Fabrication of porous BaSnO3 hollow architectures using BaCO3@SnO2 core-shell nanorods as precursors

We present a strategy to synthesize porous BaSnO₃ hollow architectures with that were 150-300 nm in diameter and 1.5-5 μm in length using precursor of BaCO₃@SnO₂ nanorods prepared by hydrothermal treatment. BaCO₃@SnO₂ nanorods, consisting of a BaCO₃ core and a SnO₂ shell, could be used effectively for the solid-state synthesis of polycrystalline BaSnO₃ powder at 800 °C (lower than convention for BaCO₃ and SnO₂ mixtures). The core/shell structure of the precursor could play a role as a structural directing template for preparing BaSnO₃ hollow architectures during the calcination process. The X-ray diffractometer (XRD), scanning electron microscope (SEM), and transmission electron microscope (TEM) are employed to characterize the structures and morphologies. When applied to DSSC, the porous BaSnO₃ hollow architectures exhibit distinct photovoltaic effect.     

Magnetic properties of thick multiferroic hexagonal HoMnO3 films

Multiferroic hexagonal HoMnO₃/YSZ(1 1 1) films with a thickness of ?1 μm have been grown by pulsed laser deposition. Conventional X-ray diffraction and pole figure measurement indicate that the film is epitaxially grown without secondary phase or misorientation. Magnetization measurements reveal some differences in comparison with a single crystal. These differences are possibly related to the larger a and c lattice parameters of the film which are likely to alter the bond lengths and, thus, the magnetic superexchange interactions. A substantial change of the complex Ho³⁺ magnetic ordering below 6 K is observed.     

Pre-annealing and magnetic induction in inhibitor-free 3% Si–Fe strips

Effects of pre-annealing and hydrogen flow rate on final texture and magnetic induction have been investigated in inhibitor-free 100 μm thick 3% Si–Fe strips containing 18 ppm sulfur. Without any pre-annealing, the strip showed a low magnetic induction, due to various {1 1 0}, {1 0 0} and {1 1 1} final texture components. The number and the area fraction of {1 1 0} grains increased with increasing pre-annealing temperature and hydrogen flow rate. A pre-annealing temperature range that results in the sharp {1 1 0} 〈0 0 1〉 texture is observed, depending on the hydrogen flow rate.     

Designing of endlessly single mode polarization maintaining highly birefringent nonlinear micro-structure fiber at telecommunication window by FV-FEM

An endlessly single mode highly polarization maintaining nonlinear microstructure fiber at telecommunication window is reported via full-vector finite element method. By taking three ring hexagonal PCF with suitable fiber parameter such as air hole diameter in cladding region d = 0.8 μm, pitch 2.3 μm and introducing four symmetrical large air holes near core region d′ = 2 μm, single mode (V_eff ≤ π), small effective mode area 2.7 μm², nonlinear co-efficient 44.39 W⁻¹ km⁻¹, high phase birefringence of the order of 10⁻³ and group birefringence of the order of 10⁻⁴ with beat length 0.3 μm at wavelength 1.55 μm are achieved.     

The p/π ratio pT dependence in the RHIC range of baryo-chemical potential

The BRAHMS measurement of proton-to-pion ratios in Au+Au and p+p collisions at $ \sqrt {s_{NN} } $ \sqrt {s_{NN} } = 62.4 GeV and $ \sqrt {s_{NN} } $ \sqrt {s_{NN} } = 200 GeV is presented as a function of transverse momentum and collision centrality within the pseudorapidity range 0 ≤ η ≤ 3. The baryo-chemical potential, μ _B , for the indicated data spans from μ _B ≈ 26 MeV ($ \sqrt {s_{NN} } $ \sqrt {s_{NN} } 200 GeV, η ≈ 0) to μ _B ∼ 260 MeV ($ \sqrt {s_{NN} } $ \sqrt {s_{NN} } = 62.4 GeV, η ≈ 3) [1]. The p/πratio measured for Au+Au system at $ \sqrt {s_{NN} } $ \sqrt {s_{NN} } 62.4 GeV, η ≈ 3 reaches astounding value of 8–10 at p _T > 1.5 GeV/c. For these energy and pseudorapidity interval no centrality dependency of p/π ratio is observed. Moreover, the baryon-to-meson ratio of nucleus-nucleus data are consistent with results obtained for p+p interactions.     

Molecular dynamics simulation of femtosecond ablation and spallation with different interatomic potentials

Fast heating of target material by femtosecond laser pulse (fsLP) with duration τ_L∼40-100 fs results in the formation of thermomechanically stressed state. Its unloading may cause frontal cavitation of subsurface layer at a depth of 50 nm for Al and 100 nm for Au. The compression wave propagating deep into material hits the rear-side of the target with the formation of rarefaction wave. The last may produce cracks and rear-side spallation. Results of MD simulations of ablation and spallation of Al and Au metals under action fsLP are presented. It is shown that the used EAM potentials (Mishin et al. and our new one) predict the different ablation and spallation thresholds on absorbed fluence in Al: ablation F_a=60{65} mJ/cm²and spallation F_s=120{190} mJ/cm², where numbers in brackets { } show the corresponding values for Mishin potential. The strain rate in spallation zone was 4.3×10⁹ 1/s at spallation threshold. Simulated spall strength of Al is 7.4{8.7} GPa, that is noticeably less than 10.3{14} GPa obtained from acoustic approximation with the use of velocity pullback on velocity profile of free rear surface. The ablation threshold F_a≈120 mJ/cm² and crater depth of 110 nm are obtained in MD simulations of gold with the new EAM potential. They agree well with experiment.     

On the thermal stability of Co2Z hexagonal ferrites for low-temperature ceramic cofiring technologies

Co₂Z hexaferrite Ba₃Co₂Fe₂₄O₄₁ was prepared by a mixed oxalate co-precipitation route and the standard ceramic technology. XRD studies show that at T<1300 °C different ferrite phases coexist with the M-type hexaferrite as majority phase between 1000 and 1100 °C and the Y-type ferrite at 1230 °C. The Z-type material has its stability interval between 1300 and 1350 °C. Both synthesis routes result in almost single-phase Z-type ferrites after calcination at 1330 °C, intermediate grinding and sintering at 1330 °C. The permeability of Co₂Z-type ferrite of about μ=20 is stable up to several 100 MHz, with maximum losses μ′′ around 700 MHz. Addition of 3 wt% Bi₂O₃ as sintering aid shifts the temperature of maximum shrinkage down to 950 °C and enables sintering of Z-type ferrite powders at 950 °C. However, the permeability is reduced to μ=3. It is shown here for the first time that Co₂Z ferrite is not stable under these conditions; partial thermal decomposition into other hexagonal ferrites is found by XRD studies. This is accompanied by a significant decrease of permeability. This shows that Co₂Z hexagonal ferrite is not suitable for the fabrication of multilayer inductors for high-frequency applications via the low-temperature ceramic cofiring technology since the material is not compatible with the typical process cofiring temperature of 950 °C.     

A novel strategy to synthesize cobalt hydroxide and Co3O4 nanowires

Cobalt hydroxide ultra fine nanowires were prepared by a facile hydrothermal route using hydrogen peroxide. This method provides a simple, low cost, and large-scale route to produce β-cobalt hydroxide nanowires with an average diameter of 5 nm and a length of ca. 10 μm, which show a predominant well-crystalline hexagonal brucite-like phase. Their thermal decomposition produced highly uniform nanowires of cobalt oxide (Co₃O₄) under temperature 500 °C in the presence of oxygen gas. The produced cobalt oxide was characterized by X-ray diffraction, transmission electronic microscopy, and selected-area electron diffraction. The results indicated that cobalt oxide nanowires with an average diameter of 10 nm and a length of ca. 600 nm have been formed, which show a predominant well-crystalline cubic face-centered like phase.     

Structural and magnetic properties of SrFe12O19 hexaferrite synthesized by a modified chemical co-precipitation method

M-type strontium hexaferrite (SrFe₁₂O₁₉) particles had been prepared by a modified chemical co-precipitation route. Structural and magnetic properties were systematically investigated. Rietveld refinement of X-ray powder diffraction results showed that the sample was single-phase with the space group of P6₃/mmc and cell parameter values of a=5.8751 Å and c=23.0395 Å. The results of field-emission scanning electronic microscopy showed that the grains were regular hexagonal platelets with sizes from 2 to 4 μm. The composition determined by energy dispersive spectroscopy is the stoichiometry of SrFe₁₂O₁₉. The ferrimagnetic to paramagnetic transition was sharp with Curie temperature T_C=737 K, which further confirmed that the samples were single phase. However, it was found that the coercivity, saturation magnetization and the squareness ratio of the synthesized SrFe₁₂O₁₉ samples were lower than the theoretical values, which could be explained by the multi-domain structure and the increase of the demagnetizing factor.     

Enhanced field emission from Si doped nanocrystalline AlN thin films

Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 °C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E_to) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm² has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.     

Growth of textured nonstoichiometric MoTe2 films from Mo/Te layers and their use as precursor in the synthesis of MoTe2−xSx films

Molybdenum ditelluride, MoTe₂, thin films have been prepared on a glass substrate by depositing first a layer of Mo of 1 μm thickness by rf sputtering and then layers of tellurium of 4 μm thickness followed by annealing, in a vacuum sealed Pyrex tube, at 823 K for one hour. The films have been studied by X-ray diffraction, electron microprobe analysis, scanning electron microscopy and for optical and electrical properties. This indicated that the films so prepared are well crystallized and textured with a hexagonal structure similar to 2H-MoS₂. However, the film is non stoichiometric due to the presence of small amounts of oxygen. The optical properties are in good agreement with those of single crystals and film deposited by other means. The room temperature conductivity is of the same order of magnitude as that of single crystals. Finally, MoTe₂ has been used as a precursor for the growth of MoTe_2−xS_x films.     

Substrate orientation-induced distinct ferromagnetic moment in Co:ZnO films

Dilute (3.8 at.%) cobalt-doped ZnO thin films are deposited on LiTaO₃ (LT) substrates with three different orientations [LT(1 1 0), LT(0 1 2) and LT(0 1 8)] by direct current reactive magnetron co-sputtering. The experimental results indicate that Co atoms with 2+ chemical valence are successfully incorporated into the ZnO host matrix on various oriented substrates, and the substrate orientations have a profound influence on the crystal growth and magnetization of Co:ZnO films. A large magnetic moment of 2.42μ_B/Co at room temperature is obtained in the film deposited on LT(0 1 2), while the corresponding values of the other films deposited on LT(1 1 0) and LT(0 1 8) are 1.21μ_B/Co and 0.65μ_B/Co, respectively. Furthermore, the crystal growth mode of Co:ZnO films on various oriented LT, the relationship between the microstructures and corresponding ferromagnetic properties are also discussed.     

Influence of complexing agent on the electrodeposited Co-Pt-W magnetic thin films

Complexing agents are often used to improve the quality of electrodeposited alloys. Influence of different complexing agents with hydroxycarboxylic acid group on the electrodeposited Co-Pt-W thin films has been investigated. Cathodic polarization curves show that the polarization behaviors of electroplating bath with different complexing agents are very different. Surface morphology, phase composition and magnetic properties are observed by means of FESEM, XRD and vibrating sample magnetometer (VSM), respectively. It has been found out that, if citrate was used as complexing agent, the Co-Pt-W thin films were homogeneous and the granular crystals with the average grain size of 2 μm have been observed. Co-Pt-W thin films exhibited hexagonal close packed (hcp) lattice and strong perpendicular anisotropic magnetic behavior (H_c⊥ = 215.5 kA/m; H_c∥ = 55.4 kA/m). In the presence of gluconate, needle-like deposits were obtained and a strong face centered cubic (fcc(1 1 1)) texture was measured. The Co-Pt-W thin films showed isotropic magnetic behavior. In the case of tartate and malate, the coexistence of needle-like deposits and cellular deposits appeared. The XRD patterns showed that the mixed fcc and hcp phase formed. Perpendicular anisotropic magnetic behaviors of thin films, from malate or tartate baths, were not obvious.     

3D atom probe study of gas adsorption and reaction on alloy catalyst surfaces II: Results on Pt and Pt-Rh

The 3-dimensional atom probe (3DAP) is a unique instrument providing chemical analysis at the atomic scale for a wide range of materials. A dedicated 3DAP has been built specifically for analysing reactions at metal surfaces, called the catalytic atom probe (CAP). This paper presents an overview of results from the CAP on structural and chemical transformations to surface layers of Pt and Pt-17.4 at.%Rh catalysts following exposure to a number of gases typically emitted by vehicle engine exhausts, normally for 15 min at pressures of 10 mbar. Following exposure to the oxidising gases NO on Pt, and NO, O₂ or N₂O on Pt-Rh, both surfaces appear disrupted, while for Pt-Rh, Rh enrichment of the surface atomic layer is noted over the entire specimen apex for exposure temperatures up to 523 K. However, for oxidising exposures at 573-773 K relatively clean, Rh-depleted surfaces are observed on {0 0 1}, {0 1 1} and {0 1 2} crystallographic regions of Pt-Rh. It is suggested that this result is due to surface diffusion of oxide species over the specimen apex, towards the {1 1 1}-orientated areas where the oxides appear to be stabilised. In contrast, CO exposure appears to have little effect on the either the surface structure or composition of the Pt-Rh alloy. Finally, combinations of two gases (NO + CO, O₂ + NO) were also dosed onto Pt-Rh alloys in the same exposure. These revealed that while NO and CO can co-adsorb without interference, CO prevents the build up of oxide layers and reduces the extent of Rh segregation seen under NO exposure alone. On exposing Pt-Rh to NO after an oxygen exposure, heavily oxidised surfaces, Rh segregation and no intact NO molecules were seen, confirming the ability of oxidised Pt-Rh to dissociate nitric oxide.     

Observation of triangle pits in PbSe grown by molecular beam epitaxy

PbSe thin films on BaF₂ (1 1 1) were grown by molecular beam epitaxy with different selenium beam flux. Evolution of PbSe surface morphologies with Se/PbSe beam flux ratio (R_f) has been studied by atomic force microscopy and high-resolution X-ray diffraction. Growth spirals with monolayer steps on PbSe surface are obtained using high beam flux ratio, R_f ≥ 0.6. As R_f decreases to 0.3, nano-scale triangle pits are formed on the surface and the surface of PbSe film changes to 3D islands when R_f = 0. Glide of threading dislocations in 〈1 1 0〉{1 0 0}-glide system and Pb-rich atom agglomerations are the formation mechanism of spiral steps and triangle pits. The nano-scale triangle pits formed on PbSe surface may render potential applications in nano technology.     

A facile method to the cube-like MnSe2 microcrystallines via a hydrothermal process

A convenient hydrothermal process was applied to prepare the cube-like MnSe₂ microcrystallines through the reaction of MnSO₄·H₂O with Se and NaH₂PO₂·H₂O in aqueous solution at 160 °C for 12 h. Powder X-ray diffraction (XRD) analysis confirmed that the product was the cubic phase of MnSe₂ with cell parameter a=6.440 Å. The chemical composition of the MnSe₂ was determined by XPS. The Raman spectrum of MnSe₂ presented the peaks of the Se-Se stretching mode at 232.44 and 266.58 cm⁻¹. The images of scanning electron microscope (SEM) and transmission electron microscope (TEM) showed the cube-like morphology of the product with the edge length ranging from 20 to 30 μm. The formation mechanism of the MnSe₂ microcrystallines was discussed as well.     

Fabrication and electrical characterization of ZnO rod arrays/CuSCN heterojunctions

ZnO rod arrays/CuSCN heterojunctions are fabricated by depositing ZnO rod arrays films using two-step chemical bath deposition (CBD) and CuSCN thin films using successive ionic layer adsorption and reaction (SILAR) on ITO substrate successively. The structures and morphologies of ZnO films and CuSCN films, analyzed by X-ray diffraction (XRD) spectroscopy and metallurgical microscope, show that ZnO films are hexagonal wurtzite structure and consisted of vertical polycrystalline rods with diameter of 1 μm, CuSCN films are β-phase structure and consisted of elongated grains with length of 3 μm. Current–voltage (I–V) measurements of ZnO/CuSCN heterojunctions show good diode characteristics with rectification ratio about 48.3 at 3 V. The forward conduction is, respectively, determined by carrier recombination in the space charge region, defect-assisted tunneling and exponential distribution trap-assisted space charge limited current mechanism with the increase of forward voltage. Also, a band diagram of ZnO/CuSCN heterojunctions has been proposed to explain the transport mechanism.     

Growth of highly-oriented CaCu3Ti4O12 thin films on SrTiO3 (1 0 0) substrates by a chemical solution route

Highly-oriented CaCu₃Ti₄O₁₂ (CCTO) thin films deposited directly on SrTiO₃ (1 0 0) substrates have been developed successfully using a chemical solution coating method. X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were employed to characterize the structure and the morphology. It was observed that the CCTO thin films had the 1 μm × 1 μm domain-like microstructure that consists of compact grains of about 0.1 μm in size. The cross sectional SEM image shows that the CCTO grains grow regularly close to the clear interface between the CCTO film and the SrTiO₃ substrate. The result was discussed in terms of lattice mismatch between CCTO and SrTiO₃.     

From crystalline V2O5 to nanostructured vanadium oxides using aromatic amines as templates

Nanoneedles, nanorods of B-VO₂, and vanadium oxide nanotubes with high crystallinity were synthesized via a one-step hydrothermal treatment using crystalline V₂O₅ as a precursor and aromatic amines (C₆H₅-(CH₂)_n-NH₂ with n=0, 1, 3) as structure-directing templates. Samples were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray powder diffraction (XRD), thermal analysis, nitrogen adsorption/desorption isotherms and infrared spectroscopy. Nanoneedles, 0.5-5 μm in length and about 50 nm in average diameter and VO₂(B) nanorods about 20-100 nm wide and up to 2.5 μm long, have been obtained. The inner and the outer diameters of the vanadium oxide nanotubes vary, respectively, between 15-25 and 70-100 nm with a length up to 4 μm.     

Effect of growth time on the structure, Raman shift and photoluminescence of Al and Sb codoped ZnO nanorod ordered array thin films

Al and Sb codoped ZnO nanorod ordered array thin films have been deposited on glass substrate with a ZnO seed layer by hydrothermal method at different growth time. The effect of growth time on structure, Raman shift, and photoluminescence (PL) was studied. The thin films at growth time of 5 h consist of nanorods growth vertically oriented with ZnO seed layer, and the nanorods with an average diameter of 27.8 nm and a length of 1.02 μm consist of single crystalline wurtzite ZnO crystal and grow along [0 0 1] direction. Raman scattering analysis demonstrates that the thin films at the growth time of 5 h have great Raman shift of 15 cm⁻¹ to lower wavenumber and have low asymmetrical factor Г_a/Г_b of 1.17. Room temperature photoluminescence reveals that there is more donor-related PL in films with growth time of 5 h.