Effect of pressure on the electrical resistivity of bulk Ge20Te80 glass

An irreversible pressure induced semiconductor-to-metal transition in bulk Ge₂₀Te₈₀ glass is observed at about 5 GPa pressure. The high pressure phase has a face centered cubic structure with a lattice constant 6.42 A° as deduced by X-ray diffraction studies on the pressure quenched samples. The temperature and pressure dependence of the electrical resistivity confirms the observed transition to be a semiconductor-to-metal transition. The temperature dependence of thermo electric power is also reported.     

Electrical transport and high pressure studies on bulk Ge20Te80 glass

The electrical resistivity of bulk Ge₂₀Te₈₀ has been measured as a function of pressure and temperature. At 5 GPa, an amorphous semiconductor-to-crystalline metal transition has been observed. The sample recovered from the high pressure cell, after the application of 7 GPa, has a face-centred cubic structure with a lattice constant of 6·42 A. In crystalline sample, the semiconductor-to-metal transition occurs at 7 GPa. The thermoelectric power has also been measured for glassy samples in the temperature range 300–240 K.     

Thermal and electrical properties of Te80Si20−xPbx glasses

Results of calorimetric, electrical resistivity and X-ray measurements of Te₈₀Si_20?xPb_x glasses are reported. Experimental findings concerning correlations between transformation temperatures obtained from DSC and resistivity measurements are presented. Conduction activation energy is discussed in terms of changes of randomness of amorphous structure caused by concentration changes.     

Curie temperature,crystallization temperature and electrical resistivity as a function of composition for Fe80-xMoxB20 metallic glasses

The influence of the substitution of small amounts of Fe with Mo (0–10 at.%) in a Fe₈₀B₂₀ metallic glass on the Curie temperature, crystallization temperature and room temperature electrical resistivity is reported. A decrease in Curie temperature of approximately 40 K/at.% Mo is observed. The crystallization temperatures show a small increase with increasing Mo-content, and the room temperature electrical resistivity of the as quenched samples is essentially independent of the Mo-content (?^am(295 K) ～ 128 μχ-cm).     

Calorimetric study of characteristic temperatures and crystallization behavior in Ge-As-Se-Te glass system

Results of differential scanning calorimetry of high purity Ge_xAs_40−xSe₄₀Te₂₀ (x=0-40) chalcogenide glasses are reported. The glass transition temperatures and crystallization behavior were studied under non-isothermal conditions at different heating rates (2.5-35 K/min). The glass transition temperature changes from 140 °C up to 320 °C with increasing the Ge content in Ge_xAs_40−xSe₄₀Te₂₀ glass. The studied glasses with x≤35 have no exothermal peaks of crystallization, indicating their high glass-forming ability. The glass of Ge₄₀Se₄₀Te₂₀ composition has one-stage glass transition and double-stage crystallization process during phase change. The activation energy of the glass transition (E_g), the activation energy of crystallization (E_c), the Avrami exponent (n), the frequency factor (K₀) and the crystallization criteria of Ge₄₀Se₄₀Te₂₀ glass were determined.     

High-precision measurements of the compressibility and the electrical resistivity of bulk <Emphasis Type="Italic">g</Emphasis>-As<Subscript>2</Subscript>Te<Subscript>3</Subscript> glasses at a hydrostatic pressure up to 8.5 GPa

High-precision studies of the volume and the electrical resistivity of g-As₂Te₃ glasses at a high hydrostatic pressure up to 8.5 GPa at room temperature are performed. The glasses exhibit elastic behavior in compression only at a pressure up to 1 GPa, and a diffuse structural transformation and inelastic density relaxation (logarithmic in time) begin at higher pressures. When the pressure increases further, the relaxation rate passes through a sharp maximum at 2.5 GPa, which is accompanied by softening the relaxing bulk modulus, and then decreases, being noticeable up to the maximum pressure. When pressure is relieved, an unusual inflection point is observed in the baric dependence of the bulk modulus near 4 GPa. The polyamorphic transformation is only partly reversible and the residual densification after pressure release is 2%. In compression, the electrical resistivity of the g-As₂Te₃ glasses decreases exponentially with increasing pressure (at a pressure up to 2 GPa); then, it decreases faster by almost three orders of magnitude in the pressure range 2–3.5 GPa. At a pressure of 5 GPa, the electrical resistivity reaches 10^–3 Ω cm, which is characteristic of a metallic state; this resistivity continues to decrease with increasing pressure and reaches 1.7 × 10^–4 Ω cm at 8.1 GPa. The reverse metal–semiconductor transition occurs at a pressure of 3 GPa when pressure is relieved. When the pressure is decreased to atmospheric pressure, the electrical resistivity of the glasses is below the initial pressure by two–three orders of magnitude. Under normal conditions, both the volume and the electrical resistivity relax to quasi-equilibrium values in several months. Comparative structural and Raman spectroscopy investigations demonstrate that the glasses subjected to high pressure have the maximum chemical order. The glasses with a higher order have a lower electrical resistivity. The polyamorphism in the As₂Te₃ glasses is caused by both structural changes and chemical ordering. The g-As₂Te₃ compound is the first example of glasses, where the reversible metallization under pressure has been studied under hydrostatic conditions.     

Observation of phase separation in some Se-Te-Sn chalcogenide glasses

Differential scanning calorimeter (DSC) and X-ray diffraction (XRD) techniques were employed here to investigate the glass transition behavior and crystallization kinetics of Se_80−x Te₂₀Sn_x (x=0.0, 2.5 and 5) alloys, which were prepared by the conventional melt quenching method. Two exothermic peaks have been observed in the DSC scans for the samples that contain Sn. Three crystalline phases (Se_7.68Te_0.32, SnSe and SnTe) were classified after heat treating the Se_77.5 Te₂₀Sn_2.5 glass at temperature corresponding to the second crystallization peaks for 3 h. All the characteristic temperatures such as glass transition temperature (T_g), crystallization temperature (T_c) and crystallization peak temperatures (T_p) were found to depend on both the heating rate and the composition. This dependence has been used to deduce the activation energy of the glass transition (E_g), the activation energy of crystallization (E_c), the Avrami exponent (n), thermal stability and the fragility index (F_i).     

TEP anomalies in metglas 2204

The thermoelectric power and resistivity of the metallic glass Ti₅₀Be₄₀Zr₁₀ has been studied up to 700°C and 23 kbar pressure encompassing the two-step crystallization process. The important findings of this experimental work are that while TEP exhibits marked anomalies near the glass transition temperature and the two crystallization temperatures, the resistivity shows no perceptible anomaly near the second crystallization temperature. Further the effect of pressure on TEP has been observed to be negligible while resistivity decreases smoothly by about three percent over a 20 kbar pressure interval. These results are analysed on the basis of a modified formulation of the Ziman-Faber theory.     

Surface and bulk crystallization of amorphous alloys Ni-Si-B probed by electrical resistivity

Electrical resistivity measurements are tested as a sensitive probe of the crystallization processes in amorphous metallic alloys of Ni₇₈Si₇B₁₅, rendering the determination of nucleation rates at the surface and in bulk. It is shown that the increase in the electrical resistivity just below the crystallization temperature is mainly due to nucleation phenomena. Moreover, the Avrami coefficient, calculated from resistivity data, provides information about types of crystallization mechanisms, dimensionality of the crystallite growth and the sequence of crystallization stages.     

Giant magnetoresistance in the Ge-rich magnetocaloric compound,Gd5(Si0.1Ge0.9)4

We have measured the zero-field electrical resistivity in the temperature range 5–295 K and magnetoresistance in magnetic fields of up to 12 T of Gd₅(Si_0.1Ge_0.9)₄. The resistivity changes drastically at the magnetostructural first-order transition (T_C≅80 K on heating). This transition can be induced reversibly by the application of an external magnetic field above T_C, producing a concomitant giant magnetoresistance (GMR) effect, Δρ/ρ≅−50%. This study demonstrates that (in addition to giant magnetocaloric and magnetoelastic effects) GMR can be tuned between ∼20 and ∼290 K in Gd₅(Si_xGe_1−x)₄ with x⩽0.5 by simply adjusting the Si : Ge ratio.     

Pressure-induced electronic and structural transformations in bulk GeSe2 glass

The pressure dependence of the electrical resistivity of bulk GeSe₂ glass shows a semiconductor-to-metal transition at 7 GPa pressure. The high pressure phase is examined using the x-ray diffractometer and is found to be crystalline, with a face-centred cubic structure havinga = 4·06 A. The electrical conductivity has also been studied as a function of temperature at various pressures.     

Thermal kinetics and short range order parameters of Se80X20 (X = Te,Sb) binary glasses

Bulk Se₈₀Te₂₀ and Se₈₀Sb₂₀ glasses were prepared using the melt–quench technique. Differential scanning calorimetry (DSC) curves measured at different heating rates (5 K/min≤α≤50 K/min) and X-ray diffraction (XRD) are used to characterize the as-quenched specimens. Based on the obtained results, the activation energy of glass transition and the activation energy of crystallization (E _g, E _c) of the Se₈₀Te₂₀ glass are (137.5, 105.1 kJ/mol) higher than the corresponding values of the Se₈₀Sb₂₀ glass (106.8, 71.2 kJ/mol). An integer n value (n=2) of the Se₈₀Te₂₀ glass indicates that only one crystallization mechanism is occurring while a non-integer exponent (n=1.79) in the Se₈₀Sb₂₀ glass means that two mechanisms are working simultaneously during the amorphous–crystalline transformations. The total structure factor, S(K), indicates the presence of the short-range order (SRO) and the absence of the medium-range order (MRO) inside the as-quenched alloys. In an opposite way to the activation energies, the values of the first peak position and the total coordination number (r ₁, η ₁), obtained from a Gaussian fit of the radial distribution function, of the Se₈₀Te₂₀ glass are (2.42 nm, 1.99 atom) lower than the corresponding values (2.55 nm, 2.36 atom) of the Se₈₀Sb₂₀ specimens.     

Thickness-dependent electrical and optical properties of Ge8Sb2Te11 thin films

The amorphous Ge₈Sb₂Te₁₁thin films with varying thickness are thermally deposited on well-cleaned glass substrate from its polycrystalline bulk. Absence of any sharp peak confirms the amorphous nature of deposited films. Thickness-dependent electrical and optical properties including dc-activation energy, sheet resistivity, optical band gap, band tailing parameter, etc. of Ge₈Sb₂Te₁₁thin films have been studied. The optical parameters have been calculated from transmission, reflection and absorbance data in the spectral range of 200–1100 nm. It has been found that optical band gap and band tailing parameter decreases with the increase in Ge₈Sb₂Te₁₁thin films thickness. The dc-activation energy and sheet resistivity decreases while the crystallization temperature of the amorphous Ge₈Sb₂Te₁₁ films increases with the increase in thickness of the films. The decrease of the sheet resistivity has been substantiated quantitatively using the classical size-effect theory. These results have been explained on the basis of rearrangements of defects and disorders in the amorphous chalcogenide system.     

Model fitted and model free approaches for crystallization kinetics in Se85Te15-xBix glasses

In this research work, we have described the model-fitted and model free approaches for the study of crystallization kinetics in Se₈₅Te_15-xBi_x chalcogenide glasses. Se₈₅Te_15-xBi_x bulk alloys were synthesized by melt quenching technique. High Resolution X- Ray diffraction (HRXRD) was used to confirm the amorphous nature of prepared alloys. Non-isothermal Differential Scanning Calorimetry (DSC) measurements were done at heating rates of 5, 10, 15, 20 and 25 K/min for crystallization kinetics studies in Se₈₅Te_15-xBi_x glasses. The various characteristic temperatures, such as glass transition (T_g), on-set crystallization (T_c) temperature, peak crystallization temperature (T_p) and melting temperatures (T_m) have been obtained from various DSC thermograms. The activation energies of glass transition (ΔE_t) were calculated by using Kissinger and Moynihan approaches and found to be minimum for Se₈₅Te₁₂Bi₃ chalcogenide glass which indicates that this alloy has maximum probability to jump into a less configurational energy state and has larger stability. The model-free approaches; Kissinger–Akahira–Sunose (KAS), Flynn-Wall-Ozawa (FWO), Tang and Straink (TS) reveal that the activation energy of crystallization varies with crystallization degree and temperature both. This variation shows that amorphous to crystalline phase transformation in Se₈₅Te_15-xBi_x chalcogenide glasses is a complex process with various nucleation and growth mechanisms.     

Electrical properties of MWCNT-composite (Se80Te20)100−xAgx (0 ≤ x ≤ 4) chalcogenide glasses

This article describes the preparation of multi-walled carbon nanotube (MWCNT) chalcogenide glass composite by the melt-quenching technique. MWCNT composite (Se₈₀Te₂₀)_100?xAg_x (0 ≤ x ≤ 4) bulk samples are characterized by the XRD, SEM and EDX. The electrical measurements were carried out in the temperature range of the 308-388 K. Cole–Cole plot has been used to determine the electrical conductivity at room temperature. It has been observed that MWCNT chalcogenide composite have higher value of electrical conductivity than pure glass. The results have been discussed on the basis of increased ionic conductivity (Ag⁺ ions) in MWCNT doped (Se₈₀Te₂₀)_100?xAg_x (0 ≤ x ≤ 4) bulk samples.     

Recovery of electrical resistivity in amorphous pdsi alloys after low temperature neutron irradiation

Measurements of electrical resistivity after low temperature fast neutron irradiation are made for amorphous Pd₈₀Si₂₀ and Pd₈₀Ni₂Sl₁₈ and then Pd₈₀Si₂₀ annealed at 230°C and 360°C, and the isochronal annealing curves are obtained. The resistivity increase of Pd₈₀Si₂₀ annealed at 360°C is about 10 times larger than that of amorphous alloys and no defined annealing stage is observed in amorphous alloys and Pd₈₀Si₂₀ annealed at 360°C. For amorphous Pd₈₀Si₂₀, about 60% of the resistivity increase by irradiation remains after annealing up to room temperature and these are discussed by the structural relaxation.     

Ga30Sb70/Sb80Te20纳米复合多层薄膜的相变特性研究

采用磁控二靶(Ga₃₀Sb₇₀和Sb₈₀Te₂₀)交替溅射方法制备了新型Ga₃₀Sb₇₀/Sb₈₀Te₂₀纳米复合多层薄膜, 对多层薄膜周期中Ga₃₀Sb₇₀层厚度对相变特性的影响进行了研究. 结果表明, 多层薄膜的结晶温度可以通过周期中Ga₃₀Sb₇₀层厚度进行调节, 且随着Ga₃₀Sb₇₀层厚度的增加而升高. Ga₃₀Sb₇₀/Sb₈₀Te₂₀纳米复合多层薄膜的光学带隙随Ga₃₀Sb₇₀层厚度的增加而增大. 采用皮秒激光脉冲抽运光探测技术研究了多层薄膜的瞬态结晶动力学过程, 利用不同能量密度的皮秒激光脉冲可以实现Ga₃₀Sb₇₀/Sb₈₀Te₂₀多层薄膜非晶态和晶态的可逆转变.     

Modification of Properties of Fe28Ni50Si9B13 Metallic Glass During Heat Treatment

The crystallization process of the metallic glass Fe₂₈Ni₅₀Si₉B₁₃ was investigated by DSC, Hall effect, electrical resistivity, and X-ray diffraction methods. It proceeds in two stages. Ni phase is formed at the temperature of 723 K and Ni₃B phase at 773 K. The phase creation is accompanied by an abrupt decrease of the Hall and electrical resistivities and the spontaneous Hall coefficient.     

TEP studies on Fe80B20 under pressure

The amorphous to crystalline transformation in the ferromagnetic metallic glass Fe₈₀B₂₀ has been studied up to 30 kbar pressure and 1000K. A previous study at ambient pressure revealed no change in thermoelectric power (TEP) at the crystallization temperature (T_x) while the resistivity showed a sudden decrease at the same temperature. The present experimental results show a distinct anomaly in TEP at T_x even at ambient pressure. This anomaly gets enhanced under pressure.     

High pressure room temperature and high pressure low temperature resistivity studies on As-Te-Se glasses

Abstract

The electrical resistivity measurements have been carried out on bulk As_xTe_100-x-ySe_y (30 ≤ ′ ≤ 50; 10 ≤ y ≤ 25) glasses up to 8 Gpa pressure, and temperature down to 77 K. All the As-Te-Se glasses are found to exhibit a continuous semiconductor to metal transition under pressure. However, glasses with a mean coordination number Z ≥ 2.4 show an initial plateau in resistivity, followed by a continuous decrease. This behaviour is consistent with the earlier observation on the As-Te glasses and is explained in terms of the changes in the local structure of the chalcogenide glasses with the composition.