Study of structural, transport and magneto-resistive properties of La0.7Ca0.3−xCexMnO3 (0≤x≤0.2)

We have synthesized a series of La_0.7(Ca_0.3−xCe_x)MnO₃ (0≤x≤0.2) by standard solid-state reaction method. X-ray diffraction (XRD) measurement was carried out for structural studies and Rietveld refinement was done for structural analysis. The transport properties were studied using four probe technique. The temperature dependence of the resistivity was measured in the temperature range of 20 K to room temperature. It is found that all samples show a systematic variation in metal to insulator transition at transition temperature (T_P) and resistivity (ρ) with the relative concentration of hole and electron doping in the system. The samples showed varying amounts of colossal magnetoresistance depending upon temperature and applied magnetic field. The magnetoresistance values as high as 72% were observed in x=0 sample.     

Structural,electrical transport,and magnetic properties of Ni1−xZnxFe2O4

Structural, electrical, and magnetic properties of Ni_1−xZn_xFe₂O₄ (x=0.2, 0.4) samples sintered at various temperatures have been investigated thoroughly. The bulk density of the Ni_0.8Zn_0.2Fe₂O₄ samples increases as the sintering temperature (T_s) increases from 1200 to 1300 °C and above 1300 °C the bulk density decreases slightly. The Ni_0.6Zn_0.4Fe₂O₄ samples show similar behavior of changes to that of Ni_0.8Zn_0.2Fe₂O₄ samples, except that the bulk density is found to be the highest at 1350 °C. The DC electrical resistivity, ρ(T)$\rho (T)$, decreases as the temperature increases indicating that the samples have semiconductor-like behavior. As the Zn content increases, the Curie temperature (T_c), resistivity, and the activation energy decrease while the magnetization, initial permeability, and the relative quality factor (Q) increases. A Hopkinson peak is obtained near T_c in the real part of the initial permeability vs. temperature curves. The ferrite with higher permeability has a relatively lower resonance frequency. The initial permeability and magnetization of the samples has been found to correlate with density, average grain sizes. Possible explanation for the observed structural, magnetic, and changes of resistivity behavior with various Zn content are discussed.     

Oxygen vacancy doping effect on the electrical and magnetic behavior of Ba5−xLaxNb4−xTixO15

We report electric and magnetic properties of oxygen deficient Ba_5−xLa_xNb_4−xTi_xO_15−δ phases, which have been prepared by solid-state reaction method followed by a controlled reduction process under hydrogen atmosphere. The extra electrons added by the formation of the oxygen vacancies (δ) introduce localized spins and the magnetic susceptibility can be described by a temperature-independent contribution and a Curie-Weiss term associated to the Ti³⁺ ion formation. Besides, the experimental resistivity (ρ) data of these four reduced compounds are well described in a wide temperature range with the equation , which suggests the presence of small polarons in the system. Although, all samples present electrical insulating behavior, the electrical resistivity decreases four orders of magnitude for intermediate x values. We interpreted this fact as a consequence of the mix between the localized bands of the Nb and Ti ions, which favors the promotion of carriers due to reduction of the band gap.     

Large room temperature magnetoresistance in YSZ doped La0.67Ba0.33MnO3 composite

The temperature dependence of the resistivity for composite samples of (1−x)La_0.67Ba_0.33MnO₃+xYSZ(LBMO/YSZ) with different YSZ doping level of x has been investigated in a magnetic field range of 0-7000 Oe, where the YSZ represents yttria-stabilized zirconia (8 mol% Y₂O₃+92 mol% ZrO₂). With increasing YSZ doping level, the range of 0-10%, the metal-insulator transition temperature (T_P) decreases. However, the resistivity, specially the low temperature resistivity, increases. Results also show that the YSZ doping level has an important effect on a low field magnetoresistance (LFMR). In the magnetic field of 7000 Oe, a room temperature magnetoresistance value of 20% was observed for the composite with a YSZ doping level of 2%, which is encouraging for potential application of CMR materials at room temperature and low field.     

Influence of vacancies on the electrical properties of the ZnCr2−xNixSe4 spinels

The effect of vacancies on the electronic transport in the ZnCr_2−xNi_xSe₄ paramagnetic single crystals is considered. For this purpose, the structure refinements, the high temperature electrical conductivity and the thermoelectric power measurements as well as the calculations of the vacancy model parameters were used. The electrical measurements have been done in the temperature range from 290 to 520 K for single crystals with x=0.001, 0.05, and 0.065. The above investigations provide evidence for polaron conduction in defective spinel materials. In particular: (1) at high temperatures a linear dependence between thermopower S and the electrical resistivity (ln ρ), a characteristic of small polarons, was observed, (2) an origin of small polarons in this case could be associated with a crystalline distortion, which is characterized by larger values of the anion parameter than u=0.375, which describes an ideal spinel structure, and (3) a large defectiveness, which is identified by the large value of the vacancy parameter of about β=11.5%. These effects are explained in terms of a polaron mechanism of the electrical conductivity including structural defects.     

Ferromagnetic semiconductor Ge1−x−ySnxMnyTe with phase transformation of ferroelectric type

It is expected that joint existence of ferromagnetic properties and ferroelectric structural phase transition in diluted magnetic semiconductors IV-VI leads to new possibilities of these materials. Temperature of ferroelectric transition for such crystals can be tuned by the change of Sn/Ge ratio. Magnetic susceptibility, Hall effect, resistivity and thermoelectric power of Ge_1−x−ySn_xMn_yTe single crystals grown by Bridgeman method (x=0.083-0.115; y=0.025-0.124) were investigated within 4.2-300 K. An existence of FM ordering at T_C∼50 K probably due to indirect exchange interaction between Mn ions via degenerated hole gas was revealed. A divergence of magnetic moment temperature dependences at T?T_C in field-cooled and zero-field-cooled regimes is obliged to magnetic clusters which are responsible for superparamagnetism at T>T_C≈T_f (freezing temperature) and become ferromagnetic at T_C arranging spin glass state at T<T_f≈T_C. Phase transition of ferroelectric type at T≈46 K was revealed. Anomalous Hall effect which allows to determine magnetic moment was observed.     

Effect of Mn-doping on the electrical properties of Cu2GeSe3

In this work we report the temperature dependence of the resistivity ρ of p-Cu₂GeSe₃ and manganese-doped p-Cu₂GeSe₃ at low temperature. It was found that for a intrinsic sample ρ obeys the Shklovskii-Efros-type variable-range hopping resistivity law in the temperature range from 4 to 63 K. This behaviour is governed by generation of a Coulomb gap Δ=78 meV in the density of localized states. We find a low activation term T₀=0.24 K, which is an indication of a large localization length ξ. For Mn-doped sample a metal-insulator transition (MIT) is observed at T=65 K. On the basis of the Mott criterion for metal-insulator transition, the critical carrier density n_c is determined. From the analysis of resistivity data it is concluded that Mn acts as acceptor impurity.     

Resistivity and susceptibility near the QCP in disordered UCu5−xNix

The question of whether the temperature dependences of the magnetic susceptibility and the electrical resistivity of UCu_5−xNi_x near, and away from, the QCP where T_N is suppressed to T = 0 are due to intrinsic fluctuations or are dominated by disorder effects is addressed. The interesting ρ ∝ log T behavior below 2 K present for 0.75 ? x ? 1.1 is analyzed and discussed.     

Transport properties and magnetoresistance in CoNb1−xMnxSb half-Heusler alloys with a low temperature localization

The transport properties and magnetoresistance of half-Heusler CoNb_1−xMn_xSb (x=0.0-1.0) alloys have been investigated between 2 and 300 K. In this temperature range, a metallic conductivity has been observed for the alloys with higher (x=1.0) and lower (x=0.0-0.2) Mn contents. However, the middle Mn content alloys (x=0.4-0.8) exhibit non-metallic conductive behavior. Their temperature dependence of resistivity undergoes a Mott localization law ρ=ρ₀exp(T₀/T)^p (p=1/4) rather than a thermal excitation regime ρ=ρ₀exp(E_a/kT) at low temperature (). The localization can be attributed to atomic and magnetic disorder. Resistivity peaks from 25 to 300 K were also observed for these alloys. Magnetotransport investigation reveals that these resistivity peaks result from localization effect as well as spin-disorder scattering.     

Electrical behavior of nano-polycrystalline (La1−yKy)0.7Ba0.3MnO3 manganites

We present a study of the structural and electrical behavior of nano-polycrystalline mixed barium and alkali substituted lanthanum-based manganite, (La_1−yK_y)_0.7Ba_0.3MnO₃ with y=0.0-0.3. The samples were synthesized by the polymerization complex sol-gel method. The powder X-ray diffraction (XRD) data of the samples show a single-phase character with space group. The magnetic and electrical transport properties of the nano-polycrystalline samples have been investigated in the temperature range 50-300 K and a magnetic field up to 10 kOe. The metal-insulator transition temperature T_p of all the samples decreased with potassium doping, and also, it increased slightly with the application of magnetic field. The low field magnetoresistance, which is absent in the single-crystalline perovskite, was observed and increased with decreasing temperature. Comparing the experimental resistivity data with the theoretical models shows that the high temperature electrical behavior of these samples is in accordance with the adiabatic small polaron-hopping model. In the metal-ferromagnetic region the resistivity is found to be quite well described by ρ=ρ₀+ρ₂T²+ρ_4.5T^4.5.     

Electronic transport and magnetic studies of La1−xCax−0.08Sr0.04Ba0.04MnO3

Lanthanum based mixed valence manganite system La_1−xCa_x−0.08Sr_0.04Ba_0.04MnO₃ (LCSBMO; x=0.15, 0.24 and 0.33) synthesized through the sol-gel route is systematically investigated in this paper. The electronic transport and magnetic susceptibility properties are analyzed and compared, apart from the study of unit cell structure, microstructure and composition. Second order phase transition is observed in all the samples and significant difference is observed between the insulator to metal transition temperature (T_MI) and paramagnetic (PM) to ferromagnetic (FM) transition temperature (T_C). In contrast to the insulating FM behaviour usually observed in La_1−xCa_xMnO₃ (LCMO) for x=0.15, a clear insulator to metal transition is observed for LCSBMO for the same percentage of lanthanum. The temperature dependent resistivity of polycrystalline pellets, when obeying the well studied law ρ=ρ_o+ρ₂T² for T<T_MI, is observed to differ significantly in the values of ρ_o and ρ₂, with the electrical conductivity increasing with x. The variable range hopping model has been found to fit resistivity data better than the small polaron model for T>T_MI. AC magnetic susceptibility study of the polycrystalline powders of the manganite system shows the highest PM to FM transition of 285 K for x=0.33.     

Structure, magnetic, and transport properties of the Co-doped manganites La0.9Te0.1Mn1−xCoxO3 (0≤x≤0.25)

The effect of Co doping at Mn-site on the structural, magnetic and electrical transport properties in electron-doped manganties La_0.9Te_0.1Mn_1−xCoxO₃ (0≤x≤0.25) has been investigated. The room temperature structural transition from rhombohedra to orthorhombic (Pbnm) symmetry is found in these samples with x≥0.20 by the Rietveld refinement of X-ray powder diffraction patterns. All samples undergo the paramagnetic-ferromagnetic (PM-FM) phase transition. The Curie temperature T_C of these samples decreases and the transition becomes broader with increasing Co-doping level. The magnetization magnitude of Co-doping samples increases at low temperatures with increasing Co-doping level for x≤0.15 and decreases with increasing Co-doping content further. The metal-insulator (M-I) transitions observed in the sample with x=0 are completely suppressed with Co doping, and the resistivity displays semiconducting behavior within the measured temperature region for these samples with x>0. All results are discussed according to the changes of the structure parameters and magnetic exchange interaction caused by Co-doping. In addition, the different effects between the Co doping and Cu doping in the Mn site for the electron-doped manganites are also discussed.     

The effect of annealing process on the physical properties of La1−xNaxMnOy

The effect of Na doping and annealing time on the structure, electrical properties, magnetoresistance and thermopower properties has been investigated in perovskite La_1−xNa_xMnO_y (x=0.025, 0.075 and 0.1) systems. La_1−xNa_xMnO_y crystallizes in a single-phase rhombohedral structure. It is observed a simultaneous occurrence of the ferromagnetic to paramagnetic state and metallic to insulating state. In the meanwhile, a large negative magnetoresistance with low applied magnetic field is observed. In addition, ρ(T) curves for Na-doped samples exhibit another broad transition T_ms2 below T_ms. Such double peak behavior in the ρ(T) curve interpreted by the electronic inhomogeneity in the samples. The sign of S changes from positive to negative depending on composition. The values of Seebeck coefficient are small (in the microvolt range).     

Structural, magnetotransport and morphological studies of Sb-doped La2/3Ba1/3MnO3 ceramic perovskites

We report here the structural, magnetotransport and morphological studies of Sb-doped La_2/3Ba_1/3Mn_1−xSb_xO₃ perovskite manganites. Pristine material La_2/3Ba_1/3MnO₃ (LBMO) shows two insulator-metal (I-M) transitions in the electrical resistivity-temperature (ρ-T) behavior. While the higher temperature transition (T_P1) at ∼340 K is reminiscent of the usual I-M transition in manganites, the lower temperature transition (T_P2) at ∼250 K has been ascribed to the grain boundary (GB) effects arising out of the ionic size mismatch between the ions present at the rare-earth site (La³⁺ and Ba²⁺). With Sb-doping T_P1 shifts to lower temperatures while T_P2 remains invariant up to 3% and shifts to lower temperature for 5%. Room temperature electrical resistivity and the peak values also increase successively with Sb-doping. Scanning electron micrographs of the samples exhibit a gradual increase in their grain sizes with Sb indicating a gradual decrease in the GB density. Shift of T_P1 with doping is explained on the basis of a competition between double-exchange and super-exchange mechanisms. The overall electrical resistivity increases and the shift in the electrical resistivity hump (T_P2) with Sb-doping is found related to be gradually decreasing GB density and the ensuing lattice strain increase at the GBs. The intrinsic magnetoresistance (MR) gets suppressed and extrinsic MR gets enhanced with Sb-doping. At T>T_P1, the electrical resistivity is found to follow the adiabatic polaron hopping model whereas the electron-magnon scattering is found to dominate in the metallic regime (T<T_P1).     

Structural,magnetic and electrical properties of Co1−xZnxFe2O4 synthesized by co-precipitation method

Nanoparticles of Co_1−xZn_xFe₂O₄ with stoichiometric proportion (x) varying from 0.0 to 0.6 were prepared by the chemical co-precipitation method. The samples were sintered at 600 °C for 2 h and were characterized by X-ray diffraction (XRD), low field AC magnetic susceptibility, DC electrical resistivity and dielectric constant measurements. From the analysis of XRD patterns, the nanocrystalline ferrite had been obtained at pH=12.5–13 and reaction time of 45 min. The particle size was calculated from the most intense peak (3 1 1) using the Scherrer formula. The size of precipitated particles lies within the range 12–16 nm, obtained at reaction temperature of 70 °C. The Curie temperature was obtained from AC magnetic susceptibility measurements in the range 77–850 K. It is observed that Curie temperature decreases with the increase of Zn concentration. DC electrical resistivity measurements were carried out by two-probe method from 370 to 580 K. Temperature-dependent DC electrical resistivity decreases with increase in temperature ensuring the semiconductor nature of the samples. DC electrical resistivity results are discussed in terms of polaron hopping model. Activation energy calculated from the DC electrical resistivity versus temperature for all the samples ranges from 0.658 to 0.849 eV. The drift mobility increases by increasing temperature due to decrease in DC electrical resisitivity. The dielectric constants are studied as a function of frequency in the range 100 Hz–1 MHz at room temperature. The dielectric constant decreases with increasing frequency for all the samples and follow the Maxwell–Wagner's interfacial polarization.     

Magnetic properties of half-metallic semi Heusler Co1−xCuxMnSb compounds

A study of the half-metallic character of the semi Heusler alloys Co_1−xCu_xMnSb (0?x?0.9) is presented. We investigated the saturation magnetization M_S at temperatures from 5 K to room temperature and the temperature dependence of the DC magnetic susceptibility χ above Curie temperature T_C. The magnetic moments at 5 K, for most compositions are very close to the quantized value of 4 μ_B for Mn³⁺ ion, the compound with 90% Co substituted by Cu is still ferromagnetic with M_S (5 K)=3.78 μ_B/f.u. These results emphasize the role of Co atoms in maintaining the ferromagnetic order in the material. The Curie temperature is decreased from 476 K to about 300 K as the Cu content increases from 0% to 90%. Above T_C, the χ⁻¹ vs T curves follow very well the Curie–Weiss law. The effective moment μ_eff and paramagnetic Curie temperature θ are derived. A comparison between the values of M_S at 5 K and μ_eff shows a transition from localized to itinerant spin system in these compounds.