一种研究自旋翻转散射效应的新方法

金属中自旋翻转散射长度远长于电子平均自由程,近来关于自旋翻转散射效应的研究主要集中于扩散区域.文章作者提出了一种使用双势垒磁性隧道结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法.这种方法可以从磁电输运性质的测量,得出中间隔离层中的自旋翻转散射效应的温度和偏压关系,进一步可以得出诸如电子平均自由程和自旋翻转散射长度等自旋散射信息,以及中间层的态密度和量子阱信息.     

双势垒磁性隧道结的磁电阻效应及其在自旋晶体管中的应用

利用磁控溅射方法沉积双势垒磁性隧道结多层膜, 其中Al-O势垒层由等离子体氧化1 nm厚的 金属铝膜方式制备，然后采用深紫外光曝光和Ar离子刻蚀技术、微加工制备出长短轴分别为 6和3 μm大小的椭圆形双势垒磁性隧道结（DBMTJ），并在室温和低温下对其自旋电子输运 特性进行了研究. DBMTJ的隧穿磁电阻(TMR)比值在室温和42 K分别达到27％和423％， 结电阻分别为136 kΩ·μm²和175 kΩ·μm²，并在实验中观 察到平行状 态下存在低电阻态及共振隧穿效应，反平行态下呈现高电阻态以及TMR随外加偏压或直流电 流的增加而发生振荡现象. 由此，设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶 体管. 关键词： 双势垒磁性隧道结 隧穿磁电阻 共振隧穿效应 自旋晶体管     

自旋轨道耦合效应及其应用研究

讨论了自旋轨道耦合效应的物理起源,介绍了两种不同性质的自旋轨道耦合效应,具体研究了磁性隧道结中自旋轨道耦合效应对电导的影响.     

AB效应对自旋多端输运的影响

利用紧束缚近似和格林函数方法,研究了AB效应和AB环对电子自旋输运的影响.计算表明,当在AB环的不同位置上连接相同或不同属性的输出端时,在一些能量范围内,由不同的输出端所输出的自旋流的方向是相反的;当固定入射电子的能量时,在同一磁通范围,从两个输出端输出的自旋流属性也是相反的.从而,可以通过控制AB环的结构和环内的磁通在输出端得到不同属性的自旋流. 关键词： 自旋极化输运 量子点 极化率 自旋流     

磁性隧道结自旋极化电子的隧穿特性

铁磁金属间通过中间层的自旋极化电子隧穿产生的磁性耦合,在自旋电子器件中有许多潜在的应用.考虑由一平面磁性势垒层隔开的两铁磁性金属电极构成的磁性隧道结,针对中间层形成的矩形势垒,在近自由电子模型的基础上,计算零偏压下的隧穿电导、自旋极化率和隧穿磁阻比率,分析势垒层特性、分子场强弱、分子场相对取向等对隧道结自旋极化电子隧穿特性的影响.计算结果对自旋电子器件的设计具有一定的指导意义.     

钙钛矿氧化物异质结自旋极化输运机制研究

文章介绍了一个基于弱Hund耦合规则以及载流子漂移扩散机制所提出的关于钙钛矿氧化物p-n异质结构的自旋极化输运机制的物理模型．该理论不仅可以很好地解释由具有负磁阻效应的La0.9Sr0．1MnO3（LSMO）与非磁性的SrNb0.01Ti0.99O3（SNTO）所组成的异质结中所存在的正磁电阻效应，同时揭示了该体系中LSMO在界面区域的载流子与远离界面区域的载流子具有不同的自旋极化方向．这一结果将为理解钙钛矿氧化物异质结及多层膜的自旋极化输运机制开辟了一条新的途径．     

钙钛矿氧化物异质结自旋极化输运机制研究

文章介绍了一个基于弱Hund耦合规则以及载流子漂移扩散机制所提出的关于钙钛矿氧化物p-n异质结构的自旋极化输运机制的物理模型.该理论不仅可以很好地解释由具有负磁阻效应的La0.9Sr0.1MnO3（LSMO）与非磁性的SrNb0.01Ti0.99O3（SNTO）所组成的异质结中所存在的正磁电阻效应,同时揭示了该体系中LSMO在界面区域的载流子与远离界面区域的载流子具有不同的自旋极化方向.这一结果将为理解钙钛矿氧化物异质结及多层膜的自旋极化输运机制开辟了一条新的途径.     

自旋极化扫描隧道显微镜的研究进展

自旋极化扫描隧道显微镜（spin-polarized scanning tunneling microscope,SP-STM）将扫描隧道显微镜（scanning tunneling microscope,STM）的实空间分辨率和对自旋敏感的磁成像技术结合起来,已经成为人们研究纳米磁性物理的最有效工具之一.文章介绍了SP-STM的工作原理及其在低维磁性物理领域的应用和最新进展,如对磁性薄膜、磁性纳米岛、磁性原子及不共线结构的研究等,并对我国在这一领域的研究现状和发展前景进行简要评述.     

自旋极化扫描隧道显微镜的研究进展

自旋极化扫描隧道显微镜(spin-polarized scanning tunneling microscope,SP-STM)将扫描隧道显微镜(scanning tunneling microscope,STM)的实空间分辨率和对自旋敏感的磁成像技术结合起来,已经成为人们研究纳米磁性物理的最有效工具之一.文章介绍了SP-STM的工作原理及其在低维磁性物理领域的应用和最新进展,如对磁性薄膜、磁性纳米岛、磁性原子及不共线结构的研究等,并对我国在这一领域的研究现状和发展前景进行简要评述.     

磁电子学讲座 第五讲 自旋极化输运及隧道巨磁电阻效应

简要回顾了利用量子隧道效应测定铁磁金属传导电子自旋极化率的研究历史．综述了自旋极化电子隧穿效应导致的“铁磁金属／非磁绝缘体／铁磁金属”三层平面型隧道结（简称ＦＭ／Ｉ／ＦＭ隧道结）中的巨磁电阻效应以及“铁磁金属／非磁绝缘体”颗粒膜系统中的隧穿类型巨磁电阻效应的研究进展．     

串型耦合双量子点处于自旋阻塞区时磁输运性质的研究

使用双杂质安德森模型的哈密顿量,从理论上研究了串型耦合双量子点系统处于自旋阻塞区时的磁输运性质,并用主方程近似方法求解了哈密顿量.结果表明,自旋轨道耦合作用导致的双量子点间的自旋反转隧穿能够解除系统的自旋阻塞.同时也研究了超精细相互作用导致的在量子点内自旋反转和双量子点之间的自旋关联对系统的磁输运性质的影响,取得了一些有价值的结果,并对相关的物理问题进行了讨论.     

处理具有任意形状势垒的磁性隧道结中电子输运的一个简单方法

在Slonczewski自由电子模型的基础上,提出了一个可用于处理具有任意形状势垒的磁性隧道结中磁电子输运的简单方法,并以三种常见构形的势垒,即梯形势垒,计入了镜像势的梯形势垒和抛物线势垒为例,讨论了势垒形状对隧穿磁电阻及其随偏压变化的影响. 关键词： 磁性隧道结 隧穿磁电阻 任意形状势垒 非零偏压     

Quantum scattering in the strip: From ballistic to localized regimes

Quantum scattering is studied in a system consisting of randomly distributed point scatterers in the strip. The model is continuous yet exactly solvable. Varying the number of scatterers (the sample length) we investigate a transition between the ballistic and the localized regimes. By considering the cylinder geometry and introducing the magnetic flux we are able to study time reversal symmetry breaking in the system. Both macroscopic (conductance) and microscopic (eigenphases distribution, statistics of S-matrix elements) characteristics of the system are examined. Received: 28 January 1998 / Revised: 16 June 1998 / Accepted: 6 July 1998     

Pseudo spin-valves with Al or Nb as spacer layer: GMR and search for spin switch behaviour

The magnetoresistance of several Ferromagnet/Normal metal/Ferromagnet spin-valve type structures has been investigated using Al as normal spacer layer. A magnetoresistance ratio up to 4.1% at room temperature and 5.7% at 0.3 K is found for the sandwich with both Co layers, while slightly lower signals are found for the structures involving CoFe and NiFe layers. The magnetoresistance dependence for Co/Al/Co, Co/Al/CoFe and Co/Al/NiFe on the spacer layer thickness exhibits the familiar non monotonic behaviour with second peak slightly larger than the one reported for Cu based pseudo spin valves. At cryogenic temperatures, preliminary results on the onset of spin switch effects in Co/Al/Co and the full spin switch effect in Co/Nb/Co are also reported here.     

Magnetic tunnel junction thermocouple for thermoelectric power harvesting

The thermoelectric power generated in magnetic tunnel junctions (MTJs) is determined as a function of the tunnel barrier thickness for a matched electric circuit. This study suggests that lower resistance area product and higher tunnel magnetoresistance will maximize the thermoelectric power output of the MTJ structures. Further, the thermoelectric behavior of a series of two MTJs, a MTJ thermocouple, is investigated as a function of its magnetic configurations. In an alternating magnetic configurations the thermovoltages cancel each other, while the magnetic contribution remains. A large array of MTJ thermocouples could amplify the magnetic thermovoltage signal significantly.     

Pure spin currents generation in magnetic tunnel junctions by means of adiabatic quantum pumping

We study the spin polarized currents generation in a magnetic (ferromagnetic/ferromagnetic) tunnel junction by means of adiabatic quantum pumping. Using a scattering matrix approach, it is shown that a pure spin current can be pumped from one ferromagnetic lead into the adjacent one by adiabatic modulation of the magnetization and the height of the barrier at the interface in absence of external bias voltage. We numerically study the characteristic features of the pure spin current and discuss its behavior for realistic values of the parameters. We show that the generated pure spin current is robust with respect to the variation of the magnetization strength, a very important feature for a realistic device, and that the proposed device can operate close to the optimal pumping regime. An experimental realization of a pure spin current injector is also discussed.     

Spin Polarizations of Electron with Rashba Couplings in T-Shaped Devices: A Finite Element Approach

A generalized finite element formulation is proposed for the study of the spin-dependent ballistic transport of electron through the two-dimensional quantum structures with Rashba spin-orbit interactions (SOI). Thetransmission coefficient, conductance, the total and local polarization are numerically calculated and discussed as the Rashba coefficient, the geometric sizes, and incident energy are changed in the T-shaped devices. Some interesting features are found in the proper parameter regime. The polarization has an enhancement as the Rashba coefficient becomes stronger. The polarization valley is rigid in the regime of the conductance plateaus since the local interference among the polarized multi-wave modes. The Rashba interactions coupling to geometry in sizes could form the structure-induced Fano-Rashba resonance. In the wider stub, the localized spin lattice of electron could be produced. The conductance plateaus correspond to weakpolarizations. Strong polarizations appear when the stub sizes, incident energy, and the Rashba coupling coefficient are matched. The resonances are formed in a wide Fermi energy segment easily.     

Recent progress in perpendicularly magnetized Mn-based binary alloy films

In this article, we review the recent progress in growth, structural characterizations, magnetic properties, and related spintronic devices of tetragonal MnxGa and MnxA1 thin films with perpendicular magnetic anisotropy. First, we present a brief introduction to the demands for perpendicularly magnetized materials in spintronics, magnetic recording, and perma- nent magnets applications, and the most promising candidates of tetragonal MnxGa and MnxA1 with strong perpendicular magnetic anisotropy. Then, we focus on the recent progress of perpendicularly magnetized MnxGa and MnxA1 respec- tively, including their lattice structures, bulk synthesis, epitaxial growth, structural characterizations, magnetic and other spin-dependent properties, and spintronic devices like magnetic tunneling junctions, spin valves, and spin injectors into semiconductors. Finally, we give a summary and a perspective of these perpendicularly magnetized Mn-based binary alloy films for future applications.