Residual resistivity dipoles in electromigration

In the presence of an electric field a driving force is exerted by the surrounding electron gas on the impurity atoms. The contribution from this term is usually referred to as the Bosvieux-Friedel term who related it to the residual resistivity of the impurity. It has been suggested that the residual resistivity of the impurity causes a dipolar buildup around the impurity resulting in the so-called residual resistivity dipoles (RRD's) which in turn contribute a term to the driving force, in addition to the Boxvieux-Friedel term. We discuss the nature of this term for an impurity in a jellium matrix using nonlinear screening theory. It is found to vanish if it is identified with the third order terms in the impurity potential representing contribution from the RRD's.     

Electronic structure of non-magnetic impurities in dilute alloys of Al

The electronic structure of substitutional non-magnetic impurities Cu, Ag, Cd, Mg, Zn, Ga, In, Ge, Si and Sn in Al is studied using density functional theory. A simple physical model is proposed to calculate the effective charges on impurities in trivalent metal Al. A linear relation is found between the effective charges on impurities and impurity vacancy capture radii. The spherical solid model (SSM) is used to account for discrete nature of the host. The impurity-induced change in charge density, scattering phase shifts, host-impurity potential, residual resistivity and impurity self-energy are calculated. Higher order scattering phase shifts are found significant and the host-impurity potential is found proportional to effective charge on impurity in its vicinity. The self-consistently calculated potential is used to calculate the electric field gradients (EFGs) at the first and second nearest neighbours (1NNs, 2NNs) of impurity. The calculated values are in agreement with the experimental results.     

Residual resistivity dipoles

Current flow past lattice defects in metals is associated with a localized conduction band polarization. This has become generally recognized in electromigration theory, but there is disagreement about the details of the polarization pattern. Discussions by others have emphasized polarization terms which are first order in the perturbation potential. This paper analyzes the polarization terms which are proportional to scattering probabilities and thus related to the increase in resistivity. These are second order, or higher, in the scattering potential. A simple physical picture is used to estimate the size of this dipole moment associated with the residual resistivity. A quantum mechanical discussion is given for the one-dimensional case. The conditions under which the polarization can be expected to be linear in the scattering cross-section is discussed.     

A pseudopotential based theory of the driving forces for electromigration in metals

We present a pseudopotential calculation of the driving forces for atomic migration in metals in the presence of electron currents. When electrons are scattered by impurities in a metal, we find that a force is generally exerted on each atom in the vicinity of the scattering center. Because the scattering is predominantly elastic, it is possible to express this force field as the classical electrostatic force arising from the total electronic charge, as has been assumed by Friedel and Bosvieux. The electron charge density is determined from a pseudopotential calculation, and the resulting force is expressed as a sum of effective interactions between the diffusing atom and all crystal defects.The forces on an atom arising from the electron scattering and from the applied electric field together comprise the driving force which causes a net current of atoms. The driving forces are calculated for intestitial and vacancy migration in several metals, and the results are found to compare favorably with most experimental data.     

Plasmon mechanism of resistance magnetooscillations in a two-dimensional electron system in strong electric fields

A multielectron approach is developed to explain the resistance magnetooscillations in two-dimensional electron systems that have recently been detected under the action of microwave pumping [1] or a strong dc electric field [23]. A qualitative change in the screened impurity potential in a strong electric field is taken into account for the first time. When considered in the rest frame of the center of the cyclotron orbit, the impurity potential becomes nonstationary and, thus, should be screened dynamically. This fact substantially changes the picture of impurity scattering in a “pure” two-dimensional system: a dissipative current is induced by the excitation of two-dimensional plasmons rather than by one-electron transitions between the Landau levels. In the case of microwave pumping, every period of resistance oscillation in a reciprocal magnetic field is formed by the excitation of the corresponding magnetoplasmon branch, and the fine structure of oscillations is formed by the singularities of the magnetoplasmon density of states. In a “dirty” two-dimensional system, the role of electron-electron interaction weakens, collective excitations cease to exist, and the results transform into the well-known results obtained in terms of a one-electron approach.     

Quantum theory of transverse galvano-magnetic phenomena

A quantum theory of electrical conduction in crosfsed electric and magnetic fields is given for the limit of very weak scattering. A density matrix formulation of the problem is used, and an arbitrary scattering mechanism is considered. The theory is found to be completely equivalent to theories given earlier by and by and .

Formulae are given for the resistivity in the quantum limit for both longitudinal and transverse orientations of electric field, for degenerate and non-degenerate statistics, and for several different scattering mechanisms. The oscillatory conductivity is calculated for acoustical and ionized-impurity scattering mechanisms. Formulae obtained for the quantum transport effects are in disagreement with the formulae of and of . The discrepancy is attributed to unwarranted approximations in those authors' treatments of scattering.     

Strong electric field effect on weak localization

The influence of an electric field on weak localization is studied by a recently proposed generalized quantum Langevin equation approach to the conductivity problem. A general formula for the memory function of the non-interacting electron gas, in the presence of high order impurity scattering and an arbitrary electric field, is derived. In the low field case, a scale and frequency dependent conductivity is obtained, which reduces to the well known scale dependent conductivity in the static limit. In the high field case, the conductivity is field dependent through the drift velocity. It is shown that the presence of strong electric fields tends to delocalize the one and two dimensional electron systems if one adopts the electron heating model. However, if the electron gas does not heat up, the conductivity will be field independent.     

Spin transverse force on spin current in an electric field

As a relativistic quantum mechanical effect, it is shown that the electron field exerts a transverse force on an electron spin 1/2 only if the electron is moving. The spin force, analogue to the Lorentz for an electron charge in a magnetic field, is perpendicular to the electric field and the spin current whose spin polarization is projected along the electric field. This spin-dependent force can be used to understand the Zitterbewegung of the electron wave packet with spin-orbit coupling and is relevant to the generation of the charge Hall effect driven by the spin current in semiconductors.     

The three-nucleon problems with weak NN interaction

We consider the three-nucleon system in which each two-nucleon pair interacts both strongly and weakly. The strong part is assumed to be separable but an addition of small non-separable term is possible. The weak two-nucleon interaction (which is absolutely non-separable) is assumed to be given in terms of its partial wave components in momentum space. These elements have been calculated by Lassey and McKellar starting from recent models of non-relativistic (strangeness conserving non-leotonic) NN weak interaction. An expression for the weak part of the elastic nucleon-deuteron scattering amplitude is derived within the framework of two potential scattering theory. The weak three-body driving terms are explicitly evaluated. They reflect weak form factors responsible for the weak dissociation of two nucleon isobars (including parity impurity of the deuteron wave function) as well as weak NN scattering. The expressions appearing below are numerically tractable and can be used to elaborate on previous calculations.     

Instationary Electric Fields,Ion Transport and Strong Density Fluctuations in Tokamaks with Dominant Anomalous Electron Transport

A common explanation is given for ion transport and strong broadband density fluctuations in tokamaks as a result of large anomalous electron transport near dominant magnetic surfaces (resp. in small magnetic islands). The main mechanism is local density flattening connected with an anomalous electron transport induced instationary radial electric field, which forces the ions via polarization drift to follow the electrons. For the density flattening process an exact solution of the time-dependent diffusion equation for a linear initial profile over the island width is used. From this we also derive an expression for a temporal growing radial electric field. This positive field reaches its maximum at the density plateau. Strong viscous diffusion or instability-induced transport between high and low electric field regions may now reverse the density flattening. Therefore relaxation oscillations result which may also explain the observed strong density and potential fluctuations in tokamaks. Several details of recent measurements of impurity ion behaviour and density fluctuations in tokamaks may be better explained with the theory given here.     

Negative resistivity anomaly of unstable 4f impurities in metals

The minimum of the resistivity of dilute alloys with unstable Ce and Pr impurities is usually attributed to an abnormal increase of the spin scattering cross section of the inner 4f electron at low temperatures (4f Kondo effect). By comparison with the resistivity increments of stable rare earth impurities, we show that nearT=0 the anomalous increment is in fact consistent with simple potential scattering from the outer 5d6s valence electrons of fractional valent impurities. The observed decrease of the increment at elevated temperatures is too large to be due to 4f spin scattering in the unitarity limit or to a valence change. This decrease therefore implies some kind of shunting of the impurity potential scattering by an unknown mechanism connected with the valence instability of the impurity.     

Electronic structure of hydrogen and muonium in Al,Mg and Cu

The electronic structure of hydrogen and muonium in simple metals is investigated. The spherical solid model potential is used for the discrete lattice and the Blatt correction for lattice dilation. The proton and muon are kept at the octahedral sites in the fcc and hcp lattices and self-consistent non-linear screening calculations are carried out. The scattering phase shifts, electronic charge density, effective impurity potential, self-energy, charge transfer, residual resistivity and Knight shift are calculated. The spherical solid potential changes the scattering character of impurity. The phase shifts are found slowly converging. The scattering is more prominent in Al than in Mg and Cu. The virtual bound states of proton and muon are favoured in all the three metals. The calculated value of residual resistivity for CuH is in good agreement with the experimental value. The results for Knight shift forμ ⁺ in Cu and Mg are in reasonable agreement with the experimental values while those forμ ⁺ in Al are lower than the experimental value. The analytical expressions for effective impurity potential and electronic charge density are suggested.     

自旋轨道耦合系统中的自旋流与自旋霍尔效应

作为自旋电子学的重要研究内容,如何在固态系统中产生、操控以及探测自旋流引起了研究人员的广泛兴趣。基于自旋轨道耦合的自旋霍尔效应为在非磁性半导体中产生自旋流提供了一种有效途径。然而,在具有自旋轨道耦合的系统中,自旋流并不守恒。如何理解这点并恰当地表述相应的连续性方程,成为自旋输运研究的基本问题之一。本文主要综述自旋轨道耦合系统中自旋流与自旋霍尔效应方面的研究进展。引入SU(2)规范势后,自旋流满足协变形式的连续性方程,该方程保证了SU(2)Kubo公式在不同规范固定下的自洽性。利用SU(2)场强张量,可以直接得到自旋密度和自旋流在SU(2)外场中受到的自旋力,该力在只有U(1)磁场时对应于Stern-Gerlach力。由于依赖杂质散射的外在自旋霍尔效应很难被利用,内在自旋霍尔效应的概念被提出:在非磁半导体中,U(1)电场会诱导出自旋流并导致系统边缘处的自旋积累。自旋霍尔效应已经在半导体和金属材料中被观察到。虽然在干净的二维电子气中自旋霍尔电导率是一普适常数e/8π,但杂质对它的影响却引起了人们的高度关注。通过引入退相干效应,自旋霍尔效应中杂质效应的一些令人困惑的理论结果,则得到清晰的解释。此外,本文还将介绍具有层间隧穿的双层二维电子气中的自旋输运现象。在能量简并点附近,自旋霍尔电导率和隧穿自旋电导率均会出现共振现象。当两层间的杂质势强度存在差异时,隧穿自旋电导率随门压的变化曲线呈现出非对称性,显示出自旋二极管效应。     

自旋轨道耦合系统中的自旋流与自旋霍尔效应

作为自旋电子学的重要研究内容,如何在固态系统中产生、操控以及探测自旋流引起了研究人员的广泛兴趣.基于自旋轨道耦合的自旋霍尔效应为在非磁性半导体中产生自旋流提供了一种有效途径.然而,在具有自旋轨道耦合的系统中,自旋流并不守恒.如何理解这点并恰当地表述相应的连续性方程,成为自旋输运研究的基本问题之一.本文主要综述自旋轨道耦合系统中自旋流与自旋霍尔效应方面的研究进展.引入SU(2)规范势后,自旋流满足协变形式的连续性方程,该方程保证了SU(2)Kubo公式在不同规范固定下的自洽性.利用SU(2)场强张量,可以直接得到自旋密度和自旋流在SU(2)外场中受到的白旋力,该力在只有U(1)磁场时对应于Stern-Gerlach力.由于依赖杂质散射的外在自旋霍尔效应很难被利用,内在自旋霍尔效应的概念被提出:在非磁半导体中,U(1)电场会诱导出自旋流并导致系统边缘处的自旋积累.自旋霍尔效应已经在半导体和金属材料中被观察到.虽然在干净的二维电子气中自旋霍尔电导率是一普适常数e/8π,但杂质对它的影响却引起了人们的高度关注.通过引入退相干效应,自旋霍尔效应中杂质效应的一些令人困惑的理论结果,则得到清晰的解释.此外,本文还将介绍具有层间隧穿的双层二维电子气中的自旋输运现象.在能量简并点附近,自旋霍尔电导率和隧穿白旋电导率均会出现共振现象.当两层间的杂质势强度存在差异时,隧穿自旋电导率随门压的变化曲线呈现出非对称性,显示出自旋二极管效应.     

Dielectric polarization: a problem in the physics of an open system

Properties of extended systems that depend upon the electronic position coordinate, electric or magnetic polarization, permanent or induced, require the physics of an open system for their statement and solution. The treatment of an extended system as a collection of cells defined as bounded regions of real space necessarily leads to the inclusion of a contribution to the polarization arising from the transfer of charge across or from the flux in current through a cell's boundary, in addition to its internal polarization. The measurement of electric polarization in terms of the time integral of an induced current for a set of unit cells of arbitrary size within a crystal is shown to include a contribution from the flux in the position weighted current through its boundary. A crystal whose induced current is measured in a shorted capacitor is a macroscopic open system, and in this case it is the flux in the position weighted current through the surfaces that the crystal shares with the plates of the capacitor that contributes to the measured polarization. The present approach, stated in terms of the electron density and its current, challenges the philosophy underlying the ‘modern theory of polarization’ (MTP), which contends that the polarization of a dielectric can be achieved only by shifting the problem from one stated in terms of the electron density to one stated in terms of the phase of the wavefunction. The paper reviews the derivation of the defining equations of macroscopic polarization and magnetization from Maxwell's equations of classical electrodynamics and their use in MTP. Attention is drawn to the omission in these derivations of the contributions from the fluxes in the electric field and currents through the surfaces of the constituent subsystems, as required by the physics of an open system.     

SiC电子输运特性的Monte Carlo数值模拟

利用系综MonteCarlo法研究了2H ,4H和6HSiC的电子输运特性.在模拟中考虑了对其输运过程有着重要影响的声学声子形变势散射、极化光学声子散射、谷间声子散射、电离杂质散射以及中性杂质散射.通过计算,获得了低场下这几种不同SiC多型电子迁移率同温度的关系,并以4H SiC为例,重点分析了中性杂质散射的影响.最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究.将模拟结果同已有的实验数据进行了比较,发现当阶跃电场强度为10×106V·cm-1时,4H Sic电子横向瞬态速度峰值接近33×107cm·s^-1,6H Sic接近30×107cm·s^-1.     

Theory of nonlinear transport for electron-impurity systems in a strong electric field

A force-balance equation is obtained for high electric field transport in electron impurity systems by separating the center of mass motion from the relative motion of electrons, in which the drift velocity and the electron-electron interaction enter dynamically. From this equation the current density as a function of electric field can be determined self-consistently.     

Spin polarization effects and their time evolutions

The time evolution of the density corresponding to the polarization operator, originally constructed to commute with the Dirac Hamiltonian in the absence of an external electromagnetic field, is investigated in terms of the time-dependent Dirac equation taking the presence of an external electromagnetic field into account. It is found that this time evolution leads to ‘tensorial’ and ‘vectorial’ particle current densities and to the interaction of the spin density with the external electromagnetic field. As the time evolution of the spin density does not refer to a constant of motion (continuity condition) it only serves as auxiliary density. By taking the non-relativistic limit, it is shown that the polarization, spin and magnetization densities are independent of electric field effects and, in addition, no preferred directions can be defined.     

基于光弹调制的运动斯塔克效应诊断

电流密度分布是等离子体物理研究的关键分布参数,在托卡马克先进运行模式发展,电流驱动,约束与输运等方面发挥着重要的作用。中性束与等离子体相互作用产生的分裂光谱,包括σ分量与π分量,水平观测时,σ分量的偏振方向垂直于等效电场的方向,π分量的偏振方向平行于等效电场的方向,通过测量分裂光谱的偏振方向可以反演出等离子体电流密度分布。基于光弹调制器的偏振检测系统具有检测精度高、时间响应迅速的独特优点,非常适用于等离子体电流快速变化下的电流密度分布测量。光弹调制器的双折射晶体在周期性外部驱动源的作用下发生弹性形变,其折射率会产生周期性的变化,当偏振光通过时,出射光的偏振特性将相应产生周期性变化,再经过偏振片,形成调制的光强变化。运动斯塔克效应(MSE)诊断的偏振检测系统由两个光弹调制器(PEM)和一个偏振片组成,通过检测不同调制频率的调制强度的比值,从而快速、精确地获得分裂光谱的偏振方向的实时变化,进而得到等离子体电流密度分布。详细介绍了东方超环托卡马克(EAST)装置上的MSE诊断,初步完成了离线测试与标定,参与中性束电流本文驱动物理实验,初步获得了等离子体电流密度分布的信息。     

Theory of the residual electrical resistivity of binary actinide alloys

A system of self-consistent equations has been proposed for the coherent potential approximation of the multiband conductivity model for the case of conduction electron scattering from chaotic electric fields of ions of disordered binary alloy components at zero temperature. It has been qualitatively demonstrated that the deviation of the concentration dependence of the residual electrical resistivity of actinide alloys with multiband conductivity from the Nordheim rule is caused by the explicit dependence of the electrical resistivity of the alloy on the magnitude and sign of the real part of the Green’s function at the Fermi level. The derived system of equations for the multiband coherent potential approximation has been used to calculate the concentration dependence of the density of states and the residual electrical resistivity of the alloys of neptunium and plutonium. The results of the calculations have been compared with the available experimental data.