The mechanical properties of ZnO microwires have been studied using three different methods: quasi-static flexural measurements using atomic force microscopy, static measurements using a nano indenter, and dynamic flexural measurements using optical interferometry. ZnO microwires were synthesized by chemical vapor deposition method, and the crystal structure and quality were examined using x-ray diffraction and photoluminescence spectroscopy. The Young's moduli were estimated using the measurement results from the three methods, and they showed consistent values in the range 67.5–79.4 GPa for microwires with diameters of 1.8 μm ± 100 nm. 相似文献
The slower response speed is the main problem in the application of ZnO quantum dots (QDs) photodetector, which has been commonly attributed to the presence of excess oxygen vacancy defects and oxygen adsorption/desorption processes. However, the detailed mechanism is still not very clear. Herein, the properties of ZnO QDs and their photodetectors with different amounts of oxygen vacancy (VO) defects controlled by hydrogen peroxide (H2O2) solution treatment have been investigated. After H2O2 solution treatment, VO concentration of ZnO QDs decreased. The H2O2 solution-treated device has a higher photocurrent and a lower dark current. Meanwhile, with the increase in VO concentration of ZnO QDs, the response speed of the device has been improved due to the increase of oxygen adsorption/desorption rate. More interestingly, the response speed of the device became less sensitive to temperature and oxygen concentration with the increase of VO defects. The findings in this work clarify that the surface VO defects of ZnO QDs could enhance the photoresponse speed, which is helpful for sensor designing. 相似文献
A high‐performance UV photodetector (PD) based on a p‐Se/n‐ZnO hybrid structure with large area (more than 1×1 cm) is presented in this study. The device is theoretically equivalent to a parallel‐connection circuit for its special structure and shows multifunction at different voltage bias, which means the output signal can be tailored by an applied voltage. The Se/ZnO PD shows binary response (positive and negative current output under on/off periodical light illumination) under small reverse bias (–0.05 V and –0.1 V) which efficiently reduces the negative effect of noise signal in weak‐signal detection applications. At zero bias, with the aid of a p‐n heterojunction, a high on/off ratio of nearly 104 is achieved by this device at zero set bias under 370 nm (∼0.85 mW cm−2) illumination and this on/off ratio can be achieved in 0.5 s. The device also shows a fast speed with rise time of 0.69 ms and decay time of 13.5 ms measured by a pulse laser, much faster than that of a pure ZnO film. The Se/ZnO PD in this research provides a new pathway to fabricate multifunctional high‐speed, high signal‐to‐noise ratio, high detectivity and high selectivity UV photodetectors.
In this paper, a novel structure for quantum ring inter-subband photodetectors (QRIP) is proposed to reduce its dark current. Some additional layers including asymmetric multi-barrier resonant tunneling (AMBRT) in absorption region layers are exploited to provide near unity tunneling probability for generated photocurrents and completely reject thermally generated electrons. AMBRT structure consists of three asymmetric AlGaAs barriers and two InGaAs wells which are designed for operation wavelength of generated photocurrents by absorption of 20 μm. Simulation results show that AMBRT can considerably reduce the dark current compared to previously proposed resonant tunneling structure about three orders of magnitude. As a consequent, higher specific detectivity for AMBRT-QRIP is obtained in the order of ∼1011 cm Hz1/2/W at 100 K. 相似文献
Zinc oxide (ZnO) with 2D hexagonal structure was successfully prepared using electrochemical deposition (ECD) method on a quartz substrate pre-coated with indium-doped ZnO layer. The X-ray diffraction of the prepared sample confirmed that the hexagonal structure had a dominant c-axis orientation. The scanning electron microscopy revealed the 2D hexagonal structure of the prepared ZnO. 相似文献
An ultraviolet (UV) photodetector based on ZnO-reduced graphene oxide (ZnO-rGO) composites have been successfully fabricated. A pure ZnO photodetector was also fabricated by similar method. In comparison with the pure ZnO UV photodetector, the ZnO-rGO photodetector exhibits a much larger photocurrent and a better light-to-dark-current-ratio. The mechanism of photocurrent enhancement was investigated using I-V characteristics, photoluminescence (PL) spectra, transmittance spectra and time-dependent photocurrent analysis. Results show that the photocurrent enhancement of the ultraviolet photodetector is due to the improvement of the carrier lifetime, because the carrier recombination of ZnO were reduced by rGO. It provides a potential way to fabricate high-response UV photodetectors. 相似文献
We report on the substantial persistent photoconductivity (PPC) response exhibited by the zinc oxide (ZnO) nanorod-based ultraviolet (UV) photodetection system. An increase in photocurrent and, hence, rise in PPC was observed for larger UV exposure times at regular intervals. Triggered by quantum efficiency, the increment in sustained conduction band electrons is proposed as the main reason behind the increased photocurrent response. In contrast, the trap centers located below the conduction band are expected to slow down the recombination rate, which accounts for the rise in PPC. The lowering of PPC upon annealing suggests the surface dependent nature of the PPC. The growth and decay mechanism of PPC has a direct relevance while assessing figure of merit of prototype nanostructure-based optical sensor and UV photodetectors. 相似文献
In this study, ZnO nanorods (NRs) and nanocombs (NCs) are synthesized by simple galvanostatic electrochemical deposition technique, without prepared any ZnO seed-layer or catalyst. The effect of the different morphologies on the UV sensing characteristics has been studied under ambient conditions. The photoluminescence (PL) spectra and time-dependent photoresponse of the ZnO nanostructures exhibited good optical properties. At room temperature, NCs showed superior response with 9% change of its resistance, few seconds response time and fully recovery. Inversely, in high temperature ZnO NRs indicated better response than NCs with the variation of 25% of its resistance. The dependence photoresponse on temperature demonstrated clearly how surface-defects affect on UV response of ZnO nanostructures. Our approach is to provide a simple and cost-effective way to fabricate UV detectors. 相似文献
This paper presents a review of models of the current transport in different kind of heterojunctions (HJs) and their characteristics. In order to effectively deduce the dominant electron transport for the HJs based on ZnO or Zn1?xMgxO layers grown on Si substrate by MBE a comparison is performed – which type of the HJ exhibits better electrical properties. The current–voltage characteristics for the studied HJs were measured within 280–300 K. The transport properties of the HJs are explained in terms of Anderson model with reference to aforementioned current transport models. It is found, that the mechanisms of current transport for all of the studied HJs are similar. At a low forward voltage bias the tunneling current dominates while at medium voltage bias (0.5–1 V) multitunneling capture-emission prevails with the electron trap located at 0.1–0.25 eV below the bottom of a ZnO (Zn1?xMgxO) conduction band. Beyond this voltage bias space charge limited current governs the current transport. 相似文献
Ultrasound assisted wet-chemical method has been carried out to incorporate different metal and non-metal ions such as; Li, S and Ag into ZnO. Characteristic studies on the structural and optical properties of the samples especially; the ultra-violet (UV) light absorption have been carried out. X-ray diffraction (XRD) analysis shows the formation of hexagonal crystal structure of ZnO along with changes in crystallinity and micro-strain with impurity doping. The morphology of the doped samples changes from particle like structure to flower and rod like structures showing the influence of dopant ions on nano ZnO growth. Infra-red (IR) transmittance spectra give information about the presence of metal–oxygen bond along with other stretching and bending modes. UV–visible absorption studies show the narrowing and sharpening of UV absorption band along with a blue shift for the doped samples. This shows the intensification in the excitonic absorption in ZnO after doping specific elements which will find application in UV blocking agents. Photoluminescence (PL) measurement shows the presence of excitonic emission and emissions due to intrinsic defects and external impurities in UV and visible regions respectively. These emission bands show a change in their position and intensity which has been explained on the basis of the existence of impurity levels in the band gap of ZnO. 相似文献
ZnO was coated homogeneously with amorphous Ni film by an electroless plating process. After electroless Ni plating, transmission electron microscope (TEM) images and energy dispersive spectrometry spectra (EDS) of ZnO clearly indicated that Ni was coated on the surface of ZnO, the coatings and ZnO contacted enough. X-ray diffraction and high-resolution TEM showed that the Ni film on ZnO was amorphous. Electrochemical performance of Ni-coated ZnO was investigated by the galvanostatic charge/discharge cycling test. Compared to that of uncoated ZnO, the charging–discharging performance of Ni-coated ZnO was obviously improved, e.g. the average discharge capacity of the Ni-coated ZnO increased 71.5% at the stage of stable cycling test. 相似文献
The electrical and optical properties of the ZnO layers and of the ITO/ZnO bilayers are investigated. We show that a ZnO layer of about 120 nm is the best compromise to obtain simultaneously a high transmittance and conductivity. Moreover an X-ray diffraction analysis underscores that an amorphous ITO deposited on a polycrystalline ZnO could change into a polycrystalline ITO. The modifications of the ITO layer by a preliminary deposition of a 120 nm thick ZnO underlayer enables us to decrease the threshold voltage of organic light emitting diodes. 相似文献
A new coating system of under layer for hot dip zinc coating was explored as an effective coating for steel especially for application in relatively high aggressive environments. The influence of different barrier layers formed prior to hot dip galvanization was investigated to optimize high performance protective galvanic coatings. The deposition of ZnO and Ni-P inner layers and characteristics of hotdip zinc coatings were explored in this study. The coating morphology was characterized by scanning electron microscope (SEM) analysis. The hot dip zinc coatings containing under layer showed substantial improvement in their properties such as good adhesion, and high hardness. In addition, a decrease in the thickness of the coating layer and an enhancement of the corrosion resistance were found. Open circuit potential (OCP) of different galvanized layers in different corrosive media viz. 5% NaCl and 0.5 M H2SO4 solutions at 25 ± 1 °C was measured as a function of time. A nobler OCP was exhibited for samples treated with ZnO and Ni than sample of pure Zn; this indicates a dissolution process followed by passivation due to the surface oxide formation. The high negative OCP can be attributed to the better alloying reaction between Zn and Fe and to the sacrificial nature of the top pure zinc layer. 相似文献
Employing a simple and efficient method of electro-chemical anodization,ZnO nanowire films are fabricated on Zn foil,and an ultraviolet(UV)sensor prototype is formed for investigating the electronic transport through back-to-back double junctions.The UV(365 nm)responses of surface-contacted ZnO film are provided by I–V measurement,along with the current evolution process by on/off of UV illumination.In this paper,the back-to-back metal–seconductor–metal(M–S–M)model is used to explain the electronic transport of a ZnO nanowire film based structure.A thermionic-field electron emission mechanism is employed to fit and explain the as-observed UV sensitive electronic transport properties of ZnO film with surface-modulation by oxygen and water molecular coverage. 相似文献