LiGaX2(X=S,Se, Te)的电子结构,光学和弹性性质的第一性原理计算

采用基于第一性原理的密度泛函理论赝势平面波方法,对LiGaX₂(X=S, Se, Te)的能带结构、态密度、光学以及弹性性质进行了理论计算. 能带结构计算表明LiGaS₂ 的禁带宽度为4.146 eV, LiGaSe₂ 的禁带宽度为3.301 eV, LiGaTe₂ 的禁带宽度为2.306 eV; 其价带主要由Ga-4p 层电子和X- np 层电子的能态密度决定; 同时也对LiGaX< 关键词： 电子结构 光学性质 弹性性质 LGX     

Electronic and magnetic properties of single-layer and double-layer VX_2(X=Cl,Br) under biaxial stress

First-principles calculations and Monte Carlo simulations reveal that single-layer and double-layer VX_2(X = Cl, Br)can be tuned from antiferromagnetic(AFM) semiconductors to ferromagnetic(FM) state when biaxial tensile stress is applied. Their ground states are all T phase. The biaxial tensile stress at the phase transition point of the double-layer VX_2 is larger than that of the single-layer VX_2. The direct band gaps can be also manipulated by biaxial tensile stress as they increases with increasing tensile stress to a critical point and then decreases. The Néel temperature(TN) of double-layer VX_2 are higher than that of single-layer. As the stress increases, the TNof all materials tend to increase. The magnetic moment increases with the increase of biaxial tensile stress, and which become insensitive to stress after the phase transition points.Our research provides a method to control the electronic and magnetic properties of VX_2 by stress, and the single-layer and double-layer VX_2 may have potential applications in nano spintronic devices.     

Electronic,optical, and mechanical properties of BN,AlN, and InN with zinc-blende structure under pressure

In this work, the electronic, optical, and mechanical properties of BN, AlN, and InN under the action of pressure are calculated. For each of these compounds, the energy band structure, band gaps(E~L_g, E~Γ_g, E~X_g), refractive index(n),dielectric constants(ε_∞, ε_0), elastic constants(C_11, C_12, C_44), and relevant parameters such as bulk(B_u), shear(S_h), and Young's(Y_0) moduli are studied, and other important parameters such as bond-stretching(α), bond-bending(β) force constant, internal-strain parameter(ζ), effective charges(e~*_T, Z~*), anisotropy factor(I_s), Poisson's ratio(P_o), Cauchy ratio(C_a), the ductility index(μ_D), and linear compressibility(C0_) are also calculated. The effects of pressure on all studied properties are investigated. Our results are in good agreement with the available experimental and theoretical data for BN,AlN, and InN.     

CeO2的电子结构，光学和晶格动力学性质：第一性原理研究

基于考虑了Ce-4f电子间的库仑作用U和交换作用J的LDA+U方案,应用第一性原理计算系统研究了CeO₂的电子结构,光学和晶格动力学性质.电荷密度和电子局域函数的分布特征表明,CeO₂是属于共价键的绝缘体.介电常数、玻恩有效电荷张量和声子色散曲线的计算值和相应的实验结果符合得比较好. 关键词： 电子结构 光学性质 晶格动力学 第一性原理计算     

闪锌矿GaN弹性性质、电子结构和光学性质外压力效应的理论研究

采用基于密度泛函理论(DFT)的第一性原理平面波赝势方法,结合广义梯度近似(GGA)下的RPBE和局域密度近似(LDA)的CA-PZ交换-关联泛函对闪锌矿结构的GaN在高压的性质进行了系统研究. 计算结果表明:弹性常数、体模量、杨氏模量和能隙都具有明显的外压力效应,计算结果与实验值和理论值很好的符合. 同时利用计算的能带结构和态密度系统分析了GaN的介电函数、折射率、反射率、吸收系数和能量损失函数等光学性质及其外压力效应. 分析结果为GaN的设计与应用提供了理论依据. 关键词： 第一性原理计算 电子结构 光学性质 闪锌矿GaN     

第一性原理研究[111]晶向硅纳米线电子结构,光学性质与压阻特性的应变效应

基于密度泛函理论体系下的广义梯度近似(GGA),利用第一性原理方法计算研究了单轴应变对[111]晶向硅纳米线的电子结构、光学性质以及压阻性质的影响.能带结构和光学性质的结果表明:压应变导致硅纳米线的带隙明显线性减小,且使其由直隙半导体转变为间隙半导体,而施加拉应变后硅纳米线仍为直隙半导体材料,但是带隙略有减小,且价带顶附近的能带线产生了较为复杂的变化.由于能带的应变效应导致其光学性质也相应发生了较大改变:拉应变使硅纳米线的介电峰出现宽化现象,低能区内的光吸收增强,静态折射率和反射率峰值增大,而压应变的效果则相反.结合能带结构与压阻系数计算模型得到的压阻特性结果表明:随着压应变的增加压阻系数单调减小,这主要归因于空穴浓度随压应变显著变化引起的;而拉应变作用时,压阻系数呈现波动趋势,这主要是由于空穴有效传输质量的增加程度和载流子浓度的增加程度不同而相互竞争导致的.上述计算结果表明,设计基于硅纳米线的光电和力电器件时,需考虑其应变效应.     

第一性原理研究[111]晶向硅纳米线电子结构，光学性质与压阻特性的应变效应

基于密度泛函理论体系下的广义梯度近似（GGA），利用第一性原理方法计算研究了单轴应变对[111]晶向硅纳米线的电子结构、光学性质以及压阻性质的影响．能带结构和光学性质的结果表明：压应变导致硅纳米线的带隙明显线性减小，且使其由直隙半导体转变为间隙半导体，而施加拉应变后硅纳米线仍为直隙半导体材料，但是带隙略有减小，且价带顶附近的能带线产生了较为复杂的变化．由于能带的应变效应导致其光学性质也相应发生了较大改变：拉应变使硅纳米线的介电峰出现宽化现象，低能区内的光吸收增强，静态折射率和反射率峰值增大，而压应变的效果则相反．结合能带结构与压阻系数计算模型得到的压阻特性结果表明：随着压应变的增加压阻系数单调减小，这主要归因于空穴浓度随压应变显著变化引起的；而拉应变作用时，压阻系数呈现波动趋势，这主要是由于空穴有效传输质量的增加程度和载流子浓度的增加程度不同而相互竞争导致的．上述计算结果表明，设计基于硅纳米线的光电和力电器件时，需考虑其应变效应．     

Interfacial defect engineering and photocatalysis properties of hBN/MX2 (M = Mo,W, and X = S,Se heterostructures

Van der Waals (VDW) heterostructures have attracted significant research interest due to their tunable interfacial properties and potential applications in many areas such as electronics, optoelectronic, and heterocatalysis. In this work, the influences of interfacial defects on the electronic structures and photocatalytic properties of hBN/MX₂ (M = Mo, W, and X=S, Se) are studied using density functional theory calculations. The results reveal that the band alignment of hBN/MX₂ can be adjusted by introducing vacancies and atomic doping. The type-I band alignment of the host structure is maintained in the heterostructure with n-type doping in the hBN sublayer. Interestingly, the band alignment changed into the type-II heterostructrue due to V_B defect and p-type doping is introduced into the hBN sublayer. This can conduce to the separation of photo-generated electron-hole pairs at the interfaces, which is highly desired for heterostructure photocatalysis. In addition, two Z-type heterostructures including hBN(Be_B)/MoS₂, hBN(Be_B)/MoSe₂, and hBN(V_N)/MoSe₂ are achieved, showing the decreasing of band gap and ideal redox potential for water splitting. Our results reveal the possibility of engineering the interfacial and photocatalysis properties of hBN/MX₂ heterostructures via interfacial defects.     

应力调控BlueP/XTe2(X=Mo,W)范德瓦耳斯异质结电子结构及光学性质理论研究

通过第一性原理计算探讨了蓝磷烯与过渡金属硫化物MoTe₂/WTe₂形成范德瓦耳斯异质结的电子结构和光学性质,以及施加双轴应力对相关性质的影响.计算结果表明,形成BlueP/XTe₂(X=Mo,W)异质结,二者能带排列为间接带隙type-Ⅱ并有较强的红外光吸收,同时屏蔽特性增强.随压缩应力增加,BlueP/XTe₂转变为直接带隙type-Ⅱ能带排列最后转变为金属性;随拉伸应力增加,异质结转变为间接带隙type-Ⅰ能带排列.外加应力也能有效调控异质结的光吸收性质,随压缩应力增加吸收边红移,光吸收响应拓展至中红外光谱区且吸收系数增大;BlueP/MoTe₂较BlueP/WTe₂在中红外至红外光区间表现出更强的光吸收响应;静态介电常数ε1(0)大幅增加.结果表明,压缩应力对BlueP/MoTe₂和BlueP/WTe₂能带排列、光吸收特性均有显著的调控作用,其中BlueP/MoTe₂对调控更敏感,这些特性也使BlueP/XTe₂异质结在窄禁带中红外半导体材料及光电器件具有令人期待的应用价值.     

Theoretical investigation of the elastic,electronic, thermodynamic and optical properties of the zinc-blende structure AlN under high pressure

The elastic, electronic, thermodynamic and optical properties of the zinc-blende structure aluminum nitride (AlN) under high pressure have been investigated using first-principles calculations. The dependencies of the elastic constants, the bulk modulus, the shear modulus and energy gaps on the applied pressure are presented, and the results are in good agreement with comparable experimental and theoretical values. Also, the energy band structure and density of states under high pressure have been analysed. Furthermore, the optical constants, including the dielectric function, optical reflectivity, refractive index and electron energy loss, are discussed for radiation up to 50 eV.     

高压下YB6的电子结构与光学性质的第一性原理研究

本文从第一性原理出发,基于密度泛函理论体系下的广义梯度近似（GGA）方法,对不同压力下YB6的电子结构及光学性质方面进行了研究。结果表明：在一定的压力范围内随着压力的增大,费米面以上的能带往高能量处移动,费米面以下的能带往低能量处移动。能量损失谱的第一个峰随着压力的增大往高能量处移动,并且峰强增大。这表明可以通过压力来调节YB6在可见光区的吸收谷的位置及强度,在高压下YB6将展现更好的隔热性能。     

First-principles study of structural,elastic, electronic and optical properties of RDX under pressure

ABSTRACT

The influences of pressure on structural, elastic, electronic and optical properties of α-RDX under pressure from 0 to 40?GPa have been investigated by performing first-principles calculations. The obtained structural parameters based on the GGA-PBE+G calculations are consistent with previous experimental values. The results of B/G, C₁₂-C₄₄ and Poisson's ratio show that α-RDX has changed to ductility under pressure between 0 and 5?GPa. The obvious rotation of NO₂ group in the equatorial position appears, especially in the range of pressure from 10 to 15?GPa, which influences the elastic and mechanical properties of α-RDX. Moreover, we find that the electrons of α-RDX become more active under higher pressure by comparing the curves of DOS under different pressure. Furthermore, the anisotropy of optical properties under different pressures has been shown.     

First principles study on the structural, electronic and optical properties of diluted magnetic semiconductors Zn1-xCoxX （X=S, Se, Te）

The electronic and optical properties of zincblende ZnX（X=S, Se, Te） and ZnX：Co are studied from density functional theory （DFT） based first principles calculations. The local crystal structure changes around the Co atoms in the lattice are studied after Co atoms are doped. It is shown that the Co-doped materials have smaller lattice constant （about 0.6%-0.9%）. This is mainly due to the shortened Co-X bond length. The （partial） density of states （DOS） is calculated and differences between the pure and doped materials are studied. Results show that for the Co-doped materials, the valence bands are moving upward due to the existence of Co 3d electron states while the conductance bands are moving downward due to the reduced lattice constants. This results in the narrowed band gap of the doped materials. The complex dielectric indices and the absorption coefficients are calculated to examine the influences of the Co atoms on the optical properties. Results show that for the Co-doped materials, the absorption peaks in the high wavelength region are not as sharp and distinct as the undoped materials, and the absorption ranges are extended to even higher wavelength region.     

Uniaxial strain-modulated electronic structures of CdX (X = S,Se, Te) from first-principles calculations:A comparison between bulk and nanowires

Using first-principles calculations based on density functional theory, we systematically study the structural deformation and electronic properties of wurtzite CdX(X = S, Se, Te) bulk and nanowires(NWs) under uniaxial [0001] strain. Due to the intrinsic shrinking strain induced by surface contraction, large NWs with {10ˉ10} facets have heavy hole(HH)-like valence band maximum(VBM) states, while NWs with {11ˉ20} facets have crystal hole(CH)-like VBM states. The external uniaxial strain induces an HH–CH band crossing at a critical strain for both bulk and NWs, resulting in nonlinear variations in band gap and hole effective mass at VBM. Unlike the bulk phase, the critical strain of NWs highly depends on the character of the VBM state in the unstrained case, which is closely related to the size and facet of NWs. The critical strain of bulk is at compressive range, while the critical strain of NWs with HH-like and CH-like VBM appears at compressive and tensile strain, respectively. Due to the HH–CH band crossing, the charge distribution of the VBM state in NWs can also be tuned by the external uniaxial strain. Despite the complication of the VBM state, the electron effective mass at conduction band minimum(CBM) of NWs shows a linear relation with the CBM–HH energy difference, the same as the bulk material.     

Strain-tunable electronic,elastic, and optical properties of CaI2 monolayer: first-principles study

ABSTRACT

The effects of biaxial strain on the electronic structure and the elastic and optical properties of monolayer CaI₂ were studied using first-principles calculations. The two-dimensional (2D) equation of state for monolayer CaI₂ as fit in a relative area of 80–120% is more accurate. The band gap can be tuned under strain and reached a maximum at a tensile strain of 4%. Under compressive strains, the absorption spectrum showed a significant red shift at higher strains. The static reflectance and static refractive index decreased in the strain range of ?10% to 10%.     

BaHfO3纳米薄膜电子结构、光学和弹性性质的第一性原理研究

采用基于密度泛函理论的第一性原理方法,在局域密度近似（LDA）下研究了厚度为0.626～2.711nm (100)面BaHfO3薄膜的电子结构、光学和弹性性质．电子结构和光学性质计算结果表明：以BaO为表面层原子的BaHfO3纳米薄膜均为直接带隙半导体材料,带隙随薄膜厚度减小而逐渐减小,表现出明显的量子尺寸效应,此时薄膜的光学吸收边发生红移,吸收带出现窄化现象．以HfO2作为表面层原子的BaHfO3薄膜则属于间接带隙半导体材料,且带隙随薄膜厚度减小而微弱增加．弹性性质计算结果表明：体弹模量、剪切模量和杨氏模量等表征材料硬度的力学参数均随BaHfO3纳米薄膜厚度减小而显著减小,呈现尺寸效应．电荷密度分布分析揭示了薄膜厚度改变了BaHfO3纳米薄膜的价健特性,这是材料硬度改变的内在原因．该研究结果为BaHfO3纳米薄膜材料的设计与应用提供了理论依据．     

Sb、Sm共掺杂SnO2的电子结构与光学性质第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,构建了Sm、Sb及Sm和Sb共掺杂SnO₂超晶胞模型,研究了经过几何优化后的各掺杂体系的焓变值、能带结构、态密度、电荷布居、介电常数、吸收系数、反射率等光电性质.结果表明：Sm和Sb的掺杂可以有效地提升SnO₂的导电性能,且Sb和Sm共掺杂体系的电学性能最佳. Sm和Sb掺杂还可以增加SnO₂在红外波段的电子极化能力和电子跃迁概率,提升了红外反射率,且共掺杂体系的电子束缚能力最强、反射率最高.这为SnO₂基光电材料的研制提供了一定的理论依据.     

Electronic structure and optical properties of LiXH3 and XLiH3 （X= Be,B or C）

The equilibrium lattice constant, the cohesive energy and the electronic properties of light metal hydrides LiXH3 and XLiH3 （X = Be, B or C） with perovskite lattice structures have been investigated by using the pseudopotential plane-wave method. Large energy gap of LiBeH3 indicates that it is insulating, but other investigated hydrides are metallic. The pressure-induced metallization of LiBeH3 is found at about 120 GPa, which is attributed to the increase of Be-p electrons with pressure. The electronegativity of the p electrons of X atom is responsible for the metallicity of the investigated LiXH3 hydrides, but the electronegativity of the s electrons of X atom plays an important role in the metallicity of the investigated XLiH3 hydrides. In order to deeply understand the investigated hydrides, their optical properties have also been investigated. The optical absorption of either LiBeH3 or BeLiH3 has a strong peak at about 5 eV, showing that their optical responses are qualitatively similar. It is also found that the optical responses of other investigated hydrides are stronger than those of LiBeH3 and BeLiH3 in lower energy ranges, especially in the case of CLiH3.     

Structural,electronic, optical and elastic properties of the complex K2PtCl6-structure hydrides ARuH6 (A = Mg,Ca, Sr and Ba): first-principles study

We report a systematic study of the structural, electronic, optical and elastic properties of the ternary ruthenium-based hydrides A₂RuH₆ (A = Mg, Ca, Sr and Ba) within two complementary first-principles approaches. We describe the properties of the A₂RuH₆ systems looking for trends on different properties as a function of the A sublattice. Our results are in agreement with experimental ones when the latter are available. In particular, our theoretical lattice parameters obtained using the GGA-PBEsol to include the exchange-correlation functional are in good agreement with experiment. Analysis of the calculated electronic band structure diagrams suggests that these hydrides are wide nearly direct band semiconductors, with a very slight deviation from the ideal direct-band gap behaviour and they are expected to have a poor hole-type electrical conductivity. The TB-mBJ potential has been used to correct the deficiency of the standard GGA for predicting the optoelectronic properties. The calculated TB-mBJ fundamental band gaps are about 3.53, 3.11, 2.99 and 2.68 eV for Mg₂RuH₆, Ca₂RuH₆, Sr₂RuH₆ and Ba₂RuH₆, respectively. Calculated density of states spectra demonstrates that the topmost valence bands consist of d orbitals of the Ru atoms, classifying these materials as d-type hydrides. Analysis of charge density maps tells that these systems can be classified as mixed ionic-covalent bonding materials. Optical spectra in a wide energy range from 0 to 30 eV have been provided and the origin of the observed peaks and structures has been assigned. Optical spectra in the visible range of solar spectrum suggest these hydrides for use as antireflection coatings. The single-crystal and polycrystalline elastic moduli and their related properties have been numerically estimated and analysed for the first time.     

第一性原理研究[112]硅锗异质结纳米线的电子结构与光学性质

基于密度泛函理论体系下的广义梯度近似,本文利用第一性原理方法着重研究了[112]晶向硅锗异质结纳米线的电子结构与光学性质.能带结构计算表明:随着锗原子数的增加,[112]晶向硅锗纳米线的带隙逐渐减小;对Si_(36)Ge_(24)H_(32)纳米线施加单轴应变,其能量带隙随拉应变的增加而单调减小.光学性质计算则表明:随着锗原子数的增加,[112]硅锗纳米线介电函数的峰位和吸收谱的吸收边均向低能量区移动;而随着拉应变的增大,吸收系数峰值呈现出逐渐减小的趋势,且峰位不断向低能量区移动,上述结果说明锗原子数的增加与施加拉应变均导致[112]硅锗纳米线的吸收谱产生红移.本文的研究为硅锗异质结纳米线光电器件研究与设计提供一定的理论参考.