Two-dimensional atomic hydrogen concentration maps in hot-filament diamond-deposition environment

This paper reports the two-dimensional mapping of atomic hydrogen concentration with two-photon excited laser induced fluorescence in a multi-wire grid hot-filament chemical vapor deposition reactor. The measurements were made in a diamond film deposition environment under different filament temperatures and wire configurations. The measurement was calibrated with a titration reaction using NO₂ as a titrant. The kinetic gas temperature in the reactor was measured from the Doppler broadening of the Lyman-β transition excited in the fluorescence. The filament temperature was found to have a significant effect on atomic hydrogen production and transfer to the substrate. The axial concentration distributions were compared to a one-dimensional kinetic gas–surface chemistry model with good agreement. The model produced a reasonable estimate for the bulk diamond film growth rate. Received: 25 June 2001 / Revised version: 15 February 2002 / Published online: 2 May 2002     

Experimentally based correction procedures for planar laser-induced fluorescence measurements of mean species concentration

Experimentally-based correction procedures are demonstrated which enhance the quantitative nature of planar laser-induced fluorescence (PLIF) images for mean species concentration by correcting for the influence of the electronic quenching rate coefficient. Implementation of these methods requires only the ability to make PLIF and laser-saturated fluorescence (LSF) measurements. Though applied herein to NO, these procedures are broadly applicable both in terms of species and users. Moreover, they are generally effective regardless of the error gradients associated with spatial variations in the electronic quenching rate coefficient. In such general environments, these methods produce quenching-corrected, spatially resolved PLIF images of mean species concentration with a total uncertainty equivalent to that of a single LSF measurement. Received: 22 November 1999 / Revised version: 3 March 2000 / Published online: 16 June 2000     

Comparison of laser-induced and planar laser-induced fluorescence measurements of nitric oxide in a high-pressure, swirl-stabilized, spray flame

We report spatially resolved linear laser-induced fluorescence (LIF) and planar laser-induced fluorescence (PLIF) measurements of nitric oxide (NO) in a pre-heated, high-pressure (4.27 atm), lean direct-injection (LDI) spray flame. The feasibility of using PLIF in lieu of LIF is assessed with respect to measuring NO concentrations in high-pressure LDI spray flames. NO is excited via the resonant Q₂(26.5) transition of the γ(0,0) band while a non-resonant wavelength is employed to subtract background interferences. LIF detection is performed in a 2-nm region centered on the γ(0,1) band. PLIF detection is performed in a 68-nm window that captures fluorescence from several vibrational bands. An in situ NO doping scheme for fluorescence calibration is successfully employed to quantify the LIF signals. However, a similar calibration scheme for the reduction of PLIF images to quantitative field measurements is plagued by the laser-excited background. Excitation scans and calibration comparisons have been performed to assess the background contribution for PLIF detection. Quantitative radial NO profiles measured by LIF are presented and analyzed so as to correct the PLIF measurements to within the accuracy bars of the LIF measurements via a single-point scaling of the PLIF image. Received: 23 November 1999 / Revised version: 17 January 2000 / Published online: 27 April 2000     

Nucleation and initial growth of diamond by biased hot filament chemical vapour deposition

6 cm^-2 for non-scratched silicon. The maximum value of the nucleation density was over 10¹¹ cm^-2 on mirror-polished Si(100) at -300 V. The transportation process of the ion flux from the filament to the substrate is discussed in detail for biased substrates. The nucleation enhancement by the positive bias is believed to be a result of the increased impingement of the electrons emitted from the filament to the substrate surface. The studies have shown that electron emission from diamond plays a key role in negative-bias-enhanced nucleation by accelerating the dissociation of molecular hydrogen and hydrocarbon species into various free radicals and causing a plasma to be ignited near the substrate surface. The negative bias pretreatment is also a critical step in growing heteroepitaxial diamond films: the enlargement of the area of diamond clusters in contact with the substrate enhances the orientated growth of the films. Received: 18 October 1996/Accepted: 4 February 1997     

Al2O3 thin films by plasma-enhanced chemical vapour deposition using trimethyl-amine alane (TMAA) as the Al precursor

2 O₃ thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-amine alane (TMAA) as the Al precursor. The thin films were deposited on both Si and quartz silica (SiO₂) substrates. Deposition rates were typically 60 Å min^-1 keeping the TMAA temperature constant at 45 °C. The deposited Al₂O₃ thin films were stoichiometric alumina with low carbon contamination (0.7–1.3 At%). The refractive index ranged from 1.54 to 1.62 depending on the deposition conditions. The deposition rate was studied as a function of both the RF power and the substrate temperature. The structure and the surface of the deposited Al₂O₃ thin films were studied using X-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy (SEM). Received: 20 May 1997/Accepted: 12 June 1997     

Polycrystalline silicon films obtained by hot-wire chemical vapour deposition

Silicon films were deposited at moderate substrate temperatures (280–500° C) from pure silane and a silane-hydrogen mixture (10% SiH₄, 90% H₂) in a hotwire CVD reactor. The morphology, structure and composition of the samples were studied with scanning electron microscopy, transmission electron microscopy, transmission electron diffraction, X-ray diffraction, Raman spectroscopy and secondary ion mass spectrometry. The sample deposited at 500° C with pure silane has an amorphous structure, whereas the samples obtained from silane diluted in hydrogen have a polycrystalline structure, even that grown at the lowest temperature (280° C). Polycrystalline samples have a columnar structure with 0.3–1 m crystallite sizes with preferential orientation in [220] direction. Deposition rates depend on the filament-substrate distance and range from 9.5 to 37 Å/s for the polycrystalline samples. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. Moreover, it is expected to be easily scaled up for applications to large-area optoelectronic devices and to photovoltaic solar cells.     

Physical mechanism of hydrogen deposition from a scanning tunneling microscopy tip

, and subsequently deposited onto the surface by the application of -8.5 V 300 ms pulses to the sample. The physical mechanisms involved are hydrogen diffusion on the tip via field-gradient-induced diffusion and hydrogen deposition due to electronic excitation. Received: 7 November 1996/Accepted: 12 February 1997     

Single-port optical access for spectroscopic measurements in industrial flue gas ducts

An in situ optical access to industrial-scale flue-gas ducts under high pressure has been designed and realised. The system is used here for the determination, by excimer-laser-induced fragmentation fluorescence (ELIF), of alkali species released from the combustion of coal in a pressurised circulating fluidised bed (PCFB) combustor. However, it could be applied to the detection of other species in a variety of industrial plants. The essential feature of the design is the access for the light source and collection of signal via the same, single window. The set-up is compact, robust and durable, having been tested under realistic flue-gas conditions for periods of up to two weeks in the PCFB pilot plant. The main features of the access are described and examples of data collected are presented to demonstrate its capabilities. Received: 3 August 1998 / Revised version: 16 February 1999 / Published online: 26 May 1999     

Organic molecular beam deposition combined with a laser-induced chemical reaction

Received: 12 March 1998/Accepted: 15 March 1998     

Flatness improvement of InP using phosphine modulation metalorganic chemical vapor deposition

Received: 18 September 1996/Accepted: 4 December 1996     

Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition

A new preparing technology, very high frequency plasma assisted reactive thermal chemical vapour deposition （VHFPA-RTCVD）, is introduced to prepare SiGe：H thin films on substrate kept at a lower temperature. In the previous work, reactive thermal chemical vapour deposition （I~TCVD） technology was successfully used to prepare SiGe：H thin films, but the temperature of the substrate needed to exceed 400℃. In this work, very high frequency plasma method is used to assist RTCVD technology in reducing the temperature of substrate by largely enhancing the temperature of reacting gases on the surface of the substrate. The growth rate, structural properties, surface morphology, photo- conductivity and dark-conductivity of SiGe：H thin films prepared by this new technology are investigated for films with different germanium concentrations, and the experimental results are discussed.     

Self-defocusing of light in copper vapour

2 for radiation red detuned with respect to the copper atomic transition and found it to be in good agreement with our calculated value of n₂. Received: 21 June 1996     

Evolution and impingement of an automotive fuel spray investigated with simultaneous Mie/LIF techniques

The spatial and temporal evolution of an automotive hollow-cone-type spray was investigated with laser-based imaging diagnostics. Optical conditions of an IC engine were emulated with a test cell that was built from an engine cylinder head to hold a high-pressure gasoline-fuel injector. The use of iso-octane fuel that was doped with 3-pentanone allowed measurements of laser-induced fluorescence (LIF) after excitation with a KrF excimer-laser beam. A versatile optical filter system was designed and built that permits simultaneous measurements of Mie-scattering and laser-induced-fluorescence images using a single laser-light sheet and a single intensified CCD camera. The influence of background signals, caused by reflection of signal light from surfaces, laser-sheet intensity attenuation and signal decrease by scattering, was characterized. Mass distributions showed a distinct pre-spray phase, more so than the Sauter mean diameter (SMD) that was determined from the ratio of LIF to Mie signals using single pulse as well as averaged image pairs. Significant changes in SMD distributions were found after the spray had impinged on a flat surface. The impingement also led to the buildup of a liquid film whose thickness was quantitatively determined from LIF images. Received: 5 December 2000 / Revised version: 28 February 2001 / Published online: 23 May 2001     

Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition

Received: 24 March 1998/Accepted: 10 July 1998     

A study of the Soret effect in laser-induced chemical vapor deposition

This paper presents an investigation of the modeling of the process of pyrolytic laser-induced chemical vapor deposition (LCVD) applied to study the Soret effect. LCVD is a thermally activated process characterized by strongly coupled mass and energy transport phenomena, together with chemical reactions, which are difficult to investigate experimentally. A physical and numerical model based on a commercial computational fluid dynamics package is developed and used to simulate a reactor operating at conditions of room temperature and pressure. The proposed numerical methodology will allow us to assess and analyze the effect of various factors controlling the process, and in particular the Soret effect. This numerical model is validated by comparison with the measured growth rate of the fiber. While several studies have proposed simulations of the LCVD process, this is among the first attempts at including the Soret effect in the numerical modeling at the micro-scale level. It is expected that the fundamental insights thus obtained will guide experimental investigations which can be applied to establish reactor design and process control guidelines.     

Formation of deep p–n junctions in p-type Czochralski grown silicon by hydrogen plasma treatment

Received: 15 May 1997/Accepted: 10 September 1997     

Laser-induced fluorescence of seeded nitric oxide as a flame thermometer

Received: 10 June 1997/Revised version: 25 November 1997     

Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition

The B- and P-doped hydrogenated nanocrystalline silicon films (nc-Si\jz{0.2ex}{:}H) are prepared by plasma-enhanced chemical vapour deposition (PECVD). The microstructures of doped nc-Si\jz{0.2ex}{:}H films are carefully and systematically characterized by using high resolution electron microscopy (HREM), Raman scattering, x-ray diffraction (XRD), Auger electron spectroscopy (AES), and resonant nucleus reaction (RNR). The results show that as the doping concentration of PH₃ increases, the average grain size (d) tends to decrease and the crystalline volume percentage (X_c) increases simultaneously. For the B-doped samples, as the doping concentration of B₂H\xj{6} increases, no obvious change in the value of d is observed, but the value of X_c is found to decrease. This is especially apparent in the case of heavy B₂H₂ doped samples, where the films change from nanocrystalline to amorphous.     

Improvement of transport properties for polycrystalline silicon prepared by plasma-enhanced chemical vapor deposition

The carrier transport property of polycrystalline silicon (poly-Si:H:F) thin films was studied in relation to film microstructure, impurity, in situ or post-annealing treatments to obtain better carrier transport properties. Poly-Si:H:F films were prepared from SiF₄ and H₂ gas mixtures at temperatures <300 °C. Dark conductivity of the films prepared at high SiF₄/H₂ gas flow ratio (e.g., 60/3 sccm) exhibits a high value for intrinsic silicon and its Fermi level is located near the conduction band edge. The carrier incorporation is suppressed well, either by in situ hydrogen plasma treatment or by post-annealing with high-pressure hot-H₂O vapor. It is confirmed that weak-bonded hydrogen atoms are removed by the hot-H₂O vapor annealing. In addition, evident correlation between impurity concentrations and dark conductivity is not found for these films. It is thought that the carrier incorporation in the films prepared at high SiF₄/H₂ gas flow ratios is related to grain-boundary defects such as weak-bonded hydrogen. By applying hot-H₂O vapor annealing at 310 °C to a 1-μm-thick p-doped (400)-oriented poly-Si:H:F film, Hall mobility was improved from 10 cm²/Vs to 17 cm²/Vs. Received: 7 August 2000 / Accepted: 2 March 2001 / Published online: 20 June 2001     

Modelling and optimization plasma enhanced chemical of film thickness variation for vapour deposition processes

This letter describes a method for modelling film thickness variation across the deposition area within plasma enhanced chemical vapour deposition （PECVD） processes. The model enables identification and optimization of film thickness uniformity. Comparison between theory and experiment is provided for PECVD of diamond-like-carbon （DLC） deposition onto flat and curved substrate geometries. Results show DLC uniformity of 0.30% over a 200-mm flat zone diameter within overall electrode diameter of 300 ram. Use of the modelling method for PECVD using metal-organic chemical vapour deposition （MOCVD） feedstock is demonstrated, specifically for deposition of silica films using metal-organic tetraethoxy-silane.