X-ray spectra and electronic structure of boron nitride in different crystallographic modifications

The electronic energy structure of boron nitride with ZnS (c-BN) and wurtzite (w-BN) type crystal lattices is calculated by the local coherent potential (LCPA) method in a multiple scattering approximation. The local partial 2p states of boron with c-BN and w-BN are compared with the boron K emission spectra in the corresponding compounds. Fine structure is first obtained in the region of the top of the valence band. Translated fromZhurnal Struktumoi Khimii, Vol. 39, No. 6, pp. 1083–1087, November–December, 1998.     

Mesoporous graphitic carbon nitride materials: synthesis and modifications

Graphitic carbon nitride (g-C₃N₄), as a kind of polymeric semiconductor that has unique electronic structure and excellent chemical stability, has attracted increasing attention of researchers. Moreover, the raw materials for the preparation of g-C₃N₄ are various and easily accessible. All of these have provided favorable advantages for the fast development of g-C₃N₄. Compared to bulk g-C₃N₄, mesoporous g-C₃N₄ has more prominent natures, such as high specific surface area, large pore volume, and the increased amount of surface active sites. Therefore, great efforts have been devoted to develop mesoporous g-C₃N₄ (MCN). Up to now, many methods have been explored for the synthesis of MCN, such as hard-template method, soft-template method, template-free method, sol–gel method, and so on. Among these methods, the hard template method is used most widely. In this paper, the recent research on the synthesis of MCN was reviewed. In addition, the modifications to the obtained MCN, which lead to performance enhancement of the MCN for better applications, were also summarized.     

Structural and electronic properties of fluorinated boron nitride nanotubes

The effects of F doping on the structural and electronic properties of the (5, 5) single-walled boron nitride nanotube (BNNT) are investigated by using the density functional theory method. The chemiadsorption of F maintains the hexagonal BN network, increases the lattice constant, and introduces acceptor impurity states. On the other hand, substitutional doping of F destroys the hexagonal BN network, decreases the lattice constant, but does not alter the insulating feature of the BNNT. The observed insulator-to-semiconducting transition, a lattice contraction, and a highly disordered atom arrangement in the sidewall of BNNTs upon F doping appear to be most reasonably attributed to a codoping of dominating substitutional F over chemiabsorbed F, which can induce deep donor impurity states, a lattice contraction, and a destruction of the hexagonal BN network simultaneously.     

Formation,structure, and structural properties of a new filamentary tubular form: hollow conical-helix of graphitic boron nitride

A novel tubular form of graphitic boron nitride (BN) displaying a hollow conical-helix was discovered. It was generated via wrapping a single beltlike filament according to the geometry of an Archimedes spiral. Cone apex angles of helical-conical nanotubes (HCNTs) were found to exhibit specific values, each of which refers to a certain coincidence site lattice. A unique structural property of HCNTs was observed, displaying the transformation of apex angles during the annealing process. The observed apex angles were reduced with decreasing annealing temperature, which is in accordance with an estimated HCNT strain energy decrease for a given tubular radius. It is suggested that the curvature and apex angle of a HCNT are determined by a sole dynamic element, that is, enthalpy (DeltaH), whereas the HCNT disclination configuration changes through helical sliding of the filament.     

Electronic structure of octagonal boron nitride nanotubes

The effect of an octagonal lattice configuration on a boron nitride nanotube is explored using first principle calculations. Calculations show that the formational energy of an octagonal boron nitride nanotube (o‐BNNT) is an exothermic reaction. Boron and nitrogen atoms within an o‐BNNT have an average of 2.88 electrons and 9.09 electrons, respectively, indicating ionic‐like bonding. In addition, the electronic structure of the octagonal boron nitride nanotube shows semiconductive properties, while h‐BNNT is reported to be an insulator. Additional o‐BNNTs with varying diameters are calculated where the results suggest that the diameter has an effect on the binding energy and bandgap of the o‐BNNT. The defect sites of the o‐BNNT are reactive against hydrogen where a boron defect is particularly reactive. Thus, this work suggests that physical and chemical properties of a boron nitride nanotube can be tailored and tuned by controlling the lattice configuration of the nanotube.     

Vibrational and electronic properties of single-walled and double-walled boron nitride nanotubes

We calculated IR, nonresonance Raman spectra and vertical electronic transitions of the zigzag single-walled and double-walled boron nitride nanotubes ((0,n)-SWBNNTs and (0,n)@(0,2n)-DWBNNTs). In the low frequency range below 600 cm⁻¹, the calculated Raman spectra of the nanotubes showed that RBMs (radial breathing modes) are strongly diameter-dependent, and in addition the RBMs of the DWBNNTs are blue-shifted reference to their corresponding one in the Raman spectra of the isolated (0,n)-SWBNNTs. In the high frequency range above ∼1200 cm⁻¹, two proximate Raman features with symmetries of the A_1g (∼1355 ± 10 cm⁻¹) and E_2g (∼1330 ± 25 cm⁻¹) first increase in frequency then approach a constant value of ∼1365 and ∼1356 cm⁻¹, respectively, with increasing tubes’ diameter, which is in excellent agreement with experimental observations. The calculated IR spectra exhibited IR features in the range of 1200–1550 cm⁻¹ and in mid-frequency region are consistent with experiments. The calculated dipole allowed singlet–singlet and triplet–triplet electronic transitions suggesting a charge transfer process between the outer- and inner-shells of the DWBNNTs as well as, upon irradiation, the possibility of a system that can undergo internal conversion (IC) and intersystem crossing (ISC) processes, besides the photochemical and other photophysical processes.     

The electronic structure of the boron hydrides

The expansion of topological basis functions for tetrahedral and octahedral boron cage molecules in terms of an explicit atomic orbital basis is considered. A maximum localisation criteria is used to define mixing coefficients. The overlap between face basis functions in the two geometries is 0.79 and only a very crude parameter transferability exists. However, some aspects of the relative molecular orbital energy levels generated with a topological basis appear to be an improvement on those using an atomic orbital basis.

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Zusammenfassung Die Entwicklung topologischer Basisfunktionen nach einer expliziten Basis von Atomorbitalen für käfigförmige, tetraedrische und oktaedrische Moleküle, die Boratome enthalten, wird untersucht. Ein Kriterium maximaler Lokalisierung wird zur Bestimmung der Mischungskoeffizienten verwendet. Die Überlappung zwischen den Basisfunktionen, die zu den Seiten der beiden Geometrien gehören, beträgt 0,79, und es existiert nur eine ungefähre Übertragbarkeit der Parameter. Einige Aspekte der relativen MO-Energiewerte, die mit einer topologischen Basis gewonnen wurden, stellen eine Verbesserung gegenüber der Verwendung einer Atomorbitalbasis dar.

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Résumé Développement des fonctions de base topologiques en termes d'une base explicite d'orbitales atomiques pour des molécules cages de bore tétraédrique et octaédrique. Un critère de localisation maximum est utilisé pour définir les coefficients de mélange. Le recouvrement entre les fonctions de base faciales dans les deux geometries est de 0.79 et la transférabilité des paramètres n'est que très grossière. Cependant, certains aspects relatifs des niveaux d'énergie des orbitales moléculaires engendrées avec une base topologique apparaissent plus satisfaisants que ceux obtenus avec une base d'orbitales atomiques.

     

The electronic structure of the boron hydrides

In parts I and II of this series [1] it has been demonstrated that localized three centre and two centre bonds may be used as basic functions for molecular orbital calculations on closed (cage) and open (basket) boron polyhedral molecules. In the present paper it is shown that the face and edge matrices of this theory are related to incidal and 1 and 2 simplexial matrices in the same way that Hückel matrices in the theory of unsaturated hydrocarbons are related to incidal matrices and 0 and 1 simplexial matrices. The theory is thus a topologically-correct extension of Hückel theory to three dimensions.

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Zusammenfassung In Teil I und II dieser Serie [1] wurde demonstriert, da\ lokalisierte Dreizentren- und Zweizentren-Bindungen als Basisfunktionen für MO-Rechnungen bei geschlossenen (KÄfig) und offenen (Korb) polyhedralen Borwasserstoff-Molekülen benutzt werden können. In der vorliegenden Arbeit wird gezeigt, da\ die OberflÄchen- und Randmatrizen dieser Theorie mit Incidal- sowie 1- und 2-Simplexmatrizen verwandt sind, in derselben Art wie die Hückel-Matrizen in der Theorie der ungesÄttigten Kohlenwasserstoffe mit Incidal-Matrizen sowie 0- und 1-Simplexmatrizen in Beziehung stehen. Die Theorie ist somit eine topologisch korrekte Erweiterung der Hückel-Theorie auf drei Dimensionen.

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Résumé Dans les parties I et II de cette suite d'articles on a démontré que des liaisons localisées à trois et à deux centres peuvent Être employées comme fonctions de base pour des calculs d'orbitales moléculaires sur des molécules polyhédriques boriques fermées («cage») et ouvertes («panier»). Dans cet article on montre que les matrices «faces» et «arÊtes» de cette théorie sont liées aux matrices d'incidence et aux matrices Simplexes 1 et 2 de la mÊme manière que dans la théorie de Hückel la matrice hamiltonienne est reliée aux matrices d'incidence et simplexes 0 et 1. La théorie est donc une extension à trois dimensions, correcte du point de vue topologique, de la méthode de Hückel.

     

Structural characterizations and electronic properties of boron nitride nanotube crystalline bundles

The structural characterizations and electronic properties of aligned armchair single-walled boron nitride nanotube (BNNT) bundles are theoretically investigated. In the spontaneous bundling process, the cylindrical shapes of bundled BNNTs are preserved all along, whereas their diameters expand, then shrink, and return back to the initial dimensions. Owing to the nonuniform distribution of positive and negative charges among BNNTs, the multipole interaction in bundles is completely dependent upon the chirality of each BNNT and the arrangement of bundled BNNTs. The effect of intertube coupling on the dispersions of BNNT bundles is demonstrated. Our systematical simulations might be helpful for the understanding of potential applications of BNNT bundles in the nanometer manufacturing techniques such as doping, adsorption, and derivative synthesis.     

The distribution of electronic charge in the ground state of cubic boron nitride

The distribution of electronic charge in cubic boron nitride is investigated using the bond orbital wave functions recently calculated by Coulson and Doggett. Plots of the one-electron density function, in the (110) plane, are found to be insensitive to the choice of atomic basis functions, in contradistinction to the previously calculated effective atomic charges. A number of structure amplitudes are also calculated for each of the bond orbital wave functions.     

The electronic structure of boron trifluoride

The electronic structure of boron trifluoride has been calculated ab initio by using extended basis sets of Gaussian type atomic orbitals. By variation of the B-F bond length a minimum energy situation was found at 1.306 å (experimental 1.31 å). Calculations on the pyramidal (reorganised) form of the molecule led to a reorganisation energy of 34.2 kcal mole^–1. The localisation energy was found to be 50.4 kcalmole^–1. Both the latter energy and the charge distribution are in good agreement with results from a previous Pariser-Parr-Pople calculation. The calculated quantities are used to discuss the energetics of donor-acceptor complex formation.

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Zusammenfassung Die Elektronenstruktur des BF₃-Moleküls wird mit Hilfe einer ab initio Rechnung unter Verwendung einer erweiterten GTO-Funktionsbasis ermittelt. Die Variation der Energie bezüglich des B-F-Bindungsabstandes führt zu einem Energieminimum für einen B-F-Abstand von 1,306 å in guter übereinstimmung mit dem Experiment (1,31 å). Dabei erweist sich das planare BF₃-Molekül gegenüber dem pyramidalen um 34,2 Kcal/Mol stabiler. Die -Elektronen-Lokalisierungsenergie betrÄgt 50,4 Kcal/Mol. Bezüglich dieser Energie sowie der -Elektronenladungsverteilung ergibt sich gute übereinstimmung mit den Resultaten vorangegangener PPP-Rechnungen. Die berechneten Grö\en werden zur Diskussion der VorgÄnge in Donor-Akzeptor-Komplexen herangezogen.

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Résumé Calcul ab initio de la structure électronique due trifluorure de Bore en base étendue d'orbitales atomiques Gaussiennes. La variation des longueurs des liaisons BF donne un minimum à 1.306 å (valeur expérimentale 1.31 å). Les calculs de la forme pyramidale (réorganisée) de la molécule donnent une énergie de réorganisation de 34.2 kcal/mole. L'énergie de localisation vaut 50.4 kcal/mole. Cette dernière valeur, et la distribution de la charge sont en bon accord avec les résultats d'un calcul antérieur dans le approximations de Pariser-Parr-Pople. Les quantités calculées sont utilisées dans une discussion des caractéristiques énergétiques de la formation de complexes donneur-accepteur.

     

DFT study on the structural and electronic properties of Pt-doped boron nitride nanotubes

First-principles calculations based on density functional theory were carried out to investigate the structural and electronic properties of Pt substitution-doped boron nitride (BN) nanotubes. The electronic and structural properties were studied for substituted Pt in the boron and the nitrogen sites of the (BN) nanotube. The band gap significantly diminishes to 2.095 eV for Pt doping at the B site while the band gap diminishes to 2.231 eV for Pt doping at the N site. The band density increases in both the valence band and the conduction band after doping. The effects of the hardness and softness group 17 (halogen elements) were calculated by density functional theory (DFT).     

Nonempirical calculations of the electronic properties of new boron nitride graphyne-like nanotubes

The nonempirical density-functional tight-binding approach to band structure calculations was used to study the structural and electronic properties of new boron nitride graphyne-like nanotubes (α-BN-NT) constructed on the basis of the atomic motif of α-graphyne. All α-BN tubes were semiconductors with gap widths of 3.8–4.2 eV. The electron energy characteristics of zigzag and armchair α-BN-NTs are discussed in comparison with the known boron nitride graphite-like nanotubes. In addition, the special features of interatomic interactions in α-BN are analyzed using the nonempirical discrete variational method of density functional theory.     

Geometry and electronic structure of rhombohedral C60 polymer

Geometry and electronic structure of the rhombohedral C₆₀ polymer are studied by means of density-functional theory (DFT) within the local-density-approximation (LDA). It is found that stacking sequence proposed by Chen et al. is more stable than the original model by Núñez-Regueiro et al., although the energy difference between the two is very small. The material is a semiconductor with the LDA gap of 0.68 eV. Conduction bands show dependence on the way of stacking, and density of states has a sharp peak at the conduction bottom. Bond lengths are also calculated and found to be in good agreement with the results of the X-ray structure analysis.     

Determination of boron and nitrogen in boron nitride

Improved techniques are described for the determination of boron and nitrogen in pure boron nitride. Controlled fusion of boron nitride with sodium carbonate in a muffle furnace is followed by a potentiometric titration of the boric acid. A special quartz vessel is described for the determination of nitrogen. The boron nitride is fused with sodium hydroxide and the resulting ammonia is swept into a receiver and titrated with standard hydrochloric acid. Boron and nitrogen values with their standard deviation are given for a typical pure boron nitride.     

The electronic structure of tetrahedral III–V compounds: The ground state of boron nitride

The bond-orbital theory of III–V compounds, previously described by Coulson, Redei and Stocker, is used to calculate the effective atomic charges and the binding energy per bond in boron nitride. The theory is reformulated in a manner which is convenient for performing both ab initio and semiempirical calculations. Two different choices for the atomic-orbital exponents are considered and, in both cases, the results obtained from the ab initio method are at variance with the earlier calculations in predicting an electronic charge displacement from nitrogen to boron. The magnitude of the effective charges is found to vary according to the method of partitioning the overlap charge between the nitrogen and boron atoms. The use of orthogonalized Slater 2s functions is also examined. The semiempirical calculations are performed with an explicit inclusion of the Madelung energy from the outset. The ionicity in the bond is shown to be determined by the competition between the difference in orbital electronegativities and the difference in Madelung potential across the ends of the bond. Unfortunately, the semiempirical theory breaks down because the energy per bond passes through a maximum at the optimum value of the polarity parameter. The reasons for this behaviour are examined and discussed.