Numerical evidence of Luttinger liquid to Fermi liquid transformation in lithium doped trans-polyacetylene chain

We report on the first direct numerical evidence of doping-induced transformation of Tomonaga-Luttinger liquid to Fermi liquid in quasi-one-dimensional lithium doped trans-polyacetylene chain. Using density functional theoretical calculation, an analysis of density of states near the Fermi energy reveals a power-law scaling factor of Tomonaga-Luttinger liquid at low dopant concentration in the metallic regime. As soon as the doping level reaches 0.0763e/C, normal power-law scaling factor of Fermi liquid has been realized as a special case of Luttinger liquid in one dimension. The variation of density-density correlation is consistent with the present theoretical prediction.     

Theoretical investigation on the oligothienoacenes under the influence of external electric field

Theoretical investigation on a series of oligothienoacenes has been carried out at the B3LYP/6-31G* level by considering the influence of the external electric field. With the electric field increasing, the carbon-carbon single bonds become shorter and the carbon-carbon double bonds become longer, resulting in a better conjugation. Due to the different electron density, the charge mobility of the sulfur is more obvious than that of the carbon. The highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gap decreases with the EF intensity increasing. The applied EF also changes the spatial distribution of the molecular orbits: LUMO and several higher orbitals shift to the high potential side, whereas HOMO and several lower ones shift to the low potential side. All these features behave more pronounced with increasing conjugated chain length.     

Reformulation of density functional theory for N-representable densities and the resolution of the v-representability problem

Density functional theory for the case of general, N-representable densities is reformulated in terms of density functional derivatives of expectation values of operators evaluated with wave functions leading to a density, making no reference to the concept of potential. The developments provide proof of existence of a mathematical procedure that determines whether a density is v-representable and in the case of an affirmative answer determines the potential (within an additive constant) as a derivative with respect to the density of a constrained search functional. It also establishes the existence of an energy functional of the density that, for v-representable densities, assumes its minimum value at the density describing the ground state of an interacting many-particle system. The theorems of Hohenberg and Kohn emerge as special cases of the formalism. Numerical results for one-dimensional non-interacting systems illustrate the formalism. Some direct formal and practical implications of the present reformulation of DFT are also discussed.     

Energy expression of the chemical bond between atoms in metal oxides

The chemical bond between atoms in metal oxides is expressed in an energy scale. Total energy is partitioned into the atomic energy densities of constituent elements in the metal oxide, using energy density analysis. The atomization energies, ΔE_M for metal atom and ΔE_O for O atom, are then evaluated by subtracting the atomic energy densities from the energy of the isolated neutral atom, M and O, respectively. In this study, a ΔE_O vs. ΔE_M diagram called atomization energy diagram is first proposed and used for the understanding of the nature of chemical bond in various metal oxides. Both ΔE_M and ΔE_O values reflect the average structure as well as the local structure. For example their values vary depending on the vertex, edge or face sharing of MO₆ octahedron, and also change with the overall density of binary metal oxides. For perovskite-type oxides it is shown that the ΔE_O value tends to increase by the phase transition from cubic to tetragonal phase, regardless of the tilting-type or the 〈1 0 0〉 displacement-type transition. The bond formation in spinel-type oxides is also understood with the aid of the atomization energies. The present approach based on the atomization energy concept will provide us a new clue to the design of metal oxides.     

Topological analysis of real space properties for the solid-state full-potential APW DFT method

For the solid-state density functional program Elk a module was developed that enables to interface the crystal orbitals data into the DGrid package. Within DGrid the real-space electronic properties, like the electron density and its gradient or Laplacian, kinetic energy density, electron localizability indicator, etc., are computed. The properties can be searched for critical points as well as for the interconnection lines between them. Additionally, the basins can be evaluated and the property integrals can be calculated. The results of topological analysis for fcc Al, MgB₂, CaTiO₃, and urea molecular crystal are discussed and compared with the experimental data. The role of certain computation parameters of (L)APW method is also analyzed.     

Electron correlation effects on Compton profiles of copper in the GW approximation

The Compton profiles (CPs) of copper are calculated by the GW approximation with FLAPW basis sets on the LDA. In the quasiparticle band structure in the GW approximation, the width of fully occupied 3d valence band which is overestimated in the LDA, is in good agreement with experimental observation. The dynamical screening effects are important for band width narrowing. The occupation number densities are evaluated from the spectral function calculation within the GW calculations. The CPs obtained using these GW calculations successfully reproduce experimental results.     

Energy convexity as a consequence of decoherence and pair-extensive interactions in many-electron systems

Using the concept of self-entanglement, through which a pure state constructed in an augmented Hilbert space can describe a mixed state and through which the effects of physical decoherence can be mapped onto systems separated by an infinite distance, with the role of environmental states assumed by system states in disjoint Hilbert spaces, we show that expectation values of Hamiltonians subscribing to decoherence and satisfying the condition of extensivity, defined in the text, obey the energy convexity relation. The analysis based on self-entanglement also leads to a surprising interpretation of the failure of the convexity relation for model Hamiltonians such as the Hubbard model: The failure is due to the existence of self-entangled states with lower energies than the ground state so that in such models decoherence, i.e., disentangling from the self-entangled states, would cost energy and disallow the observation of the state through measurement. The Hubbard model is discussed extensively in an appendix where we also discuss and resolve some of the counterarguments to the convexity relation that have been advanced in the literature.     

DFT study on the electronic structure and chemical state of Americium in an (Am,U) mixed oxide

We investigated the electronic state of an (Am,U) mixed oxide with the fluorite structure using the all-electron full potential linear augmented plane wave method and compared it with those of Am₂O₃, AmO₂, UO₂, and La_0.5U_0.5O₂. The valence of Am in the mixed oxide was close to that of Am₂O₃ and the valence of U in the mixed oxide was pentavalent. The electronic structure of AmO₂ was different from that of Am₂O₃, particularly just above the Fermi level. In addition, the electronic states of Am and U in the mixed oxide were similar to those of trivalent Am and pentavalent U oxides. These electronic states reflected the high oxygen potential of AmO₂ and the heightened oxygen potential resulting from the addition of Am to UO₂ and also suggested the occurrence of charge transfer from Am to U in the solid solution process.     

Valence band photoemission study of the copper chalcogenide compounds, Cu2S, Cu2Se and Cu2Te

The electronic structures of the copper chalcogenide compounds, Cu₂S, Cu₂Se and Cu₂Te have been investigated by taking photoemission data with synchrotron photon sources. The band calculations are done using the full-potential linear-muffin-tin-orbital method. Since the crystal structures are not clarified well, several simplified structure models are used. The calculated densities of states are compared with the observed spectra. The analysis shows that a sharp peak at −3.5 eV is due to the Cu 3d states, and that the tails at the high and low energy sides of the Cu 3d peak are due to the chalcogen p states.     

The effects of O deficiency on the electronic structure of rutile TiO2

Ab initio density functional calculations (plane wave GGA, CASTEP) were performed to determine the effect of O deficiency on the electronic structure of rutile, TiO₂. O deficiency was introduced through either the removal of O or the insertion of interstitial Ti atoms. At physically realistic concentrations of O vacancies in the rutile lattice (i.e. 25% and less) O deficiency results in the population of the bottom of the conduction band, the location of the Ti 3d orbitals in the pure structure, increasingly with increasing vacancy concentration. We propose that this could be confused with the formation and population of gap states especially where O vacancies occur in isolated positions in the lattice. In contrast, Ti interstitials introduce a defect state into the energy gap, without an overall reduction in the size of the energy gap. O vacancies result in a spin polarized solution, whereas Ti interstitials do not.     

Analysis of electronic structures of 3d transition metal-doped TiO2 based on band calculations

The electronic structures of titanium dioxide (TiO₂) doped with 3d transition metals (V, Cr, Mn, Fe, Co and Ni) have been analyzed by ab initio band calculations based on the density functional theory with the full-potential linearized-augmented-plane-wave method. When TiO₂ is doped with V, Cr, Mn, Fe, or Co, an electron occupied level occurs and the electrons are localized around each dopant. As the atomic number of the dopant increases the localized level shifts to lower energy. The energy of the localized level due to Co is sufficiently low to lie at the top of the valence band while the other metals produce midgap states. In contrast, the electrons from the Ni dopant are somewhat delocalized, thus significantly contributing to the formation of the valence band with the O p and Ti 3d electrons. Based on a comparison with the absorption and photoconductivity data previously reported, we show that the t_2g state of the dopant plays a significant role in the photoresponse of TiO₂ under visible light irradiation.     

A first-principles theoretical simulation on the electronic structures and optical absorption properties for O vacancy and Ni impurity in TiO2 photocatalysts

The band structures and optical absorption spectra of O vacancy and Ni ion doped anatase TiO₂ were successfully calculated and simulated by a plane wave pseudopotential method based on density functional theory (DFT). From the calculated results, a phenomenon of “impurity compensation” was found: the lower formation energy for O vacancy than Ni impurity indicated that introducing the intrinsic defect of O vacancy into Ni ion doped TiO₂ sample was very possible; the positive binding energy for the combination of O vacancy and Ni impurity indicated that two defects were apt to bind to each other; While Ni impurity produced the donor levels in the forbidden band of TiO₂, Ni impurity with O vacancy produced the acceptor levels upon which the excitation led to the photogenerated electrons with high energy and transferability. The combination of absorption spectra for O vacancy and Ni impurity with O vacancy models could reproduce the experimental measurement very well.     

On a solution of the self-interaction problem in Kohn–Sham density functional theory

We report on a methodology for the treatment of the Coulomb energy and potential in Kohn–Sham density functional theory that is free from self-interaction effects. Specifically, we determine the Coulomb potential given as the functional derivative of the Coulomb energy with respect to the density, where the Coulomb energy is calculated explicitly in terms of the pair density of the Kohn–Sham orbitals. This is accomplished by taking advantage of an orthonormal and complete basis that is an explicit functional of the density that then allows for the functional differentiation of the pair density with respect to the density to be performed explicitly. This approach leads to a new formalism that provides an analytic, closed-form determination of the exchange potential. This method is applied to one-dimensional model systems and to the atoms Helium through Krypton based on an exchange only implementation. Comparison of our total energies (denoted SIF) to those obtained using the usual Hartree–Fock (HF) and optimized effective potential (OEP) methods reveals the hierarchy $E_{\mathrm{HF}}\le E_{\mathrm{OEP}}\le E_{\mathrm{SIF}}$ that is indicative of the greater variation freedom implicit in the former two methods.     

Solving the self-interaction problem in Kohn–Sham density functional theory: Application to atoms

In previous work, we proposed a computational methodology that addresses the elimination of the self-interaction error from the Kohn–Sham formulation of the density functional theory. We demonstrated how the exchange potential can be obtained, and presented results of calculations for atomic systems up to Kr carried out within a Cartesian coordinate system. In this paper, we provide complete details of this self-interaction free method formulated in spherical coordinates based on the explicit equidensity basis ansatz. We prove analytically that derivatives obtained using this method satisfy the Virial theorem for spherical orbitals, where the problem can be reduced to one dimension. We present the results of calculations of ground-state energies of atomic systems throughout the periodic table carried out within the exchange-only mode.     

Bonds,bands, and band gaps in tetrahedrally bonded ternary compounds: The role of group V lone pairs

An interesting class of tetrahedrally coordinated ternary compounds has attracted considerable interest because of their potential as good thermoelectrics. These compounds, denoted as I₃–V–VI₄, contain three monovalent-I (Cu, Ag), one nominally pentavalent-V (P, As, Sb, Bi), and four hexavalent-VI (S, Se, Te) atoms; and can be visualized as ternary derivatives of the II–VI zincblende or wurtzite semiconductors, obtained by starting from four unit cells of (II–VI) and replacing four type II atoms by three type I and one type V atoms. We find that nominally pentavalent-V atoms are effectively trivalent and their lone (ns²) pairs play an active role in opening up a gap. The lowest conduction band is a strongly hybridized anti-bonding combination of the lone pair and chalcogen (VI) p-states. The magnitude of the gap is sensitive to the nature of the exchange interaction (local vs non-local) and the V–VI distance. We also find that the electronic structure near the gap can be reproduced extremely well within a local theory if one can manipulate the position of the filled d bands of Cu and Ag by an effectively large U.     

Adhesion and bonding of Pt/Ni and Pt/Co overlayers: Density functional calculations

The electronic and energetic properties of bimetallic surfaces Pt/Ni(111) and Pt/Co(111) are examined using the FP-LAPW (Full-PotentialLinearized Augmented Plane Wave) method by means of spin-polarized and non-polarized calculations. We present both the results of the shifts in the d-band centers when one metal (Pt) is pseudomorfically deposited on another with smaller lattice constant (Ni, Co) and those corresponding to the surface and adhesion energies. The surface is modeled by a seven layer slab separated in z direction by a vacuum region of six substrate layers. The results obtained for pure Ni, Co and Pt surfaces are presented in order to compare with experimental and theoretical data reported in the literature     

The configuration and electronic state of SO3 adsorbed on Au surface

We evaluated the adsorption of SO₃ molecule on Au (1 1 1) surface using first principles calculation by a slab model with a periodic boundary condition. We find that there are six stable adsorption configurations on an Au surface, where the SO₃ molecule is adsorbed above the three-fold fcc and hcp hollow sites and on the atop site. In two of these configurations, S and two O atoms are bound to the Au atoms, the next two configurations have all the three O atoms bound to the Au surface atoms, and the last two configurations have the S atom bound to an Au surface atom on the atop site and O atoms situated above the hollow sites. In these configurations, the electronic structures of SO₃ on the Au surface show that molecular orbitals of SO₃ and those of the Au surface are hybridized in the active metal d-band region, that the localized molecular orbitals in SO₃ are stabilized, and that charge is transferred from Au to S 3p by SO₃ adsorption on the Au surface though there is little other interaction of the S and O (bound to Au) component with Au. Moreover, the bond between the S and O atoms bound to Au is weakened due to SO₃ adsorption on the Au surface due to the charge polarization of the O-Au bond. This interaction is likely to encourage the S-O bond to break.     

Electronic properties of the magnetocaloric compound GdAl2: A Compton scattering study

We present Compton profiles of the GdAl₂ compound and its constituents using a 20Ci ¹³⁷Cs Compton spectrometer. The experimental Compton data have been analysed using theoretical data obtained from the spin polarised relativistic Korringa–Kohn–Rostoker (SPR-KKR) method and also the charge transfer on the formation of the compound. Both the experimental and the SPR-KKR theoretical Compton data support a charge transfer from Al→Gd in GdAl₂, which is in accordance with the conclusions drawn from the partial, total and integrated density of states of GdAl₂ and its constituents.     

Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen

We performed first-principle total-energy calculations to investigate the mechanism for the realization of high quality p-type ZnO codoped with lithium and nitrogen. We find that the higher hole concentrations measured in the codoped ZnO is related to decreased ionization energy of acceptors and reduction of compensations. The dual acceptor N_O-Li_Zn complex proposed in experiments is unstable. While in the (Li_I-N_O)-Li_Zn complex, where acceptor Li_Zn binds to the passivated (Li_I-N_O) complex is stable and acts as a single acceptor. The activation energy of this complex is about 60 meV lower than that of Li_Zn in Li-monodoped ZnO. The formation of inactive (Li_I-N_O) complexes creates a fully occupied impurity band just above the valence band maximum of ZnO. Thus Li atoms binding to this complex is activated by the electrons from the complex state rather than from the host states, accounting for decreased activation energy. Besides, Li_I⁺ and N_O⁻ bind tightly through the Coulomb interaction. Such binding will suppress the amount of compensating donor Li_I and limit the compensation for the desired acceptor Li_Zn.     

Theoretical study of the transition metal ring functionalized tips of open-ended (5,5) boron nitride nanotube (BNNT)

The nanotube with open edges is an excellent candidate for designing efficient tip for atomistic scanning probes or field emission display (FED) devices. In the present work, we have studied the functionalization of an open-ended boron nitride nanotube (BNNT) with a series of transition metal rings and the effects on the properties of open-ended BNNT through density functional theory (DFT) calculations. The results show that the TM-BNNT complexes are energetically favorable. Moreover, it is found that the functionalization (a) significantly decreases the band gap of BNNT to different degrees, which might effectively modify the electronic properties of the open-ended BNNT; and (b) efficiently lowers the work function, which might improve the field emission properties. Our results might be helpful not only to design specific BNNT-based tips but also to further discuss the chemical vapor deposition (CVD) growth of BNNT on nanoparticles.