Energy formation of antisite defects in doped Sb2Te3 and Bi2Te3 crystals

The free carrier concentration of the Sb_2−xIn_xTe₃, Bi_2−xIn_xTe₃ and Bi₂Te_3−xS_x crystals has been determined from the values of the Hall constants and the free carrier concentration of the Sb_2−xTl_xTe₃ has been calculated from the plasma resonance frequency; with increasing value of x, the hole concentration decreases. As the incorporation of the elements In, Tl and S into the lattice Sb₂Te₃ or Bi₂Te₃, respectively, gives rise to the uncharged defects In^x_Sb, Tl^x_Sb, In^x_Bi and S^x_Te, the x causes the decrease of the antisite defects concentration. The proven effect is explained in the following way: the antisite defects can be created only in crystals whose atoms are bound by weakly polarized bonds. The incorporation of In, Tl and S atoms into the crystal lattice of Sb₂Te₃ or Bi₂Te₃ increases the bond polarity, the ionicity of ternary crystals increases. This unfavorably affects the increase of antisite defects whose concentration decreases. The change of the bond polarity is considered from the changes discovered in the formation energy of antisite defects of the above mentioned ternary crystals.     

Structural defects in Cu-doped Bi2Te3 single crystals

The relation between the concentration of free charge carriers and the concentration of copper atoms in Bi₂Te₃ single crystals doped with copper over a wide range of concentrations has been investigated, with the aim of clarifying the existence of inactive Cu ions. Changes in the concentration of free charge carriers arising from Cu-doping of the melt with that induced by electrochemical intercalation of copper are compared. Models of possible defect structures are proposed for both doped and intercalated single crystals of Bi₂Te₃.     

Electric quadrupole interaction of111Cd in the system Sb1−xMx (M=Ag,Cd,In,Sn), Sb2Te3, Bi2Te3 and In2Te3

We have performed TDPAC-measurements to investigate the static quadrupole interaction of₁₁₁Cd in the classic semimetal Sb. The coupling constant depends on the concentration of small amounts of metal admixtures. The only exception is the system Sb_1–xAg_x. The temperature dependence of the efg in the narrow gap semiconductors Sb₂Te₃ and Bi₂Te₃ is similar to that one in Te. In contrast to these results the efg in the III–VI-semiconductor In₂Te₃ is temperature independent.     

Plasma screening of the fundamental absorption edge in crystals of Bi2Te3-Sb2Te3 solid solutions with more than 80 mol % Sb2Te3

The regularities of changes in the optical properties of crystals of Bi₂Te₃-Sb₂Te₃ solid solutions in the range of the effects caused by free-carrier plasma oscillations at a variation in the ratio of Bi₂Te₃ and Sb₂Te₃ components are investigated. It is established that, when the Sb₂Te₃ content in a solid solution exceeds 80 mol %, the fundamental absorption edge undergoes plasma screening. Doping a Sb₂Te₃ crystal with tin increases the free-carrier concentration and plasma frequencies, thus enhancing the screening effect, whereas introduction of 0.1 mol % selenium reduced the plasma frequency and thus removes the fundamental-absorption-edge screening.     

Reflectivity of strongly doped n-Bi2Te3 crystals in the IR region

Czechoslovak Journal of Physics - Reflectivity has been measured in the region of plasma resonance frequency on strongly doped n-Bi2Te3(I) crystals with a free electron concentration of 2×10...     

The Nernst-Ettingshausen, Seebeck, and Hall effects in Sb2Te3 single crystals

This paper reports on measurement of the temperature dependences of the following transport coefficients: electrical conductivity in the σ₁₁ cleavage plane, the Seebeck coefficients S ₁₁ and S ₃₃ (axis 3 is along the trigonal crystal axis), the Hall coefficients R ₁₂₃ and R ₃₂₁, and the Nernst-Ettingshausen constant Q ₁₂₃; all measurements were made on high-quality Czochralski-grown Sb₂Te₃ single crystals. The results obtained are analyzed in terms of phenomenological theory. It is shown that the main features of the experimental data, including the anisotropy of the Hall and Seebeck effects, can be explained within a two-band model with notice-ably different anisotropy of the mobilities of holes of two types in the cleavage-plane and trigonal-axis directions. Estimates are made of the band-gap width (?_g?0.3 eV), as well as of the energy gap between the main and additional valence-band extrema (Δ?_v～0.1 eV).     

Thermoelectric properties of Bi2Se3/Bi2Te3/Bi2Se3 and Sb2Te3/Bi2Te3/Sb2Te3 quantum well systems

In this work, we develop a theory of thermoelectric transport properties in two-dimensional semiconducting quantum well structures. Calculations are performed for n-type 0.1 wt.% CuBr-doped Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ and p-type 3 wt.% Te-doped Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ quantum well systems in the temperature range 50–600 K. It is found that reducing the well thickness has a pronounced effect on enhancing the thermoelectric figure of merit (ZT). For the n-type Bi₂Se₃/Bi₂Te₃/Bi₂Se₃ with 7 nm well width, the maximum value of ZT is estimated to be 0.97 at 350 K and for the p-type Sb₂Te₃/Bi₂Te₃/Sb₂Te₃ with well width 10 nm the highest value of the ZT is found to be 1.945 at 440 K. An explanation is provided for the resulting higher ZT value of the p-type system compared to the n-type system.     

Characterization of Mn-doped Sb1.5Bi0.5Te3 single crystals

Abstract

Single crystals of (Sb_0.75Bi_0.25)_2-xMn_xTe₃ (x = 0.0–0.05) were characterized by X-ray diffraction, measurements of reflectance in the plasma resonance frequency region, Hall coefficient, electrical conductivity, and Seebeck coefficient. It was found that Mn atoms in the crystal structure of Sb_1.5Bi_0.5Te₃ behave like acceptors; the increase in the hole concentration is explained by the formation of substitutional defects of Mn'_Sb and Mn'_Bi in the crystal lattice of the studied crystals.     

Scanning tunneling microscope light emission spectra of polycrystalline Ge2Sb2Te5 and Sb2Te3

We have observed scanning tunneling microscope light emission (STM-LE) spectra of Ge₂Sb₂Te₅ and Sb₂Te₃. Although these chalcogenide alloys exhibit band gaps less than 0.5 eV, the STM-LE was observed with a narrow spectral width at a photon energy of 1.5 eV for both materials. By analyzing its bias voltage, polarity, and temperature dependencies combined with recently reported theoretical electronic structures, we concluded that the STM-LE is excited by electronic transitions taking place in the local electronic structure having a direct gap-like shape with a band gap of 1.5 eV, commonly found in the electronic structures of both materials.     

Electrical properties of doped single crystals of Zn4Sb3

Conductivity , thermo-emf , and Hall constant R are presented as functions of temperature for pure Zn₄Sb₃ single crystals and for ones doped with Ag, Au, Ga, In, Sn, Pb, and Te. Here Ag, Au, Sn, and Pb act as acceptors. Increased hole concentration and , together with the reduced , are produced by In, Te, and Ga, on account of formation of solid solutions of InSb, GaSb, and ZnTe in Zn₄Sb₃.     

Tunneling through narrow-gap semiconductor Sb2Te3 barrier

Tunnel experiments have been performed on Au/Sb₂Te₃/Al tunnel junctions to study elastic interelectrode tunneling through the small energy gap of a narrow-gap semiconductor. Tunnel conductance exhibited narrow width conductance peak at zero bias voltage. This behaviour is in accordance with the result of the theoretically calculated tunnel conductance, in which the nonparabolic dispersion relation within the energy gap of the narrow-gap semiconductor used as a tunnel barrier in a metal/narrow-gap semiconductor/metal tunnel structure is included. And some interesting structures are also observed in the conductance curves.     

Paramagnetic defects in ZnSe crystals doped with iron ions

The electron paramagnetic resonance (EPR) spectra of iron-doped ZnSe single crystals were studied. In addition to cubic Fe³⁺ and Mn²⁺ centers and also Fe²⁺, and Cr²⁺ centers, monoclinic Fe³+ complexes locally compensated by Cu+ ions were revealed. Some trigonal centers with a spin of 3/2 were also found and studied. The zero-field splittings of monoclinic centers were measured, and the parameters of the monoclinic and trigonal spin Hamiltonians were determined. The nature of trigonal centers was discussed.     

Sb2Te3 纳米结构的制备与表征

以室温热电性能优异的传统热电材料Sb₂Te₃为研究对象,利用化学气相沉积法制备Sb₂Te₃单晶纳米结构,并研究其生长机理.实验结果表明,不加催化剂时Sb₂Te₃易生长成六方纳米盘,在金催化剂条件下定向生长成纳米线.Sb₂Te₃的形貌与其晶体结构和生长机理有关.Sb₂Te₃为三角结构,Sb和     

High pressure transport characteristics of Bi2Te3, Sb2Te3, and BiSbTe3

This paper presents ambient and high pressure measurements of transport properties of the Bi₂Te₃–Sb₂Te₃ series of materials. The electrical resistivity, thermal conductivity, and Seebeck coefficient have been measured on both end compounds and the direct solid solution of the two at pressure up to 10 GPa. An additional discussion involving the high pressure structure will be presented. From this, it was determined that these materials undergo at least two structural phase transitions between 0 and 20 GPa and a discussion is presented regarding this and the changes in the transport properties.     

不同掺杂Zn0.95Cd0.05 Te〈110〉单晶的THz辐射特性研究

利用太赫兹(THz)时域光谱技术研究了不同掺杂的Zno95Cd0.05Te<110〉单晶产生THz辐射的特性.实验发现,当晶体的直流电阻率ρ＞102 Ω·cm时,晶体产生THz辐射的效率随着晶体电阻率的增加而增加,但当电阻率ρ＞106Ω·cm时,晶体产生THz辐射的效率出现饱和甚至可能下降.光谱测量结果表明,此类晶体在THz波段的透过率基本上取决于其低频电阻率,但除了晶体对THz辐射的吸收这一因素外,其色散性质的变化对晶体的THz辐射性能也有重要的影响.因此,当ZnCdTe晶体用于THz辐射产生和探测时,仅仅用材料的Hall电阻率不能完全表征器件的性能.     

Structure and electrical properties of Sb2Te3 and Bi0.4Sb1.6Te3 metastable phases obtained by HPHT treatment

We have obtained the metastable phase of the thermoelectric alloy Bi_0.4Sb_1.6Te₃ with electron type conductivity for the first time using the method of quenching under pressure after treatment at P=4.0 GPa and T=400–850 °C. We have consequently performed comparative studies with the similar phase of Sb₂Te₃. The polycrystalline X-ray diffraction patterns of these phases are similar to the known monoclinic structure α-As₂Te₃ (C2/m) with less monoclinic distortion, β ≈ 92°. We have measured the electrical resistivity and the Hall coefficient in the temperature range of T=77?450 K and we have evaluated the Hall mobility and density of charge carriers. The negative Hall coefficient indicates the dominant electron type of carriers at temperatures up to 380 K in the metastable phase of Sb₂Te₃ and up to 440 K in the metastable state of Bi_0.4Sb_1.6Te₃. Above these temperatures, the p-type conductivity proper to the initial phases dominates.