Investigation of glassy behaviour of flux grown Pb(Zn1/3Nb2/3)0.91Ti0.09O3 crystal

The glassy behaviour of flux grown single crystal of relaxor based lead zinc niobium titanate near its morphotropic phase boundary has been investigated. The frequency dependence of temperature at dielectric maxima (T′_m), which is governed by the production of polar nano-region at higher temperature, was analysed using different glass models and Power law. Various parameters like activation energy for relaxation, freezing temperature, relaxation frequency, etc. were determined after non-linear curve fitting. Further, the temperature dependence of dielectric constant, at temperatures much higher and lower than T_m, was analysed using two exponential functions to explain the degree of relaxation, production and freezing of polar regions, etc. Various other associated parameters are calculated by non-linear curve fitting and their significance has been explained.     

Dielectric and AC conductivity behavior of BaBi2Nb2O9 ceramics

The complex dielectric and AC conductivity response of BaBi₂Nb₂O₉ relaxor ferroelectric ceramics were studied as a function of frequency (100 Hz-10 MHz) at various temperatures. The observed dielectric behavior was characterized by two types of relaxation processes which were described by the ‘universal relaxation law’. The frequency dependence of conductivity which showed a classical relaxor behavior followed the Jonscher's universal law σ(ω)=σ₀+Aωⁿ. The exponent n exhibited a minimum in the vicinity of temperatures of dielectric anomaly while the pre-factor A showed a maximum. The temperature dependence of n followed the Vogel-Fulcher relation with activation energy of about 0.14 eV.     

Study of relaxor-like behaviour of laser ablated (Pb, La)Tio3 thin films

Lanthanum modified lead titanate (PLT) thin films are one of the potential candidates for the pyroelectric and memory applications due to their excellent dielectric, pyroelectric and ferroelectric properties. PLT thin films with 25 at.% of La were deposited on platinum coated Si substrates by the laser ablation technique. The phase transition studies were done in the temperature range of −40 to 150 °C as a function of frequency and ac field. A diffused phase transition with the shifting of the maximum dielectric permittivity (?_max) to higher temperatures with the increase of frequency and dielectric dispersion with frequency at the lower temperatures were observed. The variation of the temperature corresponding to maximum dielectric constant T_m, with frequency follows the Vogel-Fulcher relation, which is the characteristic of the relaxor-like behavior of the material. With the increase of ac drive, the T_max was shifted to lower value.     

Dielectric spectroscopy on Bi3Zn2Sb3O14 ceramic: an approach based on the complex impedance

The dielectric properties and loss of Bi_1.5ZnSb_1.5O₇ a poor-semiconducting ceramic were investigated by impedance spectroscopy, in the frequency range from 5 Hz to 13 MHz. Electric measurements were performed from 100 to 700 °C. Pyrochlore type phase was synthesized by the polymeric precursor method. Dense ceramic with 97% of the theoretical density was prepared by sintering via constant heating rate. The dielectric permittivity dependence as a function of frequency and temperature showed a strong dispersion at frequency lower than 10 kHz. The losses exhibit slight dependence with the frequency at low temperatures presenting a strong increase at temperatures higher than 400 °C. A decrease of the loss magnitude occurs with increasing frequency. Relaxation times were extracted using the dielectric functions Z″(ω) and M″(ω). The plots of the relaxation times τ_Z′ and τ_M″ as a function of temperature follow the Arrhenius law, where a single slope is observed with activation energy values equal to 1.38 and 1.37 eV, respectively.     

A new, lead free, family of perovskites with a diffuse phase transition: NaNbO3-based solid solutions

(1−x)NaNbO₃-(x)ABO₃ perovskite solid solutions belonging to group II according to the Krainik classification [Izv. Akad. Nauk SSSR, Ser. Phys. 28 (1964) 643] exhibit a dramatic diffusion of the dielectric permittivity ε′ maximum and relaxor-type behavior when the second component concentration exceeds a threshold value x₀. The concentration phase transition to this relaxor-like phase is abrupt (of the first order kind) that is seen from the step in the dependence of the ε′(T) maximum temperature, T_m, on x. Some relaxor-like properties appear even at x<x₀ in the course of cooling while disappear during the course of heating. Due to this fact and because of coupling of the antiferroelectric (AFE) and ferroelectric (FE) order parameters a giant (up to 100 K) temperature hysteresis of ε′(T) arises at AFE-AFE first order phase transition. The T_m values of all the known NaNbO₃-ABO₃ relaxor-type compositions are well below the room temperature and the dielectric permittivity maximal values, ε′_m, are much lower than in the case of Pb-containing relaxors. However both T_m and ε′_m values can be increased substantially by Li or K-doping leading to the formation of NaNbO₃-ABO₃-LiNbO₃ (KNbO₃) solid solutions.     

Relaxor behavior in the (1−x)BaSnO3 - xPbTiO3 solid solution

The relaxor behavior was revealed in the solid solution (1−x)BaSnO₃-xPbTiO₃[(1−x)BSn-xPT] with compositions near x=0.50. The real permittivity (ε^′) and loss tangent (tanδ) exhibit diffuse and dispersive maxima, whose temperature shifts towards a higher temperature upon the increasing frequency. The frequency dependence of the temperature of the dielectric maximum (T_m) follows the Vogel-Fulcher law, as in the canonical relaxor. A deviation from the Curie-Weiss law was observed below the Burns temperature (T_B) and well above the Curie temperature (T_C). These phenomena are well consistent with typical relaxors, which explains the existence of the relaxor behavior in the (1−x)BSn-xPT solid solution.     

Relaxor behavior of (Ba,Sr)(Zr,Ti)O3 ferroelectric ceramics

We examine the ferroelectric-relaxor behavior of (Ba_0.65Sr_0.35)(Zr_0.35Ti_0.65)O₃ (BSZT) ceramics in the temperature range from 80 to 380 K. A broad dielectric maximum, which shifts to higher temperature with increasing frequency, signifies the relaxor-type behavior of these ceramics. The value of the relaxation parameter γ∼2 estimated from the linear fit of the modified Curie-Weiss law, indicates the relaxor nature of the BSZT ceramics. The dielectric relaxation rate follows the Vogel-Fulcher relation with T_VF=107 K, E_a=0.121 eV, and ν₀=6.83×10¹⁴ Hz, further supports such relaxor nature. The slim P-E hysteresis loop and ‘butterfly’ shape dc bias field dependence of permittivity at T>T_m (T_m, the temperature of permittivity maximum) clearly signifies the occurrence of nanopolar clusters, which is the typical characteristic of ferroelectric relaxor. At 300 K and 10 kHz, the dielectric constant and loss tan δ are ∼1100 and 0.0015, respectively. The high tunability (∼25%) and figure of merit (∼130) at room temperature show that the BSZT ceramics could be a promising candidate for tunable capacitor applications.     

The non-isotropic character of electric and dielectric properties of ammonium zinc chloride crystal

The dielectric constant, ε, and the d.c. conductivity, σ, were measured along the a-, b- and c-axes of (NH₄)₂ZnCl₄ (AZC) crystal in the 300-450 K temperature range. Crystals of AZC grown from aqueous solutions containing excess of ZnCl₂ were used. The value of the dielectric permittivity of AZC is extremely small compared to other ferroelectric crystals. Pronounced broad or step-like peaks at the phase transition temperatures were detected along the a- and b-axes, while ε along the c-axis is temperature independent up to the end of the measuring range. Reciprocal of the dielectric permittivity in the range of the commensurate to incommensurate phase transition obeys a relation similar to the Curie-Weiss law that is valid for second order ferroelectric/paraelectric phase transitions. The constants of the proposed relationship applied to the cooling run are given. The J-E characteristics along the three crystallographic axes were measured in the normal, incommensurate, commensurate and antiferroelectric phases. Hence, the type of conduction mechanism has been estimated. Parameters of Poole-Frenkel and Richardson-Schottky types of conduction mechanism have been determined. The effect of applied electric field on the conductivity measurement was also tested. Conductivity anomalies with different character were observed at the phase transition temperatures. The lnσ−1000/T dependence revealed thermal activation energy of conduction along the a-, b- and c-axes with different values in different phases of AZC.     

Relaxor behavior of (Sr,Ba,Bi)TiO3 ferroelectric ceramic

The dielectric behavior of (Sr_0.4Ba_0.6)_0.925Bi_0.05TiO₃ (SBBT) ceramic was investigated in the temperature range from 100 K to 450 K. Broad dielectric maxima, which shift to higher temperature with increasing frequency, and the value of the relaxation parameter γ=1.6-2 estimated from the linear fit of the modified Curie-Weiss law, indicated the relaxor nature of the SBBT ceramic. The dielectric relaxation which follows the Vogel-Fulcher relationship with  K, E_a=0.0392 eV, and ν_o=2.98×10¹¹ Hz, further supports such a relaxor nature. The P-E hysteresis loop at different temperatures and ‘butterfly’ shape dc bias field dependence of permittivity at T>T_m (the temperature of permittivity maximum) signifies the occurrence of nanopolar clusters, which is the typical characteristic of relaxor ferroelectrics. At 300 K and 10 kHz, the dielectric constant and loss tgδ are ∼2210 and 0.00118, respectively. The tunability (28%) and figure of merit (237) at room temperature show that the SBBT ceramic could be a promising candidate for tunable capacitor applications.     

Multiferroic magnetoelectric coupling and relaxor ferroelectric behavior in 0.7BiFeO3-0.3BaTiO3 nanocrystals

The structural, microstructural, polarization, magnetization, dielectric constant, and relaxor characteristics of 0.7BiFeO₃-0.3BaTiO₃ (BF-BT) nanocrystals have been studied. BF-BT nanocrystals were prepared by a chemical route using polyvinyl alcohol as surfactant. The phase structure is confirmed by X-ray diffraction and average particle size by transmission and scanning electron microscopy. The magnetoelectric coupling is studied by polarization hysteresis loops under the influence of applied magnetic field and the phase transition anomaly. The diffuse phase transition is studied by modified Curie-Weiss law and relaxor characteristics by Vogel-Fulcher relation.     

A novel high-k ‘Y5V’ barium titanate ceramics co-doped with lanthanum and cerium

Structural, dielectric, and ferroelectric properties of a novel high-k ‘Y5V’ (Ba_1−xLa_x)(Ti_1−x/4−yCe_y)O₃ ceramics (where x=0.03 and y=0.05, denoted by BL3TC5) with the highest ‘Y5V’ dielectric response (ε′>10 000) among rare-earth-doped BaTiO₃ ceramics to date are investigated in detail using SEM, TEM, XRD, DSC, EPR, Raman spectroscopy (RS), temperature and frequency, electric field dependences of dielectric permittivity (ε′), and temperature and electric field dependences of ferroelectric hysteresis loops. The BL3TC5 diffusion of ferroelectric phase transition occurs around dielectric peak temperatures (T_m) near a room temperature characteristic of dielectric thermal relaxation. Powder XRD data and defect complex model were given. “Relaxor” behavior associated with an order/disorder model and formation of a solid solution were discussed. The EPR results provided the evidence of Ti vacancies as compensating for lattice defects. High-k relaxor nature of BL3TC5 is characterized by an average cubic structure with long-range lattice disordering and local polar ordering; a slow change of the ε′ (T) and P_r(T) curves around T_m; no phase transition observed by DSC; and a broad, red-shifted A₁ (TO₂) Raman phonon mode at 251 cm⁻¹ accompanying the disappearance of the “silent” mode at 305 cm⁻¹ and a clear anti-resonance effect at 126 cm⁻¹ at room temperature.     

Pressure and temperature dependence of the static dielectric constant of KBr

The static dielectric constant and the temperature and pressure derivatives of the static dielectric constant of KBr have been measured at several temperatures between 4·3°K and room temperature. The sample was prepared in the form of a three-terminal parallel-plate capacitor and the dielectric constant was determined from measurements of the capacitance with a high precision bridge. The dielectric constant decreases with temperature as does the magnitude of the temperature dependence and the magnitude of the pressure dependence. The data were used to calculate the fixed-volume temperature derivative of the dielectric constant. This quantity, (? ln ε/?T)_v, exhibiting lattice-anharmonicity effects, decreases slightly from its room temperature value as the temperature is lowered, rises to a maximum value at about 33°K and then decreases rapidly at lower temperatures.     

Electrical conduction and dielectric properties of vanadium phosphate glasses doped with lithium

AC conductivity and dielectric studies on vanadium phosphate glasses doped with lithium have been carried out in the frequency range 0.2-100 kHz and temperature range 290-493 K. The frequency dependence of the conductivity at higher frequencies in glasses obeys a power relationship, σ_ac=Aω^s. The obtained values of the power s lie in the range 0.5≤s≤1 for both undoped and doped with low lithium content which confirms the electron hopping between V⁴⁺ and V⁵⁺ ions. For doped glasses with high lithium content, the values of s≤0.5 which confirm the domination of ionic conductivity. The study of frequency dependence of both dielectric constant and dielectric loss showed a decrease with increasing frequency while they increase with increasing temperature. The results have been explained on the basis of frequency assistance of electron hopping besides the ionic polarization of the glasses. The bulk conductivity increases with increasing temperature whereas decreases with increasing lithium content which means a reduction of the V⁵⁺.     

Relaxation and conductivity behaviour in the compounds: FeRGe2O7 (R=Pr,Tb)

AC measurements were performed on the thortveitite-like layered compounds, FeRGe₂O (R=Pr,Tb) in order to study their dielectric features, e.g. as a function of temperature. The main electrical response lies on impedance plots composed of two successive arcs with depressed centers. Bulk conductivity behavior is mostly Arrhenius for the measured temperatures. The associated bulk activation energies are close to 1 eV. Raw data were used to follow the temperature dependence of the dynamic parameters, ε′(ω) and σ′(ω). From logarithmic σ′(ω) vs. ω curves the dc component was obtained. ε′(ω) vs. log ω curves exhibit a dispersive behavior at low frequencies, reflecting blocking effects. E_dc and E_ac activation energies were also calculated, the last one obtained from σ′(ω) vs. 1000/T plots. Conductivity results suggest the occurrence of an extrinsic conducting mechanism. A structural instability was detected via the temperature dependence of permittivity, which has been ascribed to the presence of Ga-O-Ga bonds having associated angles different of 180°. Analyses of the results show that the interchange of Tb and Pr in the general formula FeRGe₂O₇ (R=Pr, Tb) involves only small differences in their global ac and dc behavior.     

Ferroelectric relaxor behaviour in Pb(Fe0.5Ta0.5)O3

The relaxor ferroelectric lead iron tantalate, Pb(Fe_0.5Ta_0.5)O₃ (PFT) is synthesized by Coulombite precursor method. The X-ray diffraction pattern of the sample at room temperature shows a cubic phase. The field dependence of dielectric response is measured in a frequency range 0.1 kHz — 1 MHz and in a temperature range from 173–373 K. The temperature dependence of permittivity (ɛ′) shows broad maxima at various frequencies. The frequency dependence of the permittivity maximum temperature (T _m ) has been modelled using Vogel-Fulcher relation.      

Predominant factors affecting the dielectric and piezoelectric properties of bismuth-containing complex perovskite solid solution

To study the factors affecting the dielectric and piezoelectric properties of bismuth-containing complex perovskites, the solid solution (1−x)Pb(Mg_1/3Nb_2/3)O₃-xBi(Mg_2/3Nb_1/3)O₃ was prepared by the solid state reaction method and its dielectric and piezoelectric properties were investigated. It is found that (1) at room temperature, the nonlinearity of the DE-loop for Pb(Mg_1/3Nb_2/3)O₃ is completely suppressed at a rather low x (<5%); (2) dielectric constant versus temperature curves deviate from the Curie-Weiss law at a temperature T_d much higher than the dielectric constant peak temperature T_m and T_m−T_d decreases considerably with increasing x; and (3) frequency dispersion ΔT_m=T_m (1 MHz)−T_m (10 kHz) increases with increasing x. Possible factors responsible for the variation of the dielectric and piezoelectric properties with x are discussed.     

On the correlation between order parameter, superconducting volume fraction and critical current density in R: 123 superconductors

Resistivity and low field ac susceptibility measurements are made on R: 123 superconducting samples with different rare earth elements R. The order parameter dimensionality OPD is deduced from resistivity versus temperature plot using the Aslamazov and Larkin expression, while the analysis of the temperature dependence of ac susceptibility is done employing Beans’ critical state model and with the help of the Ravi expression. With increasing R, the critical temperatures T_c are nearly kept constant (∼90 K), while the crossover temperatures T_o are shifted to lower values. Moreover, the superconducting order parameter OPD is shifted toward 2D behavior. On the other hand, the values of superconducting volume fraction f_g decrease with increasing ac field amplitude H_m for all samples and it is higher in Er: 123 sample than in Nd: 123 sample. Although the values of critical current density J_c at the peak temperature T_m are nearly unchanged with increasing R, the values of J_c(T), at T<T_m and T>T_m, are found to be dependent on the chosen R. The correlation between the above calculated parameters against R is also mentioned.     

弛豫型铁电体铌镁酸铅陶瓷的玻璃化行为研究

钛酸铅与铌镁酸铅组成比为1:9的固溶体陶瓷是典型的弛豫型铁电体,其介电行为与偶极玻璃的介电行为极为相似,并已将玻璃学中的Vogel-Fulcher关系用于处理其介电常数峰值温度与频率的关系。本文测定了其介电行为随温度的变化,对其微观局域极化行为进行了分析,讨论了其局域极化的产生、增大及冻结过程,研究了弛豫型铁电体与Debye介质、玻璃体的关系和区别。在此基础上,提出了一个更合理的函数关系式,用以表征其介电常数峰值温度与频率的关系,并得出其介电弛豫激活能为0.037eV。实际应用表明,对于弛豫型铁电体,该函数关系较原有Vogel-Fulcher关系更有效。 关键词：     

Relaxor behaviour in PZN-PT-BT ferroelectric ceramics

The relaxor behaviour of the (Pb_0.8Ba_0.2)[(Zn_1/3Nb_2/3)_0.7Ti_0.3]O₃ ferroelectric ceramic is presented. A strong dispersion of the maximum of the dielectric permittivity (ε′) below the transition temperature (T_m) is observed, which shift towards higher temperatures with increasing frequency. There is a strong deviation from the Curie-Weiss law. The results are fitted by using the Volger-Fulcher relationship, showing typical behaviour of a spin glass system. The hysteresis loops suggest relaxor behaviour.     

Leakage current, ferroelectric and structural properties in Pb1−xBaxTiO3 thin films prepared by chemical route

Single-phase perovskite structure Pb_1−xBa_xTiO₃ thin films (x=0.30, 0.50 and 0.70) were deposited on Pt/Ti/SiO₂/Si substrates by the spin-coating technique. The dielectric study reveals that the thin films undergo a diffuse type ferroelectric phase transition, which shows a broad peak. An increase of the diffusivity degree with the increasing Barium contents was observed, and it was associated to a grain decrease in the studied composition range. The temperature dependence of the phonon frequencies was used to characterize the phase transition temperatures. Raman modes persist above tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of breakdown of the local cubic symmetry by chemical disorder. The absence of a well-defined transition temperature and the presence of broad bands in some interval temperature above FE-PE phase transition temperature suggested a diffuse type phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in these thin films. The leakage current density of the PBT thin films was studied at different temperatures and the data follow the Schottky emission model. Through this analysis the Schottky barrier height values 0.75, 0.53 and 0.34 eV were obtained to the PBT70, PBT50 and PBT30 thin films, respectively.