The light-enhanced NO2 sensing properties of porous silicon gas sensors at room temperature

The NO2 gas sensing behavior of porous silicon（PS） is studied at room temperature with and without ultraviolet（UV） light radiation.The PS layer is fabricated by electrochemical etching in an HF-based solution on a p ＋-type silicon substrate.Then,Pt electrodes are deposited on the surface of the PS to obtain the PS gas sensor.The NO2 sensing properties of the PS with different porosities are investigated under UV light radiation at room temperature.The measurement results show that the PS gas sensor has a much higher response sensitivity and faster response-recovery characteristics than NO2 under the illumination.The sensitivity of the PS sample with the largest porosity to 1 ppm NO2 is 9.9 with UV light radiation,while it is 2.4 without UV light radiation.We find that the ability to absorb UV light is enhanced with the increase in porosity.The PS sample with the highest porosity has a larger change than the other samples.Therefore,the effect of UV radiation on the NO2 sensing properties of PS is closely related to the porosity.     

Synthesis and room-temperature NO_2 gas sensing properties of a WO_3 nanowires/porous silicon hybrid structure

We report on the fabrication and performance of a room-temperature NO2 gas sensor based on a WO3 nanowires/porous silicon hybrid structure. The W18O49 nanowires are synthesized directly from a sputtered tungsten film on a porous silicon （PS） layer under heating in an argon atmosphere. After a carefully controlled annealing treatment, WO3 nanowires are obtained on the PS layer without losing the morphology. The morphology, phase structure, and crystallinity of the nanowires are investigated by using field emission scanning electron microscopy （FESEM）, X-ray diffractometer （XRD）, and high-resolution transmission electron microscopy （HRTEM）. Comparative gas sensing results indicate that the sensor based on the WO3 nanowires exhibits a much higher sensitivity than that based on the PS and pure WO3 nanowires in detecting NO2 gas at room temperature. The mechanism of the WO3 nanowires/PS hybrid structure in the NO2 sensing is explained in detail.     

Investigations on Pd:SnO2/porous silicon structures for sensing LPG and NO2 gas

P-type porous silicon (PS) structure has been prepared by anodic electrochemical etching process under optimized conditions. Photoluminescence studies of the PS structure show emission at longer wavelengths (red) for the excitation at 365 nm. Scanning electron microscope investigations of the PS surface confirm the formation of uniform porous structure, and the pore diameter have been estimated as 25 μm. Pd:SnO₂/PS/p-Si heterojunction with top gold ohmic contact developed by conventional methods has been used as the sensor device. Sensing properties of the device towards liquefied petroleum gas (LPG) and NO₂ gas have been investigated in an indigenously developed sensor test rig. The response and recovery characteristics of the sensor device at different operating temperatures show short response time for LPG. From the studies, maximum sensitivity and optimum operating temperature of the device towards LPG and NO₂ gas sensing has been estimated as 69% at 180 °C and 52% at 220 °C, respectively. The developed sensor device shows a short response time of 25 and 57 s for sensing LPG and NO₂ gases, respectively. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006.     

Room temperature NO_2 gas sensing of Au-loaded tungsten oxide nanowires/porous silicon hybrid structure

In this work, we report an enhanced nitrogen dioxide(NO_2) gas sensor based on tungsten oxide(WO_3)nanowires/porous silicon(PS) decorated with gold(Au) nanoparticles. Au-loaded WO_3 nanowires with diameters of 10 nm–25 nm and lengths of 300 nm–500 nm are fabricated by the sputtering method on a porous silicon substrate. The high-resolution transmission electron microscopy(HRTEM) micrographs show that Au nanoparticles are uniformly distributed on the surfaces of WO_3 nanowires. The effect of the Au nanoparticles on the NO_2-sensing performance of WO_3 nanowires/porous silicon is investigated over a low concentration range of 0.2 ppm–5 ppm of NO_2 at room temperature(25℃). It is found that the 10-? Au-loaded WO_3 nanowires/porous silicon-based sensor possesses the highest gas response characteristic. The underlying mechanism of the enhanced sensing properties of the Au-loaded WO_3 nanowires/porous silicon is also discussed.     

基于银纳米线电极-rGO敏感材料的柔性NO2气体传感器

使用银纳米线作为材料制备柔性叉指电极,用还原氧化石墨烯(reduced graphene oxide, rGO)作为气体敏感材料制备出柔性气体传感器,并研究其对二氧化氮气体的响应特性以及柔韧性能.实验结果表明,制备的以银纳米线作为电极的r GO气体传感器可以实现室温下对浓度为5-50 ppm (1 ppm=10^–6)的NO2气体的检测,对50 ppm的NO2的响应能够达到1.19,传感器的重复性较好,恢复率能够保持在76%以上,传感器的灵敏度是0.00281 ppm^-1,对浓度为5 ppm的NO2气体的响应时间是990 s,恢复时间是1566 s.此外,传感器在0°-45°的弯曲角度下仍表现出优异的电学特性与气体传感性能,所制备的器件具有相对稳定的导电性和较好的弯曲耐受性.     

制备多孔硅的一种新方法

自从Canham观察到多孔硅(PS)的可见光致发光后,由于其可望成为可与Ⅲ—Ⅴ族半导体材料相媲美的新型光电子材料而引起了科学界极大的兴趣.目前,制备多孔硅一般都采用电化学腐蚀方法.     

Sensor properties of structures with porous silicon layer

We have measured at room temperature current-voltage and noise characteristics of structures with a porous silicon (porosity 80%) layer at adsorption of gases ammonia, propane and butane mixture, and ethyl alcohol vapor. It was obtained that the largest change in CVC and low-frequency noise is observed under action of ammonia gas on the structure. Physical reasons of sensor properties of studied samples are discussed.     

UV-LED Photo-activated Chemical Gas Sensors: A Review

Metal oxide semiconductor gas sensors operating under UV irradiation have been validated for detection of variety of chemicals in wide ranges of concentrations at room temperature. This article reviews recent advances in UV-activated metal oxide gas sensors in general and outlines the operating principles and sensing performance of UV-LED based sensors in particular. The sensing properties of several metal oxide semiconductors such as ZnO, TiO₂, SnO₂, In₂O₃, and metal oxide composites under UV-LED irradiation are individually presented and their advantages and shortcomings toward various gases are compared. Moreover, it is demonstrated that for the UV-LED based gas sensors, the performance can be improved by optimizing the sensor platform design and UV source parameters such as wavelength and power intensity. Further, it is illustrated that the gas sensing selectivity can be tuned by modifying the semiconductor layer structure or adjusting appropriate wavelength to an optimal value.     

单根Sb掺杂ZnO微米线非平衡电桥式气敏传感器的制作与性能

通过使用化学气相沉积法,成功制备出超长、大尺寸的Sb掺杂ZnO微米线.基于非平衡电桥原理,利用单根Sb掺杂ZnO微米线作为非平衡电桥的一个桥臂,制作出了可以在室温环境下工作的气敏传感器原型器件.结果表明:室温下测得该传感器对20,50,100和200 ppm(1 ppm=10^-6)不同浓度的丙酮及乙醇气体的响应-恢复曲线均呈现为矩形形状,在空气及被测气体中均有稳定的电流值,并随着探测气体浓度的增大,器件的响应值也在逐渐增加.此外,还发现器件对丙酮气体具有更好的选择性,当丙酮气体浓度为200 ppm时,该传感器的响应时间为0.2 s,恢复时间为0.3 s,响应度高达243%.通过与普通电导式气敏传感器对比发现,采用这种非平衡电桥结构传感器可以明显地提高响应度,使响应和恢复时间更快.此外,还研究了器件的气体探测机理.     

10BaF₂:NaF,Na₃AlF₆/TiO₂ composite as a novel visible-light-driven photocatalyst based on upconversion emission

A rare-earth free upconversion luminescent material, 10BaF 2 :NaF, Na 3 AlF 6 , is synthesized by a hydrothermal method. The study of fluorescent spectrum indicates that it can convert visible light (550 nm–610 nm) into ultraviolet light (290 nm–350 nm), and two emission peaks at 304 nm and 324 nm are observed under the excitation of 583 nm at room temperature. Subsequently, 10BaF 2 :NaF, Na 3 AlF 6 /TiO 2 composite photocatalyst is prepared and its catalytic activity is evaluated by the photocatalytic reduction of CO 2 under visible light irradiation (λ > 515 nm). The results show that 10BaF 2 :NaF, Na 3 AlF 6 /TiO 2 is a more effective photocatalyst for CO 2 reduction than pure TiO 2 , their corresponding methanol yields are 179 and 0 μmol/g-cat under the same conditions. Additionally, the mechanism of photocatalytic reduction of CO 2 on 10BaF 2 :NaF, Na 3 AlF 6 /TiO 2 is proposed.     

Improved multiferroic properties of La-doped 0.6BiFeO₃-0.4SrTiO₃ solid solution ceramics

The 0.6(Bi1-xLax)FeO 3-0.4SrTiO 3(x = 0,0.1) multiferroic ceramics are prepared by a modified Pechini method to study the effect of substitution of SrTiO3 and La in BiFeO3.The X-ray diffraction patterns confirm the single phase characteristics of all the compositions each with a rhombohedral structure.The magnetic properties of the ceramics are significantly improved by a solid solution with SrTiO3 and substitution of La.The values of the dielectric constant ε r and loss tangent tan δ of all the samples decrease with increasing frequency and become constant at room temperature.The La-doped 0.6BiFeO3-0.4SrTiO3 ceramics exhibit improved dielectric and ferroelectric properties,with higher dielectric constant enhanced remnant polarization(Pr) and lower leakage current at room temperature.Compared with a anti-ferromagnetic BiFeO3 compound,the 0.6(Bi0.9La0.1)FeO3-0.4SrTiO3 sample shows the optimal ferromagnetism with remnant magnetization M r ～ 0.135 emμ/g and ferroelectricity with Pr ～ 5.94 μC/cm 2 at room temperature.     

基于光纤粗锥型马赫-曾德尔干涉仪的高灵敏度温度传感器的研制

光纤传感是现代光纤技术的重要应用之一。制作了一种基于两个单模光纤粗锥串接的全光纤型马赫-曾德尔高温高灵敏温度传感器。纤芯中传输的光通过第一个光纤锥耦合, 一部分进入纤芯传输,另一部分进入包层形成包层模,纤芯模和包层模具有不同的有效折射率,经过干涉臂的传输产生了光程差。纤芯和包层传输的光再经过第二个光纤锥耦合,形成干涉进入输出光纤传输。对不同长度的传感器进行实验研究,得出传感臂长度与干涉周期之间的关系。研究了传感器温度响应特性,给出了温度响应灵敏度。实验结果表明,在30～400 ℃温度范围内,长度为35 mm的传感器可以得到较高的温度响应灵敏度,其响应灵敏度为0.115 nm·℃-1。利用傅里叶变换对传感器透射谱进行了分析,可以确定在长度为35 mm的传感器中仅有基模LP₀₁和高阶模LP₀₈两种模式,透射谱就是由这两种模式干涉形成的。该传感器体积小、精度高、抗电磁干扰,具有易于制作、对比度大、质轻、灵敏度高、耐高温等优点。可用于高温气体温度测量及油气井测井等领域的高灵敏度温度传感测量。     

Room-temperature gas sensors based on gallium nitride nanoparticles

Room-temperature sensing characteristics for H₂, ethanol, NH₃, H₂S and water have been investigated with thick-film sensors based on GaN nanoparticles, prepared by a simple chemical route. In general, GaN nanoparticles exhibit satisfactory sensor properties for these gases and vapors even at room temperature. The sensitivity for ethanol is found to be highest, the sensitivity and recovery times being smallest. Gas sensor properties of GaN seem to be related to intrinsic defects, which act as sorption sites for the gas molecules.     

溅射气氛和退火方式对硅纳米晶的形成及发光特性的影响

利用磁控溅射技术溅射硅靶,通过调节溅射气氛在硅衬底上生长了SiO/SiO₂超晶格,热退火处理后超晶格中的SiO发生相分离得到硅纳米晶。通过比较不同退火方式对于硅纳米晶的形成的影响发现,管式炉退火处理的样品给出非常强的室温光致发光,其发光峰的峰位随着硅纳米晶尺寸的增大而红移,且管式炉退火比快速热退火更有利于硅纳米晶的形成。     

氧化钨纳米线-单壁碳纳米管复合型气敏元件的室温NO2敏感性能与机理

利用溶剂热法合成了一维的氧化钨纳米线, 通过掺入适量单壁碳纳米管(SWNT)制备了基于氧化钨纳米线-SWNT 复合结构的室温气敏元件并评价了其对NO₂气体的室温敏感性能. 利用X射线与扫描电子显微镜表征了材料的微结构, 结果表明, 合成的氧化钨纳米线具有单斜的W₁₈O₄₉结构, 复合材料中SWNT被包埋在氧化钨纳米线中间. 气敏性能测试结果表明, 氧化钨纳米线-SWNT复合结构气敏元件在室温下对NO₂气体表现出了高的灵敏度和超快的响应特性; 较低的SWNT掺入量对获得好的气敏性能有利. 分析了基于复合结构材料气敏元件的可能的气敏机理, 认为元件良好的室温敏感性能与SWNT掺入在复合结构材料中引入大量的贯穿气孔和p-n异质结有关.     

The effect of UV irradiation on nanocrysatlline zinc oxide thin films related to gas sensing characteristics

The effect of ultraviolet (UV) light irradiation on the nanocrystalline ZnO thin films was investigated. The degree of crystallinity, electrical conductivity, optical properties and surface properties of ZnO thin films were measured as a function of UV irradiation time. It was found that the degree of crystallinity and electrical properties of ZnO films were affected by UV irradiation, however, no noticeable change in the surface morphology was observed. The gas sensing properties of as-deposited and UV irradiated films were also measured. It was observed that the gas sensing properties were affected by the UV irradiation. The irradiation time less than 5 min has improved the sensor while the irradiation time more than 5 min degraded the sensor characteristics for a UV power density of 2.45 W cm⁻².     

Preparation and room temperature NO_2-sensing performances of porous silicon/V_2O_5nanorods

In this paper, porous silicon/V₂O₅ nanorod composites are prepared by a heating process of as-sputtered V film on porous silicon (PS) at 600 ℃ for different times (15, 30, and 45 min) in air. The morphologies and crystal structures of the samples are investigated by field emission scanning electron microscope (FESEM), x-ray diffractometer (XRD), x-ray photoelectron spectroscopy (XPS), and Raman spectrum (RS). An improved understanding of the growth process of V₂O₅ nanorods on PS is presented. The gas sensing properties of samples are measured for NO₂ gas of 0.25 ppm～3 ppm at 25 ℃. We investigate the effects of the annealing time on the NO₂-sensing performances of the samples. The sample obtained at 600 ℃ for 30 min exhibits a very strong response and fast response-recovery rate to ppm level NO₂, indicating a p-type semiconducting behavior. The XPS analysis reveals that the heating process for 30 min produces the biggest number of oxygen vacancies in the nanorods, which is highly beneficial to gas sensing. The significant NO₂ sensing performance of the sample obtained at 600 ℃ for 30 min probably is due to the strong amplification effect of the heterojunction between PS and V₂O₅ and a large number of oxygen vacancies in the nanorods.     

Electrical behaviors of ZnO/graphene/Si and ZnO/graphene/PS composite structures obtained by spraying different volumes of graphene solution

In this paper, a novel ZnO/graphene/porous silicon hybrid device is fabricated and its electrical behaviors are studied along with a ZnO/graphene/silicon device. Graphene (G) is prepared by exfoliation of graphite foil in aqueous solution of inorganic salt. Porous silicon (PS) is fabricated by electrochemical etching of p-type silicon (Si). Graphene is deposited on the surface of Si and PS substrates by thermal spray pyrolysis method. ZnO rods are grown on the samples by using catalyst-free chemical vapor transport and condensation method. The current–voltage relationships of ZnO/G/Si and ZnO/G/PS devices are studied under different volumes of graphene solution. The results reveal the distinctive features of the I–V characteristics of the two devices for different volumes of graphene solution under room light as well as UV illumination.     

银纳米颗粒/多孔硅复合材料的制备与气敏性能研究

采用双槽电化学腐蚀法以电阻率为10-15 Ω·cm的p型<100>晶向的单晶硅片制备了孔径约为1.5 μm, 孔深约为15-20 μm的p型多孔硅, 并以此多孔硅作为基底采用无电沉积法通过调控沉积时间在其表面沉积了不同厚度的银纳米颗粒薄膜. 采用扫描电子显微镜和X 射线衍射仪表征了银纳米颗粒/多孔硅复合材料的形貌和微观结构, 结果表明银纳米颗粒较均匀的分布于多孔硅的表面上且沉积时间对产物的形貌有重要影响. 采用静态配气法在室温下研究了银纳米颗粒/多孔硅复合材料对NH₃的气敏性能. 气敏测试结果表明沉积时间对产物的气敏性能影响较大. 当沉积时间较短时, 适量银纳米颗粒掺杂的多孔硅复合材料由于其较高的比表面积以及特殊的形貌和结构, 对NH₃气体表现出较高的灵敏度、优良的响应/恢复性能. 室温下, 其对50 ppm 的NH₃气体的气敏灵敏度可以达到5.8左右.     

Synthesis and gas sensing properties of high porosity n-type nickel ferrite thin film assisted by altering magnetic field

NiFe₂O₄ thin film with high porosity based gas sensors had been prepared and their microstructure and gas sensing property were investigated. The sensing layer, consisted of perpendicular overlapped NiFe₂O₄ chains which were induced by altering magnetic field to self-assemble, had high porosity. The phase character and porous microstructure were characterized by X-ray diffraction (XRD) and a polarizing optical microscopy. The gas sensing tests results indicated that the sensor presented a high sensitivity to NH₃ at 150 °C, and was selective to NH₃ below 200 °C. The large porosity microstructure should benefit the reaction between target gas and sensing material and the detection of low concentration gas at low working temperature. In repeatability tests, the response and recovery time values had only narrow fluctuations.