共查询到17条相似文献,搜索用时 70 毫秒
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介绍了用于两端分子电子器件电性能测试的纳米孔技术、交叉线接触技术、导电原子力显微镜技术、扫描隧道显微镜技术、纳米间距电极技术以及机械可控断裂结技术.结合分子器件的电性能测试要求,对各类测试方法进行了分析评价,并简要指出了分子器件电性能测试研究的发展趋势. 相似文献
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介绍了用于两端分子电子器件电性能测试的纳米孔技术、交叉线接触技术、导电原子力显微镜技术、扫描隧道显微镜技术、纳米间距电极技术以及机械可控断裂结技术.结合分子器件的电性能测试要求,对各类测试方法进行了分析评价,并简要指出了分子器件电性能测试研究的发展趋势。 相似文献
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电流在铁磁金属中可以用来驱动磁畴壁,从而可以进行信息的读写.然而,具体如何在器件中实现并不清楚.文章作者利用纳米加工技术制作出铁磁金属纳米点接触结构和逻辑电路,并对纳米结构中畴壁的输运性质和逻辑电路特性进行了研究.发现了铁磁纳米点接触结构在电流驱动下存在的高阻态及低阻态,通过设计不同形状的点接触结构,用电学测量方法验证了畴壁在自旋极化电流作用下的移动方向与电流方向的关系.并基于电流控制点接触电阻变化的结果,制作出能够实现逻辑“非”功能的全金属逻辑电路,实现了电路的电信号驱动和利用电信号的检测功能. 相似文献
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电场对分子线电子结构的影响 总被引:6,自引:2,他引:4
从第一性原理出发,利用密度泛函理论计算了分子2-氨基-5-硝基-1,4-二乙炔基-4-苯硫醇基苯与金原子团形成的分子线的电子结构,从轨道、能级及吸附电子三个方面讨论了电场对分子线电子结构的影响.该工作将有利于未来纳米电子学器件的设计. 相似文献
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本文报道的束源转动的交叉分子装置有两个互相垂直交叉交可同步绕一固定轴转动的脉冲束源,激光束可沿上述轴线方向与两束交叉。控制器是一四极质谱,它与散射中心的距离可以调节,探测方向固定不变与两个分子在同一平面内并指向散射中心,质谱产生的离子信号用高灵敏度的Daly系统接收。该设备将用于研究分子簇的形成和裂解,分子或分子簇的光解和两分子束的交叉散射过程。用这台设备我们测量子在CO2和NH3超声束中形成的各 相似文献
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本文以4,4’-二巯基联苯分子为研究对象,利用从头计算方法和弹性散射格林函数理论,研究了苯环之间的不同位置取向对分子的电子结构以度该分子结的伏安特性的影响.计算结果表明苯环扭转角不同会改变分子的电子结构。扭转角的增大会导致分子轨道的扩展性变差,从而使体系的导电性能降低. 相似文献
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自旋电子学由于其丰富的物理内涵和广泛的应用前景受到学术界和工业界的高度重视,成为近年来凝聚态物理和信息技术领域关注的焦点。本文介绍了利用磁性金属纳米结构实现作为自旋电子器件基础的自旋注入的方法,特别涉及利用铁磁金属纳米点接触结构钉扎磁畴的特点,研究自旋极化电流与磁畴壁的相互作用规律, 理解纳米结构中畴壁的动力学行为,并以此为基础构筑结构简单、性能优异的全金属磁逻辑电路,从而实现了由电信号驱动,通过电信号检测,并与CMOS技术兼容的目的。 相似文献
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In nature, different environmental factors make organisms to be programmed into different forms. However, it is difficult and significant to realize the field‐programmable logic conversion of sole logic system for molecular logic gates. Here, the concept of pH‐programmable “logic conversion” on the single logic gate based on the peculiar enzyme‐mimicking activity is presented. Inspired by natural enzymes with high pH‐stability and metal ions‐stimulated activity, pH‐independent and metal ions‐controllable catalase mimics (Co3O4 nanozymes) are designed by protein‐directed method. Although pH cannot directly change the activity of nanozymes, pH can change the existence state of metal ions and then the electron transfer rate on nanozymes. So, versatile roles of metal ions for catalase‐like and electrocatalytic activities are discovered on the premise of pH‐independency. For the proof‐of‐concept, OR/INHIBIT‐ and INHIBIT/AND‐switchable logic gates are facilely constructed using pH as the environmental stimulus and metal ions as inputs. Hence, the transformation of logic gate functions is realized without the change of logic gate elements and input molecules. This contribution may not only broaden the species and application area of nanozymes, but also open novel avenues for the molecular logic conversion and the metal ions sensor. 相似文献
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Molecular electronic devices that utilize single molecules or molecular monolayers as active electronic components represent a promising approach in the ongoing miniaturization and integration of electronic devices. Rapid advances in technology have enabled us to engineer molecular electronic devices with diverse functionalities. Significant progress has been made in understanding charge transport in molecular systems at the single-molecule level, and concomitantly, new device concepts have emerged. This review article focuses on experimental aspects of electronic devices made with single molecules or molecular monolayers, with a primary focus on the characterization and manipulation of charge transport. 相似文献
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Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff inevitably constrains the application of graphene for the conventional field-effect transistor (FET) devices in digital applications. However, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics. Aside from high mobility, graphene offers numerous other amazing electrical, optical, thermal, and mechanical properties that continually motivate innovations. 相似文献
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F. -Im. Buchholz D. Balashov M. I. Khabipov D. Hagedorn R. Dolata R. Ppel J. Niemeyer 《Physica C: Superconductivity and its Applications》2001,350(3-4):291-301
At PTB, for application in rapid single flux quantum (RSFQ) and voltage standard circuits, the development of highly integrated SDE circuits is focused on devices based on intrinsically shunted Josephson junctions in the SINIS and SNS technologies. In SINIS technology, the fabrication process has been optimized to values of the critical current density of jC=500 A/cm2 and the characteristic voltage of VC=190 μV. To raise the circuit integration level, successive steps of development are shown by the example of the layout of an elementary RSFQ cell designed for higher values of jC. In SNS technology, a fabrication process has been developed to produce small ramp-type junctions with contact areas smaller than 0.4 μm2 and with values for jC and VC of about jC=200 kA/cm2 and VC=20 μV. The design allows the SNS junction size to be further reduced down to the deep sub-micron range. 相似文献