Rotational study and hyperfine effects of the (0,0) band of the B2Σ-X2Σ system of ScS

Rotational analysis of the (0,0) band of the B²Σ-X²Σ transition of ScS is reported. Spectrographic illustration of a hyperfine coupling transition in the ground state is demonstrated for the first time. This enables an order of magnitude to be obtained for γ″ (～0.003 cm^?1). The results for the other constants were: X state: B″ = 0.1971 cm^?1, D″ = 5 × 10^?8cm^?1, 4b = 0.23 cm^?1 (equal to that for ScO within the limits of measurement uncertainty); B state: B′ = 0.1853 cm^?1, D′ = 6 × 10^?8cm^?1, γ′ = ?0.0594 cm^?1, which can be compared with p_A²Π = 0.060 cm^?1. It was found that the two excited states A²Π and B²Σ constitute an excellent example of pure precession (p_pp = 0.058 cm^?1, and this enables the vibrational levels of A²Π to be numbered.     

Absorption spectra of C6H6 and C6D6 near 340 nm

The absorption spectra of C₆H₆ and C₆D₆ in the liquid phase have been studied near 340 nm. The absorption spectrophotometric mounting was a sequential double-beam attachment with linear response to energy on scanning of the spectrum before the exit slit and an electronic device which gives directly either the absorbance or the integrated absorbance of a transition and, consequently, its oscillator strength.The oscillator strength measured for the band of C₆H₆ is 8×10^?8, which corresponds to a dipole moment of 2.4×10^?3 Debye; this value is of the same order as a theoretical value calculated by Tsubomura and Mulliken (3.8×10^?3 Debye) for a transition between states ³F and ³A of an oxygen-benzene pair. This agreement corroborates the hypothetical existence of such a transition.The first vibrational band is at 28553 cm^?1 for C₆H₆; this band is not observed in the vapor or solid phase. It corresponds probably to the transition 0-0, which is considered in the literature to be near 29500 cm^?1. The isotopic shift measured for this first band is 164 cm^?1. The vibrational frequencies are, respectively, 910 cm^?1 for C₆H₆ and 889 cm^?1 for C₆D₆.     

Determination of A0 for CH335Cl and CH337Cl from the ν4 infrared and Raman bands

The ν₄ infrared and Raman bands of CH₃Cl were analyzed simultaneously. A direct fit yielded a complete set of constants for CH₃³⁵Cl, including A₀ = 5.20530 ± 0.00010 cm^?1 and D_K = (8.85 ± 0.13) × 10^?5cm^?1. For CH₃³⁷Cl an incomplete set of constants was obtained from the infrared band, and A₀ = 5.2182 ± 0.0010 cm^?1 was estimated by curve fitting of the Raman spectrum. The resulting equilibrium structure is $\text{r(}\text{CH) = 1.0854 ± 0.0005}\text{A}\text{?}$, $\text{r(}\text{CCl) = 1.7760 ± 0.0003}\text{A}\text{?}$, and <(HCH) = 110°.35 ± 0°.05.     

Lithium aluminum nitride,Li3AlN2 as a lithium solid electrolyte

Single phase of Li₃AlN₂ was prepared from the mixture of Li₃N/AlN = 1.2 to 1.5 in molar ratio at 700°C and at 900°C. It crystalizes in the cubic system derived from antifluorite-type structure having the lattice parameter $\text{a = 9.470}\text{A}\text{?}$. It is a pure ionic conductor having conductivity of 5 × 10^?8ω^?1cm^?1 at room temperature and an activation energy of 52 kJ/ mol. Its decomposition voltage was 0.85 V at 104°C. The TiS₂/Li₃AlN₂/Li cell could be discharged at a constant current of 45 μA/cm² at 104°C.     

Electrical conduction mechanism and carrier trapping in β-metal free phthalocyanine single crystals

The dark electrical conductivity of β-metal free phthalocyanine single crystals has been investigated over the temperature range 273–600°K, at a reduced pressure of 10^?7 torr. The results obtained are in accordance with the model proposed by Barbe and Westgate[5] for this material, in which the energy gap between the top of the valence band and the bottom of the conduction band is determined to be 2·00 eV. At temperatures below about 410°K, the conduction process is consistent with the presence of an electron trapping level located 0·32 eV below the conduction band edge, with a density of 7×10¹⁶ cm^?3, and a donor level of density 2×10⁷ cm^?3 at the same energy. Above about 410°K, there is evidence to suggest that the conduction process is intrinsic.     

Inverse Raman spectrum of the ν1-fundamental of CF4

We have obtained fully resolved spectra of the ν₁ (Q-branch) band of CF₄ at a pressure of 4 Torr using a variation of stimulated Raman spectroscopy. With an experimental resolution of ≤0.004 cm^?1, no detectable tensor splitting of the rotational levels exists up to J = 55. The spectrum is readily fit with a band origin α = 909.0720 cm^?1 and a single rotational term β ? β₀ = ?3.417 × 10^?1cm^?1. We have also observed an underlying hot band, which we tentatively assign as the ν₁ + ν₂ ← ν₂ transition, with α′ = 909.1997 cm^?1 and (β ? β₀)′ = ?3.405 × 10^?4cm^?1.     

Ethane spectrum between 1940 and 2152 cm−1: Ground state parameters

The absorption spectrum of ethane was recorded between 1940 and 2152 cm^?1 at a resolution of 0.025 cm^?1. Ground state parameters were determined from the principal band in this region, ν₉ + ν₁₂(E_u): B₀ = 0.6630353 cm^?1, D₀^J = 1.0406 × 10^?6 cm^?1, D₀^JK = 2.575 × 10^?6 cm^?1 (standard errors are 7, 8, and 13, respectively, in the last digits quoted). The quoted values are from the analyses of 269 ground state combination differences, the standard deviation of the least-squares analysis was 0.0032 cm^?1.     

12C16O18O: Analysis of rovibrational transitions Ov′2v3 → Ov′2(v3 − 1) (v2 = 0 and 1) observed in high-resolution emission spectra in the 4.5-μm region

Emission spectra of six isotopic species of CO₂ excited by dc discharge were recorded under Doppler limited resolution using the Fourier transform spectrometer of the Laboratoire d'Infrarouge in the 4.5-μm region. In this paper, the results concerning ¹²C¹⁶O¹⁸O are given. The band centers and the spectroscopic constants for 19 levels involved in vibrational transitions Δv₃ = 1 are reported. They reproduce 853 experimental wavenumbers with a RMS of the order of 2 × 10^?5 cm^?1 for the best vibrational transition, less than 1 × 10^?4 cm^?1 for most of the others. From experimental wavenumbers, to determine molecular parameters, it is shown that it is impossible to include in the same fit all the transitions Σ-Σ until v₃ = 10 using a polynomial representation of the rovibrational energy, the responsible phenomenon being the small Fermi resonance which occurs on Σ levels. Nevertheless, the 321 wavenumbers belonging to the first four vibrational transitions are satisfactorily reproduced by the model.     

Iodine as a donor in CdS

Iodine doped single crystals of CdS were grown from the vapor phase. High temperature Hall effect measurements for the crystals equilibrated with Cd and S₂ vapors at temperatures between 700 and 1000°C gave the free electron concentration as a function of p_Cd or p_S2 and temperature. The results can be explained on the basis of a model in which the CdS is saturated with iodine at low p_Cd (=high p_S2) but unsaturated at high p_Cd.The solubility of iodine in CdS is given by c_t=1·73×10²²p_S2^?1/8 exp (?1·045 eV/kT) cm^?3 atm^?1/8=4·62×10¹⁹p_Cd^1/4 exp (?0·195 eV/kT) cm^?3 atm^1/4The formation of pairs (I_SV_Cd)′ from I_S^· and V_Cd″ is governed by the equilibrium constant K_{P(I, V)}=4 exp (≤1·1 eV/kT)If Cd diffusion occurs primarily by free vacancies, the Cd^* tracer self diffusion leads to a vacancy mobility of (1·2±0·5)×10^?5 cm² sec^?1 at 900°C, in agreement with results reported by Woodbury [12], but (7±3) times larger than reported by Kumar and Kroger [10].     

Characterization of silicon doped with sodium upon high-voltage implantation

The depth distribution profiles of sodium atoms in silicon upon high-voltage implantation (ion energy, 300 keV; implantation dose, 5 × 10¹⁴ and 3 × 10¹⁵ cm ^?2) are investigated before and after annealing at temperatures in the range T _ann = 300–900°C (t _ann = 30 min). Ion implantation is performed with the use of a high-resistivity p-Si (ρ= 3–5 kΩ cm) grown by floating-zone melting. After implantation, the depth distribution profiles are characterized by an intense tail attributed to the incorporation of sodium atoms into channels upon their scattering from displaced silicon atoms. At an implantation dose of 3 × 10¹⁵ ions/cm², which is higher than the amorphization threshold of silicon, a segregation peak is observed on the left slope of the diffusion profile in the vicinity of the maximum after annealing at a temperature T _ann = 600°C. At an implantation dose of 5 × 10¹⁴ ions/cm², which is insufficient for silicon amorphization, no similar peak is observed. Annealing at a temperature T _ann = 700°C leads to a shift of the profile toward the surface of the sample. Annealing performed at temperatures T _ann ≥ 800°C results in a considerable loss of sodium atoms due to their diffusion toward the surface of the sample and subsequent evaporation. After annealing, only a small number of implanted atoms that are located far from the region of the most severe damages remain electrically active. It is demonstrated that, owing to the larger distance between the diffusion source and the surface of the sample, the superficial density of electrically active atoms in the diffusion layer upon high-voltage implantation of sodium ions is almost one order of magnitude higher than the corresponding density observed upon low-voltage implantation (50–70 keV). In this case, the volume concentration of donors near the surface of the sample increases by a factor of 5–10. The measured values of the effective diffusion parameters of sodium at annealing temperatures in the range T _ann = 525–900°C are as follows: D ₀ = 0.018 cm²/s and E _a = 1.29 eV/kT. These parameters are almost identical to those previously obtained in the case of low-voltage implantation.     

Small-angle neutron scattering studies on the structure of radiation defects in neutron-irradiated synthetic quartz

The supra-atomic structure of single crystals of synthetic quartz with a dislocation density of 54 cm^?2 in their initial state and after irradiation in a VVR-M reactor by fast neutrons with the energy, E _n > 0.1 MeV, at fluences of 2.3 × 10¹⁹ and 4.5 × 10¹⁹ N/cm², has been studied by the method of small-angle thermal neutron scattering. It has been established that fast neutrons create point, linear, and bulk defects throughout the entire material. It has been shown that extended defects have a significant integral length per volume unit equal to ??3 × 10¹¹ cm/cm³, and can form a consolidated network in the sample with a cell size of ??30 nm, through the channels of which the migration of impurity atoms and molecules is possible.     

Magnetic annealing and crystallization kinetics of the metallic glass Fe5Co70Si15B10

Magnetic annealing and crystallization kinetics of amorphous ribbons of Fe₅Co₇₀Si₁₅B₁₀ were studied. For a toroid stress-relieved at 365°C for 2 h, the anistropy energy K_u obtained by cooling in a magnetic field from 300°C was ≈1.1 × 10³erg/cm³ at room temperature. The reorientation of induced anisotropy of this toroid followed the equation for first-order kinetics closely, yielding an activation energy ΔE = 1.9 eV and a pre-exponential frequency factor v₀ = 3.2 × 10¹³s^-1. Anisotropy reorientation in a toroid partially stress-relieved at 220°C, although was clearly reversible during 8 cycles of isothermal annealing in tranverse and in longitudinal field, exhibited significant deviations from the equation for first order kinetics. Treating the data in terms of the equation for first order kinetics, a narrow spectrum of activation energy from 1.2 to 1.8 eV, with corresponding frequency factors from 1.8 × 10⁸ s^-1 to 5.6 × 10¹² s^-1, was obtained. The difference in behavior between the two samples is discussed in the light of concepts in structural relaxation recently proposed by T. Egami. Crystallization kinetics was studied on a DSC apparatus, using Kissinger's method. At 10 K/min heating rate, the temperature of incipient crystallization was found to be 770 K. The activation energies found were in the range 4.8–4.2 eV.     

Ionic conductivity of Zr1−xIn2xO2−x

As x in Zr(In)O_2?x is increased from 0.08 to 0.16 (9–19 mole per cent In₂O₃) the activation energy E(x) for ionic conduction increases from 1.05 to 1.51 eV; the concuctivity decreases from 2 × 10^?5 to 3 × 10^?6Ω^?1cm^?1at 400°C, is composition-independent at about 580°C, and increases from 1 × 10^?2 to 4 × 10^?2Ω^?1cm^?1 at 800°C. The pre-exponential term of the Boltzmann-type conductivity equation depends exponentially on E(x), a much stronger dependence on x than theoretically expected with a model for ionic conductivity that includes nearest-neighbor defect interactions. Analysis of reported conductivity data for Zr(M)O_2?x (M = Sc, Y, Ca and rare earth metals) and other doped oxide electrolytes with fluorite-type structure reveals that the same relationship is observed with these materials when x γ0.08. It is shown that ionic conduction in these oxides is consistent with nearest neighbor vacancy-cation defect interaction forx < 0.08 but that an additional complex interaction with composition-dependent free energy ΔG(x) occurs when xγ 0.08.The lattice constant of Zr(In)O_2?x with the cubic fluorite-type structure is independent of composition, 5.114 ± 0.002 Å, in agreement with ionic size considerations.     

Deep levels in gallium arsenide by capacitance methods

The three capacitance methods, i.e., TSCAP, PHCAP, and transient capacitance measurements, are applied to determine electronic properties of deep levels inn-GaAs. In the boat-grown wafer detected are the 0.30 eV electron trap withN _T =3.6×10¹⁶ cm^?3 andS _n =2.4×10^?15 cm², and the 0.75 eV electron trap withN _T =2.0×10¹⁶ cm^?3 andS _n =1.2×10^?14 cm². In the epitaxial wafer, the 0.45 eV hole trap is detected withN _T >1.5×10¹³ cm^?3 andS _p =1.4×10^?14 cm² as well as the 0.75 eV electron trap withN _T =2.4×10¹³ cm^?3.     

A high-resolution study of the 14.4-μm infrared band of deuterofluoroform

The FT-IR spectrum of the ν₃ parallel band of deuterofluoroform has been recorded at a resolution of 0.0045 cm^?1. Nine independent spectral parameters were determined which reproduce some 650 observed wavenumbers with a standard error of 3 × 10^?4 cm^?1. The constants derived for the ν₃ band are (in cm^?1): ν₀ = 694.2822(3); B₀ = 0.3309321(9); B₃ = 0.3302464(11); α^B = 6.859(10) × 10^?4; α^C = 1.429 × 10^?4; D₃^J = 3.168(3) × 10^?7; D₀^J = 3.188(3) × 10^?7; D_JK³ = 4.766 × 10^?7; D_JK⁰ = 4.864 × 10^?7; and D_K⁰ ? D_K³ = 2 × 10^?10.     

Measurement of the ortho-para transition rate in the pμp molecule and deduction of the pseudoscalar coupling constant gpμ

The ortho-para transition rate in the pμp molecule has been found experimentally to be λ_OP = (4.1 ± 1.4) × 10⁴ s^?1. Our recent result for the muon capture rate in liquid hydrogen can now be interpreted to extract the ortho-molecular capture rate: λ_OM = (531 ± 33) s^?1. A deduction of the pseudoscalar coupling constant g_p^μ is presented: we find g_p^μ = 8.7 ± 1.9.     

Diffusion of titanium in slightly reduced rutile

The self-diffusion of ⁴⁴Ti in slightly reduced rutile. TiO_2?δ, was measured along the c axis over the temperature range of 1000–1100°C between 0.2 and 1 × 10^?18atm. oxygen pressure. These measurements enabled the determination of the defect structure of TiO_2-δ for 0.02 ?gd ? 0.001. For oxygen pressures between 1 × 10^?13 and 1 × 10^?16atm. at 1058.4°C random tetravalent titanium atoms are the predominant defects evident from self-diffusion. The enthalpy of motion was determined as ΔH_m = 57.03 ± 4.9% kcal/mole. From the activation energy at 1.69 × 10^?16atm., the enthalpy of formation for tetravalent titanium interstitials was determined as ΔH_f = 276 ± 15.6% kcal/mole.For oxygen pressures less than 1 × 10^?16atm. at 1058.4°C, the tracer diffusion coefficient shows a continuous decline as the oxygen pressure is lowered. Comparisons with thermogravimetric studies and consideration of the similarity in structure between nonstoichiometric point defect phases and the first homologous series phase indicate that the order-disorder transition retains a considerable degree of short range order below the critical concentration in the form of Wadsley defects.     

Analysis of the spin splitting of maxima of quantum oscillations of the resistivity of n-Bi-Sb semiconductor alloys in a magnetic field parallel to the bisector axis

In samples of semiconductor alloys n-Bi_0.93Sb_0.07 with different electron concentrations (n ₁ = 8 × 10¹⁵ cm^?3, n ₂ = 1.2 × 10¹⁷ cm^?3, and n ₃ = 1.9 × 10¹⁸ cm^?3), dependences of the electrical resistivity on magnetic fields up to 45 T parallel to the current and the bisector axis (H ‖ C ₁ ‖ j) have been measured at temperatures of 1.5, 4.5, and 10 K. The obtained dependences ρ₂₂(H) demonstrate quantum oscillations of the resistivity (Shubnikov-de Haas effect), and, in high magnetic fields, there is a resistivity maximum far away from other maxima. On assumption that this maximum is related to the spin-split Landau level N = 0^? for electrons of the main ellipsoid, the spin-splitting parameters are calculated for electrons of the main ellipsoid: γ₁ = 0.87, γ₂ = 0.8, and γ₃ = 0.73. Using these values, the oscillation maxima can be reliably related to the numbers of split Landau levels for electrons of the main and secondary ellipsoids. The dependences of the resistivity ρ₁₁ and the Hall coefficient R _31.2 on magnetic field have been measured in a transverse magnetic field at H ‖ C ₁ and j ‖ C ₂ on the sample with the electron concentration n ₄ = 1.4 × 10¹⁷ cm^?3. Using similar analysis, the spin-splitting parameter is found to be γ₄ = 0.85, which is close to the value of γ₂ = 0.8 obtained for the sample with close electron concentration (n ₂ = 1.2 × 10¹⁷ cm^?3) during the measurements in a longitudinal magnetic field. The quantum oscillation maxima of Hall coefficient R _31.2 are shifted to the range of high magnetic fields as compared to the quantum oscillation maxima of resistivity ρ₁₁.     

Specific heat of NaNO2 near its transition points

Using an a.c. technique, the specific heat of NaNO₂ was measured as a function of temperature near its antiferroelectric-to-paraelectric phase transition point (T_N). The transition was found to be of the second order. The critical exponents are; α = 0·38 for ? = 2 × 10^?4 ～ 1 × 10^?1, and α′ = 0·18 for ? = ?2 × 10^?4 ～ ?3 × 10^?3. The critical exponents deduced from the scaling-law relations are roughly close to the values obtained from a random phase approximation for a system with an isotropic interaction. However, a difference was recognized between the observed exponent for the specific heat and the values theoretically given for T > T_N by the random phase approximation for a system with a short-range interaction or for a system with a long-range dipolar interaction. A thermodynamical analysis was made by using the generalized Pippard relation, and the present result was found to be consistent with the pressure dependence of the antiferroelectric transition point.     

Shubnikov-de haas effect in n-CdSnAs2

Shubnikov-de Haas oscillations in the transverse magnetoresistance of single-crystalline n-type CdSnAs₂ have been recorded at temperatures between 2 and 25 K in magnetic fields up to 5T. The electron concentration of the samples ranged from 2 × 10¹⁷ to 2 × 10¹⁸ cm^?3. The angular dependences of the oscillation periods and cyclotron effective masses showed that the conduction band exhibits an energy dependent anisotropy, obeying the Kildal band structure model. For the low-temperature values of the band parameters we found: a band gap E_g = 0.30 eV, a spin-orbit splitting Δ = 0.50 eV, a crystal field splitting parameter δ = ?0.09 eV, and an interband matrix element P = 8.5 × 10^?8eV cm. This simple four-level model was found to be not adequate to describe quantitatively the observed electronic effective g-factor for a sample with low electron concentration.