Effect of Mn-doping on the electrical properties of Cu2GeSe3

In this work we report the temperature dependence of the resistivity ρ of p-Cu₂GeSe₃ and manganese-doped p-Cu₂GeSe₃ at low temperature. It was found that for a intrinsic sample ρ obeys the Shklovskii-Efros-type variable-range hopping resistivity law in the temperature range from 4 to 63 K. This behaviour is governed by generation of a Coulomb gap Δ=78 meV in the density of localized states. We find a low activation term T₀=0.24 K, which is an indication of a large localization length ξ. For Mn-doped sample a metal-insulator transition (MIT) is observed at T=65 K. On the basis of the Mott criterion for metal-insulator transition, the critical carrier density n_c is determined. From the analysis of resistivity data it is concluded that Mn acts as acceptor impurity.     

Rapid exothermic synthesis of chalcopyrite-type CuInSe2

Chalcopyrite-type CuInSe₂ (CIS) was synthesized from Cu, In and Se powders by a mechanochemical process (MCP) without any additional heating. When the transparent reactor bottle was strongly shaken, the elemental powders underwent an explosive reaction. The reaction generated a large amount of heat accompanied by simultaneous strong light emission. The product was confirmed to be chalcopyrite-type CIS by X-ray powder diffraction analysis. From the results, we categorized that preparation of CIS by MCP is a form of ‘self-propagating high-temperature synthesis’ (SHS) or ‘gasless combustion synthesis’. In ordinary SHS, a reaction is initiated from a sample surface by a heat flux such as a heated wire, electric spark, or laser beam. On the other hand, in the present reaction system (Cu+In+2Se), was naturally ignited only by mechanical stimulation. Following initiation by an external stimulus, the reaction was self continuing via the exothermic heat generated. The reaction mechanism of the preparation of CIS by the MCP is discussed on the basis of present reaction observations and thermochemical data.     

The role of As2O3 on the stability and some physical properties of PbO-Sb2O3 glasses

PbO-Sb₂O₃ glasses added with different concentrations of As₂O₃ (10-55 mol%) were prepared to understand their IR spectra, elastic properties (Young's modulus E, Shear modulus G, microhardness H), optical absorption and dielectric properties (constant ε, loss tan δ, ac conductivity σ_ac over a moderately wide range of frequency and temperature and breakdown strength in air medium at room temperature). Results have indicated that the structure of the PbO-Sb₂O₃-As₂O₃ glass is more rigid when the concentration of As₂O₃ is around 40 mol%.     

Determination of electrical and solar cell parameters of FTO/CuPc/Al Schottky devices

A Schottky structure is fabricated using CuPc sandwiched between fluorinated tin oxide (FTO) and aluminium electrodes. The electrical properties of the device are measured at room temperature. Permittivity of the device is calculated from capacitance measurements. The saturation current density, , diode ideality factor, n=3.02 and barrier height, are determined for the Schottky juction. Reverse bias versus is interpreted in terms of Schottky emission. Solar cell parameters are determined from the J-V characteristics. Power conversion efficiency, η of 0.0024% is obtained for the cell. Band gap energy of the material is determined from UV-visible absorption spectrum.     

Studies of dielectric and impedance properties of KCa2V5O15 ceramics

A polycrystalline sample, KCa₂V₅O₁₅, with tungsten bronze structure was prepared by a mixed-oxide method at low temperature (i.e., at 630 °C). A preliminary structural analysis of the compound showed an orthorhombic crystal structure at room temperature. Surface morphology of the compound was studied by scanning electron microscopy (SEM). Two dielectric anomalies at 131 and 275 °C were observed in the temperature dependency of dielectric response at various frequencies, which may be attributed to the ferroelastic-ferroelectric and ferroelectric-paraelectric transitions, respectively. The nature of variation of the electrical conductivity, and value of activation energy of different temperature regions, suggest that the conduction process is of mixed-type (i.e., ionic-polaronic and space charge generated from the oxygen ion vacancies). The impedance plots showed only bulk contributions, and non-Debye type of relaxation process occurs in the material. A hopping mechanism of electrical transport processes in the system is evident from the modulus analysis. The activation energy of the compound (calculated both from loss and modulus spectrum) is same, and hence the relaxation process may be attributed to the same type of charge carriers.     

Characterization of interface between CuInSe2 and In2O3

CuInSe₂/In₂O₃ structures were formed by depositing CuInSe₂ films by stepwise flash evaporation onto In₂O₃ films, which were grown by DC reactive sputtering of In target in presence of (Ar+O₂) gas mixture. Phase purity of the CuInSe₂ and In₂O₃ films was confirmed by Transmission Electron Microscopy (TEM) studies. X-ray diffraction (XRD) results on CuInSe₂/In₂O₃/glass structures showed sharp peaks corresponding to (112) plane of CuInSe₂ and (222) plane of In₂O_3. Rutherford Backscattering Spectrometry (RBS) investigations were carried out on CuInSe₂/In₂O₃/Si structures in order to characterize the interface between In₂O₃ and CuInSe₂. The results show that the CuInSe₂ films were near stoichoimetric and In₂O₃ films had oxygen deficient composition. CuInSe₂/In₂O₃ interface was found to include a ∼20 nm thick region consisting of copper, indium and oxygen. Also, the In₂O₃/Si interface showed the formation of ∼20 nm thick region consisting of silicon, indium and oxygen. The results are explained on the basis of diffusion/reaction taking place at the respective interfaces.     

Electrical properties of SrBi2(Nb0.5Ta0.5)2O9 ceramics

Aurivillius SrBi₂(Nb_0.5Ta_0.5)₂O₉ (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. Scanning electron microscopy was applied to investigate the grain structure. The XRD studies revealed an orthorhombic structure in the SBNT 50/50 with lattice parameters a=5.522 Å, b=5.511 Å and c=25.114 Å. The dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material. Its occurrence was ascribed to the presence of ionized space charge carriers such as oxygen vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. The temperature dependence of various electrical properties was determined and discussed. The thermal activation energy for the grain electric conductivity was lower in the high temperature region (T>303.6 °C, E_a−ht=0.47 eV) and higher in the low temperature region (T<303.6 °C, E_a−lt=1.18 eV).     

Crystal structure, electronic and transport properties of AgSbSe2 and AgSbTe2

Undoped and p- and n-doped AgSbX₂ (X=Se and Te) materials were synthesized by direct fusion technique. The structural properties were investigated by X-ray diffraction and SEM microscopy. The electrical conductivity, thermal conductivity and Seebeck coefficient have been measured as a function of temperature in the range from 300 to 600 K.To enlighten electron transport behaviours observed in AgSbSe₂ and AgSbTe₂ compounds, electronic structure calculations have been performed by the Korringa-Kohn-Rostoker method as well as KKR with coherent potential approximation (KKR-CPA) for ordered (hypothetical AgX and SbX as well as AgSbX₂ approximates) and disordered systems (Ag_1−xSb_xX), respectively. The calculated density of states in the considered structural cases shows apparent tendencies to opening the energy gap near the Fermi level for the stoichiometric AgSbX₂ compositions, but a small overlap between valence and conduction bands is still present. Such electronic structure behaviour well agrees with the semimetallic properties of the analyzed samples.     

Synthesis of In-doped Ga2O3 zigzag-shaped nanowires and optical properties

In-doped Ga₂O₃ zigzag-shaped nanowires and undoped Ga₂O₃ nanowires have been synthesized on Si substrate by thermal evaporation of mixed powders of Ga, In₂O₃ and graphite at 1000 °C without using any catalyst via a vapor-solid growth mechanism. The morphologies and microstructures of the products were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL). The nanowires range from 100 nm to several hundreds of nanometers in diameter and several tens of micrometers in length. A broad emission band from 400 to 700 nm is obtained in the PL spectrum of these nanowires at room temperature. There are two blue-emission peaks centering at 450 and 500 nm, which originate from the oxygen vacancies, gallium vacancies and gallium-oxygen vacancy pairs.     

Electronic transport and magnetic studies of La1−xCax−0.08Sr0.04Ba0.04MnO3

Lanthanum based mixed valence manganite system La_1−xCa_x−0.08Sr_0.04Ba_0.04MnO₃ (LCSBMO; x=0.15, 0.24 and 0.33) synthesized through the sol-gel route is systematically investigated in this paper. The electronic transport and magnetic susceptibility properties are analyzed and compared, apart from the study of unit cell structure, microstructure and composition. Second order phase transition is observed in all the samples and significant difference is observed between the insulator to metal transition temperature (T_MI) and paramagnetic (PM) to ferromagnetic (FM) transition temperature (T_C). In contrast to the insulating FM behaviour usually observed in La_1−xCa_xMnO₃ (LCMO) for x=0.15, a clear insulator to metal transition is observed for LCSBMO for the same percentage of lanthanum. The temperature dependent resistivity of polycrystalline pellets, when obeying the well studied law ρ=ρ_o+ρ₂T² for T<T_MI, is observed to differ significantly in the values of ρ_o and ρ₂, with the electrical conductivity increasing with x. The variable range hopping model has been found to fit resistivity data better than the small polaron model for T>T_MI. AC magnetic susceptibility study of the polycrystalline powders of the manganite system shows the highest PM to FM transition of 285 K for x=0.33.     

Photocatalytic activity of Nb2O5/SrNb2O6 heterojunction on the degradation of methyl orange

The pure SrNb₂O₆ powders were prepared at 1400 °C by a conventional solid-state method and characterized by X-ray powder diffraction and UV-vis diffuse reflection spectrum. The powders of Nb₂O₅ and SrNb₂O₆ were ball-milled together and annealed to form the Nb₂O₅/SrNb₂O₆ composite. Photocatalytic activities of the composites were investigated on the degradation of methyl orange. The results show that the proportion of Nb₂O₅ to SrNb₂O₆ and the annealing temperature greatly influence the photocatalytic activities of the composites. The best photocatalytic activity occurs when the weight proportion of Nb₂O₅ to SrNb₂O₆ is 30% and the annealing temperature is 600 °C. The tremendously enhanced photocatalytic activity of the Nb₂O₅/SrNb₂O₆ composite compared to Nb₂O₅ or SrNb₂O₆ is ascribed to the heterojunction effect taking place at the interface between particles of Nb₂O₅ and SrNb₂O₆. The powders also show a higher photocatalytic activity than commercial anatase TiO₂.     

Influence of lithium phosphate concentration and temperature on the electrical conduction of (76V2O5-24P2O5)1−X (Li3PO4)X glasses

Characterization of the (76V₂O₅-24P₂O₅)_1−X (Li₃PO₅)_X, where X=0.0,0.01,0.02,0.10 and 0.15, glass has been done using X-ray diffraction and differential thermal analysis (DTA). The dc conductivity of the glass samples was studied over a temperature range from 300 to 593 K. The temperature dependence of dc conductivity shows two regions. One at relatively high temperature range, above θ_D/2, and the other at relatively low temperature range, below θ_D/2. The I-V characteristics of the glasses have been studied as a function of both temperature and Li₃PO₄ content. The I-V characteristics exhibits threshold switching with differential negative resistance. It's found that both the threshold voltage (V_th) and threshold current (I_th) are dependent on the temperature and lithium phosphate concentration.     

Synthesis of earth-abundant Cu2SnS3 powder using solid state reaction

Cu₂SnS₃ (CTS) powder has been synthesized at 200 °C by solid state reaction of pastes consisting of Cu and Sn salts and different sulphur compounds in air. The compositions of the products is elucidated from XRD and only thiourea is found to yield CTS without any unwanted CuS_x or SnS_y. Rietveld analysis of Cu₂SnS₃ is carried out to determine the structure parameters. XPS shows that Cu and Sn are in oxidation states +1 and +4, respectively. Morphology of powder as revealed by SEM shows the powder to be polycrystalline with porous structure. The band gap of CTS powder is found to be 1.1 eV from diffuse reflectance spectroscopy. Cu₂SnS₃ pellets are p-type with electrical conductivity of 10⁻² S/cm. The thermal degradation and metal–ligand coordination in CTS precursor are studied with TGA/DSC and FT-IR, respectively, and a probable mechanism of formation of CTS has been suggested.     

Microstructural, dielectric and spectroscopic properties of Li2O-Nb2O5-ZrO2-SiO2 glass system crystallized with V2O5

Li₂O-Nb₂O₅-ZrO₂-SiO₂ glasses mixed with different concentrations of V₂O₅ were crystallized. The samples were characterized by XRD, SEM and DTA techniques. The SEM pictures indicated that the samples contain well defined and randomly distributed crystal grains. The X-ray diffraction studies have revealed the presence of several crystalline phases in these samples. Optical absorption, ESR and photoluminescence spectral studies on these samples have indicated that a considerable proportion of vanadium ions do exist in V⁴⁺ state in addition to V⁵⁺ state and the redox ratio seems to be increasing with increase in the concentration of crystallizing agent V₂O₅. The infrared spectral studies have pointed out the existence of conventional SiO₄, ZrO₄, NbO₆, VO structural units in the glass ceramic network. The study of dielectric properties suggested a decrease in the insulating character of the glass ceramics with increase in the crystallizing agent. A.C. conductivity in the high temperature region seems to be connected mainly with the polarons involved in the process of transfer from V⁴⁺↔V⁵⁺ ions.     

On the superconductivity in in situ synthesized MgB2 tapes

Single core stainless steel (SS) sheathed MgB₂ tapes have been made by the powder-in-tube (PIT) method using commercial Mg and B powders in two series, one with nominal composition and the other with excess Mg. The electrical resistivity and susceptibility measurements have been carried out to evaluate residual resistivity ratio (RRR), the coherence length ξ(0) and critical current density J_C(T) in these tapes. Detailed structural analysis of the core material has been carried out to correlate the superconducting properties with the crystallinity. In the optimized growth condition the MgB₂ tapes exhibited an estimated J_C of ∼1.4×10⁷ A/m² at 39.45 K in zero field and the zero temperature coherence length is found to be ∼68 Å. MgB₂ tapes fabricated from starting powders having nominal Mg-composition have been shown to exhibit higher J_C than those fabricated from excess magnesium composition of the starting powders. The strained lattice together with the presence of nanosized MgO inclusion having size smaller than the coherence length, are shown to be responsible for the observed higher J_C.     

Epitaxial Cu(In,Ga)S2 thin film solar cells

Epitaxial layers of the quaternary compound Cu(In,Ga)S₂ and the ternary compound CuInS₂ were grown on Si(111) substrates via Molecular Beam Epitaxy. The layers were investigated for their morphological and structural properties using Rutherford backscattering spectroscopy, atomic force microscopy, reflection high-energy electron diffraction and X-Ray diffraction. Furthermore, complete solar cell devices were processed from these layers and their photovoltaic properties were investigated by means of I(U)-curves under illumination. Thus, efficiencies up to η=3.2% were achieved. The comparatively low performance of the solar cell devices is attributed to certain heterogeneities of the samples as a result of the growth process.     

Influence of Co, Ni and Zn substitution for Cu on the structural and superconducting properties of (Hg0.7Cr0.3)Sr2CuO4+δ

The effect of Co, Ni and Zn substitutions for Cu on the phase stability and superconducting properties of (Hg_0.7Cr_0.3)Sr₂CuO_4+δ was investigated. X-ray diffraction (XRD) revealed that both Co and Zn are soluble in the (Hg_0.7Cr_0.3)Sr₂CuO_4+δ material up to about 5% of the Cu content, whereas the solubility of Ni is extended up to 10%. Electrical resistivity and magnetic susceptibility measurements show that the value of the superconducting critical temperature T_c decreases linearly with the impurity content. The depression of T_c indicates that the suppression of the superconductivity in Co- and Ni-substituted samples is much stronger than that in Zn-substituted ones. The residual resistivity scales linearly with the doping level as expected from the impurity scattering due to disorder. Some possible explanations for the stronger suppression of T_c by the Co and Ni substitution than by Zn substitution are provided.     

Temperature dependence of thermoelectric properties of Ni-doped CoSb3

Temperature dependences of the Hall coefficient, Hall mobility and thermoelectric properties of Ni-doped CoSb₃ have been characterized over the temperature range from 20 to 773 K. Ni-doped CoSb₃ is an n-type semiconductor and the conduction type changes from n-type to p-type at around 450 K. The temperature for the transition from n-type to p-type increased with increasing Ni content x. The Seebeck coefficient reaches a maximum value near the transition temperature. The electrical resistivity indicates that Co_1−xNi_xSb₃ is a typical semiconductor when x≤0.03 and a degenerate semiconductor when x>0.03. Thermal conductivity analyses show that the lattice component is predominant at lower temperatures and carrier and bipolar components become large at temperatures higher than the transition temperature. The thermoelectric figure of merit reaches a maximum value close to the transition temperature and the largest value, 4.67×10⁻⁴ K⁻¹ at 600 K, was obtained for x=0.05.     

Structure, thermal and transport properties of PVAc-LiClO4 solid polymer electrolytes

The lithium ion conducting solid polymer electrolytes (SPE) based on PVAc-LiClO₄ of various compositions were prepared by solution casting technique. Structure and surface morphology characterization were studied by X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM) measurements, respectively. Thermal and conductivity behavior of polymer-salt complexes were studied by employing differential scanning calorimetry (DSC) and ac impedance measurements, respectively. XRD and SEM analyses indicate the amorphous nature of the polymer-salt complexes. DSC measurements show decrease in T_g with the increase in LiClO₄ concentrations. The bulk conductivity of the PVAc:LiClO₄ polymer electrolytes was found to vary between 7.6×10⁻⁷ and 6.2×10⁻⁵ S cm⁻¹ at 303 K with the increase in salt concentration. The temperature dependence of the polymer electrolyte complexes appear to obey Arrhenius law.     

Electrical conduction and magnetoelectric effect of (x) BaTiO3 + (1−x) Ni0.92Co0.03Cu0.05Fe2O4 composites in ferroelectric rich region

Particulate composites with composition (x)BaTiO₃+(1−x)Ni_0.92Co_0.03Cu_0.05Fe₂O₄ in which x varies as 1, 0.85, 0.70, 0.55 and 0 (in mol%) were prepared by the conventional double sintering ceramic technique. The presence of two phases viz. ferromagnetic (Ni_0.92Co_0.03Cu_0.05Fe₂O₄) and ferroelectric (BaTiO₃) was confirmed by X-ray diffraction analysis. The dc resistivity and thermo-emf measurements were carried out with variation of temperature. The ac conductivity (σ_ac) measurements investigated in the frequency range 100 Hz to 1 MHz conclude that the conduction in these composites is due to small polarons. The variation of dielectric constant and loss tangent with frequency (20 Hz to 1 MHz) was studied. The static magnetoelectric conversion factor, i.e. dc (dE/dH)_H was measured as a function of intensity of applied magnetic field. The changes were observed in electrical properties as well as in magnetoelectric voltage coefficient as the molar ratio of the constituent phases was varied. A maximum value of magnetoelectric conversion factor of 536.06 μV/cm Oe was observed for the composite with 70% BaTiO₃+30% Ni_0.92Co_0.03Cu_0.05Fe₂O₄ at a dc magnetic field of 2.3 K Oe. The maximum magnetoelectric conversion output has been explained in terms of ferrite-ferroelectric content, applied static magnetic field and resistivity.