Galvanomagnetic effects in semiconductors of finite dimensions with nonideal current contacts

A theory of the transverse and longitudinal galvanomagnetic effects is constructed in the linear weak-field approximation for asymmetrical current contacts with finite conductivity in a direction perpendicular to the plane of the contact.Namanganskii Industrial-Technological Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 30–33, March, 1993.     

Frequency plasma opening switches and their application in the technology of high-power accelerators

The main results reported here were obtained in a cycle of studies on plasma opening switches (POSs) and their application in frequency-pulse accelerators; those studies were carried out at the Russian Research Center, Kurchatov Institute from 1986 to 1997. That research was the basis for the development of frequency-pulse generators based on POS technology for quasi-constant generation of an electron beam and bremsstrahlung radiation. Several generators have been built for use in commercial radiation processing technologies. We give the parameters and basic circuit designs and discuss the prospects for further development of generators using POSs. The competitiveness in comparison with existing accelerating systems is examined. Thermonuclear Institute, Russian Research Center, Kurchatov Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 47–55, December, 1997.     

不同顺序中子/γ辐照对双极器件电流增益的影响

利用CFBR-Ⅱ快中子反应堆（中国第二座快中子脉冲堆）和⁶⁰Co装置开展不同顺序的中子/γ辐照双极晶体管的实验。在集电极-发射极电压恒定条件下,测量了双极晶体管电流增益随集电极电流的变化曲线,研究不同顺序中子/γ辐照对双极晶体管电流增益的影响。分析实验结果发现,集电极-发射极电压一定时,集电极电流极低情况下电流增益退化比较大,随集电极电流增加电流增益逐渐减小;就实验选中的两类晶体管而言,先中子后γ辐照造成双极晶体管电流增益的退化程度大于先γ后中子辐照,而且PNP型晶体管比NPN型晶体管差异更明显。本文进行了双极晶体管电离/位移协同辐照效应相关机理的初步探讨。     

Momentary interruption of current passing through zero in subnanosecond high-pressure gas-discharge switches

Data are reported for the performance of subnanosecond high-pressure gas-discharge switches aimed at generating high-voltage bipolar voltage pulses with a width of less than 1 ns, an amplitude of up to 200 kV, and a repetition rate of 100 Hz. Pulse formers, in which the polarity of the current passing through the switch does not change in the course of switching, seem to be the most appropriate. When the current changes sign, passing through zero, the effect of its momentary interruption is observed. The explanation of this effect is that, when the voltage across the gap reverses, a certain time interval is necessary for a cathode layer to form, which can transmit a high discharge current at a low voltage drop across the layer.     

The possibility of using a low-tritium-content D-T mixture compressed with a high-power current pulse

The possibility of the propagation of a thermonuclear detonation wave in a deuterium pinch with a small (∼0.5%) tritium admixture is considered. The required pinch parameters and the necessary value of the current produced by a high-power pulsed current generator are estimated.     

电流源负载峰值电流控制buck变换器的复杂次谐波振荡现象

电流源负载峰值电流控制buck变换器具有次谐波振荡快慢复杂现象.本文建立了它的分段光滑开关模型及离散迭代映射模型.根据离散迭代映射模型,通过数值仿真研究了电路参数对buck变换器的非线性动力学行为的影响,发现了具有快慢效应次谐波振荡吸引域的分岔图和呈现双环带状的庞加莱映射.根据分段光滑开关模型,采用龙格-库塔算法,仿真研究了buck变换器的时域波形和相轨图,研究结果表明:电感电流存在由次谐波振荡与降频次谐波振荡组成的n型次谐波振荡现象;输出电压存在快标与慢标结合的正弦次谐波振荡现象.实验结果验证了文中的分 关键词： 开关DC-DC变换器 迭代映射 电流源负载 次谐波振荡     

Physical processes of current gain in InAs bipolar junction transistors

InAs bipolar junction transistors (BJTs), grown by molecular beam epitaxy, are reported with common emitter current gains (β's) as large as 400. The factors affecting the common emitter current gain have been studied by estimating the magnitudes of the base transport factor (α_T) and emitter injection efficiency (γ). This has been accomplished by studying a sequence of InAs BJTs with varying emitter doping densities, N_E. Minority carrier diffusion length in the base (L_B), α_T, and γ have been extracted from measured electrical characteristics. The results of the study of these InAs BJTs are as follows: L_B≈0.4 μm, α_T≈98% and γ ranges from 92% to nearly 100% depending on N_E. This knowledge of the magnitudes of the injection efficiencies suggests when it would be useful to move from the simple BJT structure to the more advanced heterojunction bipolar transistor (HBT) structure. Lower γ BJTs would be improved, however high-γ BJTs would benefit little, by the use of the widegap emitters of HBTs. The method developed here to estimate γ, α_T and L_B is not specific to InAs BJTs, but should be useful for study of BJTs and HBTs in any material system.     

两子系统在周期切换连接下的振荡行为及其机理

研究了两非线性系统在周期切换连接下的分岔和混沌行为.通过局部分析,分别给出了两子系统参数空间诸如Fold分岔、Hopf分岔等临界条件,进而考虑两子系统存在不同稳态解时通过周期切换连接下的复合系统的分岔特性,给出了不同的周期振荡行为,并揭示了其相应的产生机理.指出系统轨迹可以由切换点分割成不同的部分,分别受两子系统的控制,而随参数的变化,切换点数目成倍增加,导致系统由倍周期分岔序列进入混沌.同时,在其演化过程中,虽然子系统定性保持不变,但由于切换导致的非光滑性,复合系统不仅仅表现为两子系统动力特性的简单连接,而是会产生各种分岔,导致诸如混沌等复杂振荡行为.     

Comparison of performance between bipolar and unipolar double-frequency sinusoidal pulse width modulation in a digitally controlled H-bridge inverter system

By deriving the discrete-time models of a digitally controlled H-bridge inverter system modulated by bipolar sinu- soidal pulse width modulation （BSPWM） and unipolar double-frequency sinusoidal pulse width modulation （UDFSPWM） respectively, the performances of the two modulation strategies are analyzed in detail. The circuit parameters, used in this paper, are fixed. When the systems, modulated by BSPWM and UDFSPWM, have the same switching frequency, the stabil- ity boundaries of the two systems are the same. However, when the equivalent switching frequencies of the two systems are the same, the BSPWM modulated system is more stable than the UDFSPWM modulated system. In addition, a convenient method of establishing the discrete-time model of piecewise smooth system is presented. Finally, the analytical results are confirmed by circuit simulations and experimental measurements.     

光栅不理想特性对不同调制码型的光传输系统的影响

分析了光纤光栅不理想特性的产生机理，对以啁啾光纤光栅为色散补偿器的10Gb/s光传输系统中，啁啾光纤光栅的不理想特性包括群时延纹波、反射纹波及光栅通带带宽对采用归零码(RZ)、非归零码(NRZ)以及载波抑制归零码(CSRZ)三种调制格式传输系统性能的影响进行了详细的数值分析和比较. 同时进行了基于光纤光栅色散补偿的1500km无误码传输实验，通过对啁啾光纤光栅由于不理想特性的差别而导致对实际传输系统不同信道性能影响的比较，进一步验证了仿真分析的正确性. 关键词： 光传输 啁啾光纤光栅 不理想特性 调制码型     

Effect of structure doping profile on the current switching-off process in power semiconductor opening switches

Using a physicomathematical model, the process of current breaking in power semiconductor opening switches was investigated in p ⁺-p-n-n ⁺ structures with different doping profiles. The model takes account of the actual doping profile of a structure, diffusion and drift of current carriers in a strong electric field, recombination via deep impurities and Auger recombination, and impact ionization in a dense plasma. The calculation of the electrical circuit of an opening switch is based on solution of Kirchhoff’s equations. It has been shown that in the nanosecond regime of breaking superhigh current densities with densities of the interrupted currents from a few to tens of kA/cm², the dominant factor in the current breaking process is the width of the p-region in the initial doping profile of a structure. An increase in the p-region width from 100 to 200 μm makes the velocity of the excess plasma front propagating in the p-region in the reverse pumping stage higher by a factor of 5–7. Higher propagation velocity of the plasma front makes the current breaking process more intensive, which is manifested in the shorter current breaking time and higher overvoltage across the opening switch.     

Dynamical behaviors of a system with switches between the Rssler oscillator and Chua circuits

The behaviors of a system that alternates between the R¨ossler oscillator and Chua＇s circuit is investigated to explore the influence of the switches on the dynamical evolution.Switches related to the state variables are introduced,upon which a typical switching dynamical model is established.Bifurcation sets of the subsystems are derived via analysis of the related equilibrium points,which divide the parameters into several regions corresponding to different types of attractors.The dynamics behave typically in period orbits with the variation of the parameters.The focus/cycle periodic switching phenomenon is explored in detail to present the mechanism of the movement.The period-doubling bifurcation to chaos can be observed via the doubling increase of the turning points related to the switches.Furthermore,period-decreasing sequences have been obtained,which can be explained by the variation of the eigenvalues associated with the equilibrium points of the subsystems.     

Effect of net carriers at the interconnection layer in tandem organic solar cells

Tandem cell with structure of indium tin oxide (ITO)/molybdenum oxide (MoO₃)/fullerene (C60)/copper phthalocyanine (CuPc)/C60/tris-8-hydroxy-quinolinato aluminum (Alq₃)/Al was fabricated to study the effect of net carriers at the interconnection layer. The open circuit voltage and short circuit current were found to be 1.15 V and 0.56 mA/cm², respectively. Almost the same performance (1.05 V, 0.58 mA/cm²     

Spin polarized current controlled dynamics of domain walls in magnetic films with in-plane anisotropy

We study the dynamic properties of asymmetric vortex Bloch walls and classical 1D Néel walls controlled by a spin-polarized current in magnetic films with in-plane anisotropy. It is shown that fairly high velocities of domain walls (up to 100 m/s) can be obtained for the current density in the range j = 10⁶–10⁸ A/cm². The nonlinear dependence of the wall velocity on the film thickness and the linear dependence of the velocity on the current density and inverse damping parameter are found.     

双极性流对低阻抗器件的影响

 分析讨论了双极性流对平面二极管发射电流的影响,并利用PIC程序对平面二极管中的双极性流问题进行了数值对比。在此基础上模拟研究了具有径向发射特点的低阻抗高功率微波器件MILO中的双极性流问题。结果表明：双极性流的出现使器件偏离最佳工作点,使输出功率和效率降低,电压越高,器件偏离最佳工作点就会越远,当电压高到一定值以后会使器件的工作点移至B-H曲线以下,器件处于过绝缘状态,不能正常工作。     

Investigation of the parameters of a high-power picosecond feedback controlled chirp pulsed amplified Nd: glass laser with injection seeding

We describe experimental studies to investigate the parameters of a compact high-power Nd: glass laser. The laser consists of a mode-locked oscillator with negative feedback (=1.4ps), a Q-switched pre-amplifier with an amplification factor of 5×10⁸, and multiple stage amplifiers using a chirped pulse amplification compression technique.     

Dynamics and stabilization of peak current-mode controlled buck converter with constant current load

The discrete iterative map model of peak current-mode controlled buck converter with constant current load(CCL),containing the output voltage feedback and ramp compensation, is established in this paper. Based on this model the complex dynamics of this converter is investigated by analyzing bifurcation diagrams and the Lyapunov exponent spectrum. The effects of ramp compensation and output voltage feedback on the stability of the converter are investigated. Experimental results verify the simulation and theoretical analysis. The stability boundary and chaos boundary are obtained under the theoretical conditions of period-doubling bifurcation and border collision. It is found that there are four operation regions in the peak current-mode controlled buck converter with CCL due to period-doubling bifurcation and border-collision bifurcation. Research results indicate that ramp compensation can extend the stable operation range and transfer the operating mode, and output voltage feedback can eventually eliminate the coexisting fast-slow scale instability.     

斜坡补偿电流模式控制开关变换器的动力学建模与分析

降压型、升压型和升压-降压型DC-DC变换器是应用广泛的基本开关DC-DC变换器.电流模式控制开关DC-DC变换器在较宽的电路参数范围内具有两个边界,基于开关切换前后电感电流的上升和下降斜率,建立了斜坡补偿电流模式控制开关DC-DC变换器的统一模型.该模型进行无量纲归一化处理后只有三个参数,可有效展示开关DC-DC变换器在电感电流连续传导模式(CCM)和电感电流不连续传导模式(DCM)时的动力学特性.利用此模型,导出了轨道状态发生转移时的两个分界线方程,由此确定了开关DC-DC变换器的稳定周期1域、CCM鲁棒混沌域和DCM弱混沌强阵发域三个工作状态区域.开关DC-DC变换器二维参数映射图和电流模式控制降压型DC-DC变换器的电路实验观察验证了由两条分界线划分工作状态域的正确性.     

Oscillations in collector current of a double heterostructure bipolar transistor: a quantum effect

In spite of many advantages, GaInP/GaAs/GaInP double heterostructure bipolar transistors (DHBT) suffer from the disadvantage of energy barrier to flow of carriers at the collector-base junction due to non-zero conduction band edge discontinuity which results in higher V_D,sat. To circumvent this critical problem, Liu et al. IEEE Transactions on Electron Devices, 40 , 1384-1389 (1993) have employed a set-back layer of undoped GaAs between the base and the collector. As a consequence of the set-back layer, they observed oscillations in the collector current in the forward active mode with the output voltage (V_BC), the origin of which they proposed to be the presence and absence of resonant energy levels at the energy equal to the conduction band edge, E_c, of the base. In this work, we have investigated the origin and conditions of these oscillations theoretically. Energy band balance was performed at the base-set-back layer and set-back layer-collector junctions to determine the distribution of the output voltage, V_BC, at these junctions using degenerate statistics. This calculation also provided the electric field and potential drop on the set-back layer. The parabolic E_c profiles of the base and collector depletion layers were linearized. The transmission coefficient as a function of energy was obtained using Airy and exponential function solutions to Schrödinger equation. The transmission coefficient was energy averaged for various V_BCS and thus, a transmission parameter for the collector-base junction was obtained and used in a DC I-V characteristics model. Theoretical results are in excellent agreement with the experimental results with the V_BCS at which the peaks of the collector current occurs matching closely for the first two peaks.