角对其透光率和色泽感影响规律和物理机制.研究结果表明:对特定膜厚的ITO薄膜,其可见光随膜厚增加会出现系列透射峰,膜厚越大,对应透射峰也相应增加.ITO薄膜可见光透光率,平均透光率和特定波长550 nm的可见光透光率随膜厚的增加呈锯齿状;随膜厚增加,ITO薄膜的颜色呈现黄绿色、橙色、紫红色、青色、黄绿色周期性的变化.当ITO膜厚为300 nm,入射角从30°增加到60°时,薄膜色泽从暗紫色变为亮紫色.通过本论文的研究,建立了ITO薄膜和膜厚关系的色卡,这对工业控制及改善ITO薄膜的色泽提供技术支撑.     

1 064 nm激光对氧化铟锡薄膜的损伤研究

 液晶光学器件在激光光束精密控制上具有重要应用前景,氧化铟锡（ITO）薄膜作为液晶光学器件的透明导电电极,是液晶器件激光损伤的薄弱环节。为此,建立了ITO薄膜激光热损伤物理模型。理论计算结果表明：1 064 nm激光对ITO薄膜的损伤主要为热应力损伤;连续激光辐照下,薄膜损伤始于靠近界面的玻璃基底内;脉冲激光辐照下,温升主要发生在光斑范围内的膜层,薄膜损伤从表面开始。利用泵浦探测技术,研究了ITO薄膜的损伤情况,测量了不同功率密度激光辐照后薄膜的方块电阻,结合1-on-1法测定了ITO薄膜的50%损伤几率阈值。实验结果表明：薄膜越厚,方块电阻越小,激光损伤阈值越低;薄膜未完全损伤前,方块电阻随激光功率密度的增加而增大。理论计算与实验结果吻合较好。设计液晶光学器件中的ITO薄膜电极厚度时,应综合考虑激光损伤、透光率及薄膜电阻的影响。     

透明导电电极对聚合物太阳能电池光学性能的影响北大核心CSCD

采用传输矩阵法研究了基于MoO3/Ag/MoO3(MAM)透明导电电极和ITO电极的聚合物太阳能电池的光学性能。分别对电池耦合层厚度、活化层厚度和金属电极进行了优化,得到了优良效率的结构。结果表明,MAM与ITO有机太阳能电池在不同活性层厚度和不同光学间隔层厚度条件下有明显的光学性能差异;对于薄活性层MAM电极器件(100nm),最大短路电流密度可达到16.85mA/cm^2,比ITO器件提高了7.3mA/cm^2,而对于厚活性层MAM电极(270nm),ITO电极器件的光学性能明显优于MAM器件;还通过改变光学间隔层LiF的厚度进行计算,得出本仿真条件下两种结构性能差异的临界光学间隔层厚度为30nm。     

X光激光薄膜锗靶的制备

 介绍了X光激光薄膜锗靶的制备工艺，在厚度为90nm的formvar膜上，采用磁控溅射技术沉积30~60nm厚的锗膜。对锗膜的应力进行了初步的测试与分析，制得的薄膜经干涉仪测量符合要求。     

无机厚膜发光器件绝缘层的研究

采用丝网印刷技术,在Al2O3陶瓷基板上印刷、高温烧结内电极及绝缘层,制备出陶瓷厚膜基板,进而制备了新型厚膜电致发光显示器(TDEL)。整个器件结构为陶瓷基板/内电极/厚膜绝缘层/发光层/薄膜绝缘层/ITO透明电极。研究不同结构的无机厚膜发光器件对器件性能的影响,并对器件的亮度—电压、亮度—频率进行测量。结果显示绝缘层在无机发光器件中不是单纯的保护作用,它对器件的性能有十分重要的影响。主要是对注入电子的加速作用,从而提高发光亮度。绝缘层本身对无机厚膜发光器件的发光机理没有关系。     

基于铝浸润层的超薄银透明导电薄膜研究北大核心CSCD

超薄银薄膜具有高柔韧性和优良的光电性能,是用于透明导电电极的潜在材料。通过电阻热蒸发技术以金属铝作为浸润层制备超薄银透明导电薄膜。引入铝浸润层降低银薄膜的阈值厚度,使银薄膜在K9玻璃基底上以尽可能低的厚度达到连续。对不同厚度铝浸润层上银薄膜方块电阻进行测试,经SEM图像验证后得出,1 nm铝浸润层对银薄膜具有较好的浸润效果。随后采用相同的工艺在1 nm铝浸润层上制备了不同厚度的银薄膜,透过率和方阻测试结果表明,1 nm铝浸润层上制备的10 nm银薄膜方阻值可达到13Ω/,其在0.4μm~2.5μm波段内透过率可达到50%以上。     

紫外可见吸收光谱仪与椭偏测厚仪联用测量透明光电子薄膜的厚度

采用椭偏测厚仪测量薄膜的折射率,用来修正紫外可见吸收光谱仪极值法测量膜厚的数据.通过制备掺铝氧化锌(ZAO)薄膜及SEM断口观察进行实验验证,证实该修正方法有助于提高膜厚测量精度.联用这2种常规仪器,可以方便地获得0~20μm宽范围的透明光电子薄膜的厚度,数据采集与处理简单快捷,可满足大部分薄膜工艺研究和生产的需要.     

磁控溅射制备本征ZnO/Ag/ZnO透明导电薄膜的性质研究

室温下采用射频磁控溅射氧化锌（ZnO）粉末靶、银（Ag）靶,在玻璃衬底上制备ZnO/Ag/ZnO透明导电薄膜。首先,ZnO厚度为30 nm时,改变Ag厚度制备3层透明导电薄膜,研究Ag层厚度及膜层间配比对光电性能的影响;其次,按ZnO∶Ag厚度比为30∶11比例制备不同厚度的3层透明导电薄膜,研究多层厚度对薄膜光电性能的影响。结果表明：Ag厚度为8 nm及11 nm的ZnO/Ag/ZnO表面相对平整,结晶程度较好,在可见光范围内最高透过率达到90%及86%,并且方块电阻为6 Ω/□及3.20 Ω/□,具有优良的光电性;当按配比制备ZnO/Ag/ZnO 3层膜时,增加ZnO厚度对Ag层的增透作用反而减弱,同时增加Ag层厚度也会降低3层薄膜的整体光学性。     

通过插入Au薄膜改善绿光OLED器件的发光色纯度

在一些有机电致发光器件中,Au常被用作阳极,研究者希望Au在导电的同时兼具半透明可出光的属性,这要求Au在能导电的同时厚度要尽量薄。因此制备两种金属共同组成电极成为了选择。将半透明Au/Al层插入阳极一侧,制备了结构为ITO/Al(16 nm)/Au(10 nm)/TPD(30 nm)/AlQ(30 nm)/LiF(0.5 nm)/Al的OLED器件,相对于器件ITO/TPD(30 nm)/AlQ(30 nm)/LiF(0.5 nm)/Al在长波方向出现了光谱窄化现象,通过分析和实验判断该现象是Au薄膜特有的对光的选择透过性造成,而并非微腔效应。阳极一侧加入了Au/Al的器件保持了广视角无角度依赖的优点,同时可以输出滤掉部分红光的纯度更高的发光,发光色纯度得到了改善。     

基于低维相变薄膜的显示器件光学性质的研究

采用传输矩阵模型研究了基于低维相变薄膜的显示器件的光学特性与器件结构的关系。显示器件的类型有反射型和透射型,器件结构的关键参数包括Ge_2Sb_2Te_5(GST)层的厚度、ITO层的厚度、GST层的晶态与非晶态的变化。结果表明:对于反射型器件,ITO层的厚度对器件的反射光谱影响较大,可以通过改变ITO层的厚度达到改变器件颜色的效果;GST层的厚度为12 nm时,GST的晶态与非晶态的变化使器件有最好的颜色对比度且消耗较低的电功率。对于透射型器件,通过使用超薄的GST薄膜,器件的透明度可以保持很高,器件的透明度在GST的厚度超过几纳米后迅速下降。     

Fabrication of transparent double-walled carbon nanotubes flexible matrix touch panel by laser ablation technique

This study reports on the fabrication of transparent double-walled carbon nanotubes (DWNTs) flexible matrix touch panel using the method of laser ablation. We employed an Nd:YAG laser (1064 nm) to pattern transparent DWNT thin film pre-coated on a PET substrate and successfully fabricated a flexible matrix touch panel. By increasing the laser energy, the ablation depth of transparent DWNT flexible thin film is increased but the sheet resistance (Ω/sq) is decreased. When the laser energy intensity reaches 117 mJ/cm², the DWNTs can be completely ablated from transparent DWNT flexible thin film. This method is rapid, simple, applicable to large-area processing and thus is potential for mass production.     

Characteristic difference between ITO/ZrCu and ITO/Ag bi-layer films as transparent electrodes deposited on PET substrate

The metallic-glass film of ZrCu layer deposited by co-sputtering was utilized as the metallic layer in the bi-layer structure transparent conductive electrode of ITO/ZrCu (IZC) deposited on the PET substrate using magnetron sputtering at room temperature. In addition, the pure Ag metal layer was applied in the same structure of transparent conductive film, ITO/Ag, in comparison with the IZC film. The ZrCu layer could form a continuous and smooth film in thickness lower than 6 nm, compared with the island structure of pure Ag layer of the same thickness. The 30 nm ITO/3 nm ZrCu films could show the optical transmittance of 73% at 550 nm wavelength. The 30 nm ITO/12 nm ZrCu films could show the better sheet resistance of 20 Ω/sq, but it was still worse than that of the ITO/Ag films. It was suggested that an alloy system with lower resistivity and negative mixing heat between atoms might be another way to form a continuous layer in thickness lower than 6 nm for metal film.     

Laser-driven high-resolution patterning of indium tin oxide thin film for electronic device

We here introduce a laser-driven process to pattern transparent thin films on transparent substrates. This method utilizes a pre-patterned metal film as the dynamic release layer and the transparent thin film is selectively removed by a thermo-elastic force laser-induced in the underlying metal layer. High-fidelity indium tin oxide (ITO) thin film patterns were fabricated on plastic and glass substrates using a pulsed Nd:YAG laser. Tens of square centimeters could be patterned with several pulse shots. We fabricated a pentacene thin film transistor with ITO source and drain electrodes and observed a very low off-current level. This tells that the channel area between ITO electrodes was completely etched out by this laser-driven process. Combined with the absence of photoresist and chemical etching steps, this method provides a simple high-resolution route to pattern transparent thin films over large areas at low temperatures.     

Plasma-based sputtering of indium tin oxide for the application of photovoltaic cells

Transparent and conducting indium tin oxide (ITO) thin films were deposited on soda lime glass substrates by RF plasma magnetron sputtering at room temperature. The effect of thickness (100, 200 and 300?nm) on the physical (structural, optical, electrical) properties of ITO thin films was investigated systematically. It is observed that with an increase in thickness, the X-ray diffraction data indicate polycrystalline films with grain orientations predominantly along (222) and (400) directions; the average grain size increases from 10 to 30?nm; the optical band gap increases from 3.68 to 3.73?eV and the transmission decrease from 80% to 70% . Four-point probes show a low resistivity (2.4×10^?5?Ω?cm) values for film with a thickness 300?nm. Present work shows that the ITO is a promising transparent conductive oxide material for the solar cell application.     

Laser direct imaging of transparent indium tin oxide electrodes using high speed stitching techniques

To accomplish an electrode patterning in large area, we present a high speed stitching technique used in an ultraviolet laser processing system and investigate the interaction between laser beams and indium tin oxide (ITO) thin films deposited on glass substrates. After optimizing the process parameters of the laser direct imaging (LDI) for the large-area electrode patterning, the ablated lines looked like regularly fish-scale marks of about a 40 μm diameter and a 120 nm depth around the processing path. The parameters includes the laser power of 1W, the scanning speed of galvanometers of 800 mm/s, and the laser pulse repetition frequency of 50 kHz. Moreover, the resistance value of the ablated ITO thin film is larger than 200MΩ that is electrically insulated from the other regions of electrode structure. LDI technology with UV laser beam has great potential applications in patterning on wafer or sapphire substrates and patterning a conductive layer deposited on the touch panels for semiconductor and optoelectric industries, respectively.     

Transparent conducting oxides for electrode applications in light emitting and absorbing devices

In both light emitting devices such as light emitting diodes (LEDs), and light absorbing devices such as solar cells (also photodetectors), which are gaining considerable interest for their energy saving and energy production capability, respectively, a compromise must be struck between the need to increase the light emitting/absorbing area/potential and the need for low series resistance of the metal contact grid. This undesirable compromise can be mitigated by using transparent conducting oxides (TCOs), which heretofore have been dominated by ITO (indium tin oxide—an In-rich alloy of indium oxide and tin oxide). Due to the expected scarcity of Indium used in ITO, efforts are underway to develop indium-free TCOs for the above-mentioned devices as well as flat panel displays. ZnO heavily doped with Ga or Al (GZO or AZO) is becoming a very attractive candidate for future generation TCOs. GZO and AZO as well as multilayer TCOs consisting of two TCO layers with a thin metal layer in between have been widely investigated for LEDs and solar cells to enhance device performance. This article succinctly reviews the latest developments in and properties of TCOs, particularly in relation to thin film transparent electrode applications for LEDs and solar cells. Pertinent critical issues and possible solutions are provided as well.