Ätzuntersuchungen an natürlichen Spaltflächen von (Ga,Al) As/GaAs-Heterostrukturen

This communication reports on etching of {110} cleaved faces of (Ga,Al)As/GaAs heterostructures with and without an additional pn-junction. The etching agents are dilute HNO₃ and mixtures of NH₃ and H₂O₂. The lines appearing in the etch patterns are attributed to the related steep changes in the physicochemical features of the crystals. The etch patterns can be correlated with the aluminum concentration profiles throughout the epitaxial layers as obtained by electron microprobe analysis. The optimum temperatures, times and compositions of the etch solutions are given. Preferential etching of GaAs by NH₃/H₂O₂ mixtures is discussed.     

Zur Ätzstruktur von Silizium-Einkristallen,besonders in versetzungsfreien Bereichen

In silicon crystals a real etching structure can be visualized by means of a suitable method of etching also in the domains free from dislocations. The shapes of etch pits are chiefly dependent on the orientation of the grinding faces. It may be that the etching structure comes from growth domains, bordered by faces {111}, at which impurities are segregated or adsorbed.     

Ätzuntersuchungen an Alaunen mit nichtwäßrigen Lösungsmitteln. Will Kleber zum Gedenken

This paper presents investigations on etching of KAl-, NH₄Al-, KCr- and K(Al, Cr)-alum crystals. The etchant was a solution of tartaric acid in ethyl alcohol which produces well-defined etch pits on {111} faces. The correspondence of etch pits with dislocations was investigated by KAl-alum crystals. Between microscopic holes in the crystals and dislocations are not stated.     

Einfluß der Temperatur auf die Versetzungsstruktur in der Umgebung von Mikrohärteeindrücken in Eiseneinkristallen

The temperature dependence of microhardness on {100}-surfaces of iron single crystals was determined in the temperature range between 200 K and 1180 K. The dislocation structure around the microindentations is investigated by transmission electron microscopy, optical microscopy and etching. The results suggest that the separate ranges of the microhardness-temperature-dependence coincide with characteristic dislocation arrangements. Possible deformation processes are discussed.     

水热法BSO晶体腐蚀像及与晶体对称的关系

对水热法生长的两种不同结晶习性的 BSO晶体进行了腐蚀像的观察研究,得到了{100}、{110}、{211}、{111}晶面的腐蚀形貌特征,建立了BSO晶体腐蚀像在三维空间分布的立体模型。研究发现不同单形晶面的蚀坑形态不同,但都体现了晶体的对称性。不同晶面腐蚀难易程度与晶体结构有关。     

Die Anwendung des Quantimet zur Ätzgrubendichtebestimmung an Silizium-Einkristallen

A quantitative estimation of the structure of etched silicon crystals is possible with the microscope Quantimet by a fast counting the number of particles, i.e. etch pits on {111}-planes. Boundary conditions of the measuring technique are the requisite size of the etch pits of from > 3 … 5 μm, a plane specimen surface, the correct optical magnification, threshold and acceptance width. Sources of errors due to the structure result from the overlap of etch pits at dislocation densities > 10⁴ cm⁻² which leads to an underestimation of the number of etch pits because of the reduced signal output. An overestimation is most caused by an unwished contrast in the surface which yields additional signal outputs. The errors will be eliminated by using a calibration curved. Due to the short time which is necessary for counting, the Quantimet is well suitable for routine testings and for quantitative evaluation of the structure defects (etch pit density) in silicon, including consideration of possible errors.     

Ätzuntersuchungen an Verneuilspinellen

The quality of (100), (110), and (111) oriented spinel substrates in the composition range MgO × 3.3-3.5 Al₂O₃ is examined by chemical etching. The investigation shows that KHSO₄, H₃PO₄, and Na₂B₄O₇ cause dislocation etch pits on (111), and only KHSO₄ on (100) faces. The little rod-shaped defects revealed by etching on (100), (110), and (111) faces were found to be Al₂O₃ precipitates.     

Zum Nachweis von Versetzungen in β-Kupferphthalocyanin-Einkristallen

An etching technique was developed to investigate dislocations in β-copper phthalocyanine single crystals. Considering the expected content of dislocations and the etch pit symmetry the symmetric etch pits are correlated to [010]-edge dislocations on {201 }- and {001}-lattice planes with (001)- and (201 )-slip planes. Asymmetric etch pits on {001}- and {201 }-planes are connected with [010]-edge dislocations related to (100)- and (101 )-slip planes. The dislocation density on growth planes and cleavage planes is commonly lower than 100 cm⁻². [010]-screw dislocations are not observed, but their existence could not be excluded.     

AgGaSe2 on {100} and {110} GaAs—Special Features of Epitaxial Growth

AgGaSe₂ thin epitaxial layers onto {100} and {110} oriented GaAs substrates were prepared by flash evaporation technique and investigated by the RHEED method (reflection high energy electron diffraction). Special epitaxial relationships were found and the results will be discussed.     

Hydrothermal Synthesis and Structure of Fe<Subscript>6.36</Subscript>Mn<Subscript>0.64</Subscript>(PO<Subscript>3</Subscript>(OH))<Subscript>4</Subscript>(PO<Subscript>4</Subscript>)<Subscript>2</Subscript>

Abstract  

Single crystals of iron and manganese phosphate Fe_6.36Mn_0.64(PO₃(OH))₄(PO₄)₂ was synthesized by hydrothermal method. The compound crystallizes in the Fe₇(PO₄)₆ structure type and is isotypic with the solid solution \textM_{7 - \textx} \textM_\textx^￠ ( \textHPO₄ )₄ ( \textPO₄ )₂ {\text{M}}_{{7 - {\text{x}}}} {\text{M}}_{\text{x}}^{\prime} \left( {{\text{HPO}}_{4} } \right)_{4} \left( {{\text{PO}}_{4} } \right)_{2} where M is Fe, Co, Mg, Mn. The compound is triclinic, P-1, a = 6.571(5), b = 7.993(3), c = 9.547(2) Ǻ, α = 103.97(1)°, β = 109.29(2)°, γ = 101.57(3)°. The structure is based on a three-dimensional framework of distorted edge-sharing MO₆ and MO₅ polyhedra, forming infinite chains, which are interlinked by corner-sharing with PO₄ tetrahedra. The formula unit is centrosymmetric, with all atoms in general positions except for one Fe atom, which has site symmetry −1.     

Investigations of LiInSe2 Epitaxial Layers on {100}- and {110}-oriented Substrates with Sphalerite Structure by Means of RHEED

Epitaxial LiInSe₂ films were deposited by flash evaporation technique on {100}, {110} GaAs and {100} GaP. By means of geometrical considerations based on the concept of corresponding substrate and deposit planes epitaxial relationships can be predicted and compared with results from reflection high energy electron diffraction (RHEED). The epitaxial relationships are given for both rhombic (β-NaFeO₂-type) and tetragonal (chalcopyrite-type) LiInSe₂ deposits on {100}- and {110}-oriented sphalerite-type substrates.     

Kristallographische Polarität von AIIIBV - Mischkristallen

From the measurement of X-ray intensity differences of opposite {111}-surfaces in Ga₁ – _xAl_xAs- und Ga₁ – _xAl_xSb-mixed crystals with high Al concentration it was concluded which of the two surfaces is terminated by a layer of the group V atoms. The results are correlated with etching studies.     

Electric conductivity and lattice disorder of PbMoO4 crystals

From differential thermal analysis (DTA), thermal etching, perfectly reversable redox treatments and electric conductivity it is concluded that the Pb/Mo ratio of the PbMoO₄ crystals is always 1 and that phase transitions do not occur. Pb³⁺ ions detectable by an absorption band at 435 nm cause a p-conductivity due to the reaction Pb³⁺ ⇌ Pb⁺⁺ + e⁺. At elevated temperatures the p-conductivity increases with increasing oxygen partial pressure of the surrounding atmosphere. The influence of foreign ions on the concentration of ionic and electronic defects in PbMoO₄, CaMoO₄, PbO, and PbTiO₃ can be explained by an anti-Frenkel disorder of the oxygen ion sublattice. For PbMoO₄ crystals the mobility O⁻ ion vacancies and the free formation enthalpy of anti-Frenkel defects are found to be v_v = \documentclass{article}\pagestyle{empty}\begin{document}$ \mathop - \limits_T^{9160} $\end{document} exp (−1.15 eV/kT) cm² K/Vs and g_AF = 3.6kT −2.2 eV, respectively.     

Zur Realstruktur von Ga1–xInxAs LPE-Schichten

Ga_1–xIn_xAs epitaxial layers (0.02 ≦ × ≦ 0.12) are grown on (111)-oriented GaAs substrates from nonstoichiometric melts. The etch pit densities – determined by chemical etching – yield values between 2 · 10⁵ cm⁻² and 3 · 10⁷ cm⁻² and were found to be dependent on composition, layer thickness and cooling rate. X-ray topography of cleaved {110}-planes gives information on layer quality and indicates the existence of stress in the substrate lattice near the heterojunction. The validity of Vegard's law in the investigated concentration range was confirmed by X-ray determination of the lattice constants. The half width of double crystal spectrometer rocking-curves, the epd and the relative intensity of photoluminescence show similar dependence on the composition of the mixed crystal layers.     

On a delayed dislocation emission from hot hardness indentations

The change of the dislocation arrangements around microindentations after indentation test has been investigated by TEM and etching. The indentations were generated on {100} - surfaces of iron single crystals at temperatures between 800 K and 1000 K. The change of the dislocation structure was found to depend strongly on stress and dislocation density in the deformation field. The deformation field especially acts as a dislocation source operating over long periods. The results suggest that the propagation of emitted dislocations is controlled by dragging of Cottrell-atmospheres of carbon atoms. Conclusions regarding the hardness-temperature relation in pure iron are drawn.     

Zur Heteroepitaxie von AIBIIIC2VI-Verbindungen – Interpretation von RHEED-Diagrammen

Semiconductors of the A^IB^IIIC₂^VI type, crystallizing in the chalcopyrite structure, grow epitaxially with their {112}-planes on monocrystalline substrates with a three-fold symmetry of faces. It is shown that application of the RHEED technique permits definitively to decide what kind of epitaxial overgrowth takes place, supposing the atomic scattering factors of the I and III atoms are sufficiently different and/or the c/a axis ratio differs markedly from 2. CuInSe₂/GaAs and CuGaSe₂/GaAs show one-dimensional epitaxy     

Synthesis,Crystal Structure and Spectroscopic Characterization of {6-[2-(2-chlorophenyl)-1,3-thiazol-4-yl]-2-oxo-1,3-benzothiazol-3(2<Emphasis Type="Italic">H</Emphasis>)-yl}acetic acid

Abstract  

The title compound {6-[2-(2-chlorophenyl)-1,3-thiazol-4-yl]-2-oxo-1,3-benzothiazol-3(2H)-yl}acetic acid was prepared and characterized by elemental analyses, FT-IR, ¹H NMR spectroscopy, X-ray diffraction. A quantum-chemical calculation was performed using the CNDO method. In the title compound, C₁₈H₁₁ClN₂O₃S₂, the crystal structure is stabilized by intermolecular hydrogen bonds (C–H···O=C) to form centrosymmetric R₂² R_{2}^{2} (16) dimers and the C–H···O, O–H···N, and C–H···N interactions generating the graph set motifs R₂² R_{2}^{2} (9) and R₂² R_{2}^{2} (22).     

Synthesis and Crystal Structure of La(NO<Subscript>2</Subscript>)(SO<Subscript>4</Subscript>)(H<Subscript>2</Subscript>O)

Abstract Single crystals of new open-framework lanthanide sulphate nitrite La(NO₂)(SO₄)(H₂O) has been synthesized, in the presence of 2,6-diformyl-4-chlorophenol. His structure has been determined by X-ray diffraction data: the complex crystallizes in the tetragonal system, space group P4₃, with a = 7.0028(2) (?), b = 7.0028(2) (?), c = 11.8341(4) ?, V = 580.34(3) ?³, Z = 4, D _c = 3.582 Mg m⁻³. The three-dimensional (3D) framework of this compound is built up by the linkages of lanthanide atoms and the oxygen atoms of the sulphate and nitrite groups. The lanthanum atom is 9-fold coordinated. The structure is unfamiliar in lanthanide chemistry and this compound represents the first example of nitrite lanthanide sulphate complex. Graphical Abstract An unfamiliar structure in lanthanide chemistry represented by the first example of nitrite lanthanide sulphate complex is described.      

Twinning Morphologies and Mechanisms of β-BaB2O4 (BBO) Crystal Grown by TSSG Method

The twinning morphology of β-BaB₂O₄ crystal grown by TSSG has been studied on the basis of crystallography. It was found that the faces R{101-2} and r{011-4} are often intergrown together by either r{011-4} intergrown in R{101-2} or in reverse, two individuals mostly take X(112-0) and occasionally take Y(011-0) as twin boundary; and that two individuals in the twin could take the same or opposite crystallographic polarity, this was identified by surface etched figures and the piezoelectric measurements. The formation of the twinned crystals are discussed from the crystallographic structural characteristics and the energetic considerations. The experimental factors such as crystal seed quality are suggested to reduce or eliminate the twin formation and to improve the crystal quality.     

Zum chemischen Transport der Übergangsmetalldioxide mit Tellurhalogeniden

The thermodynamic relationship between the transition metal dioxides and their tetrahalogenides is demonstrated, and a comprehensive survey on the thermodynamic values of the compounds is given. – All dioxides of the transition metals existing to 1000°C in the solid state are transportable by TeCl₄. Only those dioxides are transported by TeBr₄ which have corresponding oxide-bromides existing in the gaseous phase. – The forms of crystallographic growth are very similar. The favoured growth direction is [001], the crystal faces are {110}- and {100}-prisms, {101}- and {111}-pyramids, respectively.