The phase transition,hygroscopicity, and thermal expansion properties of Yb_2-xAl_xMo₃O₁₂

Materials with the formula Yb 2-xAlxMo3O12(x =0.1, 0.2, 0.3, 0.4, 0.5, 0.7, 0.9, 1.0, 1.1, 1.3, 1.5, and 1.8) were synthesized and their structures, phase transitions, and hygroscopicity investigated using X-ray powder diffrac- tion, Raman spectroscopy, and thermal analysis. It is shown that Yb2-xAlxMo3O12 solid solutions crystallize in a single monoclinic phase for 1.7 ≤ x ≤ 2.0 and in a single orthorhombic phase for 0.0 ≤ x ≤ 0.4, and exhibit the characteristics of both monoclinic and orthorhombic structures outside these compositional ranges. The monoclinic to orthorhombic phase transition temperature of Al2Mo3O12 can be reduced by partial substitution of Al 3+ by Yb3+, and the Yb2-x AlxMo3O12 (0.0 < x ≤ 2.0) materials are hydrated at room temperature and contain two kinds of water species. One of these interacts strongly with and hinders the motions of the polyhedra, while the other does not. The partial substitution of Al3+ for Yb3+ in Yb2Mo3O12 decreases its hygroscopicity, and the linear thermal expansion co- efficients after complete removal of water species are measured to be 9.1×10 6 /K, 5.5×10 6 /K, 5.74×10 6 /K, and 9.5 × 10 6 /K for Yb1.8 Al0.2 (MoO4)3 , Yb1.6Al0.4 (MoO4 )3, Yb0.4 Al1.6 (MoO4)3 , and Yb 0.2Al1.8 (MoO4)3 , respectively.     

Evolution of the 251 cm^-1 infrared phonon mode with temperature in Ba_0.6K_0.4Fe₂As₂

The far-infrared optical reflectivity of an optimally doped Ba1-xKxFe2As2(x =0.4) single crystal is measured from room temperature down to 4 K. We study the temperature dependence of the in-plane infrared-active phonon at 251 cm-1 . This phonon exhibits a symmetric line shape in the optical conductivity, suggesting that the coupling between the phonon and the electronic background is weak. Upon cooling down, the frequency of this phonon continuously increases, following the conventional temperature dependence expected in the absence of a structural or magnetic transition. The intensity of this phonon is temperature independent within the measurement accuracy. These observations indicate that the structural and magnetic phase transition might be completely suppressed by chemical doping in the optimally doped Ba0.6K0.4Fe2As2 compound.     

High temperature thermoelectric properties of highly c-axis oriented Bi₂Sr₂Co₂O_y thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co2Oy thin films prepared by pulsed laser deposition on LaAlO3(001).Both the electric resistivity ρ and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m·Ω· cm and 202 μV/K at 980 K,resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples.A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature.The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application in high temperature thin film thermoelectric devices.     

微波水热法制备铋铕共掺杂氧化钇磷光粉

用微波水热法制备化学计量比为(Y_0.94-x,Eu_0.06, Bi_x)₂O₃(x=0, 0.01~0.06 )的铋铕共掺杂氧化钇磷光粉。用XRD、SEM、EDS、荧光光谱及HRTEM等进行表征。结果表明:该系统由于铋的加入使(211)晶面的生长受到抑制;在激发波长346 nm时,由于铋的掺入使发光增强;随铋掺杂量的增加,其发光先增强后减弱,并在x=0.03时有最大值;因此该系统可作为320~375 nm的近紫外(如白光LED及高压汞灯)激发用磷光粉。该系统在激发波长为254 nm时,铋的加入使发光强度减弱;因此该系统不适合用于低压汞灯。     

Thermal properties of high-k Hf_1-xSi_xO₂

Classical atomistic simulations based on the lattice dynamics theory and the Born core-shell model are performed to systematically study the crystal structure and thermal properties of high-k Hf1-xSixO2 . The coefficients of thermal expansion, specific heat, Grneisen parameters, phonon densities of states and Debye temperatures are calculated at different temperatures and for different Si-doping concentrations. With the increase of the Si-doping concentration, the lattice constant decreases. At the same time, both the coefficient of thermal expansion and the specific heat at a constant volume of Hf1-xSixO2 also decreases. The Grneisen parameter is about 0.95 at temperatures less than 100 K. Compared with Si-doped HfO2 , pure HfO2 has a higher Debye temperature when the temperature is less than 25 K, while it has lower Debye temperature when the temperature is higher than 50 K. Some simulation results fit well with the experimental data. We expect that our results will be helpful for understanding the local lattice structure and thermal properties of Hf1-xSixO2 .     

Low-voltage antimony-doped SnO₂ nanowire transparent transistors gated by microporous SiO₂-based proton conductors

A battery drivable low-voltage transparent lightly antimony(Sb)-doped SnO 2 nanowire electric-double-layer(EDL) field-effect transistor(FET) is fabricated on an ITO glass substrate at room temperature.An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance(～2.14 μF/cm 2) directly bound up with mobile ions-induced EDL(sandwiched between the top and bottom electrodes) effect.The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm 2 /V · s,current on/off ration of 2 × 10 4,and subthreshold gate voltage swing(S = dV gs /d(log I ds)) of 140 mV/decade.The threshold voltage V th(0.1 V) is estimated which indicates that the SnO 2 namowire transistor operates in an n-type enhanced mode.Such a low-voltage transparent nanowire transistor gated by a microporous SiO 2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors.     

The interplay between the lattice and magnetism in La(Fe_11.4Al_1.6)C_0.02 studied by powder neutron diffraction

The crystallographic structure and magnetic properties of La(Fe 11.4 Al 1.6 )C 0.02 are studied by magnetic measure- ment and powder neutron diffraction with temperature and applied magnetic field. Rietveld refinement shows that La(Fe 11.4 Al 1.6 )C 0.02 crystallizes into the cubic NaZn 13 -type with two different Fe sites: Fe I (8b) and Fe II (96i), and that Al atoms preferentially occupy the Fe II site. A ferromagnetic state can be induced at a medial temperature of 39 K–139 K by an external magnetic field of 0.7 T, and a large lattice is correspondingly found at 100 K and 0.7 T. In all other conditions, La(Fe 11.4 Al 1.6 )C 0.02 has no net magnetization in the paramagnetic (T > T N = 182 K) or antifer- romagnetic states, and thus keeps its small lattice. Analysis of the Fe–Fe bond length indicates that the ferromagnetic state prefers longer Fe–Fe distances.     

Performance of La₂O₃/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors

We report on the performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) and InAlN/GaN high electron mobility transistors(HEMTs).The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device,while the gate leakage current in the reverse direction could be reduced by four orders of magnitude.Compared with the HEMT device of a similar geometry,MOSHEMT presents a large gate voltage swing and negligible current collapse.     

溶胶-凝胶法制备BaGd1-xEuxB9O16红色磷光粉的发光

采用溶胶-凝胶法制备出BaGd_1-xEu_xB₉O₁₆红色磷光粉,对过程的物料配比、前驱体处理和晶化温度等制备条件进行了讨论。结果表明,样品在850 ℃下开始晶化,900 ℃时就能够获得较好的晶化产物,结合不同晶化温度下的发光强度比较确定,晶化温度为950 ℃时,BaGd_1-xEu_xB₉O₁₆磷光粉具有较高的结晶状态和发光强度。当Eu浓度x=0.9时具有最大的发光强度;初始原料配比硼酸须按计量过量15%。所得荧光粉的激发光谱峰值为264,394,465,534 nm等,分别归属于Eu-O电荷迁移带及Eu³⁺的⁷F₀-⁵L₆、⁷F₀-⁵D₂和⁷F₀-⁵D₁跃迁,发射光谱呈Eu³⁺的特征红光,最强的发射峰位于614 nm,归属于⁵D₀-⁷F₂跃迁。进一步研究表明该磷光粉中存在着Gd³⁺对Eu³⁺的能量传递。     

Homogeneous interface-type resistance switching in Au/La_0.67Ca_0.33MnO₃/SrTiO₃/F:SnO₂ heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunctions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 × 10 4 % by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

10BaF₂:NaF,Na₃AlF₆/TiO₂ composite as a novel visible-light-driven photocatalyst based on upconversion emission

A rare-earth free upconversion luminescent material, 10BaF 2 :NaF, Na 3 AlF 6 , is synthesized by a hydrothermal method. The study of fluorescent spectrum indicates that it can convert visible light (550 nm–610 nm) into ultraviolet light (290 nm–350 nm), and two emission peaks at 304 nm and 324 nm are observed under the excitation of 583 nm at room temperature. Subsequently, 10BaF 2 :NaF, Na 3 AlF 6 /TiO 2 composite photocatalyst is prepared and its catalytic activity is evaluated by the photocatalytic reduction of CO 2 under visible light irradiation (λ > 515 nm). The results show that 10BaF 2 :NaF, Na 3 AlF 6 /TiO 2 is a more effective photocatalyst for CO 2 reduction than pure TiO 2 , their corresponding methanol yields are 179 and 0 μmol/g-cat under the same conditions. Additionally, the mechanism of photocatalytic reduction of CO 2 on 10BaF 2 :NaF, Na 3 AlF 6 /TiO 2 is proposed.     

Synthesis and thermoelectric properties of Mn-doped AgSbTe₂ compounds

Polycrystalline p-type Ag 0.9 Sb 1.1 x Mn x Te 2.05(x = 0.05,0.10,and 0.20) compounds have been prepared by a combined process of melt-quenching and spark plasma sintering.The sample composition of Ag 0.9 Sb 1.1 x Mn x Te 2.05 has been specially designed in order to achieve the doping effect by replacing part of Sb with Mn and to present the uniformly dispersed Ag 2 Te phase in the matrix by adding insufficient Te,which is beneficial for optimizing the electrical transport properties and enhancing the phonon scattering effect.All the samples have the NaCl-type structure according to our X-ray powder diffraction analysis.After the treatment of spark plasma sintering,only the sample with x = 0.20 has a small amount of MnTe 2 impurities.The thermal analysis indicates that a tiny amount of Ag 2 Te phase exists in all these samples.The presence of the MnTe 2 impurity with high resistance and high thermal conductivity leads to the deteriorative thermoelectric performance of the sample with x = 0.20 due to the decreased electrical transport properties and the increased thermal conductivity.In contrast,the sample with x = 0.10 exhibits enhanced thermoeletric properties due to the Mn-doping effect.A dimensionless thermoelectric figure of merit of 1.2 is attained for the sample with x = 0.10 at 573 K,showing promising thermoelectric properties in the medium temperature range.     

Structure and electronic structure of S-doped graphitic C₃N₄ investigated by density functional theory

The structures of the heptazine-based graphitic C3N4 and the S-doped graphitic C3N4 are investigated by using the density functional theory with a semi-empirical dispersion correction for the weak long-range interaction between layers.The corrugated structure is found to be energetically favorable for both the pure and the S-doped graphitic C3N4.The S doptant is prone to substitute the N atom bonded with only two nearest C atoms.The band structure calculation reveals that this kind of S doping causes a favorable red shift of the light absorption threshold and can improve the electroconductibility and the photocatalytic activity of the graphitic C3N4.     

The influence of interfacial barrier engineering on the resistance switching of In₂O₃:SnO₂/TiO₂/In₂O₃:SnO₂ device

The I–V characteristics of In2O3:SnO2/TiO2/In2O3:SnO2 junctions with different interfacial barriers are inves- tigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interfacial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interfacial barrier engineering, could be exploited for novel applications in nonvolatile memory devices.     

Charge ordering modulations in a Bi_0.4Ca_0.6MnO₃ film with a thickness of 110 nm

The low temperature sample stage in a transmission electron microscope is used to investigate the charge ordering behaviours in a Bi 0.4 Ca 0.6 MnO 3 film with a thickness of 110 nm at 103 K.Six different types of superlattice structures are observed using the selected-area electron diffraction(SAED) technique,while three of them match well with the modulation stripes in high-resolution transmission electron microscopy(HRTEM) images.It is found that the modulation periodicity and direction are completely different in the region close to the Bi 0.4 Ca 0.6 MnO 3 /SrTiO 3 interface from those in the region a little further from the Bi 0.4 Ca 0.6 MnO 3 /SrTiO 3 interface,and the possible reasons for this are discussed.Based on the experimental results,structural models are proposed for these localized modulated structures.     

Preparing Cu₂ZnSnS₄ films using the co-electrodeposition method with ionic liquids

Cu₂ZnSnS4（CZTS） films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400 C for 30 min using nitrogen as the protective gas.It is found that the CZTS film synthesized at Cu/（Zn+Sn）=0.71 has a kesterite structure,a bandgap of about 1.51 eV,and an absorption coefficient of the order of 10 4 cm 1.This indicates that the co-electrodeposition method with aqueous ionic solution is a viable process for the growth of CZTS films for application in photovoltaic devices.     

Amorphous-crystalline dual-layer structures resulting from metastable liquid phase separation in(Fe₅₀Co₂₅B₁₅Si₁₀)₈₀Cu₂₀ melt-spun ribbons

(Fe50Co25B15Si10)80Cu20 ribbons are prepared by using the single-roller melt-spinning method.A dual-layer structure consisting of a(Fe,Co)-rich amorphous phase and a Cu-rich crystalline phase forms due to metastable liquid phase separation before solidification.The magnetic hysteresis loops of the as-quenched and annealed samples are measured at room temperature.It is indicated that the coercivity of the ribbon is almost zero in the as-quenched state.The crystallization leads to the increase of coercivity and decrease of saturation magnetization.     

Transport properties of a binary mixture of CO₂-N₂ from the pair potential energy functions based on a semi-empirical inversion method

The potential energy surface of a CO 2 –N 2 mixture is determined by using an inversion method, together with a new collision integral correlation [J. Phys. Chem. Ref. Data 19 1179 (1990)]. With the new invert potential, the transport properties of CO2–N2 mixture are presented in a temperature range from 273.15 K to 3273.15 K at low density by employing the Chapman–Enskog scheme and the Wang Chang–Uhlenbeck–de Boer theory, consisting of a viscosity coefficient, a thermal conductivity coefficient, a binary diffusion coefficient, and a thermal diffusion factor. The accuracy of the predicted results is estimated to be 2% for viscosity, 5% for thermal conductivity, and 10% for binary diffusion coefficient.     

Generation of a mid-infrared broadband polarized supercontinuum in As₂Se₃ photonic crystal fibers

A simplified structure of birefringent chalcogenide As 2 Se 3 photonic crystal fiber(PCF) is designed.Properties of birefringence,polarization extinction ratio,chromatic dispersion,nonlinear coefficient,and transmission are studied by using the multipole method,the finite-difference beam propagation method,and the adaptive split-step Fourier method.Considering that the zero dispersion wavelength of our proposed fiber is about 4 μm,we have analysed the mechanism of spectral broadening in PCFs with different pitches in detail,with femtosecond pulses at a wavelength of 4 μm as the pump pulses.Especially,mid-infrared broadband polarized supercontinuums are obtained in a 3-cm PCF with an optimal pitch of 2 μm.Their spectral width at 20 dB reaches up to 12 μm.In the birefringent PCF,we find that the supercontinuum generation changes with the pump alignment angle.Research results show that no coupling between eigenpolarization modes are observed at the maximum average power(i.e.,37 mW),which indicates that the polarization state is well maintained.     

Tunable Ba_0.5 Sr_0.5 TiO₃ film bulk acoustic resonators using SiO₂ /Mo Bragg reflectors

Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators(FBARs) based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3(BST) films at 800 C.The dc bias-dependent resonance may be attributed to the piezoelectricity of the BST film induced by an electrostrictive effect.The series resonant frequency is strongly dc bias-dependent and shifts downwards with dc bias increasing,while the parallel resonant frequency is only weakly dc bias-dependent and slightly shifts upwards at low dc bias(< 45 V) while downwards at higher dc bias.The calculated relative tunability of shifts at series resonance frequency is around 2.3% and the electromechanical coupling coefficient is up to approximately 8.09% at 60-V dc bias,which can be comparable to AlN FBARs.This suggests that a high-quality tunable BST FBAR device can be achieved through the use of molybdenum(Mo) as the high acoustic impedance layer in a Bragg reflector,which not only provides excellent acoustic isolation from the substrate,but also improves the crystallinity of BST films withstanding higher deposition temperature.