Detailed profiling of CNTs arrays along the growth window in a floating catalyst reactor

We report a detailed longitudinal and depth profiles of multi-wall carbon nanotubes (CNTs) arrays synthesized using xylene and ferrocene in a floating catalyst reactor. Point to point analyses of the CNTs grown in a “growth window” with CNTs arrays longer than 0.5 mm were performed using optical microscopy, Raman spectroscopy, FESEM, high-resolution TGA/DTA, and TEM techniques. The heights of the CNTs arrays show a maximum at a mid point of the growth window, while a reverse trend of minimum is observed for iron-to-CNTs atomic ratios. The ratio of amorphous carbon to CNTs sharply increases along the growth window and from the bottom to top of CNTs arrays. The CNTs diameter also increases along the growth window, due to deposition of the amorphous carbon, which can be almost removed by temperature programmed oxidation up to around 500 °C. A base growth mechanism, the variations of catalyst content, residence time and temperature profile along the growth window, the adsorption and decomposition of polycyclic aromatic hydrocarbons to amorphous carbon, and a limited diffusion of hydrocarbon species through the arrays covered by excessive amorphous carbon may explain the results.     

The effects of catalyst treatment on fast growth of millimeter-long multi-walled carbon nanotube arrays

An optimized strategy was developed for fast growth of millimeter-long CNT arrays using chemical vapor deposition (CVD). Growth temperature of 800 °C was firstly determined, and catalyst heat treatment conditions were then optimized to probe the full potential of growth rate. 1.5 mm long CNT arrays were obtained in 10 min under optimized growth and catalyst heat treatment conditions. The growth rate of CNT arrays strongly depends on the growth temperature and catalyst heat treatment. Insufficient reduction could not reduce iron oxide into metallic state or/and crack down catalyst film into particles, but excessive treatment may result in large particles due to Ostwald ripening process. This method would offer more freedoms in designing the fast growth of high-purity, long CNT arrays.     

Growth of multiwalled carbon nanotube arrays by chemical vapour deposition over iron catalyst and the effect of growth parameters

Multiwalled carbon nanotube (CNT) arrays were grown by catalytic thermal decomposition of acetylene, over Fe-catalyst deposited on Si-wafer in the temperature range 700-750 °C. The growth parameters were optimized to obtain dense arrays of multiwalled CNTs of uniform diameter. The vertical cross-section of the grown nanotube arrays reveals a quasi-vertical alignment of the nanotubes. The effect of varying the thickness of the catalyst layer and the effect of increasing the growth duration on the morphology and distribution of the grown nanotubes were studied. A scotch-tape test to check the strength of adhesion of the grown CNTs to the Si-substrate surface reveals a strong adhesion between the grown nanotubes and the substrate surface. Transmission electron microscopy analysis of the grown CNTs shows that the grown CNTs are multiwalled nanotubes with a bamboo structure, and follow the base-growth mechanism.     

Synthesis and characterization of carbon nanotubes on carbon microfibers by floating catalyst method

In this paper, carbon nanotubes were synthesized on carbon microfibers by floating catalyst method with the pretreatment of carbon microfibers at the temperature of 1023 K, using C₂H₂ as carbon source and N₂ as carrier gas. The morphology and microstructure of carbon nanotubes were characterized by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The composition of carbon nanotubes was determined by energy dispersive X-ray spectroscopy (EDX). The results showed that the surface of treated carbon microfibers was thickly covered by carbon nanotubes with diameters of about 50 nm. EDX image indicated that the composition of carbon nanotubes was carbon. In comparison with the sample grown on untreated carbon microfibers surface, it was found that after carbon microfibers were boiled in the solution of sulfur acid and nitric acid (VH₂SO₄:VHNO₃ = 1:3) and immersed in the solution of iron nitrate and xylene, carbon nanotubes with uniform density can be grown on carbon microfibers surface. Based on the results, we concluded that the pretreatment of carbon microfibers had great effect on the growth of carbon nanotubes by floating catalyst method.     

Structural and morphological dependence of carbon nanotube arrays on catalyst aggregation

Catalyst aggregation affects the growth of carbon nanotube (CNT) arrays in terms of tubular structures, waviness, entanglement, lengths, and growth density etc., which are important issues for application developments. We present a systematic correlation between the aggregation of catalyst on the SiO₂/Si substrate and the structure and morphology of CNT arrays. The thickness of the catalyst film has a direct effect on the areal density of the catalytic particles and then the alignment of the CNT array. Introducing alumina as buffer layer and annealing the catalyst film at low pressure are two effective approaches to downsize the catalyst particles and then the diameter, wall number of the CNTs. Both the size and areal density of the catalyst also change with the CNT growth in accordance with Ostwald ripening process, with the bottom of the CNT array varying from well-aligned to disordered and adhesion between catalyst particles and the substrate getting enhanced. Strategies including tuning the thickness of the catalyst film, changing buffer layer, controlling on the growth time and the system pressure were used to regulate the aggregation of the catalyst. CNT arrays from disordered to well-aligned, from multi-walled to few-walled and further to single-walled were reproducibly synthesized by chemical vapor deposition of acetylene.     

Effect of oligomers on the growth of amorphous silicon films in a PECVD reactor

A plasma-chemical model of processes in a PECVD reactor is constructed that is an extension of the earlier model and takes into account the formation of oligomers Si_nH_m (n ≤ 5). The corresponding scheme of chemical reactions is developed, and simulation of film growth is carried out. It is found that Si₂H₅ and Si₃H₇ components strongly influence the film growth. It is of interest to obtain more reliable experimental data dramatizing these effects.     

A novel continuous process for synthesis of carbon nanotubes using iron floating catalyst and MgO particles for CVD of methane in a fluidized bed reactor

A novel continuous process is used for production of carbon nanotubes (CNTs) by catalytic chemical vapor deposition (CVD) of methane on iron floating catalyst in situ deposited on MgO in a fluidized bed reactor. In the hot zone of the reactor, sublimed ferrocene vapors were contacted with MgO powder fluidized by methane feed to produce Fe/MgO catalyst in situ. An annular tube was used to enhance the ferrocene and MgO contacting efficiency. Multi-wall as well as single-wall CNTs was grown on the Fe/MgO catalyst while falling down the reactor. The CNTs were continuously collected at the bottom of the reactor, only when MgO powder was used. The annular tube enhanced the contacting efficiency and improved both the quality and quantity of CNTs.The SEM and TEM micrographs of the products reveal that the CNTs are mostly entangled bundles with diameters of about 10-20 nm. Raman spectra show that the CNTs have low amount of amorphous/defected carbon with I_G/I_D ratios as high as 10.2 for synthesis at 900 °C. The RBM Raman peaks indicate formation of single-walled carbon nanotubes (SWNTs) of 1.0-1.2 nm diameter.     

Evolution of amorphous carbon films into nano-crystalline graphite with increasing growth temperature in plasma-enhanced chemical vapor deposition

Amorphous carbon films (ACFs) have recently emerged as one of the best candidates for etching-resistant hardmask materials in advanced semiconductor manufacturing processes. Etching resistivity of ACFs is known to be improved by controlling the relative abundance between sp² and sp³ bonds. We have investigated the relative abundance between sp² and sp³ bonds in several ACFs, fabricated by plasma-enhanced chemical vapor deposition at different temperatures, which were analyzed by using X-ray photoemission spectroscopy, Raman spectroscopy, and transmission electron microscopy. We found that the relative abundance of sp² bond increased as the growth temperature was raised. Furthermore, the ACFs eventually evolved into nano-crystalline graphite with increasing growth temperature.     

Cooling rate effects on structure and thermodynamics of amorphous nanoparticles

Cooling rate effects on structure and thermodynamics of amorphous nanoparticles were studied in a spherical model using Molecular Dynamics (MD) method. The good equilibrium melts are cooling down by three different cooling rates in order to observe the cooling rate effects. We find that cooling rate effects on thermodynamic quantities such as potential energy and surface energy are more pronounced than those for static quantities. Microstructure of amorphous nanoparticles is analyzed via radial distribution function (RDF) and coordination number distributions. Relatively weak cooling rate effects on such quantities are found. Microstructure of surface and core of amorphous nanoparticles are analyzed.     

对碳纳米管阵列的场发射电场增强因子以及最佳阵列密度的研究

研究了外电场、碳纳米管自身线度、尤其管的阵列密度对碳纳米管的场发射性能的影响,从理论上深入探索碳纳米管阵列的电场增强因子并提出改善其场发射电子性能的有效途径.研究结果表明,碳纳米管阵列的电场增强因子的数量级一般为102—103,并对任何长径比的碳纳米管阵列,都对应着一个最佳阵列密度,当碳纳米管阵列密度取此最佳密度值时,其电场增强因子明显提高.这里的理论研究对弄清碳纳米管的场发射机理及实验合成高发射性能的碳纳米管阵列有一定的意义 关键词： 碳纳米管阵列 最佳阵列密度 电场增强因子 长径比     

新型氧化铝模板自组装制备非晶碳纳米点阵列膜及其场发射性能研究

通过对阳极氧化铝(AAO)模板进行特殊扩孔处理,消除了AAO模板中带电阴离子对沉积碳离子的不良影响,利用磁过滤阴极弧等离子体沉积技术成功制备了非晶碳纳米尖点阵列膜.场发射扫描电镜(FESEM)分析表明,经过氧化和扩孔多步处理制备的AAO模板具有特殊的开口结构,制备的非晶碳纳米尖点阵列完整地复制了AAO模板的孔道阵列结构,纳米点排列整齐有序,直径约100nm,密度达1010cm-2,样品的场发射测试显示,非晶碳纳米点阵列具有良好的电子发射性能,发射电流为10mA/cm-2时的阈值电场为3.7V/μm.     

Study on effects of substrate temperature on growth and structure of alignment carbon nanotubes in plasma-enhanced hot filament chemical vapor deposition system

Alignment carbon nanotubes (ACNTs) were synthesized on silicon substrate coated with Ni catalyst film and Ta buffer layer by plasma-enhanced hot filament chemical vapor deposition using CH₄, NH₃, and H₂ as the reaction gas, and they were investigated by scanning electron microscopy and transmission electron microscopy. It is found that the diameter of the bamboo-structured ACNTs is increased from 62 to 177 nm when the substrate temperature was changed from 626 to 756 °C. Their growth rate is enhanced by the substrate temperature in a range of 626-683 °C and it is reversely reduced with the substrate temperature after the substrate temperature is over 683 °C. Beginning with wetting phenomenon, the effects of the substrate temperature on the structure and growth rate of the ACNTs are analyzed.     

Site‐specific deposition of Ag nanoparticles on ZnO nanorod arrays via galvanic reduction and their SERS applications

A controllable heterostructure consisting of ZnO nanorod arrays with attached Ag nanoparticles at only one end has been synthesized via a facile and convenient galvanic reduction method. Scanning electron microscopic images of these nanostructures showed good selectivity of Ag deposition on the tip of ZnO nanorod arrays. The formation of these regular Ag ZnO heterogeneous nanorod arrays can be explained by a localization of the electrons at the ends of the ZnO nanorods after the electron transfer step. By tuning the reaction time and the concentration of silver nitrate, the density of Ag nanoparticles on the tip of ZnO nanorods can be well controlled. Owing to the introduction of Ag nanoparticles with different densities, the resulting Ag ZnO heterogeneous nanorod arrays have been proved to be a versatile substrate for surface‐enhanced Raman scattering not only for common organic molecules but also for label‐free protein detection. Copyright © 2009 John Wiley & Sons, Ltd.     

晶体生长角和凝固速率对贵金属电子束区域熔炼晶体生长的作用

基于电子束区域熔炼中熔区上力的平衡关系式, 计算获得了基座法、等径区熔法两种工艺下稳定成形熔区高度的表达式, 探讨了试样尺寸、晶体生长角和凝固速率等参数对六种贵金属稳定成形熔区高度的影响. 结果发现, 区熔相同尺寸试样时, 六种贵金属能够稳定成形熔区高度大小依次排序为 Ru> Pd> Ir> Pt> Ag> Au. 同时获得了这六种贵金属的晶体生长角在8.4°-10.7°之间, 而实际的晶体生长角与界面生长机制有关. 在基座法中, 连续生长机制所能支撑的熔区高度最小, 而等径区熔法中连续生长机制支撑的熔区高度大于位错生长机制和小面生长机制. 这三种晶体界面生长机制中连续生长方式对晶体生长角和区熔熔区高度影响较小, 有利于贵金属区熔单晶制备. 另外当凝固速率达到2.4 mm·min^-1, 位错和小面生长机制对区熔熔区高度的影响也变得很小, 预测的工艺参数与Ir和Ru单晶区熔实验报道结果基本符合.     

Effect of temperature on growth and structure of carbon nanotubes by chemical vapor deposition

The effect of temperature on growth and structure of carbon nanotubes (NTs) using chemical vapor deposition (CVD) has been investigated. Iron embedded silica was used to grow NTs in large quantity at various temperatures from 600 to 1050 °C with gas pressure fixed at 0.6 and 760 Torr, respectively. The growth and structure of the NTs are strongly affected by the temperature. At low gas pressure, the NTs are completely hollow at low temperature and bamboo-like structure at high temperature. While at high gas pressure, all the NTs are bamboo-like structure regardless of temperature. The diameter of NTs increases significantly with temperature. At low gas pressure the diameter gets bigger by mainly increasing the number of graphene layers of the wall of NTs, whereas at high gas pressure the diameter gets bigger by increasing both the number of graphene layers of the wall and the inner diameter of the NTs. This result indicates that the growth temperature is crucial in synthesizing NTs with different structures. The findings here are important for realizing controlled growth of NTs for their applications in different fields. Received: 20 November 2001 / Accepted: 21 November 2001 / Published online: 4 March 2002     

金属铈催化剂对单壁纳米碳管生长和结构的影响

研究了一种利用新型催化剂制备单壁纳米碳管（SWNTs）的工艺方法.将金属铈的氧化物（Ce O₂）与石墨粉按一定比例混合，填充到已打好孔的石墨棒中制成复合石墨电极 ，以其为阳 极在高温氦电弧中实施电弧放电.放电后的生成物经高分辨透射电子显微镜（HRTEM）和拉曼 光谱(Raman)的观察及分析表明：生成物中含有大量呈束状存在的单壁纳米碳管，管径均匀 ，平均直径为120—132nm. 关键词： 单壁纳米碳管 电弧放电 透射电镜分析     

Large scale intercalated growth of short aligned carbon nanotubes among vermiculite layers in a fluidized bed reactor

Short aligned carbon nanotubes (CNTs) were intercalated grown among vermiculite layers from ethylene using a simple fluidized bed chemical vapor deposition (CVD) process. The length of CNTs ranged from 0.5 to 1.5 μm after a synthesizing duration of 1-5 min at 650 °C. The as-grown CNTs vertically aligned to the vermiculite layers were with the mean outer and inner diameter of 6.7 and 3.7 nm, respectively. A CNT yield of 0.22 g/g_cat was obtained for a 5-min growth. Those indicated that the fluidized bed CVD was an effective way for mass production of short CNTs.     

Modelling the effects of nitrogen doping on the carbon nanofiber growth via catalytic plasma‐enhanced chemical vapour deposition process

An analytical model is developed to describe the effects of nitrogen doping on the growth of the carbon nanofibers (CNFs) and to elucidate the growth mechanism of nitrogen‐contained carbon nanofibers (N‐CNFs) on the catalyst substrate surface through the plasma‐enhanced chemical vapour deposition (PECVD) process. The analytical model accounts for the charging of CNFs, kinetics of all plasma species (electrons, ions, and neutrals) in the reactive plasma, generation of carbon species on the catalyst nanoparticle surface due to dissociation of hydrocarbons, CNF growth due to diffusion and precipitation of carbon species, and various other processes. First‐order differential equations have been solved for glow discharge plasma parameters for undoped CNFs (CNF growth in C₂H₂/H₂ plasma) and nitrogen‐doped CNFs (N‐CNF growth in C₂H₂/NH₃ plasma). Our investigation found that nitrogen‐doped CNFs exhibit lower tip diameters and smaller heights compared to the undoped CNFs. In addition, we have estimated that nitrogen‐doped CNFs have more enhanced field emission characteristics than the undoped CNFs. Moreover, we have also observed that N‐CNFs' growth rate increases and tip diameter decreases as the C₂H₂/NH₃ gas ratio decreases. The theoretical results of the present investigation are consistent with the existing experimental observations.     

Synthesis of carbon films in a plasma-chemical reactor based on beam-plasma discharge

A modification of the plasma-chemical reactor based on beam-plasma discharge is developed for the deposition of carbon (including diamond-like carbon (DLC)) films. The reactor differs from the existing devices by the simplicity of the procedure that makes it possible to control the energy characteristics of the ion beam incident on the film in the course of deposition. A method for the computer simulation of the parameters of the ion flux on an electrically insulated surface upon the modulation of the plasma potential is proposed. The method allows the prediction of the ion energy and ion flux that acts upon the deposited film. DLC films on metal substrates are produced. The charge deep-level transient spectroscopy is used to reveal the effect of the adsorbed water and alcohol vapors on the electrophysical properties of the films, which indicates that the films can be used as active adsorbing materials in chemical sensors.     

Effects of flow ratios on surface morphology and structure of hydrogenated amorphous carbon films prepared by microwave plasma chemical vapor deposition

A series of hydrogenated amorphous carbon (a-C:H) films were deposited on silicon substrates by microwave plasma chemical vapor deposition technique with a mixture of hydrogen and acetylene. The effects of flow ratio of hydrogen to acetylene on surface morphology and structure of a-C:H films were investigated using surface-enhanced Raman spectroscopy and scanning probe microscope (SPM) in the tapping AFM mode. Raman data imply a transition from graphite-like phase to diamond-like bonding configurations when the flow ratio increases. AFM measurements show that the increase in hydrogen content, to some extent, can smoothen the surface morphology and decrease the RMS roughness. Excessive hydrogen is found to cause the formation of polymeric hydrocarbon clusters in the films and reduce deposition rate.