气源分子束外延生长的InPBi薄膜材料中的深能级中心

利用深能级瞬态谱(DLTS)研究了气源分子束外延(GSMBE)生长的InP1-xBix材料中深能级中心的性质。在未有意掺杂的InP中测量到一个多数载流子深能级中心E1,E1的能级位置为Ec-0.38 e V,俘获截面为1.87×10~(-15)cm~2。在未有意掺杂的InP0.9751Bi0.0249中测量到一个少数载流子深能级中心H1,H1的能级位置为Ev+0.31 eV,俘获截面为2.87×10~(-17)cm~2。深中心E1应该起源于本征反位缺陷PIn,深中心H1可能来源于形成的Bi原子对或者更复杂的与Bi相关的团簇。明确这些缺陷的起源对于InPBi材料在器件应用方面具有重要的意义。     

强磁场中氢原子自离化态的能级及宽度

使用Bsplines与复坐标旋转相结合的方法计算了均匀外磁场(2.35×10~6≤B≤1.175×10~4T)中氢原子│m│=0—5,偶宇称和奇宇称自离化态的能级和宽度.并与已有的结果作了比较.分析了共振态能级位置和宽度与态的宇称、磁量子数│m│及磁场强度的关系.结果表明:Bsplines与复坐标旋转方法相结合可以有效地用于强外场中原子自离化态的计算. 关键词：     

CdTe太阳电池中起因于Cu的深能级

在CdTe太阳电池中,易引入并形成Cu深能级中心. 本文采用深能级瞬态谱测试法研究了ZnTe背接触和石墨背接触CdTe太阳电池的部分深能级中心. 研究中运用密度泛函相关理论,分析闪锌矿结构CdTe,Cd空位体系和掺Cu体系的电子态密度,计算得出T_d场和C_3v场下Cu²⁺ d轨道的分裂情况. 计算结果表明,CdTe太阳电池中的E_v+0206 eV和E_v+0122 eV两个深中心来源于Cu替代Cd原子. 计算结果还表明,掺入Cu可降低CdTe体系能量. 关键词： 深能级瞬态谱 第一性原理 CdTe Cu杂质     

CdTe太阳电池中起因于Cu的深能级

在CdTe太阳电池中,易引入并形成Cu深能级中心. 本文采用深能级瞬态谱测试法研究了ZnTe背接触和石墨背接触CdTe太阳电池的部分深能级中心. 研究中运用密度泛函相关理论,分析闪锌矿结构CdTe,Cd空位体系和掺Cu体系的电子态密度,计算得出T_d场和C_3v场下Cu²⁺ d轨道的分裂情况. 计算结果表明,CdTe太阳电池中的E_v+0206 eV和E_v+0122 eV两个深中心来源于Cu替代Cd原子. 计算结果还表明,掺入Cu可降低CdTe体系能量.     

CdS/CdTe薄膜太阳电池的深能级瞬态谱和光致发光研究

用深能级瞬态谱和光致发光研究了无背接触层的CdS/CdTe薄膜太阳电池的杂质分布和深能级中心.得到了净掺杂浓度在器件中的分布.确定了两个能级位置分别在E_V+0365 eV和E_V+0282 eV的深中心,它们的浓度分别为167×10¹² cm^-3和386×10¹¹ cm^-2,俘获截面分别为143×10^-14cm²和153×10^-16cm².它们来源于以化学杂质形式存在的Au和（或）Te_Cd^-复合体,或与氩氧气氛下沉积CdTe时的氧原子相关. 关键词： 深能级瞬态谱 光致发光 CdS/CdTe太阳电池     

光折变晶体Cu∶KNSBN中的浅能级中心

从光栅擦除特性、光致吸收和热激发能三方面的实验和理论分析 ,证明了掺铜KNSBN晶体中除了掺入的铜离子作为深能级中心外 ,还存在浅能级中心 ,并认为它是晶体生长过程形成的氧空位。实验发现温度在 36 0K附近有最大的光折变二波耦合 (TWM )增益系数 ,利用双中心双光栅模型对此作了解释 ,阐明了此浅能级中心在光折变效应中的作用。     

溴的类镁离子跃迁谱线和能级扩展分析

用中国原子能科学研究院HI 13串列加速器提供的 90和 130MeV的Br离子和束箔技术 ,研究了波长在 13— 2 9nm范围内Br的类Mg离子的光谱 .识别出 2 4条属于BrXXIV的“3,3”跃迁 ,即 3s2 ,3s3p ,3p2 ,3s3d和 3p3d组态之间的跃迁谱线 ,其中 19条以前未见报道 .基于实验跃迁谱线 ,19个观测能级得以确立 ,其中有 14个能级此前未见报道 .相对论Hartree Fock(HFR)方法的计算结果对所观测的能级进行了解释.The spectrum of Mg-like Br, Br XXIV is investigated by means of beam-foil technique. Bromine ions of 90 and 130 MeV energy from the HI-13 tandem accelerator are used, and the wavelength region 13-29 nm is investigated. In the spectra, 24 Br XXIV transitions within the n=3 complex, i.e. between the 3s 2, 3s3p, 3p 2, 3s3d and 3p3d configurations are identifies, among them 19 have not been reported before. Based on these transition lines 19 energy levels have been determined and 14 energy level...     

NO (D2Σ)共振增强的多光子离化谱

利用皮秒Nd :YAG激光器泵浦的光学参量发生 /放大器作激发源 ,获得了NO分子在 4 6 0～ 5 70nm波长范围内的多光子离化谱 ,测量了离化信号随激光强度的关系 ,其近五次方关系表明在 4 6 0～ 5 70nm波长范围内NO分子吸收 5个光子而离化。通过对谱线的归属 ,确认在此波长范围内 ,NO分子的离化过程是通过高激发态D2 Σ的共振增强的多光子离化过程。用最小二乘法拟合 ,获得了D2 Σ态的基振动频率和相互作用的力常数     

NO2分子的光学-光学双色双共振多光子离化谱

以Nd:YAG激光器的二倍频输出光为抽运光,其三倍频输出抽运的光学参量发生/放大器输出光为探测光,利用光学-光学双色双共振多光子离化光谱技术(OODR-MPI),获得了NO₂分子在605—675nm探测光波长范围内的多光子离化激发谱. 通过对NO₂分子离化机理的分析,确定了在此波长区间,NO₂分子经1+3+1双共振多光子过程离化,离化通道为NO₂(X²A₁)hν 关键词： 2')" href="#">NO₂ 光学-光学双共振多光子离化谱 里德伯态 分子常数     

The study of hydrogenation effect for the deep levels in GaN epilayers

After the undoped GaN epilayers were grown on (0 0 0 1) sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE), the photoconductivity (PC) and thermally stimulated current (TSC) measurements have been carried out so as to investigate the hydrogenation and annealing effect of the deep levels. These results indicate that the values of concentrations of the deep levels in the GaN epilayers decrease by the passivation of hydrogenation in both PC and TSC measurements. After hydrogenation, the PC intensity for the hydrogenated GaN epilayer decreased remarkably in comparison with that for the as-grown sample and the TSC peak near 150 K drastically decreased.In the case of PC measurement, the PC intensity for the hydrogenated and annealed GaN epilayer was approximately half that for the hydrogenated only GaN epilayer when the hydrogenated epilayer was annealed at 700°C. This result reveals that the passivation of the deep levels due to the hydrogenation is still effective at the annealing temperature of 700°C. In the case of TSC measurement, the deep levels changed slightly in comparison with that of hydrogenated GaN epilayer when the hydrogenated GaN epilayer was annealed at 600°C for 30 s. This result also shows that the passivation of deep levels due to the hydrogenation is still effective at the annealing temperature of 600°C for 30 s. In considering the above circumstances, these TSC results are in reasonable agreement with the PC results.     

Strain effects in GaN epilayers

A review is given about the influence of strain fields on the optical properties of GaN epilayers. We find the basic constant of the material: crystal field splitting, spin-orbit interaction parameter, deformation potentials. We discuss the evolution of the exciton binding energy with strain.     

Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy

In this study deep level transient spectroscopy has been performed on boron–nitrogen co-doped 6H-SiC epilayers exhibiting p-type conductivity with free carrier concentration (N_A–N_D)∼3×10¹⁷ cm⁻³. We observed a hole H₁ majority carrier and an electron E₁ minority carrier traps in the device having activation energies E_v+0.24 eV, E_c −0.41 eV, respectively. The capture cross-section and trap concentration of H₁ and E₁ levels were found to be (5×10⁻¹⁹ cm², 2×10¹⁵ cm⁻³) and (1.6×10⁻¹⁶ cm², 3×10¹⁵ cm⁻³), respectively. Owing to the background involvement of aluminum in growth reactor and comparison of the obtained data with the literature, the H₁ defect was identified as aluminum acceptor. A reasonable justification has been given to correlate the E₁ defect to a nitrogen donor.     

Yellow luminescence from precipitates in GaN epilayers

In this work, the excimer-laser-induced crystallization of a-Si films on SiO₂ was investigated using a long-pulse-duration (200 ns) XeCl source. The microstructural analysis of the laser-irradiated area, for incident energy densities comprised between the thresholds corresponding to the surface and full melting, respectively, of the Si layer, was performed by scanning electron microscopy and Raman spectroscopy. A super-lateral-growth regime was evidenced quite comparable to that which occurs when classical excimer laser pulses of short duration (≈20 ns) are used. A numerical simulation of the surface melt dynamics was also performed and compared to the experimental observations. Received: 8 February 1999 / Accepted: 15 February 1999 / Published online: 5 May 1999     

Analysis of GaN epilayers on sapphire substrates with GaN and AlN sublayers

The features and results of X-ray diffraction analysis of GaN films are presented. The films are grown by metalorganic vapor-phase epitaxy on c-plane sapphire substrates using GaN or AlN nucleation layers deposited at a low temperature. Measurements of the twist angle and concentrations of Al _x Ga_1-x N solid solutions are discussed in detail.     

Time- and frequency-domain measurements of carrier lifetimes in GaN epilayers

Results on time-resolved study of GaN photoluminescence (PL) in a power density range from 0.5 mW/cm² under CW excitation by ultraviolet light emitting diode (UV LED) to 1 GW/cm² under pulsed excitation by YAG:Nd laser in the temperature range from 8 to 300 K are presented. Measurements of PL response in the frequency domain by using amplitude-modulated emission of a UV LED as well as time-resolved PL measurements using a streak camera and light-induced transient grating technique have been used in the study. Yellow luminescence (YL) intensity increases with increasing temperature up to 120 K and faster components in YL decay switch to slower components with increasing temperature under UV LED excitation. At low carrier densities, the trapping decreases the carrier lifetime below 250 ps, while the carrier lifetime in the same GaN sample under excitation ensuring saturation of the traps equals 2 ns.     

Carrier recombination under one-photon and two-photon excitation in GaN epilayers

Luminescence properties of 100-mum thick GaN epilayers grown by hydride vapor phase epitaxy (HVPE) over three different substrates: high-pressure grown n-type bulk GaN (HP-n-GaN), high-pressure bulk GaN doped with magnesium (HP-GaN:Mg), and free-standing HVPE lifted-off from sapphire (FS-HVPE-GaN), were compared by means of one-photon and two-photon excitations. The contribution of carrier capture to nonradiative traps was estimated by the analysis of luminescence transients with carrier diffusion taken into account. The estimated values of carrier lifetime of about 3ns and diffusion coefficient of 1cm(2)/s indicate the highest quality of GaN epilayers on FS-HVPE-GaN substrates.     

Energy relaxation by hot carriers in wurtzite GaN epilayers

In this paper, we report hot carrier energy relaxation processes studied by acoustic phonon emission in wurtzite GaN epilayers, using the heat pulse technique. In this method, the carriers were heated up by means of short (≈ 10 ns) voltage pulses and emitted phonons were detected by Al bolometers biased at their superconducting transition. Obtained phonon signals indicate that the optical phonon emission threshold has not been reached and longitudinal acoustic and transverse acoustic modes can be clearly resolved. This paper specifically concentrates on the electron temperature dependence of the energy relaxation rates and compares the experimental results with the existing theory.     

Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method

Deep level transient spectroscopy (DLTS) is employed to study deep level defects in n-6H-SiC (silicon carbide) epilayers grown by the sublimation method. To study the deep level defects in n-6H-SiC, we used as-grown, nitrogen doped and nitrogen-boron co-doped samples represented as ELS-1, ELS-11 and ELS-131 having net (N_D–N_A) ∼2.0×10¹² cm⁻³, 2×10¹⁶ cm⁻³ and 9×10¹⁵ cm³, respectively. The DLTS measurements performed on ELS-1 and ELS-11 samples revealed three electron trap defects (A, B and C) having activation energies E_c – 0.39 eV, E_c – 0.67 eV and E_c – 0.91 eV, respectively. While DLTS spectra due to sample ELS-131 displayed only A level. This observation indicates that levels B and C in ELS-131 are compensated by boron and/or nitrogen–boron complex. A comparison with the published data revealed A, B and C to be E₁/E₂, Z₁/Z₂ and R levels, respectively.     

Temperature dependence of transport characteristics of wurtzite GaN epilayers

We report electrical transport properties of intentionally and unintentionally doped wurtzite GaN epilayers within the temperature range of 3K up to 340 K. Specifically, temperature dependence of the carrier concentration, mobility and resistivity are investigated. Obtained data could only be explained on the basis of two-band model, namely, high mobility conduction band and low mobility impurity band. The threshold doping concentration for the dominance of the conduction band electrons is estimated to be about 10¹⁸ cm^–3.