Electrical properties of molybdenite single crystals

Molybdenite crystals used in the present work were grown by direct vapour transport or sublimation method. The electrical resistivities and I-V characteristics were measured at different temperatures in the symmetry plane. The room temperature resistance of a specimen annealed for different periods has also been measured. These results are described and discussed.     

离子注入金红石单晶生成的金属Ni纳米晶的磁学性能研究

 研究了能量为64keV、注量1×10¹⁷cm^-2的Ni离子注入金红石TiO₂单晶制备的植入金属纳米晶的微观结构和磁学性能。注入层的结构和磁学性能采用透射电子显微分析（TEM）和超导量子干涉磁强计（SQUID）进行分析。结果表明，金红石单晶中有尺寸为3～18nm的金属Ni纳米晶生成，注入区域基体明显非晶化。10K温度下金属Ni纳米晶的矫顽力约为16.8kA·m^-1，比Ni块材的矫顽力大。样品的零场冷却/有场冷却（ZFC/FC）曲线表明，金属Ni纳米晶的截止温度约为85K。     

离子注入金红石单晶生成的金属Ni纳米晶的磁学性能研究

研究了能量为64keV、注量1×1017cm-2的Ni离子注入金红石TiO2单晶制备的植入金属纳米晶的微观结构和磁学性能。注入层的结构和磁学性能采用透射电子显微分析（TEM）和超导量子干涉磁强计（SQUID）进行分析。结果表明,金红石单晶中有尺寸为3～18nm的金属Ni纳米晶生成,注入区域基体明显非晶化。10K温度下金属Ni纳米晶的矫顽力约为16.8kA·m-1,比Ni块材的矫顽力大。样品的零场冷却/有场冷却（ZFC/FC）曲线表明,金属Ni纳米晶的截止温度约为85K。     

一维多孔硅光子晶体反射特性及制作的理论研究

在一维光子晶体光学传输特性理论的基础上,运用传输矩阵法推导了一维多孔硅光子晶体的反射特性,并对其反射特性与结构参数的关系进行了分析。给出了采用脉冲电化学阳极腐蚀法制备一维多孔硅光子晶体的制作模型。利用计算机数值模拟的方法给出了各种一维多孔硅光子晶体的典型反射谱。为多孔硅光子晶体的实际应用奠定了理论基础。     

A quantitative study of diffracted X-ray intensities from type I natural diamond crystals by high resolution X-ray diffractometry and comparison with nearly perfect silicon single crystals

Results of accurate measurements of peak and integrated intensities of , 111 and 333 reflections of natural diamonds of type I and nearly perfect silicon single crystals are reported. Highly monochromated and collimated MoK _{α 1} exploring beam was used. A quadrupole crystal X-ray diffractometer was employed in (+, −, +) and (+, −, +, −) settings. (111) platelets of diamond and silicon crystals with thicknesses of about 1 mm were selected. High resolution diffraction curves, stationary and traverse topographs were recorded. Diffraction curve half widths of diamond and silicon crystals were in the range: 45–200 arc sec and a few arc sec respectively. The experimental values of integrated intensitiesρ for diamond crystals were found to lie between the theoretical values for ideally perfect and ideally imperfect crystals. Experimental values ofρ for silicon were closer to the “perfect crystal” values. This is consistent with the results of diffractometric and topographic evaluation. The peak intensities of all reflections were higher for diamond crystals in comparison to the silicon crystals. The ratioI _C/I _Si lies in the range 1.3 (111 reflection) to 10.5 and (333) reflections. This is anomalous and cannot be accounted for by considering the degree of perfection, structure factor and difference in absorption coefficient.     

Uniaxial stress dependence of the dielectric properties of barium titanate single crystals

BaTiO₃ single crystals were grown by the melt-grown method. The effect of uniaxial pressure (0–1700 bar) on the dielectric properties of these crystals has been systematically studied. The external stress showed obvious effects on these properties. An increase in the difference between the Curie T_c and Curie–Weiss T₀ temperatures induced by the applied pressure is observed. This could be ascribed to the inducing of non-ferroelectric cubic islands in the tetragonal phase by the applied compressive stress. On the other hand, the pressure behavior of thermal hysteresis and the ??/?T vs. T plot strongly suggests that the phase transition changes to second-order type with increasing pressure. The Curie–Weiss constant obtained from a modified Curie–Weiss law strongly decreases with increasing pressure, suggesting that the mechanism of phase transition is going to order–disorder type. An increase in the difference between the Curie T_c and Burn's T_B temperatures with increasing pressure is observed. This could be ascribed to the narrowing of the temperature range on which the Curie–Weiss law is valid. In general, the obtained results are in good agreement with hydrostatic pressure data. Some kind of relaxation near T_c, which is strongly coupled with strain caused by applied compressive stress, is postulated.     

Electromagnetic radiation of MeV electrons in thick aligned single crystals

Abstract

Earlier published theoretical models for MeV electrons are generalized in this paper. Different theoretical predictions for planar channeling and accompanying electromagnetic radiation in thick crystals are presented. A comparative analysis of theoretical and experimental spectra of photon radiation is given. Thickness dependences of channeling quantum state populations, radiation line broadening and photon flux intensities are obtained. The existence of planar electron channeling at 54 MeV in a silicon single crystal with a thickness of several millimetres is shown.     

Temperature-dependent optical properties of GaSe layered single crystals

Optical properties of GaSe single crystals have been investigated using temperature-dependent transmission and room temperature reflection measurements in the wavelength range of 380–1100 nm. The analysis of the absorption data at room temperature showed the existence of indirect transitions in the crystal with energy band gap of 1.98 eV. Temperature dependence of the transmission measurements revealed the shift of the absorption edge toward lower energy as temperature is increased from 10 to 280 K. The rate of change of the indirect band gap was found as γ = ?6.6 × 10^?4 eV/K from the analysis of experimental data under the light of theoretical relation giving the band gap energy as a function of temperature. The absolute zero value of the band gap energy and Debye temperature were calculated from the same analysis. The Wemple–DiDomenico single-effective-oscillator model applied to refractive index dispersion data was used to determine the oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index values.     

Specific heat and electrical conductivity of deuterated triglycine selenate single crystals

Measurements of the specific heat were carried out on deuterated trigylcine selenate (DTGSe) single crystals to clarify its critical nature near the ferroelectric transition point (T_c ). The results obtained have indicated that DTGSe crystals deuterated by 90% exhibit a first-order phase transition.

This paper presents also the electrical conductivity (δ) of DTGSe crystals. The deuterium substitution induces an increase in the Curie point T_c , and a decrease in the conductivity in the para- and ferroelectric phases accompanied by an increase in the activation energy (W) in both phases.     

A collection of 505 papers on false or unconfirmed ferroelectric properties in single crystals,ceramics and polymers

This collection presents 505 papers on ferroelectricity in single crystals, ceramics and polymers in which pointed or elliptical hysteresis loops would testify to their ferroelectric properties. In some papers, the authors ensure that ferroelectricity can occur even in materials that do not have a polar axis of symmetry.     

Magnetic and magnetoelastic properties of GdZn single crystals

The magnetic and magnetoelastic properties of GdZn have been investigated by various ways: magnetization, magnetic susceptibility, magnetocaloric effect, pressure dependence of the Curie temperature, spontaneous magnetostriction, parastriction and sound velocity measurements. The γ-mode strain is large for an S-state ion, and two orders of magnitude larger than the ?-one. Both the first-order B^γ,2 and the three isotropic second-order magnetoelastic coefficients exhibit a m²(1 ? 0.5m²) thermal variation (where m(T, H) is the reduced magnetization), which differs from the classical behaviour. All the results suggest a noticeable contribution of the conduction band to the magnetism of GdZn.     

Influence of ultrasonic vibrations on the growth of semiconductor single crystals

The influence of ultrasonic vibrations on striations in InSb, GaAs and Bi-Sb alloy single crystals grown by a modified Czochralski method was investigated. Ultrasonic vibrations at frequencies of 0.15, 0.25, 0.6, 1.2, 2.5, 5 or 10 MHz were introduced into the melt parallel to the pulling axis. The introduction of ultrasonic vibrations at a frequency up to 5 MHz eliminates the striations in GaAs and Bi-Sb alloy single crystals growing with constant diameter. It was found that for Bi-Sb alloy single crystals of constant diameter growth, after ‘processing’ of the melt with ultrasonic vibrations, the striations do not reappear until after 2 h. The effectiveness of the influence of the ultrasonic vibrations on the decrease of growth striations in InSb, GaAs and Bi-Sb alloy growing crystals was estimated with the help of the calculation of the sound absorption coefficient.     

Growth of profiled single crystals of lithium iodate using a shaper from polymer nanoparticles

A possibility of growth of profiled single crystals of α-LiIO₃ with a hollow channel using a shaper from polymer nanoparticles is showed. A method of creating the nanoparticles of polystyrene is described.     

Physical properties of single crystalline BaSn5

We present a comprehensive study of the binary intermetallic superconductor, BaSn₅. High-quality single crystalline BaSn₅ was grown out of a Sn flux. Detailed thermodynamic and transport measurements were performed to study BaSn₅'s normal and superconducting state properties. This material appears to be a strongly coupled, multiband superconductor. H _c2(T) is almost isotropic. De Haas–van Alphen oscillations were observed and two effective masses were estimated from the FFT spectra. Hydrostatic pressure causes a decrease in the superconducting transition temperature at the rate of ≈?0.053?±?0.001?K/kbar.     

High sensitive and ultrafast UV photodetector based on ZrO_2 single crystals

The fast-response ultraviolet (UV) photoelectric effect in ZrO2 single crystals with interdigitated electrodes has been investigated experimentally at room temperature. The photovoltage of ZrO2 single crystals exhibits a linear dependence on applied bias and light power density. The photocurrent responsivity to the UV light with a wavelength of 253.65 nm is 9.8 mA/W. For the photovoltaic pulse, a rise time of 501 ps and a full width at half maximum of 1.5 ns have been obtained, when the ZrO2 single crystal ...     

Pr替代YPBCO超导单晶的峰效应研究

采用TSSG法在1 atm氧气氛下生长出Y1-xPrxBa2Cu3O7(x=0.07215)超导单晶样品;测量了该单晶样品在不同温度下的磁特性;根据Bean临界态模型,计算出不同温度下的临界电流密度Jc对磁场H的依赖关系;在对该样品的直流磁化研究中观测到了峰效应。随着温度的降低,样品的临界电流密度明显增加。     

Defects generated by irradiation with gamma rays in lead doped KCl–KBr mixed single crystals

In this work we report the behavior of solid solutions of lead-doped KCl–KBr mixed single crystals subjected to gamma irradiation. Various composition of KCl_1−xBr_x (x=0.02, 0.35, 0.50, 0.65, 0.85) doped with 20–40 ppm of Pb²⁺ were used and exposed to ionizing radiation. The defect production seems to be correlated with the observed increasing integrated thermoluminescence glow curve as a function of irradiation at high 10 kGy dose as well as in the low 2.2–130 dose Gy range. The analysis shows the potential use of these mixed crystals as radiation detector. The defects generated by irradiation were monitored by the optical absorption spectrum and the thermally stimulated luminescence.     

High-performance pyroelectric single crystals for uncooled infrared detection applications

Uncooled pyroelectric infrared detectors based on ferroelectric single crystals 0.74Pb(Mg_1/3Nb_2/3)O₃–0.26PbTiO₃ (PMN–0.26PT) were fabricated. The performances of pyroelectric detectors dependence on detector fabrication temperature, absorption layer, and element thickness were compared. The room-temperature voltage responsivity (R_v) of 200 V/W and specific detectivity (D^*) of 10⁸ cm Hz^1/2/W at 12.5 Hz have been achieved. The results reveal that the better pyroelectric response can be expected by controlling temperature below 70 °C during the fabrication of the pyroelectric detectors, selecting absorption layer with high absorption coefficient, and decreasing the thickness of the elements.     

Magnetic and transport properties of transition-metal implanted ZnO single crystals

ZnO single crystals were implanted with Mn, Co and Ni with fluences between 1 × 10¹⁶ cm^-2 and 1 × 10¹⁷ cm^-2 and energy of 200 keV. Results indicate that aggregation of transition metal ions in the as implanted state occurs only in the case of Ni. After an annealing stage to recover the ZnO structure aggregation occurs for the higher fluences of all implanted species. For lower concentrations paramagnetic behaviour with magnetic moments close to those of individual ions is observed. No polarised impurity band is formed as a result of the presence of transition metal ions and all samples show electrical conduction by carriers in extended states of ZnO. Significant values of magnetoresistance are measured at low temperatures, where electrical transport is described by hopping mechanisms between localized states. The sign of the magnetoresistance is dependent of the doping ion and is correlated with the observed aggregation.