Attenuation Characteristics and Sensitivity Analysis for Coplanar Waveguide

The behaviour of attenuation losses in Coplanar waveguides (CPW) is studied for quasi-planar transmission lines with constant characteristic impedance (Z₀) and resistivity, having different geometry's. This behavior helps in making a suitable choice of the type of structure and its dimensional parameters depending upon the application. Minimization of loss for a chosen substrate thickness, conductivity and impedance is analyzed. Dispersion characteristics of CPW have been plotted for various metallization thicknesses. A sensitivity analysis for effective dielectric constant with respect to various dimensional parameters of CPW is presented.     

Metallization thickness in bilateral and unilateral Finlines

The theory and numerical results are presented to the effective dielectric constant and characteristic impedance of bilateral and unilateral finlines with metallization thickness. The full wave analysis of the transverse transmission line — TTL method is used to determine the electromagnetic fields of the structure in Fourier transform domain — FTD. Applying the suitable boundary conditions and the moment method, a homogeneous matrix system is obtained and the effective dielectric constant is extracted. The characteristic impedance is obtained using the relation between the voltage in slot and the transmitted power.Computational programs are developed to obtain numerical results to the effective dielectric constant and characteristic impedance.     

衰减器对螺旋线慢波结构高频特性影响的理论研究

以加载衰减器的螺旋线慢波结构作为研究对象，采用螺旋导电面模型，用真空层模拟螺旋带的厚度，用均匀介质层等效分立的介质夹持杆，并考虑到各横向区域横向传播常数的不同，得到了任意次模式的色散方程和耦合阻抗的表达式. 在此基础之上，分析了衰减器对主模和-1次模式的衰减常数、相位常数和耦合阻抗的影响.所得结果对设计衰减器具有理论指导意义，为螺旋线慢波系统高频特性的改善以及反射振荡和返波振荡的抑制提供了理论依据. 关键词： 螺旋线 行波管 衰减 色散     

Directional couplers in trapped image guide configuration

Dispersion characteristics and wave impedance of trapped coupled image guides are computed by using mode matching techniques. Dispersion curves for trapped coupled image guide are plotted for various dielectric materials and dimensional parameters. The hybrid directional couplers in the above configuration have been theoretically designed by computing the normalization propagation constant.     

Dielectric layer-dependent surface plasmon effect of metallic nanoparticles on silicon substrate

The electromagnetic interaction between Ag nanoparticles on the top of the Si substrate and the incident light has been studied by numerical simulations. It is found that the presence of dielectric layers with different thicknesses leads to the varied resonance wavelength and scattering cross section and consequently the shifted photocurrent response for all wavelengths. These different behaviours are determined by whether the dielectric layer is beyond the domain where the elcetric field of metallic plasmons takes effect, combined with the effect of geometrical optics. It is revealed that for particles of a certain size, an appropriate dielectric thickness is desirable to achieve the best absorption. For a certain thickness of spacer, an appropriate granular size is also desirable. These observations have substantial applications for the optimization of surface plasmon enhanced silicon solar cells.     

集成电光器件电极的数值分析法

本文描述了一种数值分析方法,计算了集成光学中电光器件电极的电场分布。在电极无限薄的假设条件下,把数值分析法计算的结果同保角变换法的结果进行了比较,并讨论了电极厚度和缓冲层对电场以及特征参量的影响。计算结果表明电极厚度对电场分布影响较小,但特征阻抗和有效介电常数随电极厚度增加明显减小。而且使用缓冲层使波导的有效深度增加,电场强度减小,特征阻抗和有效介电常数都发生很大变化。利用这些特性可对集成光学电光器件的电极进行优化设计。     

Enhanced dielectric constant resolution of thin insulating films by electrostatic force microscopy

Electrostatic force microscopy has been shown to be a useful tool to determine the dielectric constant of insulating films of nanometer thicknesses that play a key role in many electrical, optical and biological phenomena. Previous approaches have made use of simple analytical formulas to analyze the experimental data for thin insulating films deposited directly on a metallic substrate. Here we show that the sensitivity of the EFM signal to changes in the dielectric constant of the thin film can be enhanced by using dielectric substrates with low dielectric constants. We present detailed numerical calculations of the tip-sample electrostatic interaction in the following setup: an insulating thin film, a dielectric substrate (or spacing layer) of known low dielectric constant and a metallic electrode. The EFM sensitivity to the dielectric constant increases with the thickness of the spacing layer and saturates for thicknesses above 100-300 nm, when it is close to that of an infinite medium.     

Coplanar Waveguide Characterization with Thick Metal Coating

Coplanar waveguides (CPW) used in microwave integrated circuits are significantly dispersive. An analytical approximation to the frequency dependence of both _eff and _c of CPW with finite metallisation thickness and conductivity is discussed. The effect of increasing loss tangent on dielectric constant is also presented.     

Critical thicknesses of electrostatic powder coatings from inside

A simple electrostatic model is applied to the charge powder coating of a grounded conductor eventually covered by insulating layers. The electric field inside the powder coating and its evolution during the process are established with also the corresponding evolution in the dielectric layer and some practical consequences are also discussed. The thickness of the charged powder layer is limited by two types of process: a self-limiting process related to the vanishing field in the air gap and a field strength process occurring on one of the two sides of the coating–dielectric interface. Inside the powder coating, the electric field induces an increased electrostatic pressure on the powder grains at the substrate–coating interface and a vanishing pressure on the grains at the coating–air interface. This internal field is amplified into air bubbles and it may be responsible for the back ionisation process and of the formation of moon craters via the ionisation of the air molecules followed by the pressure exerted by the ions pushed in the direction of the free surface. For each of these limits, analytical expressions are established and they permit to identify the role of physical properties of the deposited powder (particle size and dielectric constant) as well as the role of thickness, structure, and dielectric constant of the insulating substrate. The present approach explains the difficulty in obtaining thick coatings on thick insulating substrates or thick coatings from the use of too fine powder grains. Finally, different behaviours as a function of the size of the deposited powder grains are deduced from the contribution of the electric field to the velocity of the particles sticking to the surface. Then and for the first time, the present contribution underlines the important role of the subsurface composition and the need to characterize the structure, dimension and dielectric constant of this subsurface for various applications concerning electrostatic spraying and powder painting of plastics and of insulating coatings on metallic work pieces.     

不同厚度衬底上矩形孔金属结构的太赫兹透射特性数值分析

利用时域有限差分法对不同材料和厚度衬底上矩形孔金属结构太赫兹（THz）波的透射特性进行了数值分析。研究表明：矩形孔金属阵列对THz光谱具有频率选择特性,这为太赫兹滤波功能器件的开发提供了基础。在实际应用中,这种金属微结构常常需要制备在某种衬底上,而衬底材料及厚度无疑会对其太赫兹透射特性带来影响。研究了不同衬底材料和衬底厚度的矩形孔金属结构太赫兹透射性质,通过数值模拟研究发现,对于同一种衬底材料,随着衬底厚度的增加,矩形孔金属结构的透射峰峰位向低频移动。比较高阻硅和聚四氟乙烯两种衬底材料发现,高介电常数的硅衬底引起的透射峰移动更为明显。     

Behaviour of transmittance and phase change on transmission with film thickness at intermediate thicknesses

The behaviour of the optical functions T (transmittance) and X_t (phase change on transmission) for an absorbing film have been investigated as the film thickness was increased from a small fraction of a wavelength up to a thick solid. When plotted against thickness, the values of T oscillated at a frequency related to the quantity, x=2πd/λ which is equal to the phase thickness divided by the refractive index. Ultimately, for real materials, the oscillations were damped to zero due to the absorption term in the complex dielectric constant of the film material. In the case of X_t, the most notable feature was the sudden phase changes of ±π which occurred repeatedly as the thickness increased and the values of x at which this occurred could be related to the conditions for constructive or destructive interference between light rays coming from the top and bottom of the film.     

膜层厚度对金属薄膜光学常数的影响

从麦克斯韦方程出发,可以得到超薄金属膜层光学常数n、k与其厚度有关系的理论依据。采用电阻热蒸发和电子束热蒸发的方法在K9玻璃基底上分别沉积了不同厚度的Cu膜、Cr膜、Ag膜,由椭偏法检测、Drude模型拟合,获得了不同厚度Cu膜、Cr膜、Ag膜光学常数n、k随波长λ的变化规律。超薄金属薄膜与块状金属的光学常数相差较大,随着薄膜厚度的增加,n、k值趋近于块状金属。通过对样品膜层吸收、色散特性的分析,发现连续金属薄膜在可见光波段对长波的吸收较大,而且相比于介质薄膜平均色散率高10mn～102nm量级。     

Vibration of moderately thick square orthotropic stepped thickness plates

Numerous studies that address the vibration of stepped thickness plates are reported in the literature. Predominately, classical plate theory has been used to formulate studies for both isotropic and anisotropic stepped plates. Mindlin plate theory has been employed to obtain results for thick isotropic stepped thickness plates. Exact solutions, Rayleigh-Ritz, differential quadrature and finite element methods have been employed to compute results for frequency of vibration. Results for frequency of vibration for thick orthotropic stepped thickness plates are presented here using orthorhombic material properties of aragonite. The finite element method has been used to compute frequencies and determine mode shapes for simply supported and clamped square Mindlin plates.     

Enhanced laser induced damage threshold of dielectric antireflection coatings by the introduction of one interfacial layer

A new method for increasing laser induced damage threshold (LIDT) of dielectric antireflection (AR) coating is proposed. Compared with AR film stack of H2.5L (H:HfO2, L:SiO2) on BK7 substrate, SiO2 interfacial layer with four quarter wavelength optical thickness (QWOT) is deposited on the substrate before the preparation of H2.5L film. It is found that the introduction of SiO2 interfacial layer with a certain thickness is effective and flexible to increase the LIDT of dielectric AR coatings. The measured LIDT is enhanced by about 50%, while remaining the low reflectivity with less than 0.09% at the center wavelength of 1064 nm. Detailed mechanisms of the LIDT enhancement are discussed.     

Effects of manufacturing tolerances on the electrical performance of suspended and inverted microstrip lines

Effects of manufacturing tolerances in the dimensions and parameters of suspended and inverted microstrip lines on the electrical performance of these lines have been studied through sensitivity analysis. The closed-form expressions recently given by Pramanick and Bhartia for the analysis of these lines have been used to derive the mathematical expressions for various sensitivities and the dependence of sensitivities on the aspect ratios and on the substrate dielectric constant has been depicted graphically. Generally speaking, the effects of tolerances are seen to be reflected much more sharply in the sensitivities of the characteristic impedance than in those of the effective dielectric constant. Many other useful inferences are also drawn from the sensitivity graphs. The conclusions are presented in tabular form, so as to be of direct help to the user.     

Optical properties change of oxide film — metal system during the film growth: computer simulation

Results of computer simulation of reflective properties of the oxide film-metal system in the process of oxidation in the air environment are presented. The complex refractive indices for oxide film and metal were used as the initial data. Thin films (the thickness is comparable with the wavelength of incident radiation) and thick films (thickness is much larger than the wavelength of incident radiation) are considered. The parameter characterizing the cyclic character of system reflectivity during the growth of film thickness was derived for the thin film. It is shown that the cyclic parameter does not depend on optical properties of a metal substrate. In the air environment, this parameter is determined by a complex refractive index of the film, its thickness, and direction of incident radiation. Relationships for the estimate of system reflectivity in the process of oxide film growth are presented for the thick film.     

Dispersion characteristics of broadside coupled dielectric image guide at millimeter wave frequencies

Dispersion characteristics and wave impedance for the even and odd modes of the broad side coupled dielectric image guides are computed by using mode matching techniques. Dispersion curves for broadside image guide are plotted for various dielectric materials and dimensional parameters as a function of frequency. Normalized electric field for dominant electric field component E of TM even and odd modes for various half spacings between two dielectric slabs of broadside coupled image guide have been plotted. Polysterene ( r=2.56) and Stycast ( r=3.4) have been used as dielectric materials in fabricating broadside coupled image guide. This broadside coupled dielectric guide is very convenient as compared to the other dielectric guides. Since in case of broadside coupled image guide the dielectric slab can be bonded to the side metallic walls using some low loss adhesive material, while in other coupled dielectric guides the dielectric slab have to be supported by some low dielectric constant material (Eccofoam with r=1.02) to maintain the proper distance of side metallic walls from the dielectric slab. Since this structure is symmetrical, this configuration can be analysed in terms of even and odd mode phase velocities. The difference in these even and off mode phase velocities can be used to determine the coupling between coupled dielectric slab. Various couplers in this configuration can be realised.     

Influence of substrate process tolerances on transmission characteristics of frequency-selective surface

Frequency-selective surface （FSS） is a two-dimensional periodic structure consisting of a dielectric substrate and the metal units （or apertures） arranged periodically on it. When manufacturing the substrate, its thickness and dielectric constant suffer process tolerances. This may induce the center frequency of the FSS to shift, and consequently influence its characteristics. In this paper, a bandpass FSS structure is designed. The units are the Jerusalem crosses arranged squarely. The mode-matching technique is used for simulation. The influence of the tolerances of the substrate＇s thickness and dielectric constant on the center frequency is analyzed. Results show that the tolerances of thickness and dielectric constant have different influences on the center frequency of the FSS. It is necessary to ensure the process tolerance of the dielectric constant in the design and manufacturing of the substrate in order to stabilize the center frequency.     

Nanoporous Al sandwich foils using size effect of Al layer thickness during Cu/Al/Cu laminate rolling

The roll bonding technique is one of the most widely used methods to produce metal laminate sheets. Such sheets offer interesting research opportunities for both scientists and engineers. In this paper, we report on an experimental investigation of the ‘thickness effect’ during laminate rolling for the first time. Using a four-high multifunction rolling mill, Cu/Al/Cu laminate sheets were fabricated with a range of thicknesses (16, 40, 70 and 130 μm) of the Al layer. The thickness of the Cu sheets was a constant 300 μm. After rolling, TEM images show good bonding quality between the Cu and Al layers. However, there are many nanoscale pores in the Al layer. The fraction of nanoscale pores in the Al layer increases with a reduction in the Al layer thickness. The finite element method was used to simulate the Cu/Al/Cu rolling process. The simulation results reveal the effect of the Al layer thickness on the deformation characteristics of the Cu/Al/Cu laminate. Finally, we propose that the size effect of the Al layer thickness during Cu/Al/Cu laminate rolling may offer a method to fabricate ‘nanoporous’ Al sandwich laminate foils. Such foils can be used in electromagnetic shielding of electrical devices and noisy shielding of building.     

Dispersion in finlines on semiconductor and the S-parameters of a step discontinuity

The Transverse Transmission Line method is used for the characterization of bilateral and unilateral finlines on a semiconductor substrate and in conjunction with the modal method, for the calculation of the scattering parameters due to a step discontinuity on a unilateral finline with a lossless dielectric substrate.Numerical results of the effective dielectric constant, attenuation constant and characteristic impedance for the bilateral and unilateral finlines on semiconductor substrates, and results of scattering parameters of a step discontinuity for unilateral finline, are presented.