铁磁金属薄膜磁性的电场调制

文章主要介绍了Science上发表的Weisheit M等人利用外加电场调制铁磁金属薄膜磁性的实验工作.该工作所用的实验方法简单、有效,为人们改变金属磁性开辟了一条崭新的道路.有序合金FePt和FePd具有垂直的磁晶各向异性,将它们置入碳酸丙烯脂的电解液中,利用铁磁薄膜和液体接触面形成的双电层电容结构,可以在样品表面产生很大的电场,从而可以调控金属薄膜费米面附近未成对的d电子的态密度.由于费米面附近电子填充数的变化,铁磁薄膜的磁晶各向异性也会受到调制.实验结果表明,-0.6mV的电压变化会导致厚度为2nm的 FePt和FePd合金的矫顽力分别减少4.5%和增加1%.这是第一次观测到电场调控金属薄膜磁性的实验工作.     

外电场作用下Si_2O分子的激发特性

主要对2种Si2O分子异构体的激发特性进行研究,由计算结果可知,外电场对Si2O分子的激发能,振子强度,跃迁偶极矩及吸收光谱有着显著的影响.无外电场时三角型Si2O(C2v,1A1)分子在可见光区无吸收谱,外电场作用下其在可见光区(407.18—526.93nm)有比较弱的吸收谱.直线型Si-Si-O(C∞v,3Σ-)分子在有无外电场作用时在蓝光和紫光区均有一定的吸收谱,其中比较难得的是在蓝色光区(478.88—488.59nm)呈现较强的吸收谱.     

Effect of electric field,stress and environment on delayed fracture of a PZT-5 ferroelectric ceramic

The combined effect of electric and mechanical loading on fracture of a PZT-5 ferroelectric ceramic in silicone oil has been investigated using a single edge notched specimen. The results show that the fracture toughness and the threshold stress intensity factor of delayed fracture in silicone oil, i.e. stress corrosion cracking, decrease linearly with the increasing applied electric field, either positive or negative. For the PZT-5 ferroelectric ceramics, delayed fracture in silicone oil under sustained positive or negative field can occur, and the threshold field for delayed fracture under sustained positive or negative field decreases linearly with applied stress intensity factor. The combined effect of electric and mechanical loading on delayed fracture in silicone oil includes field-enhancing delayed fracture under sustained load and stress-enhancing delayed fracture in silicone oil under sustained field.     

Properties of a Si2N molecule under an external electric field

In the present work,we adopt the ccsd/6-31g（d） method to optimize the ground state structure and calculate the vibrational frequency of the Si2N molecule.The calculated frequencies accord satisfactorily with the experimental values,which helps confirm the ground state structure of the molecule.In order to find how the external electric field affects the Si2N molecule,we use the density functional method B3P86/6-31g（d） to optimize the ground state structure and the time-dependent density functional theory TDDFT/6-31g（d） to study the absorption spectra,the excitation energies,the oscillator strengths,and the dipole moments of the Si2N molecule under different external electric fields.It is found that the absorption spectra,the excitation energies,the oscillator strengths,and the dipole moments of the Si2N molecule are affected by the external electric field.One of the valuable results is that the absorption spectra of the yellow and the blue-violet light of the Si2N molecule each have a red shift under the electric field.The luminescence mechanism in the visible light region of the Si2N molecule is also investigated and compared with the experimental data.     

Large scale domain switching around the tip of an impermeable stationary crack in ferroelectric ceramics driven by near-coercive electric field

It is widely accepted that the singular term plays a leading role in driving domain switching around the crack tip of ferroelectric ceramics.When an applied electric field approaches or even exceeds the coercive one,however,non-singular terms are no longer negligible and the switching of a large or global scale takes place.To analyze the large scale switching,one has to get a full asymptotic solution to the electric field in the vicinity of the crack tip.Take a double cantilever beam specimen as an example....     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.     

The giant Stark effect in armchair-edge phosphorene nanoribbons under a transverse electric field

We study the variation of electronic properties for armchair-edge phosphorene nanoribbons (APNRs) modulated by a transverse electric field. Within the tight-binding model Hamiltonian, and by solving the differential Schrödinger equation, we find that a band gap closure appears at the critical field due to the giant Stark effect for an APNR. The gap closure has no field polarity, and the gap varies quadratically for small fields but becomes linear for larger ones. We attribute the giant Stark effect to the broken edge degeneracy, i.e., the charge redistributions of the conduction band minimum and valence band maximum states localized at opposite edges induced by the field. By combined with the Green's function approach, it is shown that in the presence of the critical field a gap of density of states (DOS) disappears and a high value DOS turns up at the energy position of the band gap closure. Finally, as the field increases, we find the band gap decreases more rapidly and the gap closure occurs at smaller fields for wider ribbons. Both the band gap and DOS variations with the field show an insulator-metal transition induced by a transverse electric field for the APNR. Our results show that wider APNRs are more appreciable to design field-effect transistors.     

Properties of a Si₂N molecule under an external electric field

In the present work,we adopt the ccsd/6-31g(d) method to optimize the ground state structure and calculate the vibrational frequency of the Si2N molecule.The calculated frequencies accord satisfactorily with the experimental values,which helps confirm the ground state structure of the molecule.In order to find how the external electric field affects the Si2N molecule,we use the density functional method B3P86/6-31g(d) to optimize the ground state structure and the time-dependent density functional theory TDDFT/6-31g(d) to study the absorption spectra,the excitation energies,the oscillator strengths,and the dipole moments of the Si2N molecule under different external electric fields.It is found that the absorption spectra,the excitation energies,the oscillator strengths,and the dipole moments of the Si2N molecule are affected by the external electric field.One of the valuable results is that the absorption spectra of the yellow and the blue-violet light of the Si2N molecule each have a red shift under the electric field.The luminescence mechanism in the visible light region of the Si2N molecule is also investigated and compared with the experimental data.     

外场下二甲基硅酮双自由基的从头计算研究

本文首先采用密度泛函(DFT)方法在6-311+g(2d,p)基组水平上计算研究了二甲基硅酮双自由基的红外振动光谱和核磁共振化学位移,而后在同样的基组水平上采用含时密度泛函(TDDFT)方法研究了外电场对二甲基硅酮双自由基的激发态、偶极矩和分子能量的影响,结果表明,不同方向的外加电场对他们的影响情况各不相同,沿X、Y方向的电场对激发态的激发能、振子强度影响在外加电场为0.005～0.010 a.u.是转折点,沿Z方向的电场在电场强度为0.015 a.u.是转折点.沿Y方向的外电场对分子的偶极矩、分子能量影响最大,沿X方向的外电场次之,沿Z方向的外电场对偶极矩和分子能量影响最小.     

Coalescence behaviour of two large water-drops in viscous oil under a DC electric field

Electrically driven coalescence is one of the important methods to separate water from crude oils. In this paper, the coalescence behaviour of two water drops was studied experimentally using a high-speed imaging. The results show that the electric force induces the drops migrating towards each other before their contact. However the electric force drags the drops to separate after contact. There is a critical electric field strength above which the two drops would be separated again after they have been coalesced together. The understanding of the electric coalescence could be helpful to advance the design of the electrocoalescencers.     

Deformation and breakup of aqueous drops in viscous oil under a uniform AC electric field

Electric coalescence in alternating current (AC) electric fields is an important electrical dehydration technology. The deformation and breakup of water drops are crucial to the application of this process. In this study, these procedures were examined experimentally in an AC electric field using a high-speed camera. The deformation and breakup of drops depend on the intensity and frequency of this field. Deformation is aggravated by the increase in frequency under a constant electric field strength. Furthermore, the electric strength of breakup weakens as the frequency increases. Thus, understanding the deformation process can help advance electrocoalescencer design.     

Influence of spin-orbit coupling induced by in-plane external electric field on the intrinsic spin-Hall effect in a Rashba two-dimensional electron gas

We study theoretically the influence of spin--orbit coupling induced by in-plane external electric field on the intrinsic spin-Hall effect in a two-dimensional electron gas with Rashba spin--orbit coupling. We show that, after such an influence is taken into account, the static intrinsic spin-Hall effect can be stabilized in a disordered Rashba two-dimensional electron gas, and the static intrinsic spin-Hall conductivity shall exhibit some interesting characteristics as conceived in some original theoretical proposals.     

Built-in electric field effect on cyclotron mass of magnetopolarons in a wurtzite In_xGa_（1-x）N/GaN quantum well

The cyclotron mass of magnetopolarons in wurtzite In x Ga 1 x N/GaN quantum well is studied in the presence of an external magnetic field by using the Larsen perturbation method.The effects of the built-in electric field and different phonon modes including interface,confined and half-space phonon modes are considered in our calculation.The results for a zinc-blende quantum well are also given for comparison.It is found that the main contribution to the transition energy comes from half-space and interface phonon modes when the well width is very small while the confined modes play a more important role in a wider well due to the location of the electron wave function.As the well width increases,the cyclotron mass of magnetopolarons first increases to a maximum and then decreases either with or without the built-in electric field in the wurtzite structure and the built-in electric field slightly reduces the cyclotron mass.The variation of cyclotron mass in a zinc-blende structure is similar to that in a wurtzite structure.With the increase of external magnetic field,the cyclotron mass of polarons almost linearly increases.The cyclotron frequency of magnetopolarons is also discussed.     

Influence of a strong longitudinal static electric field on free carrier faraday effect in an n-type InSb at room temperature at submillimeter wave frequencies

The expression for free carrier Faraday rotation and for ellipticity , as the function of the applied parallel static electric field and static magnetic field for a given value of wave angular frequency and electron concentration N₀, are obtained and theoretically analyzed with the aid of one-dimensional linearized wave theory and Kane's non-parabolic isotropic dispersion law. It is shown that the maximum Faraday rotation occurs near the cyclotron resonance condition, which can be expressed as , where , , and . Here m^* and e denote the effective mass and charge of electron, respectively. _g is the forbidden bandgap of semiconductor. v₀ is the carrier drift velocity, which is a non-linear function of E₀ in high field condition. A possibility of a simple way of determining the non-linear v₀ vs E₀ characteristics of semiconductors by the measurement of Faraday rotation is also discussed.     

导体球壳上感应电荷及空间电场的分布(2)

本文利用镜象法讨论了在不接地导体球壳附近有点电荷时，空间的电场分布和球壳表面上感应电荷的分布。