SURFACE PHASE DECOMPOSITION IN Bi2Sr2CaCu2O7-y SINGLE CRYSTALS UNDER NITROGEN IONS IRRADIATION

The influence of irradiation by 30 keV nitrogen ions with a fluence 1×10¹⁸N⁺·cm^-2 on the crystal structure of single crystal Bi₂Sr₂CaCu₂O_7-y was investigated by means of X-ray photoelectron spectroscopy and X-ray diffraction. The irradiation caused a transformation from Bi₂Sr₂CaCu₂O_7-y (2212 phase) to Bi₂Sr₂CuO_5-x (2201 phase). It was observed that. a small amount of metallic bismuth with an average thickness of about 6.3nm appeared after the irradiation. The possible reaction mechanism under nitrogen-ion irradiation was discussed.     

Bi2Sr2CaCu2O8单晶中的反常尖锋效应

使用牛津震动样品磁强计(VSM)研究了Bi₂Sr₂CaCu₂O₈单晶的磁滞回线.在20到40K温度之间发现了反常的尖锋效应,随样品O含量的增加,发生尖锋效应的外场也相应提高.可以认为在尖峰效应处发生了由涡漩物质的有序固态到无序固态的相变,在有少量点缺陷存在的BSCCO单晶相图上,B_sp线终止于20K温度处,在20K以下温区没有发生准格子到涡漩玻璃的相变,涡漩固相始终以准格子形式存在;可以认为尖峰效 关键词： 2Sr₂CaCu₂O₈单晶')" href="#">Bi₂Sr₂CaCu₂O₈单晶 磁滞回线 尖锋效应 相变     

Bi2Sr2CaCu2O8超导单晶中的电阻反常行为

测量了Bi₂Sr₂CaCu₂O₈单晶的ab面和c轴方 向电阻,在其超导转变温度附近发现了反常的电阻峰出现.其随外磁场(>100Gs)和电流的增 加而逐渐消失.文章认为这个反常的电阻峰是由于单晶中超导相的不均匀分布而导致的准再 进入行为. 关键词： 2Sr₂CaCu₂O₈单晶')" href="#">Bi₂Sr₂CaCu₂O₈单晶 反常电阻峰 准再入行为     

用自助熔剂法生长Bi2Sr2CaCu2Oy单晶的特点

用Ｂｉ₂Ｏ₃作自助熔剂，对Ｂｉ-２２１２单晶的生长特点作了较为细致的实验研究．就助熔剂含量、热循环、坩锅的污染、熔体的非共熔性、各向异性生长速度以及Ｂｉ-２２０１相的共生等晶体生长中普遍存在的诸多问题进行了深入的探讨     

Bi2Sr2CaCu2Oy单晶调制结构的X射线衍射研究

用Ｘ射线转靶衍射仪，详细地观察和分析了Bi₂Sr₂CaCu₂O_y单晶的调制结构．指出布喇格反射的卫星峰是沿ｃ^*拉长的，与Ｂ心正交对称结构不相符的宽化峰正是由于这种拉长的结果，且导致卫星峰强度的不对称性．Ｂｉ-Ｏ层和钙钛矿层晶格失配形成的超晶格为非正交而是单斜的，并可能存在超晶格孪晶     

Bi2Sr2CaCu2O8单晶a-b平面热电势率的各向异性

测量了Bi₂Sr₂CaCu₂O₈单晶a方向的热电势率S_a和b方向的热电势率S_b与温度T的关系,发现在a-b平面内热电势率存在各向异性。认为S_a与S_b的差异来源于b方向的调制结构,并用扩散热电势率S_d,声子曳引热电势率S_g和相关跳跃热电势率S_h三种贡献,对实验结果进行了 关键词：     

非理想LnBa2Cu3O7-y单晶的输运特性

在LnBa₂Cu₃O_7-y单晶上的一系列实验事实表明:体内存在的结构不完整性和组成不均匀性都对其正常态电阻率、正常-超导转变行为、超导临界温度,以及临界电流等产生重要影响。作者认为:与单相多晶LnBa₂Cu₃O_7-y样品相类似,非理想的单晶体也存在着超导玻璃态效应。 关键词：     

Bi2Sr2CaCu2O8的晶体结构与超导性能

本文研究了Bi-Sr-Ca-Cu-O体系中理想成份为Bi₂Sr₂CaCu₂O₈化合物的超导性能和晶体结构。名义成份为BiSrCaCu₂O_5.5零电阻超导转变温度T_c(0)=81.5K。用X射线粉末衍射方法测定了Bi₂Sr₂CaCu₂O₈的晶体结构,其基本结构属体心四方晶系,空间群为D_4h¹⁷-l4/mmm,点阵常数a=3.825?,c=30.82?。每单胞化合式单位为2.2Ca占据2(a)等效点系,4Sr,4Bi和4Cu占据三组4(e)位置,其原子参数z分别为0.110,0.302和0.445,16O分别占据8(g),z=0.445和二组4(e),z=0.210和0.380。Bi₂Sr₂CaCu₂O₈晶体结构可认为是阳离子沿z轴的(00z)和((1/2)(1/2)z)交错排列,由Aurivillius相导生出来的。讨论了在Bi-Sr-Ca-Cu-O体系中可能存在的其它沿z轴不同堆垛层数的超导相。 关键词：     

Bi2Sr2CaCu2O8+y掺Na样品的超导机制

用熔融法制备了Bi₂Sr₂CaCu₂O_8+y掺Ｎａ多晶样品，转变温度Ｔ_c提高到９０Ｋ以上，最大的零电阻温度达到９２．５Ｋ。在流动氧气退火后，未掺Ｎａ样品Ｔ_c显著降低，而掺Ｎａ样品Ｔ_c几乎不变，说明二者Ｔ_c提高具有不同的机制。据此我们认为Ｎａ替代了Ｂｉ而使Ｂｉｏ层电荷失去平衡，Ｃｕｏ面上电子转移到Ｂｉｏ层而形成空穴，空穴和电子的吸引相 关键词：     

在H2气氛中Bi2Sr2CaCu2O8+δ的热处理效应

对高品质单相多晶Bi₂Sr₂CaCu₂O_8+δ样品作真空或H₂气氛中不同温度下的热处理。由X射线结构分析,其正常态和超导态性质(特别是载流子浓度)的系统测量结果表明:Bi₂Sr₂CaCu₂0_8+δ样品在H₂气氛中热处理,其氧的释放可分为两个阶段:一是Bi-O层之间的过量氧原子的逸出,降低系统的载流子浓度,从而调节T_c;二是CuO₂面内氧原子的迁移,产生氧空位,使CuO₂面内Cu²⁺的短程二维反铁磁(2D-AFM)有序背景遭到破坏。可以认为:以往文献中报道的Bi₂Sr₂CaCu₂O_8+δ超导体的吸氢效应导致T_c的变化,很可能主要的并不是氢原子的电子掺杂行为,而是与吸氢过程中氧含量的变化相联系。 关键词：     

Temperature dependent water adsorption on Bi2Sr2CaCu2O8 single crystal

Temperature dependent infrared study of water adsorption on the bc-plane of a Bi₂Sr₂CaCu₂O₈ (Bi2212) single crystal reveals that water is molecularly physisorbed, and forms hydrogen-bonded clusters in the temperature range of 85-150 K. Although dissociative adsorption is expected on surfaces terminated with Ca-O and Cu-O groups, no dissociated species is detected. The main absorption bands occur between 3200 and 3500 cm⁻¹ and are assigned to the O-H stretching and the overtone of O-H bending. For exposures higher than 1.0 L, the sticking coefficients are similar for different temperatures. The features in the O-H stretch region for water clusters red-shift as a function of temperature between 85 and 140 K. Water clusters have an amorphous structure between 85 and 140 K, and form a crystalline structure at 150 K.     

Modelling of the reactive interface formation on Bi2Sr2CaCu2O8

We have applied the phenomenological model of diffused interfaces, developed originally to describe the Fe growth on Bi₂Sr₂CaCu₂O₈, to interpret quantitatively the core photoemission spectra of two reactive interfaces, namely Cr and Ge on Bi₂Sr₂CaCu₂O₈. At room temperature the interfaces with Fe and Cr have the same kinetics of growth suggesting similar adatom condensation, while the semiconductor-superconductor interface grows layer-by-layer according to the Franck-van der Merwe kinetics. Differences in the parameters of the model resulting from the simultaneous fit of the core-level decays are related to differences in the microscopic processes occurring during the growth.     

Scanning tunneling spectroscopy of a superlattice superconductor: Bi2Sr2CaCu2O8

It is clear that many of the cuprate superconductors are truly superlattices, composed of sheets whose individual superconducting critical temperatures may approach bulk values. Such a cuprate is Bi₂Sr₂CaCu₂O₈, often referred to as BSCCO-2212. Scanning tunneling spectroscopy (vacuum tunneling) applied toa-bBiO cleavage planes ofT_c≈90 K BSCCO single crystals under liquid helium simultaneously provides topography and local dI/dVspectra (superconducting density of states: DOS). The spectra, which are similar to those obtained from angle-resolved photoemission spectroscopy, confirm a large gap parameter Δ(x,y) on the uppermost layer. The dI/dVspectra do not unequivocally select order parameter symmetry, but are probably consistent with d-wave or anisotropic s-wave states. Spatial variations of Δ on a 100 Å scale are attributed to variation in BiO metallicity, originating in oxygen stoichiometry variations. A model is presented to explain the different dI/dVspectra which are seen, and associated with different local oxygen concentrations. This model, based on the superconducting proximity effect, assumes that in some regions the BiO uppermost layer is insulating and in other regions it is metallic, in the latter case induced superconductivity by proximity to the CuO₂planes. Our STM measurements appear to sample only the uppermost half cell of the crystal, and contain no obvious superlattice features. Recent measurements have confirmed Josephson radiation from voltage biasedc-axis pillars of BSCCO. From the point of view of the present work, the superconducting systems which weakly couple along thec-direction to create Josephson junctions are probably half-cell slabs of height 15.4 Å, each containing two CuO₂and two BiO layers, which act as single composite electrodes for the Josephson junctions.     

Intrinsic Josephson junctions in Bi2Sr2CaCu2O8+δ single crystals

We report on thec-axis superconducting energy gap parameter Δ _c (T) of intrinsic Josephson tunnel junctions inBi ₂ Sr ₂ CaCu ₂ O _8+δ (Bi2212) single crystals. Δ _c (4.2K)≈10−13 meV, which is approximately a factor of two smaller than reported in the majority of tunneling experiments. Δ _c (T) deviates strongly from the BCS temperature dependence. These observations may be explained by a multilayer model of Bi2212 which assumes that theBi−O layers are superconducting due to the proximity effects. The Josephson tunneling then takes place between adjacentBi−O layers while there is a strong proximity coupling betweenBi−O andCu−O layers. The work is supported by Swedish Supercon-ductivity Consortium and NUTEK, and, in part, by Russian Foundation for Basic Research, grant #95-02-04307     

Bi2Sr2CaCu2-xSnxO8+δ系列 超导体的XRD和XPS研究

实验研究了Bi₂Sr₂CaCu_2-xSn_xO_8+δ 的X射线衍射(XRD)和光电子能谱(XPS).实验发现随着掺杂(Sn)量的增加,晶格参数a 和c都有所变化,O1s和Cu2p芯能级谱也发生了变化.实验结果表明： 在低掺杂量时,Sn主要 呈二价态;而在高掺杂浓度时呈四价态;掺Sn对超导电性的影响与其他元素的掺杂不同.这 些实验结果支持化学环境在高温超导样品的电子结构中起着重要作用的结论. 关键词： Bi系超导体 掺杂 X射线衍射 光电子能谱     

Pinning model derived from resistive measurements on melt processed Bi2Sr2CaCu2O8

On melt processed samples of the 86 K superconductor Bi₂Sr₂CaCu₂O₈ we have performed resistive measurements in the low field limit B0.13 T and 40 KT77 K. The voltage drop is found to rise exponentially with current E ∝exp j/j₀, which is interpreted in terms of thermal activation of pinned flux lines. An activation energy U₀(T)90 meV is derived from the transition width j₀(T) and is related to a plausible core pinning interaction of flux lines with normal conducting precipitates. This reproduces the measured j_c(B, T) values in the whole regime investigated. We conclude that pinning centers must have a minimum size in order to control flux creep. Finally we demonstrate that conventional summation of the single site pinning forces cannot account for the observed macroscopic depinning current density.     

Low-temperature AC conductivity of Bi2Sr2CaCu2O8+δ

We report measurements of anamolously large dissipative conductivities, σ₁, in Bi₂Sr₂CaCu₂O_8+δ at low temperatures. We have measured the complex conductivity of Bi₂Sr₂CaCu₂O_8+δ thin films at 100–600 GHz as a function of doping from the underdoped to the overdoped state. At low temperatures there exists a residual σ₁ which scales with the T=0 superfluid density as the doping is varied. This residual σ₁ is larger than the possible contribution to σ₁ from a thermal population of quasiparticles (QP) at the d-wave gap nodes.     

The nuclear contribution to the specific heat of single crystals of YBa2Cu3O7 and Bi2Sr2CaCu2O8

Specific heat data below 1 K of Bi₂Sr₂CaCu₂O₈ and YBa₂Cu₃O₇ are analyzed. For YBa₂Cu₃O₇ the nuclear specific heat, C_N, amounts to 38T⁻² μJ/mol K. C_N for Bi₂Sr₂CaCu₂O₈ exceeds that of YBa₂Cu₃O₇ by a factor of 15. The nuclear quadrupolar specific heat contribution alone is insufficient to explain the data for YBa₂Cu₃O₇, while lack of NQR data does not allow such a comparison in Bi₂Sr₂CaCu₂O₈ to be made. The contribution to C_N from nuclear spins coupled via the contact hyperfine interaction with correlated magnetic spins (in the CuO₂ plane) is derived as a function of the correlation length. This contribution can be treated independently from the quadrupolar term. We show that the excess specific heat in YBa₂Cu₃O₇ likely originates in a few percentage of an impurity (oxygen deficient) phase with a strong hyperfine field on the Cu nuclei.     

Lock-in transition in Bi2Sr2CaCu2O8+δ observed through 10GHz dissipation

We observe the lock-in transition in Bi₂Sr₂CaCu₂O_8+δ single crystals, by measuring the 10 GHz dissipation for various orientations of the magnetic field; various vortex lattice structures are revealed by different dissipation regimes.