Tailoring edge and interface states in topological metastructures exhibiting the acoustic valley Hall effect

In this study, we investigate the acoustic topological insulator or topological metastructure, where an acoustic wave can exist only in an edge or interface state instead of propagating in bulk. Breaking the structural symmetry enables the opening of the Dirac cone in the band structure and the generation of a new band gap, wherein a topological edge or interface state emerges.Further, we systematically analyze two types of topological states that stem from the acoustic valley Hall effect mechanism;one type is confined to the boundary, whereas the other type can be observed at the interface between two topologically different structures. Results denote that the selection of different boundaries along with appropriately designed interfaces provides the acoustic waves in the band gap range with abilities of one-way propagation, dual-channel propagation, immunity from backscattering at sharp corners, and/or transition between propagation at interfaces and boundaries. Furthermore, we show that the acoustic wave propagation paths can be tailored in diverse and arbitrary ways by combing the two aforementioned types of topological states.     

AlN-Si(111)异质结构界面陷阱态研究

利用Al_AlN_Si(111) MIS结构电容_频率谱研究了金属有机化学气相沉积法生长的 Si 基AlN的AlN_Si异质结构中的电荷陷阱态. 揭示了AlN_Si异质结构界面电荷陷阱态以及A lN层中的分立陷阱中心. 结果指出：AlN层中存在E_t-E_v=2.55eV的分立陷阱中心；AlN_Si界面陷阱态在Si能隙范围内呈连续分布，带中央态密度最低，N_ss为8×10^11eＶ^-1cm^-2，对应的时间常数τ为8×10^-4s ，俘获截面σn为1.58×10^-14cm^2；在AlN界面层存在三种陷阱 态，导致Al_AlN_Si异质结构积累区电容的频散. 关键词： 界面陷阱态 AlN-Si 电容-频率谱     

Analysis of the tetraquark and hexaquark molecular states with the QCD sum rules

In this article, we construct the color-singlet-color-singlet type currents and the color-singlet-colorsinglet-color-singlet type currents to study the scalar D*■*, D*D* tetraquark molecular states and the vector D*D*■*, D*D*D* hexaquark molecular states with the QCD sum rules in details. In calculations, we choose the pertinent energy scales of the QCD spectral densities with the energy scale formula ■for the tetraquark and hexaquark molecular states respectively in a consistent way. We obtain stable QCD sum rules for the scalar D*■*, D*D*tetraquark molecular states and the vector D*D*■* hexaquark molecular state, but cannot obtain stable QCD sum rules for the vector D*D*D* hexaquark molecular state. The connected(nonfactorizable)Feynman diagrams at the tree level(or the lowest order) and their induced diagrams via substituting the quark lines make positive contributions for the scalar D*D* tetraquark molecular state, but make negative or destructive contributions for the vector D*D*D* hexaquark molecular state. It is of no use or meaningless to distinguish the factorizable and nonfactorizable properties of the Feynman diagrams in the color space in the operator product expansion so as to interpret them in terms of the hadronic observables, we can only obtain information about the short-distance and long-distance contributions.     

Anomalous density of states in hybrid normal metal-superconductor bilayers

In contact with a superconductor, the Andreev reflection of the electrons locally modifies the N metal electronic properties, including the local density of states (LDOS). We investigated the LDOS in superconductor-normal metal (Nb-Au) bilayers using a very low temperature (60 mK) STM on the normal metal side. High resolution tunneling spectra measured on the Au surface show a clear proximity effect with an energy gap of reduced amplitude compared to the bulk Nb gap. The dependence of this mini-gap width with the normal metal thickness is discussed in terms of the Thouless energy. Within the mini-gap, the density of states does not reach zero and shows clear sub-gap features. We compare the experimental spectra with the well-established quasi-classical theory.     

The arbitrary l continuum states of the hyperbolic molecular potential

Within the framework of partial-wave method, we study in this Letter the arbitrary l continuum states of the Schrödinger equation with the hyperbolic molecular potential in terms of an improved approximation to the centrifugal term. We present the normalized radial wave functions and obtain analytical formula of phase shifts. In addition, the corresponding bound states are also discussed by studying the analytical properties of the scattering amplitude. We calculate the energy spectra and scattering phase shifts by the improved, previous approximations and the accurate methods, respectively and find that the improved approximation is better than the previous one since the present results are in better agreement with the accurate ones.     

Selective Andreev reflection tuned by magnetic barriers in graphene-superconductor hybrid junctions

We investigate the direction-dependent Andreev reflection of normal state-superconductor junctions both in monolayer and bilayer graphene with a single magnetic barrier by means of the Green?s function formalism. Such a barrier is capable of tuning the preferred angles of incidence for the Andreev retro-reflection. It enhances the specular reflection probability for certain angles of incidence in bilayer-based hybrid structures. We further study the impacts of magnetic barriers on the monolayer and bilayer hybrid structures by calculating the differential conductances within the Blonder–Tinkham–Klapwijk formula for experimental comparisons.     

Dual-channel tunable near-infrared absorption enhancement with graphene induced by coupled modes of topological interface states

The dual-channel nearly perfect absorption is realized by the coupled modes of topological interface states (TIS) in the near-infrared range. An all-dielectric layered heterostructure composed of photonic crystals (PhC)/graphene/PhC/graphene/PhC on GaAs substrate is proposed to excite the TIS at the interface of adjacent PhC with opposite topological properties. Based on finite element method (FEM) and transfer matrix method (TMM), the dual-channel absorption can be modulated by the periodic number of middle PhC, Fermi level of graphene, and angle of incident light (TE and TM polarizations). Especially, by fine-tuning the Fermi level of graphene around 0.4 eV, the absorption of both channels can be switched rapidly and synchronously. This design is hopefully integrated into silicon-based chips to control light.     

Analysis of hidden-charm pentaquark molecular states with and without strangeness via the QCD sum rules

In this study, we investigate the \begin{document}$\bar{D}\Sigma_c$\end{document}, \begin{document}$\bar{D}\Xi^\prime_c$\end{document}, \begin{document}$\bar{D}\Sigma_c^*$\end{document}, \begin{document}$\bar{D}\Xi_c^*$\end{document}, \begin{document}$\bar{D}^{*}\Sigma_c$\end{document}, \begin{document}$\bar{D}^{*}\Xi^\prime_c$\end{document}, \begin{document}$\bar{D}^{*}\Sigma_c^*$\end{document}, and \begin{document}$\bar{D}^{*}\Xi_c^*$\end{document} pentaquark molecular states with and without strangeness via the QCD sum rules in detail, focusing on the light flavor, \begin{document}$SU(3)$\end{document} , breaking effects, and make predictions for new pentaquark molecular states besides assigning \begin{document}$P_c(4312)$\end{document}, \begin{document}$P_c(4380)$\end{document}, \begin{document}$P_c(4440)$\end{document}, \begin{document}$P_c(4457)$\end{document} , and \begin{document}$P_{cs}(4459)$\end{document} self-consistently. In the future, we can search for these pentaquark molecular states in the decay of \begin{document}$\Lambda_b^0$\end{document}, \begin{document}$\Xi_b^0$\end{document} , and \begin{document}$\Xi_b^-$\end{document} . Furthermore, we discuss high-dimensional vacuum condensates in detail.     

Gradient-augmented hybrid interface capturing method for incompressible two-phase flow

Motivated by inconveniences of present hybrid methods,a gradient-augmented hybrid interface capturing method(GAHM) is presented for incompressible two-phase flow.A front tracking method(FTM) is used as the skeleton of the GAHM for low mass loss and resources.Smooth eulerian level set values are calculated from the FTM interface,and are used for a local interface reconstruction.The reconstruction avoids marker particle redistribution and enables an automatic treatment of interfacial topology change.The cubic Hermit interpolation is employed in all steps of the GAHM to capture subgrid structures within a single spacial cell.The performance of the GAHM is carefully evaluated in a benchmark test.Results show significant improvements of mass loss,clear subgrid structures,highly accurate derivatives(normals and curvatures) and low cost.The GAHM is further coupled with an incompressible multiphase flow solver,Super CE/SE,for more complex and practical applications.The updated solver is evaluated through comparison with an early droplet research.     

Mass spectra of meson molecular states for heavy and light sectors

We obtain mass spectra of the light and heavy meson-antimeson(molecular states) sectors by using a nonrelativistic potential model with Coulomb and one pion exchange potential terms for meson-meson interaction.The digamma decay widths are also obtained for the light sector.We compare our results with available experimental and theoretical data.     

A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon

Degrading the recombination activities of grain boundaries (GBs) is essential to improve the efficiency of multi‐crystalline silicon (mc‐Si) based solar cells. We apply the deep level transient spectroscopy technique to detect interface states at Σ3 and Σ9 GBs in mc‐Si. The density of interface states close to midgap is found comparable for both as‐grown GBs. Gettering or hydrogenation leads to shallower states with a smaller capture cross section and lower density. Recombination activity reduction for Σ3 GBs is stronger than for Σ9 GBs especially after hydrogenation. Both the analysis approach and experimental results could be applied for a specific GB engineering of mc‐Si based solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Magnetic-field dependence of hydrogenic impurity states in a quantum well wire

Summary The binding energy for on-centre impurities in a rectangular quantum well wire is calculated as a function of the width of the wire and perpendicular magnetic field. The results for zero-magnetic-field case are in perfect agreement with previous calculations. The authors of this paper have agreed to not receive the proofs for correction.     

Low voltage substrate current： a monitor for interface states generation in ultra-thin oxide n-MOSFETs under constant voltage stresses

The low voltage substrate current （Ib） has been studied based on generation kinetics and used as a monitor of interface states （Nit） generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ib is formed by electrons tunnelling through interface states, and the variations of Ib（△Ib） are proportional to variations of Nit （△Nit）. The Nit energy distributions were determined by differentiating Nit（Vg）. The results have been compared with that measured by using gate diode technique.[第一段]     

Interfacial density of states in magnetic tunnel junctions

Large zero-bias resistance anomalies as well as a collapse of magnetoresistance were observed in Co/Al2O3/Co magnetic tunnel junctions with thin Cr interfacial layers. The tunnel magnetoresistance decays exponentially with nominal Cr interlayer thickness with a length scale of approximately 1 A more than twice as fast as for Cu interlayers. The strong suppression of magnetoresistance, as well as the zero-bias anomalies, can be understood by considering a strong spin-dependent modification of the density of states at Co/Cr interfaces. The role of the interfacial density of states is shown by the use of specially engineered structures. Similar effects are predicted and observed in junctions with Ru interfacial layers.     

Near-field characteristics of highly non-paraxial subwavelength optical fields with hybrid states of polarization

The vectorial structure of an optical field with hybrid states of polarization(So P) in the near-field is studied by using the angular spectrum method of an electromagnetic beam. Physical images of the longitudinal components of evanescent waves are illustrated and compared with those of the transverse components from the vectorial structure. Our results indicate that the relative weight integrated over the transverse plane of the evanescent wave depends strongly on the number of the polarization topological charges. The shapes of the intensity profiles of the longitudinal components are different from those of the transverse components, and it can be manipulated by changing the initial So P of the field cross-section. The longitudinal component of evanescent wave dominates the near-field region. In addition, it also leads to three-dimensional shape variations of the optical field and the optical spin angular momentum flux density distributions.     

利用分子动力学方法铁素体-渗碳体相界面效应探究

珠光体是十分重要的组织结构,因此本文构建了含铁素体-渗碳体相界面的模型,并采用分子动力学模拟方法模拟纳米压入的过程。通过对模拟结果的力学性能和组织结构分析,探究了铁素体-渗碳体相界面效应。研究发现,距铁素体-渗碳体晶界不同距离（位置压入）,在压入最初阶段,压头载荷随着压头与晶界距离的增大而增大,当压入深度达到一定深度后,载荷随着距离的增大而减小。杨氏模量和最大剪切模量受压头尖端下方原子结构的直接影响,硬度受到结构完整性和类型的共同影响。铁素体-渗碳体相界面影响了纳米压入过程中位错形核、增殖和扩展,宏观表现为在相同压入深度下,不同压入位置压头载荷的差异。     

Two interface effects: Exchange bias and magnetic proximity

Exchange bias and magnetic proximity effects are two novel phenomena that are in the limelight because of their fundamental and technological importance. Since both phenomena are interfacial in origin, we review these together. In the first part of this review, we have discussed the basics of these two phenomena. Subsequently, we have described numerous experimental examples involving a variety of composite magnetic materials and heterostructures. The recent theoretical models of these two interface phenomena have also been described. Finally, we have shed light on an obvious question: can one expect both these phenomena to occur together in any magnetically coupled system? We conclude that one can enhance the operating temperature of an exchange biased device by exploiting the magnetic proximity effect.     

尾流效应对快速双原子分子离子在固体中电荷态及分子轴取向的影响

研究了快速双原子分子离子在固体中穿行时,尾流效应对各离子电荷态以及库仑爆炸过程的影响.借助于线性介电响应理论和局域介电函数,离子之间的动力学相互作用势可以表示成对称的屏蔽库仑势和非对称的尾势.通过对分子离子上所有束缚电子的总能量进行变分和求解单个离子的运动方程,自洽地确定出分子离子中每个离子的电荷态.数值结果表明,由于尾流效应的影响,在初始穿行阶段,分子离子中导航离子的电荷数随穿行深度的增加而单调递增,而尾随离子的电荷数则随穿行深度的增加而振荡.但当穿行深度很大时,两个离子的电荷数都趋于具有相同速度的孤立离子的电荷数.此外,还发现分子轴的取向朝入射速度方向偏转     

Influence of interface within the composite barrier on the tunneling electroresistance of ferroelectric tunnel junctions with symmetric electrodes

The interface with a pinned dipole within the composite barrier in a ferroelectric tunnel junction（FTJ） with symmetric electrodes is investigated.Different from the detrimental effect of the interface between the electrode and barrier in previous studies,the existence of an interface between the dielectric SrTiO₃ slab and ferroelectric BaTiO₃ slab in FTJs will enhance the tunneling electroresistance（TER） effect.Specifically,the interface with a lower dielectric constant and larger polarization pointing to the ferroelectric slab favors the increase of TER ratio.Therefore,interface control of high performance FTJ can be achieved.     

Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser

Stimulated photoluminescence （PL） emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emission, which can be demonstrated by its threshold behaviour and linear transition of emission intensity as a function of pump power. The oxide structure is formed by laser irradiation on silicon and its annealing treatment. A model for explaining the stimulated emission is proposed, in which the trap states of the interface between an oxide of silicon and porous nanocrystal play an important role.