一种基于载流子的双栅MOSFET解析模型

提出一种全新的基于载流子求解的双栅MOSFET解析模型.针对无掺杂对称双栅MOSFET结构,该模型由求解泊松方程的载流子分布和Pao-Sah电流形式直接发展而来.发展的解析模型完全基于MOSFET的基本器件物理进行直接推导,结果覆盖了双栅MOSFET所有的工作区:从亚阈到强反型和从线性到饱和区,不需要任何额外假设和拟合参数.模型的预言结果被2D数值模拟很好地验证,表明该解析模型是一个理想的双栅MOSFET建模架构.     

一种基于载流子的双栅MOSFET解析模型

提出一种全新的基于载流子求解的双栅MOSFET解析模型.针对无掺杂对称双栅MOSFET结构,该模型由求解泊松方程的载流子分布和Pao-Sah电流形式直接发展而来.发展的解析模型完全基于MOSFET的基本器件物理进行直接推导,结果覆盖了双栅MOSFET所有的工作区:从亚阈到强反型和从线性到饱和区,不需要任何额外假设和拟合参数.模型的预言结果被2D数值模拟很好地验证,表明该解析模型是一个理想的双栅MOSFET建模架构.     

非掺杂对称双栅的基于完整表面电势的核心模型

通过求解Poisson方程自洽地得到了表面电势随沟道电压的变化关系,从而推出了非掺杂对称双栅MOSFET的一个基于表面势的模型.通过Pao-Sah积分得到了漏电流的表达式.该模型由一组表面势方程组成,解析形式的漏电流可以通过源端和漏端的电势得到.结果标明该模型在双栅MOSFET的所有工作区域都成立,而且不需要任何简化(如应用薄层电荷近似)和辅助拟合函数.对不同工作条件和不同尺寸器件的二维数值模拟与模型的比较进一步验证了提出模型的精度.     

非掺杂对称双栅的基于完整表面电势的核心模型

通过求解Poisson方程自洽地得到了表面电势随沟道电压的变化关系,从而推出了非掺杂对称双栅MOSFET的一个基于表面势的模型. 通过Pao-Sah积分得到了漏电流的表达式. 该模型由一组表面势方程组成,解析形式的漏电流可以通过源端和漏端的电势得到. 结果标明该模型在双栅MOSFET的所有工作区域都成立,而且不需要任何简化(如应用薄层电荷近似)和辅助拟合函数. 对不同工作条件和不同尺寸器件的二维数值模拟与模型的比较进一步验证了提出模型的精度.     

双栅MOSFET的研究与发展

具有特殊结构的双栅ＭＯＳＦＥＴ是一种高速度、低功耗ＭＯＳＦＥＴ器件,符合未来集成电路发展的方向。文章介绍了多种双栅ＭＯＳＦＥＴ的结构、优点,以及近年来国内外对双栅ＭＯＳＦＥＴ的研究成果。     

自对准双栅MOSFET 的结构与工艺实现

双栅MOSFET是一种非常有发展前途的新型器件，它具有跨导高、亚阈值特性优异、短沟道特性好等优点。自对准的双栅MOSFET结构中，栅与源漏之间无覆盖，对于实现最终的高性能十分重要。本文具体介绍了几种自对准的双栅MOSFET的结构及其工艺流程。     

异质栅MOSFET热载流子效应的研究

异质栅MOSFET器件的栅极由具有不同功函数的两种材料拼接而成,能够提高载流子输运速度、抑制阈值电压漂移等.文中比较了异质栅MOSFET和常规MOSFET的热载流子退化特性.通过使用器件数值模拟软件MEDICI,对能有效监测热载流子效应的参数,例如电场、衬底电流和栅电流等参数进行仿真.将仿真结果与常规MOSFET对比,从抑制热载流子效应方面验证了新结构器件的高性能.     

通用薄膜双栅SOI MOSFET电流模型

本文利用薄膜双栅ＳＯＩ器件在阈值电压附近硅膜中的常电位近似，得到一个通用的薄膜双栅ＳＯＩ器件电流模型．数值模拟结果与实验值吻合较好．文中特别对其它模型所不适用的正背栅具有不同参数的双栅ＳＯＩ器件进行了源漏电流的模拟，并对结果进行了分析．     

双栅和环栅MOSFET中短沟效应引起的阈值电压下降

基于电荷分享原理 ,推导了双栅和环栅 MOSFET短沟效应引起的阈值电压下降 ,分析了衬底掺杂浓度、栅氧化层厚度及硅膜厚度等因素对阈值电压下降的影响 ,并用数值模拟验证了理论结果 .这些研究结果对进一步开展纳米 CMOS新器件的研究有很好的参考价值和实际意义     

双栅和环栅MOSFET中短沟效应引起的阈值电压下降

基于电荷分享原理,推导了双栅和环栅MOSFET短沟效应引起的阈值电压下降,分析了衬底掺杂浓度、栅氧化层厚度及硅膜厚度等因素对阈值电压下降的影响,并用数值模拟验证了理论结果.这些研究结果对进一步开展纳米CMOS新器件的研究有很好的参考价值和实际意义.     

Analytic Model for Undoped Symmetric Double-Gate MOSFETs With Small Gate-Oxide-Thickness Asymmetry

In this paper, an analytic model for undoped symmetric double-gate MOSFETs with small gate-oxide-thickness asymmetry is presented by virtue of a perturbation approach. Various effects on the MOSFET performance caused by small asymmetric departure from the nominal gate oxide thickness due to process variations and uncertainties are studied. This analytic solution can be used in compact models for IC designs.     

Generic Carrier-Based Core Model for Undoped Four-Terminal Double-Gate MOSFETs Valid for Symmetric, Asymmetric, and Independent-Gate-Operation Modes

A generic carrier-based core model for undoped four-terminal double-gate (DG) MOSFETs has been developed and is presented in this paper. The model is valid for symmetric, asymmetric, and independent-gate-operation modes. Based on the exact solution of the 1-D Poisson's equation in a general DG MOSFET configuration, a rigorous derivation of the drain-current equations from the Pao-Sah's double integral has been performed. By using the channel carriers as the intermediate variable, a very compact analytical drain-current expression can be obtained. The model is extensively verified by comparisons with a 2-D numerical simulator under a large number of biasing conditions. The concise mathematical formulation allows the unification of various DG models into a carrier-based core model for a compact DG MOSFET model development.     

对称薄膜双栅nMOSFET模型的研究

利用对称薄膜双栅MOSFET在阈值电压附近硅膜中的常电位近似,以硅膜达到体反型时的泊松方程为基础,得到一个有效的双栅nMOS器件模型.考虑到薄膜双栅SOI器件的体反型特性,阈值电压处的表面势不再受限于传统的强反型界限(指2倍费米势),并运用跨导最大变化(TC)法对此模型进行分析,得到阈值电压和阈值电压处表面势的详细表达式;另外,还演示了薄膜双栅MOSFET的近乎完美的亚阈值斜率特性,其数值模拟结果与文献实验结果吻合较好.     

非掺杂环栅MOSFETs的基于表面电势和非薄层电荷的核心模型

A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate （SRG） MOSFETs is presented. It is based on the exact surface potential solution of Poisson＇s equation and Pao-Sah＇s dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fitting-parameters, and verified by the 3-D numerical simulation.     

A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs

A surface potential based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented. It is based on the exact surface potential solution of Poisson's equation and Pao-Sah's dual integral without the charge-sheet approximation, allowing the SRG-MOSFET characteristics to be adequately described by a single set of the analytic drain current equation in terms of the surface potential evaluated at the source and drain ends. It is valid for all operation regions and traces the transition from the linear to saturation and from the sub-threshold to strong inversion region without fiRing-parameters, and verified by the 3-D numerical simulation.     

A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects

A drain-current model for undoped symmetric double-gate MOSFETs is proposed. Channel-length modulation and drain-induced barrier lowering are modeled by using an approximate solution of the 2D Poisson equation. The new model is valid and continuous in linear and saturation regimes, as well as in weak and strong inversions. Excellent agreement was found with Silvaco-ATLAS simulations.