Energy dependence of electron mobility in metallic nanowires

We study the electron drift mobility in a metallic nanowire (at low temperature) as a function of both electron energy and electrochemical potential from considerations relative to energy-dependent conductance and carrier spatial density. In fact, a mathematical expression for the electron mobility, when electronic energy equals Fermi energy (resonant states), valid for negative values of the electrochemical potential is derived.     

The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures

To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas （2DEG） in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer.     

Disorder-induced enhancement of conductance in doped nanowires

A new mechanism is proposed to explain the enhancement of conductance in doped nanowires.It is shown that the anomalous enhancement of conductance is due to surface doping.The conductance in doped nanowires increases with dopant concentration,which is qualitatively consistent with the existing experimental results.In addition,the I-V curves are linear and thus suggest that the metal electrodes make ohmic contacts to the shell-doped nanowires.The electric current increases with wire diameter (D) and decreases exponentially with wire length (L).Therefore,the doped nanowires have potential application in nanoscale electronic and optoelectronic devices.     

碳化硅纳米线的电子发射特性

以聚碳硅烷为原料,通过1 200 ℃高温裂解工艺制备了碳化硅纳米线,并采用碳化硅纳米线作为高功率微波源用阴极材料,进行了电子发射实验。结果表明：与天鹅绒阴极材料相比,碳化硅纳米线具有更高的电子发射电流密度,在115 kV外加激励脉冲高压下,电子发射密度为23.7 kA/cm2,而天鹅绒材料为14.0 kA/cm2,并具有更好的电子发射品质及更长的使用寿命。因此碳化硅纳米线作为高功率微波源用阴极,具有很好的应用潜力。     

Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I_{D max} and the maximum transconductance g_{m max} of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V_T and g_{m max} of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric.     

AlGaN/GaN高电子迁移率晶体管肖特基高温退火机理研究

在不同应力条件下,研究了AlGaN/GaN高电子迁移率晶体管高温退火前后的电流崩塌、栅泄漏电流以及击穿电压的变化.结果表明,AlGaN/GaN高电子迁移率晶体管通过肖特基高温退火以后,器件的特性得到很大的改善.利用电镜扫描(SEM)和X射线光电子能谱(XPS)对高温退火前、后的肖特基接触界面进行深入分析,发现器件经过高温退火后,Ni和AlGaN层之间介质的去除,并且AlGaN材料表面附近的陷阱减少,使得肖特基有效势垒提高,从而提高器件的电学特性. 关键词： AlGaN/GaN高电子迁移率晶体管 肖特基接触 界面陷阱     

A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates

A novel enhancement-mode AlGaN/GaN high electron mobility transistor(HEMT) is proposed and studied.Specifically,several split floating gates(FGs) with negative charges are inserted to the conventional MIS structure.The simulation results revealed that the V_(th) decreases with the increase of polarization sheet charge density and the tunnel dielectric(between FGs and AlGaN) thickness,while it increases with the increase of FGs sheet charge density and blocking dielectric(between FGs and control gate) thickness.In the case of the same gate length,the V_(th) will left shift with decreasing FG length.More interestingly,the split FGs could significantly reduce the device failure probability in comparison with the single large area FG structure.     

氧化锌纳米线的紫外光耦合增强场电子发射特性

本文采用热化学气相沉积方法制备氧化锌纳米线阵列, 研究氧化锌纳米线阵列在紫外光辐照下的场电子发射特性. 实验结果表明, 在紫外光辐照下, 氧化锌纳米线场发射开启电压降低, 发射电流明显增大. 机理分析认为, 氧化锌纳米线紫外光增强的场发射源自场电子发射与半导体耦合作用, 紫外光激发价带电子跃迁到导带和缺陷能级使发射电子数量增加, 同时, 光生电子发射降低了发射材料表面的有效功函数, 从而显著增强场电子发射性能. 氧化锌纳米线具有紫外光耦合增强场电子发射特性, 在光传感、冷阴极平板显示和场发射电子源等方面具有潜在的应用价值.     

Anisotropic electron mobility in fluorene-PPV and fluorene-MEH-PPV

Polyfluorene copolymers are attractive semiconductor materials, in particular for applications in the organic electronics field. They are versatile to be chemically modified and allow a tuning of the emission to cover the entire visible spectrum. A better understanding of the fundamental aspects of the nature of electronic structure and charge transport properties contribute to the improvement of optoelectronic properties of polymeric materials. Here, we provide a structure–property relationship for models of fluorene-PPV and fluorene-MEH-PPV copolymers, using molecular quantum mechanics modelling. The anisotropy is discussed revisiting Mulliken's transition moment theory. Accordingly, our results show that electron mobility occurs preferentially intrachain for both copolymers. Moreover, the interchain electron mobility has the most propensity to occur via π-stacking interactions.     

InN纳米线的低压化学气相沉积及其场发射特性研究

利用低压化学气相沉积方法在以Au作催化剂的Si衬底上生长了InN纳米线. 扫描电子显微镜分析表明，这些纳米线的直径在60—100 nm的范围内, 而其长度大于1 μm.高分辨透射电子显微镜图像表明，合成的纳米线中含有六方相和立方相的InN晶体.这些InN纳米线具有良好的场发射特性和稳定的场发射电流，其开启场为10.02 V/μm(电流密度为10 μA/cm²)，在24 V/μm 的电场下，其电流密度达到5.5 mA/cm².此外，对InN纳米线的场发射机理也进行了讨论. 关键词： InN纳米线 场电子发射 非线性Fower-Nordheim曲线     

Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas(2DEG)in AlGaN/GaN high electron mobility transistors(HEMTs).By introducing a drifted Fermi–Dirac distribution,we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation.Then,the nonequilibrium Fermi–Dirac function is obtained by applying the calculated electron drift velocity and electron temperature.Under random phase approximation(RPA),the electric field driven plasmon dispersion is investigated.The calculated results indicate that the plasmon frequency is dominated by both the electric field and the angle between wavevector and electric field.Importantly,the plasmon frequency could be tuned by the applied source–drain bias voltage besides the gate voltage(change of the electron density).     

Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors

This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN/GaN high electron mobility transistors(HEMTs) submitted to off-state stress. The threshold voltage shows a positive shift in the early stress, then turns to a negative shift. The negative shift of the threshold voltage seems to have a long recovery time. A model related with the balance of electron trapping and detrapping induced by shallow donors and deep acceptors is proposed to explain this degradation mode.     

高功率微波作用下高电子迁移率晶体管的损伤机理

本文针对高电子迁移率晶体管在高功率微波注入条件下的损伤过程和机理进行了研究,借助SentaurusTCAD仿真软件建立了晶体管的二维电热模型,并仿真了高功率微波注入下的器件响应.探索了器件内部电流密度、电场强度、温度分布以及端电流随微波作用时间的变化规律.研究结果表明,当幅值为20 V,频率为14.9 GHz的微波信号由栅极注入后,器件正半周电流密度远大于负半周电流密度,而负半周电场强度高于正半周电场.在强电场和大电流的共同作用下,器件内部的升温过程同时发生在信号的正、负半周内.又因栅极下靠近源极侧既是电场最强处,也是电流最密集之处,使得温度峰值出现在该处.最后,对微波信号损伤的高电子迁移率晶体管进行表面形貌失效分析,表明仿真与实验结果符合良好.     

AlGaN/GaN高电子迁移率晶体管温度传感器特性

本文制作了基于无栅AlGaN/GaN高电子迁移率晶体管结构的温度传感器,并对其温度相关的电学特性进行了表征.实验测试了器件从50℃到400℃的变温电流-电压特性,研究了器件灵敏度随着器件沟道长宽比的变化,并研究了在300—500℃高温的空气和氮气中经过1 h恒温加热后器件的电学特性变化.理论与实验研究结果表明,随着器件沟道长宽比的增大,器件的灵敏度会随之上升;在固定电流0.01 A下,器件电压随温度变化的平均灵敏度为44.5 mV/℃.同时,稳定性实验显示器件具有较好的高温保持稳定性.     

Influence of a two-dimensional electron gas on current—voltage characteristics of Al0.3{Ga}0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.     

高电子迁移率晶格匹配InAlN/GaN材料研究

文章基于蓝宝石衬底采用脉冲金属有机物化学气相淀积(MOCVD)法生长的高迁移率InAlN/GaN材料,其霍尔迁移率在室温和77 K下分别达到949和2032 cm²/Vs,材料中形成了二维电子气(2DEG). 进一步引入1.2 nm的AlN界面插入层形成InAlN/AlN/GaN结构,则霍尔迁移率在室温和77 K下分别上升到1437和5308 cm²/Vs. 分析样品的X射线衍射、原子力显微镜测试结果以及脉冲MOCVD生长方法的特点,发现InAlN/GaN材料的结晶质量较高,与GaN晶格匹配的InAlN材料具有平滑的表面和界面. InAlN/GaN和InAlN/AlN/GaN材料形成高迁移率特性的主要原因归结为形成了密度相对较低(1.6×10¹³-1.8×10¹³ cm^-2)的2DEG,高质量的InAlN晶体降低了组分不均匀分布引起的合金无序散射,以及2DEG所在界面的粗糙度较小,削弱了界面粗糙度散射. 关键词： InAlN/GaN 脉冲金属有机物化学气相淀积 二维电子气 迁移率     

Feedback stabilization of drift cyclotron loss cone instability by modulated electron sources

It is shown that the drift cyclotron loss cone instability can be suppressed by modulating electron density within the plasma. With the feedback in +90° phase the critical density gradient needed for the onset of the drift cyclotron loss cone instability increases approximately linearly with the gain. Typically with the gain of −50Ω _i the critical density gradient can be pushed up by as much as two orders of magnitude and minimum mirror plasma radius can be brought down in the same proportion.     

X-ray and electron spectroscopy investigation of the core-shell nanowires of ZnO:Mn

ZnO/ZnO:Mn core-shell nanowires were studied by means of X-ray absorption spectroscopy of the Mn K- and L_2,3-edges and electron energy loss spectroscopy of the O K-edge. The combination of conventional X-ray and nanofocused electron spectroscopies together with advanced theoretical analysis turned out to be fruitful for the clear identification of the Mn phase in the volume of the core-shell structures. Theoretical simulations of spectra, performed using the full-potential linear augmented plane wave approach, confirm that the shell of the nanowires, grown by the pulsed laser deposition method, is a real dilute magnetic semiconductor with Mn²⁺ atoms at the Zn sites, while the core is pure ZnO.     

3d过渡金属Co掺杂核壳结构硅纳米线的第一性原理研究

基于密度泛函理论的第一性原理计算,研究了横截面为五边形和六边形的核壳结构硅纳米线的过渡金属Co原子替代掺杂.通过比较形成能发现,核心位置掺杂、壳层单链掺杂以及外壳层全替代掺杂的硅纳米线都具有稳定性,其中核心位置掺杂结构的稳定性最高.掺杂体系均呈现金属性,随着掺杂浓度的增加,电导通道数增加.Co原子掺杂的硅纳米线呈现铁磁性,具有磁矩.Bader电荷分析表明,电荷从Si原子转移至过渡金属Co原子.与自由态时过渡金属Co原子的磁矩相比,体系中Co原子的磁矩有所降低,这主要是由Co原子4s轨道向3d/4p轨道的电荷转移以及4s,3d,4p的上自旋电子转移至下自旋导致的.     

Pulsed laser induced absorption (one–four) dependence of electron mobility in CdI2 and ZnS crystals

The photoconductivity and electron mobility of CdI₂ and ZnS crystals have been studied using N₂-laser, fundamental and frequency doubled Nd:YAG laser. Low values of the electron mobilities obtained in the present case have been attributed to laser-induced-absorption. It is low in one photon excitation and increases with the order of absorption.