Photoluminescence of spark-processed metals

The photoluminescence (PL) properties of spark-processed (sp) metals were systematically investigated. It was found that spark-processing of Cr, Cu, Fe, Mg, and Mn essentially yielded no PL at room temperature in the visible spectral range. In contrast, sp-Ti, Ta, Al, Ni, Mo, and Zn showed strong PL, which is in many respects comparable to sp-Si. It was further found that the PL intensity of the sp metals depends exponentially on the nitrogen concentration, which is contained in the spark-processing ambient (along with oxygen). This behavior was also found for sp-Si. In contrast, the PL intensities for native oxides (containing essentially no nitrogen) is several orders of magnitude smaller than those for sp-metals and the respective PL peaks are situated at higher energies. The results are discussed in the light of the self-trapped exciton model.     

Variation of spark-processing parameters on the photoluminescence properties of spark-processed silicon

Electrical and physical parameters, which influence the photoluminescence (PL) properties of spark-processed silicon (sp-Si), were systematically varied in order to obtain optimal PL emission. Among these parameters are the average spark current, the pulse width of the spark events, the frequency of the pulses, the processing time, the electrode diameter, the distance between the electrodes, the spark-processing environment, and the gas ambient pressure. It was found that for optimal PL emission the processing current needs to be between 20 and 40 mA, and the pulse frequency of the sparks between 10 and 15 kHz. Further, the N₂/O₂ ratio of the processing environment needs to be about 7:3 and the ambient gas pressure and the processing time as large as feasible. The conditions that are favorable for green PL are a small pulse width, a small counter electrode diameter, a small gap between electrodes, a relatively large nitrogen concentration in the processing chamber, and a comparatively large spark frequency. In the opposite cases, a UV/blue PL is predominantly observed. The results are discussed in terms of various thermal effects on the resulting molecules or defects, which are believed to be important for the PL emission.     

Infrared luminescence from spark-processed silicon

The infrared (IR) photoluminescence (PL) emission of spark-processed silicon (sp-Si) was investigated. A broad and strong room temperature PL peak in the 945 nm (1.31 eV) spectral range was observed when sp-Si was excited with an argon laser. This peak is different from the PL commonly reported for anodically etched porous silicon and other silicon-based materials. The PL intensity increases substantially after annealing sp-Si between 350 and 500 °C in air after which it decreases again. The PL wavelength is observed to peak at 1010 nm by annealing sp-Si near 450 °C. It was further found that the most efficient PL occurs for a Si/O ratio of 0.3, for a small spark gap of about 1 mm, and for spark-processing times in the 15-60 min range.A model for the IR PL is proposed which mirrors that for visible PL. Specifically, it is proposed that the electrons which have been pumped by the laser from the ground state into a broad quasi-absorption band (or closely spaced absorption lines between 1.7 and 2.3 eV) revert back to lower IR levels at 1.31 eV by a non-radiative transition from where they revert radiatively to the ground state by emitting the observed 945 nm light.     

Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films

The need of efficient (fast and low consumption) optoelectronic devices has always been the driving force behind the investigation of materials with new or improved properties. To be commercially attractive, however, these materials should be compatible with our current micro-electronics industry and/or telecommunications system. Silicon-based compounds, with their matured processing technology and natural abundance, partially comply with such requirements—as long as they emit light. Motivated by these issues, this work reports on the optical properties of amorphous Si films doped with Fe. The films were prepared by sputtering a Si +Fe target and were investigated by different spectroscopic techniques. According to the experimental results, both the Fe concentration and the thermal annealing of the samples induce changes in their atomic structure and optical-electronic properties. In fact, after thermal annealing at ∼750 °C, the samples partially crystallize with the development of Si and/or β- FeSi₂ crystallites. In such a case, certain samples present light emission at ∼1500 nm that depends on the presence of β- FeSi₂ crystallites and is very sensitive to the annealing conditions. The most likely reasons for the light emission (or absence of it) in the considered Fe-doped Si samples are presented and discussed in view of their main structural-electronic characteristics.     

Simple chemical aqueous synthesis of dahlia nanoflower consisting of finger-like ZnO nanorods and observation of stable ultraviolet photoluminescence emission

In this work, we have reported the synthesis of dahlia flower-like ZnO nanostructures consisting of human finger-like nanorods by the hydrothermal method at 120 °C and without using any capping agent. Optical properties of the samples, including UV–vis absorption and photoluminescence (PL) emission characteristics are determined by dispersing the samples in water as well as in ethanol media. The quenching of PL emission intensity along-with the red shifting of the PL emission peak are observed when the samples are dispersed in water in comparison to those obtained after dispersing the samples in ethanol. It has been found that PL emission characteristic, particularly the spectral nature of PL emission, of the samples remains almost unaltered (except some improvement in UV PL emission) even after thermally annealing it for 2 h at the temperature of 300 °C. Also the synthesized powder samples, kept in a plastic container, showed a very stable PL emission even after 15 months of synthesis. Therefore, the synthesized samples might be useful for their applications in future optoelectronics devices.     

A simple photochemical method to synthesize Ga2O3-Dy-M thin films and their evaluation as optical materials (where M=Cr or Co)

We report the photochemical method to synthesize Ga₂O₃-Dy³⁺-Co³⁺ and Ga₂O₃-Dy³⁺-Cr³⁺ thin films. X-ray photoelectron spectroscopy, X-ray diffraction and photoluminescence were used to characterize the products. These analyses revealed that as-deposited and annealed films are amorphous. The optical characterization of the films showed that these are highly transparent in the visible spectrum but decrease significantly with doped and co-doped films. Under the excitation of UV light (254 nm) the doped films (Ga₂O₃-Dy³⁺) show the characteristic emissions of Dy³⁺ at 500, 575, 594, 605 and 652 nm corresponding to ⁴F_9/2→⁶H_J ( J=15/2, 13/2 and 11/2) transitions but the emissions decrease with the co-doped films (Ga₂O₃-Dy³⁺-M³⁺, where M=Cr or Co); a possible emission mechanism and energy transfer have been proposed.     

A new photoluminescence emission peak of ZnO-SiO2 nanocomposites and its energy transfer to Eu ions

This work reports a new photoluminescence (PL) emission peak at about 402 nm from amorphous ZnO nanoparticles in a silica matrix, and the energy transfer from it to Eu³⁺ ions. The amorphous ZnO-SiO₂ nanocomposites were prepared by the sol-gel method, which is verified by X-ray diffraction (XRD) profiles and FT-IR spectra. The luminescence emission spectra are fitted by four Gauss profiles, two of which at longer wavelength are due to the defects of the material and the others to amorphous ZnO nanoparticles and the Zn-O-Si interface state. With the reduction of Zn/Si ratio and diethanolamine, the relative intensities of visible emission decrease. The weak visible emission is due to the reduction of defects after calcined at high temperature. The new energy state at the Zn-O-Si interface results in strong emission at about 402 nm. When Eu³⁺ ions are co-doped, weak energy transfer from ZnO-SiO₂ nanocomposites to Eu³⁺ emission are observed in the excitation spectra.     

Photoluminescence of ZnO nanowires dependent on O2 and Ar annealing

High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 °C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 °C under oxygen and argon gases have been investigated. After O₂ or Ar annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O₂- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O₂ or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices.     

Comparative structural and photoluminescent study of Eu-doped La2O3 and La(OH)3 nanocrystalline powders

Eu³⁺-doped La₂O₃ nanocrystalline powder was prepared by polymer complex solution method and further used for preparation of Eu³⁺-doped La(OH)₃. Structural and optical characterization was carried out by powder X-ray diffraction and photoluminescent spectroscopy. XRD measurements confirmed the formation of hexagonal La₂O₃ and its recrystallization into La(OH)₃ in a humid atmosphere. Excitation spectra show redshift of host lattice and charge transfer emission bands in La(OH)₃ while bands that correspond to Eu³⁺f–f transitions are placed at same wavelengths in both samples. Photoluminescence spectra recorded over the temperature range from 10 K to 300 K show that intensities of emission lines in Eu³⁺-doped La₂O₃ do not depend on temperature as much as in La(OH)₃ sample. Observed dominant ⁵D₀→⁷F₂ and markedly visible ⁵D₀→⁷F₀ emissions in doped La₂O₃ indicate that Eu³⁺ ion is located in a structural site without an inversion center. On the other hand, in Eu³⁺-doped La(OH)₃⁵D₀→⁷F₀ transition is barely visible while ⁵D₀→⁷F₂ is not prominent, and with temperature drop three ⁵D₀→⁷F_J (J=1, 2, 4) transitions become almost of the same intensity. In both La₂O₃ and La(OH)₃ structures Eu³⁺ ion replaces La³⁺ in non-centrosymmetric C_3v and C_3h crystallographic sites, respectively, and difference in symmetry of the crystal field around europium ion is explained by comparing shape and volume of these sites. Decay times of the ⁵D₀- level recorded over the temperature range 10−300 K revealed that emission lifetime values in La₂O₃ (~0.7 ms) are almost two times higher than in La(OH)₃ (~0.4 ms), and unlike in La₂O₃, lifetime in La(OH)₃ is temperature dependent.     

Evaluation of stoichiometric rare-earth molybdate and tungstate compounds as laser materials

Photoluminescence spectra, photoluminescence decay curves and Raman scattering spectra have been investigated for stoichiometric rare-earth molybdate and tungstate compounds. NaNd(MoO₄)₂ and NaNd(WO₄)₂ show emissions due to the transition ⁴F_3/2→⁴I_9/2 in Nd³⁺. A possibility of laser oscillation in NaNd(MoO₄)₂ is pointed from comparisons of the emission intensity and the decay time constant with NaNd(WO₄)₂ where laser oscillations have been reported. In NaLa(MoO₄)₂ and NaLa(WO₄)₂, observed emissions which are not related to La³⁺ are probably due to the transitions in MoO₄^2- and WO₄^2- molecular ions, respectively, in scheelite crystal. Raman spectra of these compounds are similar, probably related to the same crystal structure. LiEr(MoO₄)₂ shows the emissions due to transitions ²H_11/2→⁴I_15/2, ⁴S_3/2→⁴I_15/2 and ⁴F_9/2→⁴I_15/2 in Er³⁺, respectively, which are believed to be observed for the first time.     

Fluorescent photoswitchable nanohybrids based on photochromism

A new type of fluorescent photoswitchable nanohybrids based on photochromism has been assembled, in which hydrophobic diarylethene and matched fluorescent dye are assembled in the nanoscale crosslinked polymeric matrix via a modified miniemulsion polymerization process and a seeded polymerization technique. The nanohybrids exhibited excellent fluorescent photoswitchable action owing to efficient photoinduced energy transfer whether the nanohybrids as nanoparticles dispersed in water or in a polymer film, and the improved photo-thermal stability of both essential components could be readily achieved. Importantly, our assembling approach is much simpler than the covalent chemical synthesis, and is a general method for other hydrophobic photochromic compounds.     

Effects of Na2CO3 flux addition on the structure and photoluminescence properties for Eu-doped YVO4 phosphor

The luminescence properties of (Y_0.9Eu_0.1)VO₄ phosphor with Na₂CO₃ flux prepared using the solid-state reaction were investigated. The XRD patterns show that all of the peaks are attributed to the YVO₄ phase. The best crystallinity was obtained with 2 wt% Na₂CO₃ flux addition. The surface morphology of (Y_0.9Eu_0.1)VO₄ phosphor changed from fluffy to a bar shape structure after Na₂CO₃ flux addition due to the tetragonal crystal system of YVO₄. The calcined powders emit bright red luminescence centered at 618 nm due to the ⁵D₀→⁷F₂ electric dipole transition under an excitation wavelength of 318 nm; its intensity was increased about 15% with 2 wt% Na₂CO₃ flux addition. Red shift behavior was observed for the charge transfer state (CTS) absorption, which was due to the grain size of (Y_0.9Eu_0.1)VO₄ phosphor increasing with increasing flux content. For 2 wt% Na₂CO₃ flux addition, the red emission of the (Y_0.9Eu_0.1)VO₄ phosphor had CIE chromaticity coordinates of (0.66, 0.34), which are very close to the NTSC system standard red chromaticity coordinates of (0.67, 0.33).     

Combustion synthesis and photoluminescence of Eu, Dy-doped La2Zr2O7 nanocrystals

A facile and energy saving sol-gel combustion method has been used to prepare La₂Zr₂O₇ nanocrystallines. The pyrochlore La₂Zr₂O₇ nanocrystals have been obtained at a relatively low temperature with the grain size ranging from 45 to 70 nm. Eu³⁺ and Dy³⁺ have been introduced into the La₂Zr₂O₇ crystal structure, respectively, and the intense photoluminescence was observed. The relative intensity of electric dipole transition and magnetic dipole transition is considered for luminescence emission both of Eu³⁺ and Dy³⁺. The dependence of luminescence intensity on dopant concentration and the effect of Dy³⁺ co-doping on Eu³⁺ luminescence are also discussed.     

The photoluminescent properties of Eu in MgO-Ga2O3-SiO2 nanocrystalline glass-ceramic

The MgO-Ga₂O₃-SiO₂ glass-ceramic (GC) containing MgGa₂O₄ nanocrystals and glasses doped with Eu³⁺ ions were prepared by the sol-gel method. The down-conversion and up-conversion luminescence (UCL) properties were studied. The results indicated that the relative intensity of f-f transitions of Eu³⁺ decreased in contrast with that of charge transfer (CT) absorption with the increase in heating temperature. Using a Xe lamp and 800 nm femtosecond (fs) laser excitation, strong red luminescence of Eu³⁺ in MgO-Ga₂O₃-SiO₂ glasses and GC was observed.     

Large supercell molecular dynamics study of defect formation in hydrogenated amorphous silicon

We have performed molecular dynamics simulations of the defect formation associated with the Staebler-Wronski (SW) effect in a-Si:H using 224 and 231 atom supercells and employing semiempirical Si-Si and Si-H total energy functionals. The role of hydrogen in the defect formation within the bond breaking model of the SW effect has been investigated for both large supercells. The results suggest that, within this model, H can be important in weakening the normal Si-Si bonds which break to produce defects in the SW effect.     

Some studies about the green and red light emitting structures in NaCl1−xBrx:Mn

In this work we present the results obtained from the luminescence spectra and X-ray diffraction as well as transmission electron microscopy, at room temperature on crystals of NaCl_1−xNaBr_x:MnCl₂:0.3% (x=0.00, 0.05, 0.25, and 0.50). The results suggest the existence of structures between the crystal planes (1 1 1) and (2 0 0), which may be associated with different types of Mn²⁺ arrangements, such as dipole complexes, octahedral and rhombohedral structures as well as other possible nanostructures that include mixtures of bromine/chlorine ions. These are responsible for the emission spectra of “as grown” crystals consisting of maxima around 500 nm and 600 nm. The green emission has been usually attributed to rhombohedral/tetrahedral symmetry sites; the present results point out that this is due to Mn–Cl/Br nanostructures with rhombohedral structure. On the other hand when the crystals are thermally quenched from 500 °C to room temperature the structures previously detected present changes. Only a red band appears around 620 nm if the samples are later annealed at 80 °C.     

Emission analysis of Tb:MgAl2O4 powder phosphor

This paper reports the emission analysis of green-emitting Tb³⁺-doped MgAl₂O₄ phosphors. Uniformity of the phase of the Tb³⁺-doped MgAl₂O₄ phosphor has been checked by X-ray diffraction (XRD) technique and show common bands existing in the results of Fourier transform infrared (FT-IR). This phosphor exhibits weak blue, orange emissions and a strong emission at λ_exci=350 nm. The blue and green-orange emissions are ascribed to ⁵D₃→⁷F_J and ⁵D₄→⁷F_J (where J=3-6) transitions of Tb³⁺ ions, respectively. These phosphors have shown a strong, more prominent green emission from ⁵D₄→⁷F₅ at 543 nm. The results have indicated that MgAl₂O₄:Tb³⁺ could be a potential candidate as agreen-emitting powder phosphor.     

Temperature dependence of impurity quenched luminescence in Tm:LiLuF4

The study of the optical properties of a LiLuF₄ crystal doped with Tm³⁺ yielded the discovery of a strong temperature dependence of the Tm-Tm diffusion coefficient. Spectroscopic characteristics have been investigated as a function of the sample temperature, with particular regard to the luminescence decay following pulsed excitation. An appreciable excitation of the lifetime of the ³F₄ manifold is observed over the temperature range 8.9-298 K. The Judd-Ofelt calculations point out a radiative lifetime considerably longer than the experimental one. These facts suggest a theoretical interpretation based on the presence of impurities that quench the manifold and on a temperature-dependent energy migration between Tm³⁺ ions. A one-parameter best fit of the experimental measurements strongly confirms this hypothesis. Weak OH⁻ ion concentration is detected by means of IR and UV spectra, thus supporting the theoretical interpretation.