p型导电掺In的SnO2薄膜的制备及表征

采用溶胶-凝胶提拉法成功地制备了p型导电掺In的SnO2薄膜.x射线衍射测试结果表明，掺In的SnO2薄膜保持SnO2的金红石结构.吸收谱测试结果表明，掺In的SnO2禁带宽度为3.8eV.霍尔测量结果表明，空穴浓度与热处理温度有很大的关系，525℃为最佳热处 理的温度.铟锡原子比在0.05—0.20范围内，空穴的浓度与In的含量有直接的关系，并随In含量的增加而增加. 关键词： SnO2 溶胶-凝胶法 p型导电     

p型导电掺In的SnO_2薄膜的制备及表征

采用溶胶 凝胶提拉法成功地制备了p型导电掺In的SnO2 薄膜 .x射线衍射测试结果表明 ,掺In的SnO2 薄膜保持SnO2 的金红石结构 .吸收谱测试结果表明 ,掺In的SnO2 禁带宽度为 3 8eV .霍尔测量结果表明 ,空穴浓度与热处理温度有很大的关系 ,5 2 5℃为最佳热处理的温度 .铟锡原子比在 0 0 5— 0 2 0范围内 ,空穴的浓度与In的含量有直接的关系 ,并随In含量的增加而增加     

p型透明导电材料BaSnO3的第一性原理研究

基于密度泛函理论,从头计算了N以及N和Sb共掺BaSnO₃的电子结构和光学性质.结果表明N单掺BaSnO₃与N和Sb共掺BaSnO₃均为p型透明导电材料,在可见光区透过率均在80%以上,且N和Sb共掺具有更高的电导率.计算结果为实验上制备p型钙钛矿结构透明导电材料提供了强有力的理论指导. 关键词： p型透明导电材料 电子结构 光学性质     

p-type ZnO thin films grown by RF plasma beam assisted Pulsed Laser Deposition

The high exciton binding energy and band gap energy of ZnO thin films open the prospect of fabricating semiconductor lasers in the ultraviolet spectral range. A prerequisite for laser diode fabrication is highly p-doped ZnO which was not reproducibly obtained up to now. Without intentional doping ZnO exhibits n-type conduction. ZnO thin films have been obtained by radio-frequency assisted pulsed laser deposition. A metallic Zn target was used for ablation in an oxygen and nitrogen RF discharge. The electrical and morphological properties of the films grown on Si were studied by Atomic Force Microscopy (AFM), X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), optical absorption and Hall Effect measurements for different ratios between the nitrogen and oxygen content. The AFM images of the as-grown ZnO films reveal high quality surfaces with low values for the surface roughness and a sharp distribution of grains sizes as an effect of the RF discharge. The XRD patterns for all samples exhibit only (002) and (004) peaks indicating that the c-axis is always oriented normal to the substrate surface. The films present p-type conductivity with different carrier concentration and mobility depending on the nitrogen/oxygen ratio.     

Lateral photovoltaic effects in Bi2Sr2Co2Oy thin films

Lateral photovoltaic （LPV） effects are observed in Bi2Sr2Co2Oy （BSCO） thin fihns. Upon illumination of a 532-111n constant laser, the lateral photovoltage is observed to vary linearly with tile laser position between two electrodes on tile film surface, and the position sensitivity can be enhmlced by coating a layer of graphite on the surface of the BSCO film as a light absorber. Results suggest that the LPV effect ill the thin fihn is independent of the photo-generated carriers but originates from thermoelectric effects. The present work demonstrates a potential application of BSCO films in position-sensitive photo （thermal） detectors.     

Anisotropic fluctuation magnetoconductivity in Bi2Sr2Ca2Cu3Ox thin films

Measurements of the fluctuation magnetoconductivity as a function of both the magnetic field up to 13 T and the temperature in thin films of Bi₂Sr₂Ca₂Cu₃O_x are presented. The variation of the magnetoconductivity with the magnetic field strength is quadratic at temperatures distantly above the critical temperatureT _c and changes to an entirely negative curvature nearT _c . The latter behavior is attributed to an inhomogeneous critical temperature in the films. The results are analyzed in terms of recent theoretical models for fluctuation-enhanced magnetoconductivity in layered superconductors. The magnetoconductivity in a magnetic field oriented normal to the copper-oxide layers is dominated by the orbital contribution of the Aslamazov-Larkin effect. The magnetoconductivity in the parallel orientation is distinctly smaller and provides evidence for the corresponding Zeeman contribution. The latter measurement also indicates that the Maki-Thompson process may be insignificant in Bi₂Sr₂Ca₂Cu₃O_x.     

N离子注入富氧ZnO薄膜的p型导电及拉曼特性研究

采用射频磁控溅射法在富氧环境下制备ZnO薄膜, 继而结合N离子注入及热退火实现薄膜的N掺杂及p 型转变, 借助霍尔测试和拉曼光谱研究了N离子注入富氧ZnO薄膜的p型导电及拉曼特性. 结果表明, 在 600 ℃温度下退火120 min可获得性能较优的p-ZnO: N薄膜, 其空穴浓度约为2.527×10¹⁷ cm^-3. N离子注入ZnO引入了三个附加拉曼振动模, 分别位于274.2, 506.7和640.4 cm^-1. 结合电学及拉曼光谱的分析发现, 退火过程中施主缺陷与N受主之间的相互作用对p-ZnO的形成产生重要影响.     

Optical and electrical properties of p-type ZnO fabricated by NH3 plasma post-treated ZnO thin films

In this paper, a simple method is reported to obtain nitrogen-doped p-ZnO film. In this method NH₃ plasma, generated in a plasma-enhanced chemical vapor deposition system, was employed to treat ZnO thin film. By Hall-effect measurement, a p-type conductivity was observed for the treated film with the hole density of 2.2 × 10¹⁶ cm⁻³. X-ray photoelectron spectroscopy (XPS) results confirmed that nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions. In low temperature photoluminescence spectra, an emission peak corresponding to acceptor-donor pair was observed. From this emission peak we calculated the N-related acceptor binding energy to be 130 meV.     

溶胶-凝胶法制备Sr2Bi4Ti5O18薄膜及其铁电性能研究

采用溶胶-凝胶法,在氧气氛中和层层晶化的工艺条件下,成功地制备了沉积在Pt/Ti/SiO2/Si(100)衬底上的铁电性能优良的Sr2Bi4Ti5O18(SBTi)薄膜,并研究了SBTi薄膜的微结构、表面形貌、铁电性能和疲劳特性.研究表明:薄膜具有单一的层状钙钛矿结构,且为随机取向;薄膜表面光滑,无裂纹,厚度约为725nm;铁电性能测试显示较饱和、方形的电滞回线,当外电场强度为275kV/cm时,其剩余极化2Pr和矫顽场2Ec分别为24.0μC/cm2和137.8kV/cm;疲劳测试发现薄膜经过4.4×1010次极化反转后,基本没有显示疲劳.     

原位氧化Zn3N2制备p型ZnO薄膜的性能研究

采用射频反应溅射法在玻璃衬底上制备Zn₃N₂薄膜，然后向真空室中通入纯氧气进行热氧化制备ZnO薄膜.利用X射线衍射、扫描电子显微镜、霍尔效应测量、透射光谱和光致发光光谱等表征技术，研究了氧化温度和氧化时间对ZnO薄膜的结晶质量、电学性质和光学性能的影响.研究结果显示，450 ℃ 下氧化2 h后的样品中除含有ZnO外，还有Zn₃N₂成分，500 ℃下氧化2 h可以制备出电阻率为0.7 Ωcm，空穴载流子浓度为10^{关键词： p型ZnO薄膜 3N₂薄膜')" href="#">Zn₃N₂薄膜 射频溅射 原位氧化}     

The influence of low-temperature annealing on the physical properties of Bi2Sr2CaCu2O y thin films

We have studied the low-temperature annealing effect on the physical properties of Bi₂Sr₂CaCu₂O _y thin films deposited on a MgO(100) substrate by rf magnetron sputtering. It is found that the characteristics of the films depend strongly on the oxygen partial pressure during re-annealing at 470°C after high-temperature annealing at 770°C in air. T_c and ρ at 300 K abruptly change for less than 20% oxygen partial pressure. A peak shift of the Bi4f core level spectrum is also observed at 0% oxygen partial pressure in an XPS measurement, which is due to the change in the ligand of the Bi atom.