共查询到19条相似文献,搜索用时 78 毫秒
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利用Z-scan、电流、电压探头,通过测量等离子体吸收功率、天线电流、电压、等离子体直流悬浮电位等多种参数,研究了匹配网络、天线耦合强度、导电地面积、气压等多种因素对E,H放电模式特性及模式转化行为的影响.基于Γ型阻抗匹配网络中串联电容对射频电源输出功率的影响,提出了E—H放电模式转化的正负反馈区概念.研究发现:在相同的其他放电条件下,处于正反馈区时等离子体放电易于产生跳变型模式转化,而且模式跳变的临界天线电流、回滞宽度、跳变临界功率、跳变功率差等参数均随阻抗匹配网络参数产生明显变化;在负反馈区内,模式转化过程趋于连续.由于阻抗匹配网络的影响,E—H模式的跳变电流并不是总大于H—E模式的跳变电流.在不同导电地面积、阻抗匹配网络、气压下,模式转化过程中等离子体直流悬浮电位的变化呈现多样性.
关键词:
射频等离子体
感性耦合
容性耦合
模式转化 相似文献
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罗先文 《核聚变与等离子体物理》2021,41(2):187-192
给出了一种感应耦合等离子体源的设计,用于等离子体中和枪装置.通过实验方法研究等离子体源的电子引出特性,并结合理论分析了等离子体密度随射频功率的变化关系.研究结果表明等离子体源的电子引出特性与放电腔内气压有关联性,E?H模式转换中电子密度的变化与负载的电感值相关.研究成果对等离子体中和枪的发展有重要的参考价值. 相似文献
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基于感应耦合等离子体的变压器模型,分析了感应耦合等离子体的功率耦合效率与线圈配置(几何尺寸、电学参量)及等离子体基本参量(等离子体电子密度、电子-中性粒子有效碰撞频率)之间的关系;然后,改变平板型线圈的匝数从而改变了线圈的几何尺寸、电学参量,并且测量出了不同的线圈所对应的功率耦合效率.实验结果表明,线圈的电感量是能否实现放电的决定性因素;而功率耦合效率则与感应线圈的Q值、放电参量(气压、功率)等密切相关,射频输入功率的增加、放电气压的上升都会导致感应耦合等离子体耦合效率的提高,这与感应耦合等离子体的变压器模型预测结果是符合的. 然而,变压器模型给出的提高线圈Q值可导致耦合效率增强的预测结果仅适用于同等电感量的线圈条件. 本文对于单线圈的感应耦合等离子体源的研究为线圈的优化设计甚至大面积的多线圈感应耦合等离子体源研制提供了理论依据.
关键词:
感应耦合等离子体
功率耦合效率
变压器模型 相似文献
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Spatial variation behaviors of argon inductively coupled plasma during discharge mode transition 下载免费PDF全文
A Langmuir probe and an ICCD are employed to study the discharge mode transition in Ar inductively coupled plasma. Electron density and plasma emission intensity are measured during the E (capacitive discharge) to H (inductive discharge) mode transitions at different pressures. It is found that plasma exists with a low electron density and a weak emission intensity in the E mode, while it has a high electron density and a strong emission intensity in the H mode. Meanwhile, the plasma emission intensity spatial (2D image) profile is symmetrical in the H mode, but the 2D image is an asymmetric profile in the E mode. Moreover, the electron density and emission intensity jump up discontinuously at high pressure, but increase almost continuously at the E to H mode transition under low pressure. 相似文献
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Changes of the electron dynamics in hydrogen (H2) radio-frequency (RF) inductively coupled plasmas are investigated using a hairpin probe and an intensified charged coupled device (ICCD). The electron density, plasma emission intensity, and input current (voltage) are measured during the E to H mode transitions at different pressures. It is found that the electron density, plasma emission intensity, and input current jump up discontinuously, and the input voltage jumps down at the E to H mode transition points. And the threshold power of the E to H mode transition decreases with the increase of the pressure. Moreover, space and phase resolved optical emission spectroscopic measurements reveal that, in the E mode, the RF dynamics is characterized by one dominant excitation per RF cycle, while in the H mode, there are two excitation maxima within one cycle. 相似文献
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A helium (He) inductively coupled plasma (ICP) source combined with two diode laser systems with the wavelengths of 396.5 nm (21S–41P) and 1082.9 nm (23S–23P) was configured to investigate the influence of He metastable states on the E-H mode transition. The population densities of 21S and 23S states were measured by laser absorption spectroscopy as the functions of RF power, He pressure, and the distance from RF antenna. Correlations between the E-H mode transition and the population density ratio of the 23S metastable state to the 21S metastable state as well as the line intensity ratio (LIR) of the 33D-23S transition to the 31P–21S transition were investigated. The E-H mode transition of He ICP was analyzed by the electron impact ionization rate and it was confirmed that the 23S metastable state plays a key role in the E-H mode transition. 相似文献
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通过Langmuir双探针和发射光谱诊断方法,对比研究了驱动频率为13.56 MHz和2 MHz柱状感性耦合等离子体中电子密度和电子温度的径向分布规律.结果表明:在高频和低频放电中,输入功率的增加对等离子体参数产生了不同的影响,高频放电中主要提升了电子密度,低频放电中则主要提升了电子温度.固定气压为10 Pa,分别由高频和低频驱动时,电子密度的径向分布均为"凸型".而电子温度的分布差异比较明显,高频驱动时,电子温度在腔室中心较为平坦,在边缘略有上升;低频驱动时,电子温度随径向距离的增加而逐渐下降.为了进一步分析造成这种差异的原因,在相同放电条件下采集了氩等离子体的发射光谱图,利用分支比法计算了亚稳态粒子的数密度,发现电子温度的径向分布始终与亚稳态粒子的径向分布相反.继续升高气压到100 Pa,发现不论高频还是低频放电,电子密度的径向分布均从"凸型"转变为"马鞍形",较低气压时电子密度的均匀性有了一定的提升,但低频的均匀性更好. 相似文献
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RF electric field penetration and power deposition into nonequilibrium planar-type inductively coupled plasmas 下载免费PDF全文
The RF electric field penetration and the power deposition into
planar-type inductively coupled plasmas in low-pressure discharges
have been studied by means of a self-consistent model which consists
of Maxwell equations combined with the kinetic equation of electrons.
The Maxwell equations are solved based on the expansion of the
Fourier--Bessel series for determining the RF electric field.
Numerical results show the influence of a non-Maxwellian electron
energy distribution on the RF electric field penetration and the
power deposition for different coil currents. Moreover, the
two-dimensional spatial profiles of RF electric field and power
density are also shown for different numbers of RF coil turns. 相似文献
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A one-dimensional fluid model is employed to investigate the discharge sustaining mechanisms in the capacitively coupled argon plasmas, by modulating the driving frequency in the range of 40 kHz-60 MHz. The model incorporates the density and flux balance of electron and ion, electron energy balance, as well as Poisson's equation. In our simulation, the discharge experiences mode transition as the driving frequency increases, from the γ regime in which the discharge is maintained by the secondary electrons emitted from the electrodes under ion bombardment, to the α regime in which sheath oscillation is responsible for most of the electron heating in the discharge sustaining. The electron density and electron temperature at the centre of the discharge, as well as the ion flux on the electrode are figured out as a function of the driving frequency, to confirm the two regimes and transition between them. The effects of gas pressure, secondary electron emission coefficient and applied voltage on the discharge are also discussed. 相似文献