Electrical and dielectric characterization of Au/ZnO/n-Si device depending frequency and voltage

Au/Zn O/n-type Si device is obtained using atomic layer deposition(ALD) for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state(Nss), barrier height(Φb), series resistance(Rs), donor concentration(Nd), and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 k Hz to 1 MHz and the direct current(DC) bias voltages in a range from-2 V to +2 V at room temperature are used. The main electrical parameters and dielectric parameters,such as dielectric constant(ε"), dielectric loss(ε"), loss tangent(tan δ), the real and imaginary parts of electric modulus(M and M), and alternating current(AC) electrical conductivity(σ) are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies.     

介质中双缺陷电荷对碳纳米管场效应晶体管量子输运特性的影响

用非平衡格林函数理论和紧束缚模型近似计算长沟道弹道输运p型碳纳米管场效应管中电流强度.研究当场效应管介质（SiO₂）中存在两个带电缺陷时，载流子散射所引起的电流强度减小和栅极阈值电压偏移量与缺陷位置的关系.介质中两个缺陷所带电荷Q₁=Q₂=+e（-e为电子电荷），都靠近源极或者都靠近漏极，或者一个电荷靠近源极另一个电荷靠近漏极.在工作状态下，所引起的电流强度相对减小比介质中只存在单个正电荷Q=+e且靠近源极（或漏极）时所引起的电流强度相对减小大得多.如果两个正电荷都在沟道中央附近，随着两个电荷的轴向距离减小，栅极阈值电压偏移的绝对值明显增加.栅极阈值电压偏移可达到-0.35 V.     

Influence of DC external magnetic field on AC transport current loss of HTS tape

We measured the AC transport current loss of Bi 2223 multifilament Ag-sheathed tape under DC external magnetic field of 0–0.2 T. There were discrepancies between the measured data and Norris' formula for elliptical model in the range of low value of I_p/I_c (I_p and I_c are peak of the AC transport current and critical current of the tape respectively), while without DC background field, the loss of the tape was close to Norris' formula. Theoretically speaking, even with the DC background field and decreased critical current the AC transport current loss of the tape follows Norris' formula which is derived from the Bean model. When DC background field is applied to the HTS tape, n value of the power law E–J characteristics decreases together with the decrease of J_c. Dependence of the AC transport current loss on the n value was analyzed by numerical calculation. The results show that the loss depends on the n value and that decrease of the n value is one of the causes of the discrepancies between the measured data and Norris' formula.     

不同样式的高功率微波对双极晶体管的损伤效应和机理

结合Si基n⁺-p-n-n⁺ 外延平面双极晶体管, 通过分析器件内部的温度分布变化以及电流密度和烧毁时间随信号幅值的变化关系, 研究了其在三角波信号、正弦波信号和方波脉冲信号等三种样式的高功率微波信号作用下的损伤效应和机理. 研究表明, 三种高功率微波信号注入下器件的损伤部位都是发射结, 在频率和信号幅值相同的情况下方波脉冲信号更容易使器件损伤; 位移电流密度和烧毁时间随信号幅值的增大而增大, 而位移电流在总电流所占的比例随信号幅值的增大而减小; 相比于因信号变化率而引起的位移电流, 信号注入功率在高幅值信号注入损伤过程中占主要作用. 利用数据分析软件, 分别得到了三种信号作用下器件烧毁时间和信号频率的变化关系式. 结果表明, 器件烧毁时间随信号频率的增加而增加, 烧毁时间和频率都符合t= af^b的关系式. 关键词： 双极晶体管 高功率微波 损伤机理 信号样式     

基于PSpice的半导体激光高频调制系统设计

为了实现高频率的调制激光输出,设计了一种驱动系统由信号放大、电流调制、过流保护和具有慢启动功能的直流偏置电路高度集成的半导体激光高频调制系统。此系统采用了结构简单的直接调制方式,运用线性调频的高频信号去控制半导体激光器发射激光的强度,从而实现高频调制。在运用OrCAD/PSpice对高频调制驱动系统进行模拟仿真的基础上,最终研制出的半导体激光高频调制系统实现了频率为40.02 MHz、直流偏置为493.326 mA、正弦波调制电流峰峰值为850 mA的高频调制输出,调制激光平均功率为300 mW。     

AC-induced DC voltage in HTS coil

The interplay between AC and DC currents in a High-T_c Superconducting (HTS) coil, made of multifilamentary silver-sheathed Bi-2223 tape, was investigated. We observed that the application of a small sinusoidal current in the frequency range of 50–500 Hz into the coil, while it is already carrying a DC current in the range of 16–22.5 A, caused an increase in the coil DC voltage. The DC voltage increment due to the AC signal is found to increase linearly with frequency and quadratically with amplitude. The DC voltage increment increases as the coil current grows towards its critical value of 22.2 A. This result may be important in some power applications such as fault current limiters (FCL) and superconducting magnet energy storage (SMES) based on HTS coils.     

Affine Lie algebras, string junctions and 7-branes

We consider the realization of affine ADE Lie algebras as string junctions on mutually non-local 7-branes in Type 1113 string theory. The existence of the affine algebra is signaled by the presence of the imaginary root junction δ, which is realized as a string encircling the 7-brane configuration. The level k of an affine representation partially constrains the asymptotic (p, q) charges of string junctions departing the configuration. The junction intersection form reproduces the full affine inner product, plus terms in the asymptotic charges.     

DC and analog/RF performance of C-shaped pocket TFET (CSP-TFET) with fully overlapping gate

A C-shaped pocket tunnel field effect transistor (CSP-TFET) has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effects of the pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current (I_on), on/off current ratio (I_on/I_off), subthreshold swing (SS) transconductance (g_m), cut-off frequency (f_T) and gain-bandwidth product (GBP) are investigated. The optimized CSPTFET device exhibits excellent performance with high I_on (9.98×10 ^{- 4} A/μm), high I_on/I_off (～ 10¹¹), as well as low SS (～ 12 mV/dec). The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices.     

Fermi-Pasta-Ulam β 格点链系统能量载流子研究

Fermi-Pasta-Ulam (FPU) β格点链中能量输运的载流子是孤子还是声子一直存在较多的争议. 本文通过单脉冲方法, 明确了一个能量波包在该格点链系统中从声子波包转变成为孤子波包的条件, 即波包能量达到一定阈值. 基于纯四次势链的声子真空效应, 构造了由FPU-β链与纯四次势链构成的双段链系统. 通过对比研究双段链系统和单段FPU-β链中的热流, 发现低温下声子是FPU-β链中能量的主要载流子, 而随着温度的升高孤子逐步取代声子成为能量的主要载流子. 关键词： Fermi-Pasta-Ulam格点链 声子 孤子 热传导     

Quantization of persistent currents in quantum dot at strong magnetic fields

We investigate equilibrium electron currents and magnetization in an ideal two-dimensional disc of radius R placed in a strong magnetic field H. The most striking results emerge when the conditions for the existence of edge and bulk states are met, namely . When the Fermi energy is locked on a Landau level, the current as a function of electron density is quantized in units of , where ω_c is the cyclotron frequency. We argue that this effect survives against weak disorder. It is also shown that the persistent current has an approximately periodic dependence on 1/H.     

An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

In this paper, a new current expression based on both the direct currect(DC) characteristics of the AlGaN/GaN high election mobility transistor(HEMT) and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the AlGaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of I–V, S-parameter, and radio frequency(RF) large-signal characteristics are compared for a self-developed on-wafer AlGaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-μm wide(Such an AlGaN/GaN HEMT is denoted as AlGaN/GaN HEMT(10 × 125 μm)). The improved large signal model simulates the I–V characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data.     

Physical simulations and experimental results of 4H—SiC MESFETs on high purity semi-insulating substrates

In this paper we report on DC and RF simulations and experimental results of 4H--SiC metal semiconductor field effect transistors (MESFETs) on high purity semi-insulating substrates. DC and small-signal measurements are compared with simulations. We design our device process to fabricate n-channel 4H--SiC MESFETs with 100~μm gate periphery. At 30~V drain voltage, the maximum current density is 440~mA/mm and the maximum transconductance is 33~mS/mm. For the continuous wave (CW) at a frequency of 2~GHz, the maximum output power density is measured to be 6.6~W/mm, with a gain of 12~dB and power-added efficiency of 33.7％. The cut-off frequency (f_T) and the maximum frequency (f_max) are 9~GHz and 24.9~GHz respectively. The simulation results of f_T and f_max are 11.4~GHz and 38.6~GHz respectively.     

Four-dimensional supersymmetric black holes of type IIA superstring

We systematically construct a large class of four-dimensional supersymmetric black hole solutions of toroidally compactified type IIA superstring theory by explicitly solving the Killing spinor equations. They correspond to orthogonally intersecting configurations in ten dimensions. With the Kaluza-Klein monopole, they are parameterized by four charges and preserve of the N = 8 supersymmetry. We found a simple map to associate each charge with the corresponding Killing spinor constraints. The embedding of the N = 4 supersymmetry of a toroidally compactified heterotic string into the N = 8 supersymmetry of the IIA superstring was explicitly shown. We also found explicitly the configurations with only Ramond-Ramond charges, and those with both Neveu-Schwarz Neveu-Schwarz charges and Ramond-Ramond charges, including the dilaton and the internal metrics. The T-dual of these configurations were shown to satisfy the Killing spinor equations as well.     

A large-scale wave-current coupled module with wave diffraction effect on unstructured meshes

Based on the extended mild-slope equation,a large-scale wave module is developed.By combining the eikonal equation and the modified wave action equation,the wave model can account for diffraction in most situations such as in the lee of islands and breakwaters,and using unstructured meshes provides great flexibility for modelling the wave in the complex geomorphology of barriers and islands,also allowing for refinement of the grid resolution within computationally important domains.The numerical implementation of the module is based on the explicit second-order upwind finite-volume schemes in geographic space,the Flux-Corrected Transport(FCT)algorithm in frequency space and the implicit Crank-Nicolson method in directional space.The three-dimensional hydrodynamic module is then modified to couple with the wave model,where the wave readily provides the depth-dependent radiation stress and the wave-induced turbulence coefficient for the current fields,and the wave propagation takes into account the current-induced advection,refraction and diffraction of wave energy and the effect of water level.The applicability of the proposed model to calculate Snell’s Law,wave transformation over the breakwaters and the elliptic shoal,wave propagation over the rip current field and the undertow on a sloping beach is evaluated.Numerical results show that the present model makes better predictions of the near-shore wave propagation and complex three-dimensional(3D)near-shore circulation driven by the waves,considering analytical solutions and experimental values.     

Phase slippage at the interface: normal metal/sliding charge-density wave

Phase slippage is required at the current electrodes of quasi-one-dimensional conductors with a charge density wave (CDW) ground state for the conversion from free to condensed carriers. We have performed at the ESRF high-resolution X-ray measurements of the spatially varying shift q(x) of the CDW satellite wave vector between current contacts on a thin NbSe₃ whisker in the sliding state. Applying direct currents, we observe at 90 K a steep exponential decrease of the shift within a few hundred microns from the contact. The CDW strain profile q(x) reflects the carrier conversion process, via nucleation and growth of phase-dislocation loops. Pulsed current measurements of the shift q show important differences between pulsed and dc current data, revealing a spatially dependent relaxational behaviour of the CDW strain. Using time-resolved high spatial resolution X-ray we observe at 300 μm from the electrode a stretched exponential-type decay of the shift q(t) upon switching off the current (T=75 K): q(t)=q₀[exp(−t/τ)^μ] with τ=23 ms and μ=0.36.     

横向交、直流电流对蓝青铜K0.3MoO3的I-V特性的调制效应

通过I-V特性测量，研究了横向交、直流电流对蓝青铜K_0.3MoO₃中电荷密度波(CDW)动力学行为的影响.实验结果表明，无论是直流还是交流，随着横向调制电流的增大，CDW滑移的阈值电场均会相应地减小；但横向交流电流的调制效应较小，可能更接近本征的效应.考察了横向交流电流的调制效应与其频率的依赖关系. 关键词： 0.3MoO₃单晶')" href="#">K_0.3MoO₃单晶 电荷密度波 横向电流调制效应     

氢化非晶硅薄膜晶体管的低频噪声特性

针对氢化非晶硅薄膜晶体管(hydrogenated amorphous silicon thin film transistor,a-Si:H TFT)的低频噪声特性展开实验研究.由测量结果可知,a-Si:H TFT的低频噪声特性遵循1/f~γ(f为频率,γ≈0.92)的变化规律,主要受迁移率随机涨落效应的影响.基于与迁移率涨落相关的载流子数随机涨落模型(?N-?μ模型),在考虑源漏接触电阻、局域态俘获及释放载流子效应等情况时,对器件低频噪声特性随沟道电流的变化进行分析与拟合.基于a-Si:H TFT的亚阈区电流-电压特性提取器件表面能带弯曲量与栅源电压之间的关系,通过沟道电流噪声功率谱密度提取a-Si:H TFT有源层内局域态密度及其分布.实验结果表明:局域态在禁带内随能量呈e指数变化,两种缺陷态在导带底密度分别约为6.31×10~(18)和1.26×10~(18)cm~(-3)·eV~(-1),特征温度分别约为192和290 K,这符合非晶硅层内带尾态密度及其分布特征.最后提取器件的平均Hooge因子,为评价非晶硅材料及其稳定性提供参考.     

青藏高原东北部闪电M变化多参量观测

利用闪电光通道高速摄像、 地面电场变化和峰值辐射强度同步资料, 对比分析了负地闪连续电流阶段和人工触发闪电放电过程中M变化特征. 结果表明, 通道亮度资料能够辅助地面电场波形来准确判断是否为真实的M过程. 在经典M变化产生前及其过程中会产生很多快速电场变化MP(称为预M变化)变化, 大量MP促成了M变化. MP变化和K变化在脉冲特征上没有太多差别, 产生的物理机制是相似的. MP变化是连续电流阶段快速电场变化, 是击穿过程引起的电荷快速流动的结果, 并伴有通道突然增亮和高强度辐射. M变化脉冲波形多数为单极性, 有正有负, 少数呈现不规则变化, 持续时间在0.1 ms之内.而经典M变化的U 形结构只适用于近闪, 波形是静电场所致, 持续时间约0.2–0.8 ms. MP和K变化都是击穿所致, 只是MP变化有电荷流入原回击通道, 而K变化没有. 关键词： 青藏高原 M变化')" href="#">M变化 MP变化')" href="#">MP变化 K变化')" href="#">K变化