Electronic conductivity of mechanochemically synthesized nanocrystalline Ag1−x Cu x I system using DC polarization technique

A study of electronic conductivity using the DC polarization technique has been carried out for AgI and Ag_1−x Cu _x I (where x=0.05, 0.15, 0.25) solid solutions over a range of temperatures from 300 K to 473 K. A diode-like current-voltage characteristics arises from microscopic p-n junctions an enhanced electronic conductivity of the order of 10⁻³A is observed for undoped AgI and Cu-doped AgI. Activation energies (E _a) for electronic conductivity obtained from log σ (Ω⁻¹ cm⁻¹) vs. 1000/T (K⁻¹) were 0.48, 0.6, 0.74 and 1.01 eV for AgI, Ag_0.95Cu_0.05I, Ag_0.85Cu_0.15I and Ag_0.75Cu_0.25I solid solutions respectively. The near-twofold increase in activation energy (1.01 eV) observed upon 25% Cu doping is due to the substantial concentration of current carriers/holes injected by Cu while replacing Ag⁺ in AgI. Based in part on the paper presented at first National Conference on Nanoscience and Technology, National Chemical Laboratory, Pune, 7–8 March 2005.     

Crystal growth,electrical and photophysical properties of Tl<Subscript>2</Subscript>S layered single crystals

The Tl₂S compound was prepared in a single crystal form using a special local technique, and the obtained crystals were analysed by X-ray diffraction. For the resultant crystals, the electrical properties (electrical conductivity and Hall effect) and steady-state photoconductivity were elucidated in this work. The electrical measurements extend from 170 to 430 K, where it was found that σ _⊥ = 8.82 × 10⁻⁵ Sm⁻¹ when current flow direction makes right angle to the cleavage plane of the crystals. In the same range of temperatures, it was found that σ _‖ = 4.73 × 10⁻⁵ Sm⁻¹ when the current flow is parallel to the cleavage plane. In line with the investigated range of temperatures, the widths of the band gaps were calculated and discussed as also the results of the electrical conductivity and Hall effect measurements. In addition, the anisotropy of the electrical conductivity (σ _⊥/σ _‖) for the obtained crystals was also studied in this work. Finally the photosensitivity was calculated for different levels of illumination as a result of the photoconductivity measurements, which showed that the recombination process in Tl₂S single crystals is a monomolecular process.      

AgNbO3 dispersed Ag2SO4 composite for potentiometric SO2 gas sensor application

Composite electrolytes of Ag₂SO₄ is prepared by dispersing fine particles, average particle size <40 microns (350 mesh), of ferroelectric AgNbO₃ in varying weight fraction. Enhancement in the conductivity is observed in β-phase of host system. The effect of dispersion on the conductivity, activation energy and transition temperature is studied as a function of weight % of the dispersoid in the host. Two distinct conduction mechanisms, viz. conduction through electrolyte bulk in parallel with conduction along the inter-grain interaction layer (R _b ^‖ ‖R_∞) and perpendicular to the interface (R _b ^⊥ ) could be resolved in the frequency range of 5 Hz to 13 MHz at temperatures below 300 °C. The interface interaction is found to be nucleophilic increasing the concentration of Ag⁺ vacancies at the interface. Potentiometric SO₂ gas sensors are tested with this composite electrolyte as an auxiliary phase. Paper presented at the 2nd International Conference on Ionic Devices, Anna University, Chennai, India, Nov. 28–30, 2003.     

Trap-centers of self-interstitials in silicon

Deep-level profiles were measured radially acrossn-type FZ silicon wafers containing A-swirl defects by applying DLTS to an array of Schottky contacts. The trapparameters were obtained very accurately using a computer-fit procedure for the full DLTS peaks. Two acceptor levels atE _c −0.49 eV (σ _n =6.6×10⁻¹⁶cm²) andE _c −0.07 eV (σ _n =4.6×10⁻¹⁶cm²) were observed, which varied oppositely to the A-swirl defect density. At short ranges (1–2mm) the trap concentration-profile was smeared out and did not follow the strong fluctuations in the etch pattern. Both levels were measured together with the same concentration. The profiles indicate outdiffusion. A level atE _c −0.14 eV (σ _n =1.1×10⁻¹⁶cm²) was not related to A-swirl defects. A level atE _c −0.11 eV (σ _n =1.1×10⁻¹⁵cm²) was only detected in one ingot. The properties of the deep level atE _c −0.49 eV are discussed in the light of published DLTS results reported for γ-irradiation, laser annealing after self-implantation, annealing under pressure and oxidation of silicon samples. It is concluded, that this level is related to interstitial silicon rather than to an impurity.     

Nonlinear dynamics of vortices pinned to unidirectional twins

The nonlinear resistive properties of superconductors in the mixed state in the presence of a system of unidirectional planar defects (twins) have been investigated theoretically within the framework of the two-dimensional stochastic model of anisotropic pinning based on the Fokker-Planck equations with a concrete form of the pinning potential. These equations allow one to obtain an exact analytical solution of the problem. Formulas are obtained for experimentally observable even and odd (relative to reversal of the direction of the external magnetic field) nonlinear longitudinal and transverse magnetoresistivities ρ _‖,⊥ ^± ( j,t,α,ε) as functions of the transport current density j, temperature t, the angle α between the directions of the current and the twins, and the relative volume fraction ε occupied by the twins. In light of the great variety of types of nonlinear resistive dependences contained in these expressions for ρ _‖,⊥ ^± the most characteristic of them are presented in the form of graphs with commentary. The desired nonlinear dependences ρ _‖,⊥ ^± are linear combinations of the even and odd parts of the function v(j,t, α,ε), which has the sense of the probability of overcoming the potential barrier of the twins; this makes it possible to give a simple physical treatment of the nonlinear regimes. New scaling relations for the Hall conductivity are obtained and investigated which differ from the previously known relations for isotropic pinning. The interaction of vortex motion directed along the twins and the Hall effect is considered for Hall constants which are arbitrary in magnitude and sign, and it is shown that in the case of small Hall viscosity vortex motion directed along the twins has an effect on the odd magnetoresistivities ρ _‖ ⁻ and ρ _⊥ ⁻ , whereas the reverse effect can be neglected. It is shown that pinning anisotropy is sufficient to manifest the new nonlinear (in the current) magnetoresistivities ρ _⊥ ⁺ and ρ _‖ ⁻ . Zh. éksp. Teor. Fiz. 116, 2103–2129 (December 1999)     

Anisotropy of permittivity of the hexagonal multiferroic HoMnO<Subscript>3</Subscript> in the spectral range 0.6–5.0 eV

The anisotropy of the optical properties of a single crystal of the hexagonal manganite HoMnO₃ has been investigated by spectroscopic ellipsometry in the spectral range 0.6–5.0 eV. It has been demonstrated that the optical absorption edge for the polarization E ⊥ c is determined by the intense narrow transition O(2p) → Mn(3d) centered at 1.5 eV, whereas this transition for the polarization E ‖ c is strongly suppressed and shifted toward higher energies by 0.2 eV. It has been revealed that, at the temperature T = 293 K, the spectra for both polarizations E ‖ c and E ⊥ c exhibit a broad absorption band centered at ∼2.4 eV, which was earlier observed in nonlinear spectra during optical second harmonic generation.     

Effect of mixed glass formers on the crystallization kinetics in AgI–Ag<Subscript>2</Subscript>O–V<Subscript>2</Subscript>O<Subscript>5</Subscript>–MoO<Subscript>3</Subscript> glassy superionic system

The crystallization and glass transition kinetics using differential scanning calorimetry (DSC) in 50AgI–33.33Ag₂O–16.67[(V₂O₅)_1−x –(MoO₃) _x ] superionic glassy system is discussed. Thermal stability of glass, studied using various criteria, does not vary significantly with glass former variation. However, the activation energies for structural relaxation (E _s) at glass transition temperature and crystallization (E _c) obtained using Moynihan and Kissinger, Matusita-Sakka formulations found to exhibit interesting trends with MoO₃ substitution in the glass matrix. It is noticed that the electrical conductivity (σ)–temperature (T) cycles obtained at a typical heating rate of 1 °C/min do exhibit significant thermal events. The conductivity after first heating cycle at room temperature is found to be increasing with MoO₃ content and maximum for x = 0.3 (~10⁻³ Ω⁻¹ cm⁻¹ at 30 °C) which is comparable to that of the host 50AgI–33.33Ag₂O–16.67V₂O₅ glassy system. The parameters obtained from σ–T plots and DSC scans do complement each other in a particular range of composition.     

Quasi-one dimensional electrical conductivity and thermoelectric power studies on a discotic liquid crystal

We have studied the electrical conductivity of well aligned samples of hexahexylthiotriphenylene (HHTT) in the pure as well as doped states. The dopant used was a small concentration (0.62 mole %) of the electron acceptor trinitrofluorenone (TNF). In the columnar phases, doping causes the AC(1 kHz) conductivity along the columnar axis (σ _‖) to increase by a factor of 10⁷ or more relative to that in undoped samples; σ _‖ attains a value of 10⁻²S/m, which was the maximum measurable limit of our experimental set up. On the other hand, in the isotropic phase doping makes hardly any difference to the conductivity. The frequency dependence of the conductivity has been investigated. The DC conductivity of doped samples exhibits an enormous anisotropy, σ _‖/σ _⊥ ≥ 10¹⁰, which is 7 orders higher than that reported for any liquid crystalline system, and, to our knowledge, the largest observed in an organic conductor. We also report the first thermoelectric power studies on these ‘molecular wires’. The sign of the thermoelectric power is in conformity with the expected nature of the charge carriers, namely, holes.     

Positron scattering from hydrocarbons

The total cross sections for positron impact on hydrocarbons have been calculated using the additivity rule in which the total cross section for a molecule is the sum of the total cross section for the constituent atoms. The energy range considered is from a few eV to several thousand eV. The total cross sections for positron impact on an atom are calculated by employing a complex spherical potential which comprises of a static, polarization and an absorption potential. We have good agreement with the experimental results for hydrocarbons for positron energy ⩾100 eV. Our results also agree with the available calculations for CH₄ and C₂H₂ which employed full molecular wavefunctions beyond 100 eV. Our absorption cross sections also agree with molecular wave-function calculations for C₂H₂ and CH₄ beyond 100 eV. We have shown the Bethe plots fore ⁺−C ande ⁺−H scattering systems and Bethe parameters have been extracted. We have fitted the cross section for positron impact on hydrocarbons in the formσ _t(C _n H _m )=naE ⁻ b+mcE ⁻ d in the energy range 300–5000 eV wherea=195.0543,b=0.7986,c=371.1757 andd=1.1379 withE in eV andσ _t in 10⁻¹⁶ cm².     

A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy

Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undopedn-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E _c −0.65eV andE _c −0.74eV) and one grown-in hole trap level (E _v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E _c −∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.     

Polarization of leading Λ hyperons produced by neutrons on target nuclei

The polarization of the leading Λ hyperons produced on carbon and lead target nuclei by 4–10 GeV neutrons in the angle range Θ<8.5° with respect to the beam and with only neutral-particle accompaniment is measured: 〈Π〉=−0.096±0.018 for C and 〈Π〉=− 0.128±0.047 for Pb. The dependence of the polarization on the transverse momentum and the Feynman variable is measured. The normalized invariant cross section as a function of p _⊥ ² is found to be approximated by the function A exp(−Bp _⊥ ² ), where the parameter B is independent of the kind of nucleus (B=8.71±0.09 (GeV/c)⁻² for carbon and B=8.83±0.18 (GeV/c)⁻² for lead). Pis’ma Zh. éksp. Teor. Fiz. 64, No. 4, 237–240 (25 August 1996)     

Critical point phenomena in the electrical resistivity of binary liquid systems: CS2 + CH3CN and CS2 + CH3NO2

Electrical resistance measurements are reported on the binary liquid mixtures CS₂ + CH₃CN and CS₂ + CH₃NO₂ with special reference to the critical region. Impurity conduction seems to be the dominant mechanism for charge transport. For the liquid mixture filled at the critical composition, the resistance of the system aboveT _c follows the relationR=R _c−A(T−T _c) ^b withb=0·6±0·1. BelowT _c the conductivities of the two phases obey a relation σ₂−σ₁=B(T _c−T)^β with β=0·34±0·02, the exponent of the transport coefficient being the same as the exponent of the order parameter, an equilibrium property.     

EPR of manganese-containing plasticine: Spectral simulation and use as an internal standard for comparison of the signal intensities of various free-radical EPR spectra

Electron paramagnetic resonance spectra of manganese-containing plasticine putty have been obtained both at 9.4 and 94.2 GHz (room temperature). It has been possible to analyze both, quantitatively by computer-based simulation and exact diagonalization of a general spin-Hamiltonian, by use of an appropriate powder technique. A fine fit was obtained for both frequencies with an isotropicg-2.00117, uniaxial⁵⁵Mn hyperfine valuesA _∥/g _c β _c = −93.5 G (where ‖ implies direction (ℤ) andA _⊥/g _c β _c = −94.3 G, a nuclear quadrupole effectP _z(⁵⁵Mn)=0, and a uniaxial electronic quadrupole matrix (D/g _c β _c = 3D _Z/2g _c β _c = −82.8 G). The electronic octupole energy was taken into account via the single parameterB ₄⁰/g _c β _c = −0.024 G. The plasticine has been demonstrated to afford a fine intensity and magnetic-field standard, say, for use with free radicals such as spin-trap adducts. Examples provided are 2,2-diphenyl-l-picrylhydrazyl, and hydroxyl radical generated by the Fenton reaction and spin-trapped with 5,5-dimethyl-1-pyroline-N-oxide.     

Influence of anisotropy on the dispersion of surface plasmon-phonon polaritons in silicon carbide

Surface plasmon-phonon polaritons (SPPP’s) of types 3 and 4 are investigated in doped anisotropic single crystals of hexagonal silicon carbide (6H-SiC) in the orientation corresponding to K⊥C and xy⊥C. It is shown that a dispersion dependence of the type-3 SPPP’s bounded by K appears in 6H-SiC when the plasmon frequency increases to ν _p⊥⩾350 cm⁻¹. At ν _p⊥⩾400 cm⁻¹, ν _s(K) exists for type-4 SPPP’s in the frequency range Ω _∥ ⁺ <ν< _⊥ ⁺ . When the concentration of free charge carriers is increased, the dispersion curves are displaced toward higher frequencies. The conditions for the existence of type-3 and type-4 SPPP’s in 6H-SiC are determined. Fiz. Tverd. Tela (St. Petersburg) 40, 636–639 (April 1998)     

Superhyperfine structure of the EPR spectra of Ce<Superscript>3+</Superscript> ions in Li<Emphasis Type="Italic">R</Emphasis>F<Subscript>4</Subscript> (<Emphasis Type="Italic">R</Emphasis> = Y,Lu, Tm) double fluorides

The EPR spectra of Ce³⁺ impurity ions in LiYF₄, LiLuF₄, and LiTmF₄ double-fluoride single crystals have been investigated at a frequency of ∼9.3 GHz in the temperature range 5–25 K. The effective g factors of the ground Kramers doublet of the cerium ions in three crystals are close to each other (g _‖ = 2.737, g _⊥ = 1.475 for LiYF₄:Ce³⁺). A superhyperfine structure of the EPR spectrum of Ce³⁺ ions in the LiTmF₄ Van Vleck paramagnet has been observed in the external magnetic field B oriented along the crystallographic axis c (B ‖ c). The superhyperfine structure of the EPR soectra of the Ce³⁺ ions in the LiYF₄ and LiLuF₄ diamagnetic matrices is resolved for B ⊥ c. Possible factors responsible for this pronounced difference in the properties of the systems studied have been discussed.     

The estimates of periodic potentials in terms of effective masses

LetG _n=(A _n ⁻ , A _n ⁺ ),n≧1, denote the gaps,M _n ^± be the effective masses and Σn=[A _n−1 ⁺ ,A _n ^- ],A ₀ ⁺ =0, be the spectral bands of the Hill operatorT=−d ²/dx ²+V(x) inL ² (R), whereV is a 1-periodic real potential fromL ²(0,1). Let the length gapL _n=|G_n|, h_n be the height of the corresponding slit on the quasimomentum domain and Δ_n=π²(2n−1)−∣Σ_n∣>0 be the band reduction. Let ,n≧1, denote the gap length for the operator . Introduce the sequencesL={L_n}, h={h_n}, l={l_n}, Δ={Δ_n},M ^±={M _n ^± } and the norms ,m≧0. The following results are obtained: i) The estimates of‖V‖, ‖L‖, ‖h‖ ₁, ‖l‖₁, ‖δ‖ in terms of ‖M^±‖₂, ii) identities for the Dirichlet integral of quasimomentum and integral of potentials and so on, iii) the generation of i), ii) for more general potentials. The research described in this publication was made possible in part by grant from the Russian Fund of Fundamental Research and INTAS.     

EPR study of the Jahn-Teller effect of Cu2+ ions in ZnGa2O4

The Jahn-Teller effect in the ZnGa₂O₄ spinel single crystal has been investigated using electron paramagnetic resonance of Cu²⁺ ions in the temperature range 110–560 K. It has been shown that copper ions occupy octahedral sites 16d in the ZnGa₂O₄ crystal with cubic symmetry O _h ⁷ (Fd-3m). At T < 560 K, the octahedra undergo tetragonal distortions (predominantly tension) and rotation around the fourfold axes by the angle θ ≈ 2.6°. The parameters of the spin Hamiltonian, which characterize the prolate (g _‖ = 2.355, g _⊥ = 2.077, A _‖ = 116 Oe, A _tp = 12 Oe) and oblate (g _‖ = 2.018, g _⊥ = 2.246, A _‖ = 75 Oe, A _⊥ = 44 Oe) octahedra, have been determined. At temperatures above 560 K, the static Jahn-Teller effect transforms into the dynamic effect and the spectrum of the magnetic resonance becomes isotropic with g = 2.116 (the experimental frequency corresponds to the X band).     

Absolute cross sections of electron attachment to molecular clusters. Part II: Formation of (H2O) N? , (N2O) N? , and (N2) N?

Absolute cross sections σ⁻(E, N) of electron attachment to clusters (H₂O) _N , (N₂O) _N , and (N₂) _N for varying electron energy E and cluster size N are measured by using crossed electron and cluster beams in a vacuum. Continua of σ⁻(E) are found that correlate well with the functions of electron impact excitation of molecules’ internal degrees of freedom. The electron is attached through its solvation in a cluster. In the formation of (H₂O) _N ⁻ , (N₂O) _N ⁻ , and (N₂) _N ⁻ , the curves σ⁻(N) have a well-defined threshold because of a rise in the electron thermalization and solvation probability with N. For (H₂O)₉₀₀, (N₂O)₃₅₀, and (N₂)₂₆₀ clusters at E = 0.2 eV, the energy losses by the slow electron in the cluster are estimated as 3.0 × 10⁷, 2.7 × 10⁷, and 6.0 × 10⁵ eV/m, respectively. It is found that the growth of σ⁻ with N is the fastest for (H₂O) _N and (N₂) _N clusters at E → 0 as a result of polarization capture of the s-electron. Specifically, at E = 0.1 eV and N = 260, σ⁻ = 3.0 × 10⁻¹³ cm² for H₂O clusters, 8.0 × 10⁻¹⁴ cm² for N₂O clusters, and 1.4 × 10⁻¹⁵ cm² for N₂ clusters; at E = 11 eV, σ⁻ = 9.0 × 10⁻¹⁶ cm² for (H₂O)₂₀₀ clusters, 2.4 × 10⁻¹⁴ cm² for (N₂O)₃₅₀ clusters, and 5.0 × 10⁻¹⁷ cm² for (N₂)₂₆₀ clusters; finally, at E = 30 eV, σ⁻ = 3.6 × 10⁻¹⁷ cm² for (N₂O)₁₀ clusters and 3.0 × 10⁻¹⁷ cm² for (N₂)₁₂₅ clusters. Original Russian Text ? A.A. Vostrikov, D.Yu. Dubov, 2006, published in Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 76, No. 12, pp. 1–15.     

Search for and study of low-mass scalar mesons in reaction np → npπ+π? at neutron beam momentum Pn = (5.20 ± 0.12) GeV/c

We present the results of a search for and study of the resonance effects in the system of π⁺π⁻ from the reaction np → npπ⁺π⁻ at the momentum of quasi-monochromatic neutrons P _n = (5.20 ± 0.12) GeV/c from the data obtained in an exposure of the 1-m hydrogen bubble chamber of Veksler and Baldin Laboratory of High Energies, Joint Institute for Nuclear Research (VBLHE JINR). After the supplementary selection of the events where a secondary proton was emitted in the forward hemisphere in the general c.m.s. of the reaction (cosθ* _p > 0) in the effective mass spectrum of π⁺π⁻ combinations, we found nine peculiarities at the masses (350 ± 3), (408 ± 3), (489 ± 3), (579 ± 5), (676 ± 7), (762 ± 11), (878 ± 7), (1036 ±13), and (1170 ± 11) MeV/c ² with experimental widths of no more than several tens of MeV/c ². We carried out a direct measurement of the spins of resonances and also obtained other quantum numbers. All of these peculiarities have a similar set of quantum numbers I ^G (J ^PC ) = 0⁺ (0⁺⁺). We investigated a sequence of scalar-isoscalar resonances f ₀(σ₀) with masses in the range M ≤ 1200 MeV/c ². We found a phenomenological dependence of the resonance mass on its number. This dependence covered not only the resonances shown in this paper, but also those present in PDG tables with quantum numbers of f ₀(σ₀) mesons.     

Electrical transport properties of CuWO4

The temperature dependence of the electrical conductivity, thermoelectric power and dielectric constant of the antiferromagnetic CuWO₄ have been studied in the temperature range 300–1000 K. The conductivity results can be summarised by the equations σ_I=6.31 × 10⁻³ exp (−0.29 eV/kT) ohm⁻¹ cm⁻¹ in the temperature range 300–600 K and σ_II=3.16 × 10⁵ exp (−1.48 eV/kT) ohm⁻¹ cm⁻¹ between 600 K and 1000 K. The thermoelectric power can be expressed byθ=[− 1.25 (10³/T) + 3.9] mV/K. Initially dielectric constant increases slowly but for high temperatures its increase is fast.