The role of the covalent interaction in the formation of the electronic structure of Au- and Cu-intercalated graphene on Ni(111)

A study is reported of the role played by covalent interaction in the coupling of graphene formed on Ni(111) to the Ni substrate and after intercalation of Au and Cu monolayers underneath the graphene. Covalent interaction of the graphene π states with d states of the underlying metal (Ni, Au, Cu) has been shown to bring about noticeable distortion of the dispersion relations of the graphene electronic π states in the region of crossing with d states, which can be described in terms of avoided-crossing effects and formation of bonding and antibonding d-π states. The overall graphene coupling to a substrate is mediated by the energy and occupation of the hybridized states involved. Because graphene formed directly on the Ni(111) surface has only bonding-type occupied states, the coupling to the substrate is very strong. Interaction with intercalated Au and Cu layers makes occupation of states of the antibonding and bonding types comparable, which translates into a weak resultant overall coupling of graphene to the substrate. As a result, after intercalation of Au atoms, the electronic structure becomes similar to that of quasi-free-standing graphene, with linear dispersion of π states at the K point of the Brillouin zone and the Dirac point localized close to the Fermi level. Intercalation of Cu atoms under the graphene monolayer results, besides generation of covalent interaction, in a slight charge transport, with a partial occupation of the previously unoccupied π* states and the Dirac point shifted by 0.35 eV toward increasing binding energy.     

On the charge transfer in the “single-sheet graphene-intercalated metal layer-SiC substrate” system

The proposed scheme for the consideration of charge transfer in the three-layer Gr/Me/SiC system (where Gr is a single-sheet graphene, Me is an intercalated metal layer, and SiC is a substrate) contains three stages. At the first stage, a metal monolayer adsorbed on silicon carbide is considered and the charge of adatoms in this monolayer is calculated. At the second stage, the shift of the Dirac point of free-standing single-layer graphene in an electrostatic field induced by charged adatoms of the monolayer is estimated. At the third stage, a weak interaction between Me/SiC and free-standing graphene is included, which allows electrons to tunnel but does not significantly distort the density of states of free-standing graphene. Estimations are performed for n- and p-type 6H-SiC(0001) substrates and Cu, Ag, and Au layers. The charge state of the graphene sheet and the shift of the Dirac point with respect to the Fermi level of the system are calculated. A comparison with the available experimental and theoretical results shows that the proposed scheme works quite satisfactorily.     

Modification of induced spin-orbit splitting of the π states of graphene during the joint intercalation of Bi and noble metals

The effect of intercalation of Bi atoms and the joint intercalation of atoms of Bi and noble metals (Au, Cu) on the spin and electron structure of graphene formed on Ni(111) is investigated by angle and spin-resolved PES. It is shown that the spin-orbit splitting of π states of graphene of 20–30 meV is observed for the joint intercalation of Bi and Au.     

Formation of a quasi-free-standing graphene with a band gap at the dirac point by Pb atoms intercalation under graphene on Re(0001)

The control of the graphene electronic structure is one of the most important problems in modern condensed matter physics. The graphene monolayer synthesized on the Re(0001) surface and then subjected to the intercalation of Pb atoms is studied by angle-resolved photoelectron spectroscopy and low-energy electron diffraction. The intercalation of Pb atoms under graphene takes place when the substrate is annealed above 500°C. As a result of the intercalation of Pb atoms, graphene becomes quasi-free-standing and a local band gap appears at the Dirac point. The band gap changes with the substrate temperature during the formation of the graphene/Pb/Re(0001) system. The band gap is 0.3 eV at an annealing temperature of 620°C and it increases up to 0.4 eV upon annealing at 830°C. Based on our data, we conclude that the band gap is mainly caused by the hybridization of the graphene π state with the rhenium 5d states located near the Dirac point of the graphene π state.     

Transport properties of graphene/metal planar junction

The transport properties of graphene/metal (Cu(111), Al(111), Ag(111), and Au(111)) planar junction are investigated using the first-principles nonequilibrium Green's function method. The planar junction induce second transmission minimum (TM2) below the Fermi level due to the existence of the Dirac point of clamped graphene. Interestingly, no matter the graphene is p- or n-type doped by the metal substrate, the TM2 always locates below the Fermi level. We find that the position of the TM2 is not only determined by the doping effect of metal lead on the graphene, but also influenced by the electrostatic potential of the metal substrate and the work function difference between the clamped and suspended graphene.     

Intercalation of graphite and hexagonal boron nitride by lithium

Although graphite and hexagonal form of BN (h-BN) are isoelectronic and have very similar lattice structures, it has been very difficult to intercalate h-BN while there are hundreds of intercalation compounds of graphite. We have done a comparative first principles investigation of lithium intercalation of graphite and hexagonal boron nitride to provide clues for the difficulty of h-BN intercalation. In particular lattice structure, cohesive energy, formation enthalpy, charge transfer and electronic structure of both intercalation compounds are calculated in the density functional theory framework with local density approximation to the exchange-correlation energy. The calculated formation enthalpy of the considered forms of Li intercalated h-BN is found to be positive which rules out h-BN intercalation without externally supplied energy. Also, the Li(BN)₃ form of Li-intercalated h-BN is found to have a large electronic density of states at the Fermi level and an interlayer state that crosses Fermi level at the zone center; these properties make it an interesting material to investigate the role of interlayer states in the superconductivity of alkali intercalated layered structures. The most pronounced change in the charge distribution of the intercalated compounds is found to be charge transfer from the planar σ states to the π states.     

Electrical conductance at initial stage in epitaxial growth of Pb, Ag, Au and In on modified Si(1 1 1) surface

The electronic properties of thin metallic films of Pb, Ag, Au and In atoms deposited at 105 K on well defined metallic surface, i.e. Si(1 1 1)-(6 × 6)Au surface with 10 ML of annealed Pb, were investigated using four-point probe method in UHV condition. The structure of the substrate and deposited metals were monitored by the RHEED system. The electrical conductance, measured during the deposition of In and Pb atoms, shows the local minimum for the coverage equals about 0.3 ML whereas for Au and Ag atoms the conductance decreases during the first monolayer growth. For Au atoms the local maximum in the conductance was observed for the coverage about 0.55 ML, which can be connected with localized states. To describe theoretically the conductance behavior the tight-binding Hamiltonian and equation of motion for the Green’s function were used and good qualitative agreement was obtained.     

Electron scattering in the monolayer graphene with a band-asymmetric annular potential well

Electron scattering in the monolayer graphene has been considered within the framework of our model of short-range defects proposed earlier. Electronic properties are determined by the Dirac equation for the two-component spinor wave function. Perturbation is modeled by the annular well with a band-asymmetric potential. Band-asymmetry of the potential stems from the local structure defect and leads to the mass (gap) perturbation in the Dirac equation. Transitions between the K and K’ critical points in the Brillouin zone are neglected, which is valid provided that the short-range perturbation has a finite radius. Exact explicit formulas for the scattering matrix have been derived. Results are presented in terms of the scattering phases and in the geometrical form of a relation between some 2-vectors. The characteristic equation for the bound and resonance states has been obtained in the form of an orthogonality condition. An approximate calculation of observables in terms of the scattering theory results is outlined.     

Ab initio study of the (2 × 2) phase of barium on graphene

We present a first-principles density functional theory study on the structural, electronic and dynamical properties of a novel barium doped graphene phase. Low energy electron diffraction of barium doped graphene presents clear evidence of (2 × 2) spots induced by barium adatoms with BaC₈ stoichiometry. First principles calculations reveals that the phase is thermodynamically stable but unstable to segregation towards the competitive BaC₆ monolayer phase. The calculation of phonon spectrum confirms the dynamical stability of the BaC₈ phase indicating its metastability, probably stabilized by doping and strain conditions due to the substrate. Barium induces a relevant doping of the graphene π states and new barium-derived hole Fermi surface at the M-point of the (2 × 2) Brillouin zone. In view of possible superconducting phase induced by foreign dopants in graphene, we studied the electron–phonon coupling of this novel (2 × 2) obtaining λ = 0.26, which excludes the stabilization of a superconducting phase.     

Electronic structure,topological phase transitions and superconductivity in (K,Cs)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Fe<Subscript>2</Subscript>Se<Subscript>2</Subscript>

We present LDA band structure of novel hole doped high temperature superconductors (T _c ∼ 30 K) K _x Fe₂Se₂ and Cs _x Fe₂Se₂ and compare it with previously studied electronic structure of isostructural FeAs superconductor BaFe₂As₂ (Ba122). We show that stoichiometric KFe₂Se₂ and CsFe₂Se₂ have rather different Fermi surfaces as compared with Ba122. However at about 60% of hole doping Fermi surfaces of novel materials closely resemble those of Ba122. In between these dopings we observe a number of topological Fermi surface transitions near the Γ point in the Brillouin zone. Superconducting transition temperature T _c of new systems is apparently governed by the value of the total density of states (DOS) at the Fermi level.     

Deplacements du niveau de Fermi de composes d'insertion sodium-pyrocarbone-bore

The Fermi level of pyrolytic carbons is displaced through boron doping and intercalation and de-intercalation of sodium. Diamagnetic anisotropy and Hall effect measurements show that, whatever the initial doping level, the intercalation of sodium proceeds until the Fermi level is raised about 3 eV above the Brillouin zone corner. The average ionization of sodium atoms is estimated at 0.2−0.4 electronic charge. As theoretically predicted the diamagnetic anisotropy is maximum when the Fermi level is at the Brillouin zone corner.     

The K * Kπ and ρππ couplings in QCD

The light cone QCD sum rules are derived for the K ^* Kπ coupling g _K ^* Kπ and the ρππ coupling g _ρππ. The contribution from the excited states and the continuum is subtracted cleanly through the double Borel transform with respect to the two external momenta, p ₁ ², p ₂ ²= (p−q)². Our result g _K ^* Kπ= (8.7 ± 0.5) and g _ρππ= (11.5 ± 0.8) is in good agreement with the experimental value. Received: 31 July 1998 / Revised version: 20 November 1998     

On different mechanisms of electron-phonon scattering of electron and hole excitations on an Ag(110) surface

We present the results of a detailed theoretical study of the electron-phonon scattering of electron and hole excitations in the unoccupied and occupied surface states on an Ag(110) surface. We show that the electron-phonon coupling parameter λ in the unoccupied surface state is approximately three times smaller than that in the occupied one, because the scattering of these states is determined by different phonon modes. The difference in the phonon-induced decay mechanisms of electron and hole excitations is determined by different spatial localizations of the unoccupied and occupied surface states at the $ \overline Y $ \overline Y point of the two-dimensional Brillouin zone.     

Quasi-particle spectrum and density of electronic states in AA- and AB-stacked bilayer graphene

The present work deals with the analysis of the quasi-particle spectrum and the density of states of monolayer and bilayer (AB- and AA-stacked) graphene. The tight binding Hamiltonian containing nearest-neighbor and next-nearest neighbor hopping and onsite Coulomb interaction within two triangular sub-lattice approach for monolayer graphene, along-with the interlayer coupling parameter for bilayer graphene has been employed. The expressions of quasi-particle energies and the density of states (DOS) are obtained within mean-field Green’s function equations of motion approach. It is found that next-nearest-neighbour intralayer hopping introduce asymmetry in the electronic states above and below the zero point energy in monolayer and bilayer (AA- and AB-stacked) graphene. The behavior of electronic states in monolayer and bilayer graphene is different and highly influenced by interlayer coupling and Coulomb interaction. It has been pointed out that the interlayer coupling splits the quasi-particle peak in density of states while the Coulomb interaction suppresses the bilayer splitting and generates a gap at Fermi level in both AA- and AB-stacked bilayer graphene. The theoretically obtained quasi-particle energies and density of states in monolayer and bilayer (AA- and AB-stacked) graphene has been viewed in terms of recent ARPES and STM data on these systems.     

Thin noble metal films on Si (111) investigated by optical second-harmonic generation and photoemission

Thin noble metal films (Ag, Au and Cu) on Si (111) have been investigated by optical second-harmonic generation (SHG) in combination with synchrotron radiation photoemission spectroscopy. The valence band spectra of Ag films show a quantization of the sp-band in the 4-eV energy range from the Fermi level down to the onset of the d-bands. For Cu and Au the corresponding energy range is much narrower and quantization effects are less visible. Quantization effects in SHG are observed as oscillations in the signal as a function of film thickness. The oscillations are strongest for Ag and less pronounced for Cu, in agreement with valence band photoemission spectra. In the case of Au, a reacted layer floating on top of the Au film masks the observation of quantum well levels by photoemission. However, SHG shows a well-developed quantization of levels in the Au film below the reacted layer. For Ag films, the relation between film thickness and photon energy of the SHG resonances indicates different types of resonances, some of which involve both quantum well and substrate states. Received: 16 October 2001 / Revised version: 14 March 2002 / Published online: 29 May 2002     

Quantum-well states in bilayers of Ag and Au on W(1 1 0)

sp-Like quantum-well states (QWS) in thin monocrystalline bilayer films of Ag and Au on W(1 1 0) and of single Ag films were studied by angle-resolved photoemission. We find that the propagation of the electronic states in the bilayer films along [1 1 1] depends on the energy relative to the band edge of Au metal at the L point of the Brillouin zone. In particular, QWS with binding energies less than this band-edge energy (1.1 eV) are strongly confined to the Ag layer, while for higher binding energies the QWS extend across the whole bilayer film. This clearly demonstrates the weakness of the potential barrier at the Ag/Au interface in the context of QWS formation at energies where electronic states exist in both metals.     

Doping graphene with metal contacts

Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au, and Pt, while preserving its unique electronic structure, can still shift the Fermi level with respect to the conical point by approximately 0.5 eV. At equilibrium separations, the crossover from p-type to n-type doping occurs for a metal work function of approximately 5.4 eV, a value much larger than the graphene work function of 4.5 eV. The numerical results for the Fermi level shift in graphene are described very well by a simple analytical model which characterizes the metal solely in terms of its work function, greatly extending their applicability.     

Fermi gap stabilization of an incommensurate two-dimensional superstructure

The compressed, incommensurate approximately (9.5 x 9.5) moire superstructure of the Ag monolayer on Cu(111) displays a filled surface state band with a Fermi energy gap at the Brillouin zone boundary. By contrast, the surface band is gapless for the less compressed, commensurate (9 x 9) moire of two Ag layers. A simple estimate of the energy gain rendered by opening this gap gives a value similar to the elastic energy change required to modify the commensurate structure, thereby suggesting that the approximately (9.5 x 9.5) incommensurate phase is stabilized by such a gap opening. The possible presence of a charge density wave state is discussed.     

Origin of spin-orbit splitting for monolayers of au and ag on w(110) and mo(110)

Spin-orbit coupling can give rise to spin-split electronic states without a ferromagnet or an external magnetic field. We create large spin-orbit splittings in a Au and Ag monolayer on W(110) and show that the size of the splitting does not depend on the atomic number of the Au or Ag overlayer but of the W substrate. Spin- and angle-resolved photoemission and Fermi-surface scans reveal that the overlayer states acquire spin polarization through spin-dependent overlayer-substrate hybridization.     

Highly-angle-resolved ultraviolet photoelectron spectroscopy of C8Cs

Highly-angle-resolved ultraviolet photoelectron spectroscopy was carried out for a C₈Cs single crystal to study the electronic charge transfer in alkali metal graphite intercalation compounds. The dispersive π¹-band at the K̃ point in the Brillouin zone was observed for the first time. The electron occupation in the π¹-band was estimated to be 0.45±0.05 unit electronic charge. This strongly suggests that a substantial part of an interlayer band exists below the Fermi level at the γ point, forming a spherical Fermi surface on the center of the Brillouin zone.