High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga_2O_3 thin film

Si-doped β-Ga_2O_3 films are fabricated through metal-organic chemical vapor deposition(MOCVD). Solar-blind ultraviolet(UV) photodetector(PD) based on the films is fabricated by standard photolithography, and the photodetection properties are investigated. The results show that the photocurrent increases to 11.2 m A under 200 μW·cm-2254 nm illumination and ±20 V bias, leading to photo-responsivity as high as 788 A·W~(-1). The Si-doped β-Ga_2O_3-based PD is promised to perform solar-blind photodetection with high performance.     

All-solid-state continuous-wave frequency-doubling Nd:LuVO<Subscript>4</Subscript>/GBCOB laser at 533 nm

We report an efficient intracavity second-harmonic generation (SHG) at 1066 nm in a non-linear optical crystal, GdCa₄O(BO₃)₃ (GdCOB), performed with a diode end pumped continuous-wave (CW) Nd:LuVO₄ laser. In the case of a laser with a Nd:LuVO₄ crystal frequency-doubled with a GdCOB crystal cut for type I frequency doubling. A CW SHG output power of 5.18 W has been obtained using a 10 mm long GCOB crystal. The optical conversion efficiency with respect to the incident pump power was 28.5%.     

Investigation on intracavity second-harmonic generation of a new Li-doped GdCa4O(BO3)3 crystal

Efficient intracavity second-harmonic generation (SHG) has been realized in a new Li-doped GdCa₄O(BO₃)₃ (GdCOB) crystal. 2.55 W CW SHG output power was obtained with an optical conversion efficiency of 19.6%, while the effective intracavity SHG efficiency was determined to be 44%. Compared to that of undoped GdCOB crystal, the effective SHG efficiency of the Li-doped GdCOB crystal was found to increase by 12.5%.     

Efficient intracavity second-harmonic generation at 1063 nm in a GdCOB crystal

We report an efficient intracavity second-harmonic generation (SHG) at 1063 nm in a non-linear optical crystal, GdCa₄O(BO₃)₃ (GdCOB), performed with a diode end pumped continuous-wave (CW) Nd:GdVO₄ laser. In the case of a laser with an a-cut 0.4 at % Nd:GdVO₄ crystal frequency-doubled with a GdCOB crystal cut for Type I frequency doubling. A CW SHG output power of 2.25 W has been obtained using a 15 mm long GCOB crystal. The optical conversion efficiency with respect to the incident pump power was 12.4%.     

产生蓝色相干辐射和实现Nd:YAG 1.0642μm倍频90°非临界相位匹配的Nb:KTiPO4

本文报道了用熔盐顶部籽晶法生长Nb浓度(0～13)mol%的Nb:KTP晶体的倍频的Ⅱ型相位匹配的截止波长和Nd:YAG 1.0642μm及Nd:YA1O3 1.0795μm激光在这些晶体中倍频的最佳相位匹配角的测量结果.从中可看出,由于Nb5+的引入使KTP晶体倍频的Ⅱ相位匹配的截止波长有效蓝移,目前已使截止波长蓝移至937nm且有效产生468.5nm的倍频蓝光.同时Nb5+的引入使Nd:YAG 1.0642μm激光和Nd:YA1O3倍频的最佳相位匹配方向产生很大的变化,目前已使Nb:KTP晶体倍频的最佳相位匹配方向为θ＝88.32°、Φ＝0°,非常接近于90°非临界相位匹配方向.     

A CdS-Si photodetector for integrated optics

Photodetectors based on nCdS-pSi heterojunctions and operated in both photovoltaic and photoconductive models, have been integrated with planar optical waveguides. The detector structure consisted of a 7059 glass waveguide which was terminated over the nCd-pSi junction. Prism couplers and directional coupling action between a ribbon fibre and the glass film have been used to launch light into the waveguides. A maximum responsivity of 1mV·μW^-1 was recorded at 633 nm with the diode operating in the photovoltaic mode and 0.06μA·μW^-1, corresponding to a quantum efficiency of 12%, in the photoconductive mode.     

产生蓝色相干辐射和实现Nd:YAG 1.0642μm倍频90°非临界相位匹配的Nb:KTiPO4

本文报道了用熔盐顶部籽晶法生长Nb浓度(0～13)mol%的Nb:KTP晶体的倍频的Ⅱ型相位匹配的截止波长和Nd:YAG1.0642μm及Nd:YA1O₃1.0795μm激光在这些晶体中倍频的最佳相位匹配角的测量结果.从中可看出,由于Nb⁵⁺的引入使KTP晶体倍频的Ⅱ相位匹配的截止波长有效蓝移,目前已使截止波长蓝移至937nm且有效产生468.5nm的倍频蓝光.同时Nb⁵⁺的引入使Nd:YAG1.0642μm激光和Nd:YA1O₃倍频的最佳相位匹配方向产生很大的变化,目前已使Nb:KTP晶体倍频的最佳相位匹配方向为θ=88.32°、Φ=0°,非常接近于90°非临界相位匹配方向.     

高效率LD端面抽运准连续355 nm激光器

报道了一台激光二极管（LD）端面抽运Nd：YVO₄晶体腔内倍频和腔外和频相结合的声光调Q准连续355 nm 紫外激光器。采用LD端面抽运双侧翼键合YVO₄基质的Nd：YVO₄晶体,在腔内置入Ⅰ类相位匹配的LiB₃O₅（LBO）晶体进行倍频实现1 064 nm和532 nm双波长准连续激光输出,通过消色差透镜将双波长激光聚焦耦合到Ⅱ类相位匹配的LBO 晶体中进行和频,并采用双向和频光路,获得了高效率、高光束质量、高重复频率的准连续355 nm 紫外激光输出。在抽运功率为28.6 W、重复频率为20 kHz时,355 nm激光最大输出功率4.2 W,脉宽为20.6 ns,光-光转换效率为14.7%,激光器光束质量因子M_x²和M_y²分别为1.29和1.23。     

CdSe:Nd纳米晶及CdSe:Nd@SiO2核壳结构的合成及发光性能

利用有机相法合成Nd³⁺掺杂CdSe纳米晶（CdSe∶Nd）,通过X射线粉末衍射（XRD）、透射电镜（TEM）、紫外吸收光光谱及荧光光谱表征,证明Nd³⁺已经成功掺入到CdSe的晶格中。与纯CdSe纳米晶相比,CdSe∶Nd纳米晶的结构仍为立方晶型,且形貌近似球形,均匀分散,粒径约为2~4 nm。紫外吸收峰和荧光发射峰都发生红移,而且掺杂后的CdSe∶Nd纳米晶量子产率也提高,这可能是由于掺杂Nd³⁺引入了新的杂质能级,带隙减小。为了实现CdSe∶Nd纳米晶的可加工性和功能性,通过微乳法合成SiO₂壳包覆的CdSe∶Nd纳米球（CdSe∶Nd@SiO₂纳米球）,CdSe∶Nd@SiO₂纳米球呈均匀球形,直径约为100~115 nm,并且包壳后的CdSe∶Nd@SiO₂纳米球发射峰（581 nm）与CdSe∶Nd纳米晶（598 nm）相比,发光强度提高且发射峰蓝移,蓝移约为17 nm,可能是因为SiO₂壳可以减少纳米晶表面的非辐射跃迁以及改善表面缺陷导致的。     

激光自倍频晶体研究和应用进展

激光自倍频晶体是一类同时具有激光和非线性效应的复合功能晶体。以激光自倍频晶体制作的全固态激光器具有体积小,调整方便,稳定性高等优点。自1970年代以来,以LiNbO3,YAl3(BO3)4倍频晶体为基质的激光自倍频晶体实现了自倍频激光运转。近年来,以RECa4O(BO3)3(RECOB)为基质的激光自倍频晶体受到重视和广泛研究。本文从对激光晶体、非线性光学晶体及激光自倍频晶体的基本要求出发,在综述激光自倍频晶体研究历史的基础上,讨论了激光自倍频晶体中的基波和倍频光,探讨了NYAB和Nd:GdCOB一类晶体中晶体长度,Nd3+浓度和效率之间的关系。理论估算表明,当浓度适当,晶体长度10mm时,这两类晶体的光–光转换效率可达30%以上。本文总结了NYAB系列晶体的研究历程及RECOB系列激光自倍频研究的思路及取得的成果。在最近10年中,利用山东大学生长的Yb:YAB晶体,获得1.1 W自倍频绿光,光光转换效率为10%;在RECOB体系中,比较了各种晶体的特点,选定Nd:GdCOB为主要研究对象,经过晶体掺钕浓度和长度关系,位相匹配方向、膜系及热工程等多方面研究,获得了1.36 W的545 nm绿光输出,光–光转换效率为17.1%;输出功率为1.03 W时,半小时功率波动不超过1%。这是目前为止,Nd3+离子激光自倍频晶体的最好结果。文章最后介绍了激光自倍频晶体的可能应用。通过理论和实验分析,认为到目前为止Nd:GdCOB是以Nd3+为激活离子最后的激光自倍频晶体,而在Yb3+为激活离子时,Yb:YAB晶体最佳。     

Phase-matched second-harmonic generation in hybrid polymer-LN waveguides

Here we propose a hybrid polymer-LN waveguide for achieving phase-matched second-harmonic generation (SHG). From the aspect of super-mode theory, the geometric parameters of the hybrid semi-nonlinear waveguide were optimized to utilize both symmetric (even) and antisymmetric (odd) modes of the pump and SHG waves so as to facilitate phase matching with large modal overlap. Phase matching between a fundamental even (TE₀₀-like) mode at 1320 nm and a fundamental odd (TE₀₁-like) mode at 660 nm was found with a calculated modal overlap integral of 0.299, while utilizing the largest nonlinear coefficient d₃₃, and achieving an efficient calculated normalized conversion efficiency of 148% W^-1·cm^-2. Considering the fabrication feasibility of such hybrid waveguide with features including etchless, large dimension, and low structural sensitivity, we believe our findings would provide a useful reference for future on-chip efficient nonlinear conversion devices.     

各向异性晶体波导的倍频理论和实验研究

在波导耦合理论基础上，根据平面波导和通道波导的具体结构，分别推导了二种波导的倍频转换效率表达式，讨论了各种因素对倍频效率的影响，并采用离子法制备掺氧化镁铌酸锂和钽酸锂波导，测试和分析了它们的倍频性能，讨论了比较了平面和通道波道的特点。     

增益介质位置对腔外倍频效率的影响

采用MgO掺杂的周期性极化铌酸锂晶体作为非线性晶体,搭建了线性平-凹腔结构的外腔式倍频系统,分析了增益介质和输入耦合镜之间的距离对二次谐波转换效率的影响。实验中,使用光纤耦合二极管泵浦Nd: YVO₄激光器作为基频光源,通过改变增益介质和输入耦合镜的间距,测量了激光器的纵模数量、锁模脉冲稳定性、基频光线宽以及光-光转换效率。实验结果显示,增加增益介质和输入耦合镜之间的距离,可以在一定程度上提升自锁模脉冲的稳定性并有效减小基频光线宽。当泵浦功率较高时,适当增加该间距可以有效提升二次谐波转换效率。     

Gd3+/Y3+共掺对Nd:CaF2晶体光谱性能的影响

通过坩埚下降法生长了系列共掺Nd,Gd:CaF₂和Nd,Y:CaF₂晶体, 研究了Gd³⁺/Y³⁺共掺对Nd³⁺光谱性能以及Nd:CaF₂晶体晶胞参数的影响规律. 对于0.5 at.%Nd, x at.%Gd(x=2,5,8,10):CaF₂系列晶体, 当调控Gd³⁺掺杂浓度为2 at.%时, 具有最大的荧光寿命499 μs; 当Gd³⁺掺杂浓度为5 at.%时, 具有最大的吸收截面1.47×10^-20 cm², 最大的发射截面1.9×10^-20 cm²; 当Gd³⁺掺杂浓度为8 at.%时, 具有最佳的发射带宽29.03 nm. 对于0.6 at.%Nd, xat.%Y(x=2, 5, 8, 10):CaF₂系列晶体, Y³⁺掺杂浓度为5 at.%时, 有最大的吸收截面2.41×10^-20 cm², 最大的发射截面3.17×10^-20 cm²; 当Y³⁺掺杂浓度为10 at.%时, 具有最长的荧光寿命359.4 μs,并且具有最大发射带宽26 nm.     

Surface plasmon effects on surface second harmonic generation during Au nanoparticle deposition onto H–Si(1 1 1)

Deposition of Au nanoparticles from aqueous HF onto H–Si(1 1 1) was studied in situ by surface second harmonic generation (SHG) and ex situ by extinction spectroscopy and non-contact atomic force microscopy (AFM). AFM measurements indicate that the maximum SHG intensities occur at lateral particle diameters of approximately 90–100 nm independent of solution phase composition, but with an intensity that depends on solution phase composition.

Employing the evolution of SHG intensity to monitor lateral cluster growth, simultaneous Au deposition and Si oxidation exhibit apparent kinetic reaction orders of 1/2 and zero with respect to HF and Au(CN)₂⁻, respectively. These results are similar to those obtained purely from ex situ AFM analysis. The variations in SHG intensity with Au(CN)₂⁻ concentration can be related to particle nucleation densities. These results demonstrate the utility of SHG as an in situ probe of particle growth.     

环形光子晶体光纤中涡旋光的传输特性研究

由于涡旋光具有轨道角动量,将它应用于光纤通信领域可以有效提高信息传输速率.设计了一种环形光子晶体光纤,利用COMSOL Multiphysics软件对其涡旋光TE01,HE±21和TM01模式特性进行模拟计算,它们之间有效折射率差分别为4.59×10~(-4)和3.62×10~(-4);其中,TE01模式的涡旋光在入射光波长范围为1650—1950 nm时,色散值在44.18—45.83 ps·nm~(-1)·km~(-1)之间平坦;入射光波长在1550 nm时,TE01模式的涡旋光的非线性系数为1.37 W~(-1)·km~(-1).该结构的光子晶体光纤的涡旋光具有损耗小、色散平坦等特性,对光纤中传输涡旋光、将涡旋光应用于超连续谱等方面的研究具有重要意义.     

High-sensitive phototransistor based on vertical HfSe2/MoS2 heterostructure with broad-spectral response

Van der Waals heterostructures based on the two-dimensional (2D) semiconductor materials have attracted increasing attention due to their attractive properties. In this work, we demonstrate a high-sensitive back-gated phototransistor based on the vertical HfSe₂/MoS₂ heterostructure with a broad-spectral response from near-ultraviolet to near-infrared and an efficient gate tunability for photoresponse. Under bias, the phototransistor exhibits high responsivity of up to 1.42×10³ A/W, and ultrahigh specific detectivity of up to 1.39×10¹⁵ cm·Hz^1/2·W^-1. Moreover, it can also operate under zero bias with remarkable responsivity of 10.2 A/W, relatively high specific detectivity of 1.43×10¹⁴ cm·Hz^1/2·W^-1, ultralow dark current of 1.22 fA, and high on/off ratio of above 10⁵. These results should be attributed to the fact that the vertical HfSe₂/MoS₂ heterostructure not only improves the broadband photoresponse of the phototransistor but also greatly enhances its sensitivity. Therefore, the heterostructure provides a promising candidate for next generation high performance phototransistors.     

利用椭圆高斯光束产生266nm紫外连续激光

本文采用商用532 nm激光器作为基频光源,利用偏硼酸钡(β-BBO)晶体进行外腔倍频,实现了266 nm连续激光的高效输出.文中详细模拟了BBO晶体中的束腰形状对倍频效率的影响,仿真和实验结果均表明椭圆高斯光束可以有效改善走离效应,提高倍频转换效率.通过优化蝶形倍频腔,可以使椭圆高斯光束在腔内共振,当1 W基频光输入时可输出约180 mW的266 nm紫外连续激光,倍频转换效率达到18%.     

Growth and laser properties of Nd:Ca4YO(BO3)3 crystal

Nd:Ca₄YO(BO₃)₃ (Nd:YCOB) crystal was grown by the Czochralski method, and its structure was measured by using a four circle X-ray diffractometer. The transparent spectrum from 200 to 2600 nm was measured at room temperature. The fluorescence spectrum near 1.06 μm showed that the main emission wavelength of Nd:YCOB crystal was centered at 1060.8 nm. Laser output at 1.06 μm has been demonstrated when it was pumped by a Ti:sapphire laser at the wavelength of 794 nm, the highest output power was 68 mW under pumping power of 311 mW, the pumping threshold was 163 mW and slope efficiency was 46.9%. The self-frequency doubled green light has been observed when it was pumped by a Ti:sapphire or a laser diode (LD). A 14.5 mm Nd:YCOB crystal sample cut at (θ, φ)=(90°, 33°) was used for type I second-frequency generation (SHG) of the 1.06 μm laser pulse. The SHG conversion efficiency was 22%.     

Analysis of ion implanted waveguides formed on Nd:YVO4 crystals

This work reports, for the first time to our knowledge, the formation of planar waveguides in Nd:YVO₄ by either carbon or proton implantation. The waveguides are characterised using the dark mode method and by spectroscopic studies, indicating that there is a reduction of the refractive index at the end of the ion track. Particularly, carbon implantation generates a considerable variation in the guiding region. It is shown that the waveguiding structure preserves the spectroscopic properties of the Nd³⁺ ions, thus maintaining the crystal quality.