Orientation effects on the bandgap and dispersion behavior of 0.91Pb（Zn_（1/3）Nb_（2/3））O_3-0.09PbTiO_3 single crystals

0.91Pb(Zn_1/3Nb_2/3)O₃--0.09PbTiO₃ (PZN--9%PT) single crystals with different orientations are investigated by using a spectroscopic ellipsometer, and the refractive indices and the extinction coefficients are obtained. The Sellmeier dispersion equations for the refractive indices are obtained by the least square fitting, which can be used to calculate the refractive indices in a low absorption wavelength range. Average Sellmeier oscillator parameters E_o, $\lambda$_o, S_o, and E_d are calculated by fitting with the single-term oscillator equation, which are related directly to the electronic energy band structure. The optical energy bandgaps are obtained from the absorption coefficient spectra. Our results show that the optical properties of [001] and [111] poled crystals are very similar, but quite different from those of the [011] poled crystal.     

Heterophase states in 0.10PbTiO<Subscript>3</Subscript>-0.90Pb(Zn<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> crystals

A new model of the elastic matching of phases is proposed, and heterophase structures near the morphotropic phase boundary in 0.10PbTiO₃-0.90Pb(Zn_1/3Nb_2/3)O₃ crystals are studied. Unique behavior of the unit cell parameters is found to favor the elastic matching of the ferroelectric tetragonal and orthorhombic phases under the conditions of complete or partial relaxation of internal mechanical stresses at a volume concentration ratio of these phases of about 20/80% and temperatures of T=20–300 K. Interrelations between the volume concentrations of different domain (twin) types and of the coexisting phases are analyzed.     

Acoustic emission and thermal expansion of Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> and Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>-PbTiO<Subscript>3</Subscript> crystals

The temperature dependence of the elongation per unit length for Pb(Mg_1/3Nb_2/3)O₃ crystals unannealed after growth and mechanical treatment is investigated in the course of thermocycling. It is revealed that this dependence deviates from linear behavior at temperatures below 350°C. The observed deviation is characteristic of relaxors, is very small in the first cycle, increases with increasing number n of thermocycles, and reaches saturation at n≥3. In the first cycle, a narrow maximum of the acoustic emission activity is observed in the vicinity of 350°C. In the course of thermocycling, the intensity of this maximum decreases and becomes zero at n>3. For (1?x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ crystals, the dependence of the temperature of this acoustic emission maximum on x exhibits a minimum. It is assumed that the phenomena observed are associated with the phase strain hardening due to local phase transitions occurring in compositionally ordered and polar nanoregions.     

Dielectric dispersion and magnetic properties of Ba-modified Pb(Fe<Subscript>1/2</Subscript>Nb<Subscript>1/2</Subscript>)O<Subscript>3</Subscript>

The polycrystalline samples of Ba-modified Pb(Fe_1/2Nb_1/2)O₃ (i.e., (Pb_1-xBa_x)(Fe_1/2Nb_1/2)O₃ PBFN, with x=0,0.05,0.07) were synthesized by a mechanosynthesis (i.e., high-energy ball milling) route followed by a mixed oxide method. Structural analysis provides the information on formation of single-phase orthorhombic structure on substitution of a small amount (x=0.07) of Ba at the Pb-site of Pb(Fe_0.50Nb_0.50)O₃ (PFN). The ferroelectric–paraelectric phase transition in PFN was observed at 383 K, which decreases on increasing Ba-concentration in PBFN. Detailed studies of dielectric properties of PBFW show the following: (i) diffuse phase transition, (ii) low loss tangent, (iii) low activation energy, and (iv) low frequency dielectric dispersion. An anomaly in the ac conductivity was found very close to phase transition temperature. The activation energy is found to decrease from 0.19 to 0.01 eV on increasing Ba-concentration to 7% (x=0.07). Temperature field-dependent magnetization measurements of all the samples showed antiferromagnetic transition at ∼15 K (for x=0.07). PBFN sample showed a slight increase in the coercivity (i.e., from 400 Oe (PFN) to 500 Oe (PBFN, for x=0.07) at 2 K. PACS 61.10.Nz; 68.37.Hk; 75.50.Ss; 75.60.Ej; 77.22.Ch; 77.22.Gm     

Electro-optical polarization mode dispersion in PbMg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>O<Subscript>3</Subscript> single crystals

The polarization mode dispersion induced by an external ac electric field in PbMg_1/3Nb_2/3O₃ single crystals is studied experimentally at frequencies of 10⁴–10⁷ Hz. It is established that the discovered electro-optical polarization mode dispersion (EPMD) displays anomalous properties related to the orientation of the induced dipole moments in microregions of the crystal. Analytical expressions describing the peculiarities of the physical properties of relaxors giving rise to the EPMD are obtained.     

The role of the secondary pyroelectric effect in a ferroelectric relaxor 0.72Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>-0.28PbTiO<Subscript>3</Subscript>

The depth profile of the pyroelectric coefficient effective values of a 0.72Pb(Mg_1/3Nb_2/3)O₃-0.28PbTiO₃ (PMN-0.28PT) single crystal is studied. It was shown that owing to high pyroelectric coefficients the secondary pyroelectric effect significally contributes (∼40%) to the total pyroelectric coefficient.     

A comparative Raman study of 0.65(PbMg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>O<Subscript>3</Subscript>) -0.35(PbTiO<Subscript>3</Subscript>) single crystal and thin film

We report a comparative Raman study of 0.65(PbMg_1/3Nb_2/3O₃)-0.35(PbTiO₃) (PMN-0.35PT) single crystal and thin film. Raman spectra investigation indicates a change in bulk from the high temperature cubic to the tetragonal phase and then to the low temperature Mc monoclinic phase. The transition temperatures are in good agreement with the ones previously observed by dielectric measurements on the same sample. In contrast, we observe no phase transition to the monoclinic phase in the PMN-0.35PT 4000 Å thick film and only a cubic to tetragonal diffuse transition has been determined at high temperature. The enhanced stability of the tetragonal phase and the absence of low temperature monoclinic phase have been attributed to the in plane strain.     

The influence of interfacial barrier engineering on the resistance switching of In₂O₃:SnO₂/TiO₂/In₂O₃:SnO₂ device

The I–V characteristics of In2O3:SnO2/TiO2/In2O3:SnO2 junctions with different interfacial barriers are inves- tigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interfacial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interfacial barrier engineering, could be exploited for novel applications in nonvolatile memory devices.     

Structural and electrical properties of 0.7Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>–0.3PbTiO<Subscript>3</Subscript> thin films grown on Ir/MgO buffered Si(100) substrates

Thin films of 0.7Pb(Mg_1/3Nb_2/3)O₃–0.3PbTiO₃ (PMN-PT) have been grown on Ir/MgO buffered Si(100) substrates at different substrate temperatures by pulsed laser deposition. Crystalline phases as well as preferred orientations in the PMN-PT films were investigated by X-ray diffraction analysis (XRD). The microstructure, dielectric and ferroelectric properties of PMN-PT film prepared at 650 °C were studied. The results show that the film prepared at 650 °C exhibits pure perovskite phase and single c-axis orientation. The dielectric constant and dissipation factor of the single c-axis oriented film are 1000 and 0.04 at a frequency of 1 kHz, while the remnant polarization and coercive field are about 13.0 μC/cm² and 100 kV/cm under an electric field of 480 kV/cm, respectively. PACS 81.15.Fg; 77.80.-e; 77. 22.Ej; 77.55.+f; 85.50.Gk     

Polar nanoregions in Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> (PMN): insights from a supercell approach

We report construction of a model of polar nanoregions in the PMN relaxor ferroelectric based on first-principles lattice dynamics for chemically ordered supercells [S.A. Prosandeev et al., Phys. Rev. B 70, 134110 (2004)], combined with invariance under permutations and dipole-dipole interaction as a source supporting randomly oriented residual polarization. Representative analytical estimates of polar nanore-gion — supercell mapping reproduce both nonzero local and zero macroscopic polarization of the structure, as well as the temperature change of the supercell anisotropy at cooling and field cooling.     

Dielectric and optical properties of Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)<Subscript>0.8</Subscript>Ti<Subscript>0.2</Subscript>O<Subscript>3</Subscript> (PMNT-0.2) ferroelectric relaxor single crystals

The dielectric and optical (optical transmission, small-angle light scattering, birefringence) properties of PMNT-0.2 single crystals and their variation induced by a dc electric field have been studied. The birefringence was found to increase anomalously at the transition from the rhombohedral ferroelectric to the inhomogeneous relaxor phase (the spontaneous ferroelectric transition temperature T_sp). Below T_sp, the dielectric and optical properties were observed to exhibit anomalies originating from reorientation and growth of domains in size. Unlike ferroelectric relaxors of the type of PbB′_1/3B′_2/3O₃ and PbB′_1/2B′_1/2O₃, in PMNT-0.2 neither induction of the ferroelectric phase by an electric field nor thermally stimulated destruction of the ferroelectric state occurs through the percolation mechanism (i.e., they are not accompanied by anomalously narrow maxima in small-angle light scattering). This is attributed to the inhomogeneous structure of the relaxor phase, as a result of which the phase transition does not take place simultaneously in various regions of the crystal.     

Performance of La₂O₃/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors

We report on the performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) and InAlN/GaN high electron mobility transistors(HEMTs).The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device,while the gate leakage current in the reverse direction could be reduced by four orders of magnitude.Compared with the HEMT device of a similar geometry,MOSHEMT presents a large gate voltage swing and negligible current collapse.     

Spectroscopic characterization of Yb:Sc₂O₃ transparent ceramics

Yb:Sc2O3 transparent ceramics are fabricated by a conventional ceramic process and sintering in H2 atmosphere. The room-temperature spectroscopic properties are investigated, and the Raman spectrum shows an obvious vibration characteristic band centred at 415 cm 1 . There are three broad absorption bands around 891, 937, and 971 nm, respectively. The strongest emission peak is centred at 1.04 μm with a broad bandwidth (11 nm) and an emission cross-section of 1.8×10 20 cm 2 . The gain coefficient implies a possible laser ability in a range from 990 nm to 1425 nm. The energy-level structure shows that Yb:Sc 2 O 3 ceramics have large Stark splitting at the ground state level due to their strong crystal field. All the results show that Yb:Sc2O3 transparent ceramics are a promising material for short pulse lasers.     

The effect of intragranular microstress in Al₂O₃-SiC nanocomposites

A theoretical model is established to investigate the intragranular particle residual stress in Al2O3-SiC nanocomposites.Using this model,we calculate the average compressive stress on the Al2O3 grain boundary(GB) and the average tensile stress within Al2O3 grains caused by SiC nanoparticles.The normal compressive stress strengthens the GB,and the average tensile stress weakens the grains.The model gives a reasonable interpretation of the strength changes of Al2O3-SiC nanocomposites with the number of SiC particles.     

Thermal properties of high-k Hf_1-xSi_xO₂

Classical atomistic simulations based on the lattice dynamics theory and the Born core-shell model are performed to systematically study the crystal structure and thermal properties of high-k Hf1-xSixO2 . The coefficients of thermal expansion, specific heat, Grneisen parameters, phonon densities of states and Debye temperatures are calculated at different temperatures and for different Si-doping concentrations. With the increase of the Si-doping concentration, the lattice constant decreases. At the same time, both the coefficient of thermal expansion and the specific heat at a constant volume of Hf1-xSixO2 also decreases. The Grneisen parameter is about 0.95 at temperatures less than 100 K. Compared with Si-doped HfO2 , pure HfO2 has a higher Debye temperature when the temperature is less than 25 K, while it has lower Debye temperature when the temperature is higher than 50 K. Some simulation results fit well with the experimental data. We expect that our results will be helpful for understanding the local lattice structure and thermal properties of Hf1-xSixO2 .     

Nanoscale domain structures in 0.91Pb(Zn1/3Nb2/3)O3-0.09PbTiO3 (91PZN-9PT) single crystals studied by piezoresponse forcemicroscopy

High-resolution domain studies have been performed in 91PZN-9PT single crystals by piezoresponse force microscopy. Nanometer- and micron-sized strip-shaped 180º and parallel 90º domains were observed in the rhombohedral (R) and tetragonal (T) phases. Domain patterns with the typical sizes 5–200 nm were observed on the (001)_cub surface of unpoled sample. The existence of nanodomains in the sample is tentatively attributed to the relaxor nature of PZN-PT where small polar clusters may form under zero-field cooling conditions. The domain observation confirms the structure of the morphotropic 91PZN-9PT crystals, which is composed of both the R and T (or monoclinic) orientations states. The outstanding piezoelectric properties may result from the cooperative response of the microscale/nanoscale domain structure.     

Homogeneous interface-type resistance switching in Au/La_0.67Ca_0.33MnO₃/SrTiO₃/F:SnO₂ heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunctions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 × 10 4 % by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

Effect of the la concentration on the dielectric and optical properties of the transparent ferroelectric ceramics 75PbMg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>O<Subscript>3</Subscript>-25PbTiO<Subscript>3</Subscript>

The dielectric, optical, and electro-optical properties of transparent ferroelectric ceramics 75PbMg_1/3Nb_2/3O₃-25PbTiO₃ (75PMN-25PT) with different La concentrations (2, 3, and 4 at %) have been studied. It has been shown that all the samples under study undergo a diffuse phase transition, and the degree of diffuseness increases with an increase in the La concentration. The temperature dependences of the optical transmission in different regimes of applying an electric field and the quadratic electro-optical effect have been investigated. It has been found that, at room temperature, the maximum electro-optical effect is observed in the ceramics with a La concentration of 3 at %. This is explained by the fact that the measurement temperature is close to the Vogel-Fulcher temperature at which the minimum electric field is required to induce ferroelectric states from the relaxor phase.     

Microwave dielectric properties of Ba(Zn<Subscript>1/3</Subscript>Ta<Subscript>2 / 3</Subscript>)O<Subscript>3</Subscript> for application in high power waveguide window

Higher dielectric constant, low dielectric loss and good transmission characteristicshave been the goal for developing the ceramic waveguide window for high power windowapplications. The choice of materials having high k with low dielectric lossand reduced window size is key parameters to achieve maximum microwave transmissionwithout unleashing microwave dissipation. The microwave dielectric properties ofsynthesized Ba(Zn_1/3Ta_{2 /3})O₃ (BZT) ceramics have been studied for high power windowapplications. The structural studies are correlated with microwave dielectric propertiesof BZT. The maximum values of dielectric constant ?_r =30, Q ×f₀ = 102 THz and near zero temperaturecoefficient of resonance frequency were obtained for BZT ceramics sintered at thetemperature of 1550 °Cfor 4 h. The measured results are used to design a tapered transition from air filledwaveguide to narrow (reduced width and height) dielectric filled waveguide using Heckenslinear taper at a specific frequency. The simulation result shows that the lowerreflection loss is obtained for the tapered transition of the narrow BZT window ascompared to the standard waveguide BZT window. The return loss of –34 dB is obtained forS-bandwaveguide window with a bandwidth of 675 MHz. The return loss observed in the narrow BZTwindow is –46 dB with a bandwidth of 570 MHz at a center frequency of 3.63 GHz. Most ofthe disadvantages in conventional windows will be rectified using the design of the tapertransion employing narrow waveguide window in high power applications.