Composition dependence of the glass transition temperatures of PdNiP and PtNiP glasses

Thermal properties of glassy PdNiP and PtNiP alloys have been measured as a function of the concentration of transition metals. The glass transiion temperature, T_g, of these alloys glasses exhibits a negative linear deviation with transition metal content - which is in contrast to the increasing T_g of binary glassy alloys with increasing metalloids.It is suggested that the suppression of the glass transition temperature of these glassy alloys may be attributed to the excess configurational entropy of disorder associated with a mixture of hard spheres differing in radius. In contrast, the increasing T_g of binary glassy alloys with the metalloid content may be associated with the short-range order resulting from strong interactions between metal and metalloid atoms.     

Glass formation and properties of chalcogenide systems XVIII. On glass formation in the system GePbSeTe

The glass formation range of the system GePbSeTe has been investigated. For selected series properties such as the mole volume, glass transition temperature and the electrical direct current conductivity are discussed with respect to their dependence on composition. For some series the results can be compared with the properties of glasses containing Sn instead of Pb. The change in the energy gap for the crystalline compounds SnSe, SnTe, PbSe and PbTe is reflected by the data of the Sn or Pb containing glasses.     

Peculiarities of the Electron Structure of Pseudobinary Alloys (GeTe)m–(Sb2Te3)n

Crystallography Reports - The electron band structure of GeTe, Sb2Te3, GeSb2Te4, and Ge2Sb2Te5 compounds has been calculated by the electron density functional method using the WIEN2k software...     

Crystallization kinetics of a Se–Ge–Sb alloy glass

The glass-forming ability of a Se_0.615Ge_0.154Sb_0.231 alloy is analysed by computing the critical cooling rate and the time-temperature-transformation curve, at various temperatures. The calculation is based on some experimentally determined portions of the time-temperature-transformation curve, from which the rate of increase of viscosity with falling temperature below the melting point is deduced, using classical crystallization kinetics treatment.     

ESR study of Mn2+ in GeTe and GeTeSi glasses

The electron spin resonance spectra of Mn²⁺ ions have been studied in Ge_xTe_100?x with x = 15, 17.5 and 20, and Ge_20?xTe₈₀Si_x with 0 ?x? 20. All samples are found to exhibit six hyperfine lines centered at g = 4.3 with hyperfine interaction constant A = 56 × 10^?4cm^?1. The g = 4.3 line is interpreted as being caused by Mn²⁺ ions incorporated in the amorphous network and surrounded by four Te atoms in an arrangement of orthorhombic symmetry. Some of the samples of GeTe show a g = 2.0 line. This line also appears after heat treatment in air at temperatures above the glass transition temperature. It is concluded that the g = 2.0 line is caused by Mn²⁺ ions in phase separated microcrystalline or concentrated regions of MnO in the glass.     

Formation of glass in the GeSiS system

The formation of glass in the GeSiS system was investigated. After synthesis of material with the general formula Ge_1?xSi_xS_y, where x was chosen to be 0.05, 0.1, 0.2, 0.3 and y was in the range 1.28–3.6, cylindrical samples were prepared and used for the characterization of glass by means of DTA. It was found that the substitution of germanium with silicon does not lead to any expressive change of the glass transition temperature, crystallization and the onset of melting.     

Glass forming region in the GeSe2–GeTe–PbTe system and some physicochemical properties of glassy alloys

New chalcogenide glasses from the GeSe₂–GeTe–PbTe system were synthesized. The glass forming region was determined using visual, X-ray diffraction and scanning electron microscopy analyses. It is extended towards the GeSe₂ and lies partially on the GeSe₂–GeTe (0–58 mol% GeTe) and GeSe₂–PbTe (20.0–57.5 mol% PbTe) sides. No glasses were obtained in the GeTe–PbTe system. The investigated physicochemical properties vary between 4.04–6.21 g/cm³ (density, d); 97–121 kgf/mm² (microhardness, HV); ?0.187 ÷ 0.007 (compactness, C) and 14.3–17.8 GPa (elasticity modulus, E), respectively.     

Spinodal decomposition during continuous cooling of a PbOB2O3Al2O3 glass

Spinodal decomposition during continuous cooling of the PbOB₂O₃Al₂O₃ quasi-binary glass system was analysed by numerical integration of Cook's differential equation (which includes the contribution of random density fluctuations) for small angle X-ray scattering (SAXS) intensity. The SAXS curves derived from the calculations have a wide range of k-Fourier components (0 < k < k_c) for which a positive amplification factor occurs and they show a “crossover” point at $\text{k}{}_{\mathrm{c}}\text{= 0.155}\text{A}\text{?}{}^{\mathrm{?1}}$. The wavenumber which receives maximal amplification, k_m, increases with the cooling rate, Q, as $\text{Q}{}^{\mathrm{<mtext>1</mtext><mtext>n</mtext>}}$, with n = 10.9. This Q dependence of k_m is similar to that predicted by Huston et al., however our results show a higher value of n. The dependence on Q and k_m of the SAXS intensity I(k_m) was also deduced. The measurements of SAXS curves were performed on glass samples prepared by the splat-cooling technique. Because of the difficulties which arise in the determination of the cooling rate of the samples, the only experimental results that could be compared with the theory are the k_m dependence of I and the value of k_c. These results are satisfactorily understood in terms of the present analysis.     

Glass formation and switching in the SbSe systems

New glass forming regions in the SbSe system have been observed using splat cooling techniques. The glass region is limited to compositions with less than 50 at % Sb. The glass whose composition corresponds to Sb₂Se₃ exhibits memory and can be switched off only by cooling in liquid nitrogen in the presence of an electric field. The off-state electrical resistance is of the order of 10⁵ times greater than that of the memory on-state.     

Electrical and optical properties of the AsTeIn and GeSeIn chalcogenide systems

The influence of indium on the optical and properties of As_2−xTe_3−xxIn_2x, As_20−xTe_80−xIn_2x and Ge_20−xSe_80−xIn_2x is described. In Te-containing glasses the Fermi level is shifted by 0.05 eV and in Se-containing glasses by 0.2 eV towards the valence band.     

Relation between electrical and optical gaps of amorphous semiconductors in the SiAsTe system

Electrical and optical properties of semiconducting SiAsTe glasses have been investigated. Compositional dependences of the properties in the Si_xAs_yTe_z system are examined as a function of atomic percentage x (or y, z) of one element with parameters of constant atomic ratio y/z (or x/z, x/y) of the other two elements. A pre-exponential factor σ₀ in the dc conductivity formula is estimated to be $\text{(2.1 ± 0.6) × 10}{}^4\text{(Ω ·}\text{cm}\text{)}{}^{\mathrm{?1}}$, inependently of the compositions. A systematic relationship between the compositional changes in the electrical gap E_g(el) and optical gap E_g(op) has been found. The energy gaps increase linearly with increasing Si content and decreasing Te content, but are almost independent of As content. The relation between E_g(el) and E_g(op) is expressed by E_g(el) = 1.60 E_g(op) ? 0.15 in eV. On the other hand, the optical absorption coefficient α(Ω) near the band edge follows the empirical formula, $\text{α(Ω) = α}{}_0$ exp ($\text{h}\text{?}\text{Ω/E}{}_{\mathrm{<mtext>s</mtext>}}$). The experimentally determined factor E_s increases linearly with E_g(op) and is closely related to the energy difference between the two gaps. A tentative model to explain these experimental results is proposed by taking into account of the effect of the potential fluctuations in such disordered materials.     

Glass transition and specific heats in the systems PS,PSe,AsS and AsSe

The glass transition temperatures were measured in the systems AsS, As_0.5P_0.5S, PSe, AsSe and PAsSe. Heat capacities of the glasses in the selenium systems were obtained by differential scanning calorimetry. As shown by the residual entropies departures from ideality are high in the chalcogen glasses. The results are discussed in terms of the structure of glasses in these systems. The thermodynamic data of glasses and liquids in these systems indicate a balance of intra- and intermolecular saturation of bonds. The amount of polymerization increases with increasing average molecular weight in the glass and with increasing temperature in some of the investigated liquids.     

Thermal properties of chalcogenide glasses in the GeSe2–As2Se3–CdSe system

In the present work, thermal properties of GeSe₂–As₂Se₃–CdSe glasses were investigated via DSC measurements. The dependences of glass transition temperature and thermal stability on glass composition were discussed. XRD measurement was also performed to validate the effect of cadmium on the thermal properties of glasses. The calculated Avrami exponent was used to demonstrate the three-dimensional growth of crystals in the glass matrices. The crystallization kinetics for the glasses was studied by using the modified Kissinger and Ozawa equations.     

Nuclear magnetic resonance studies of the glasses in the system K2OB2O3P2O5

B¹¹ NMR spectra have been used to study the structure of glasses in the system K₂OB₂O₃P₂O₅. The results indicate that the glasses do not contain an appreciable number of boron atoms in BO₃ units with one or two non-bridging oxygens. The fraction N₄ of boron atoms in BO₄ units is measured and analyzed according to a structural model containing the following elements. (1) If the binary borophosphate system forms glasses, they consist of a borophosphate (BPO₄) network and a borate network for K<1, or a borophosphate (BPO₄) network and a phosphate network for K>1, where K = mol.% P₂O₅/mol.% B₂O₃. (2) The conversion rates of BO₄ units (i.e. the rate of production or destruction by added oxygens) in the borate network and the borophosphate (BPO₄) network are given as (+2) and (?0.38), respectively. (3) K⁺¹ ions are proportionally shared between the two networks; (i.e. between the borate and borophosphate (BPO₄) networks for K<1, and between the phosphate and borophosphate (BPO₄) networks for K>1).     

Preparation and properties of chalcogenide glasses in the GeS2–Sb2S3–CdS system

In searching for new kind of photoelectric material, chalcogenide glasses in the GeS₂–Sb₂S₃–CdS system have been studied and their glass-forming region was determined. The system has a relatively large glass-forming region that is mainly situated along the GeS₂–Sb₂S₃ binary side. Thermal, optical and mechanical properties of the glasses were reported and the effects of compositional change on their properties are discussed. These novel chalcogenide glasses have relatively high glass transition temperatures (T_g ranges from 566 to 583 K), good thermal stabilities (the maximum of deference between the onset crystallization temperature, T_c, and T_g is 105 K), broad transmission region (0.57–12 μm) and large densities (d ranges from 2.99 to 3.34 g cm^?3). These glasses would be expected to be used in the field of rare earth doped fiber amplifiers and nonlinear optical devices.     

Ionic conductvity and NMR investigation of quaternary glasses in the ZrF4BaF2ThF4LiF system

The existence of glasses involving large amounts of LiF (up to 60%) within the ZrF₄BaF₂ThF₄LiF quaternary systems has allowed the authors to study the evolution of transport properties with varying LiF content.A minimum of ionic conductivity bound to a maximum of activation energy has been detected when the atomic Li/F ratio is equal to ≅ 0.07. In the Li-low concentration domain, σ increases regularly and ΔE decreases simultaneously when the BaF₂ concentration increases; on the contrary in the Li-high concentration region log σ and ΔE are quasi-linear functions, increasing and decreasing respectively, of the LiF rate.A ⁷Li and ¹⁹F NMR investigation has shown that Li⁺ and F⁻ ions are simultaneously mobile and the temperature dependence of the number of mobile F⁻ ions has been determined. In the Li-low concentration domain transport properties result from mixed contributions of mobile Li⁺ and F⁻ ions, for high Li concentrations they depends only on the Li⁺ rate.Glasses with high Li-content have good electrical performnces (e.g. σ_175°C ≅ 2.10⁻⁴ω⁻¹ cm⁻¹ for Zr_0.20Ba_0.10Li_0.60Th_0.10F₂).     

Crystallization and phase-separation of Li2OSiO2 glass

The crystallization and phase-separation phenomena in the Li₂OSiO₂ glass are studied by positron lifetime and annihilation lineshape measurements. Analysis of the kinetic data shows three-dimensional morphology of growing crystals. Phase-separation is seen to increase the density of crystal nuclei and the rate of volume crystallization, but it does not affect the morphology. In addition, surface crystallization is detected in glasses with small degrees of phase-separation. The results are consistent with scanning electron and optical micrographs.     

Glass formation and properties of chalcogenide systems (XXII) the phase diagram of the system PbSe?GeSe2 and on the compound Pb2GeSe4

The phase diagram of the system PbSe GeSe₂ is studied by X-ray analysis and DTA. Pb₂GeSe₄ is the only compound which is formed in the system. It melts incongruently at 590 ± 4°C. The formation of Pb₂GeSe₄ as a definite compound is supported by studying the phase relations in the corresponding area of the ternary system PbSe GeSe GeSe₂.