二维圆盘颗粒体系声学行为的数值研究

数值测量了卸载过程中二维单分散圆盘颗粒系统的横波、纵波声速、声衰减系数、非线性系数随压强的变化以及声衰减系数随频率的变化.结果表明,二维(2D)圆盘颗粒体系的横波、纵波声速均随压强呈分段幂律标度:当压强P10~(-4)时,横波、纵波声速随压强的增大而减小;当P10~(-4)时,有v_t~P~(0.202),v_l~P~(0.338).进一步得到其剪切模量和体积模量的比值G/B也随压强呈幂律标度,G/B~P~(-0.502),暗示在低压强下,与三维(3D)球形颗粒体系类似,2D圆盘颗粒体系也处于L玻璃态.水平激励和垂直激励下2D圆盘颗粒系统的衰减系数随频率变化也呈现分段行为:当频率f0.05时,衰减系数不随f变化;当f0.05时,横波纵波的衰减系数α~f;当f0.35时,横波衰减系数α_T~f~2,纵波衰减系数α_L~f~(1.5).此外,竖直水平激励下的2D圆盘颗粒系统的非线性系数和衰减系数随压强也呈现与声速类似的分段规律:当P10~(-4)时,横波非线性系数β_T~P~(-0.230),其余都不随压强变化.当P10~(-4)时,两者均随压强增大呈幂律减小:β_T~P~(-0.703),β_L~P~(-0.684),α_T~P~(-0.099),α_L~P~(-0.105).进而得到2D圆盘颗粒系统中散射相关的特征长度?~*随压强呈幂律标度,当P10~(-4)时,?~*~P~(-0.595);当P10~(-4)时,?~*~P~(0.236).     

Ultrasonically determined thickness of long cortical bones: two-dimensional simulations of in vitro experiments

Previously it has been demonstrated that cortical bone thickness can be estimated from ultrasonic guided-wave measurements, in an axial transmission configuration, together with an appropriate analytical model. This study considers the impact of bone thickness variation within the measurement region on the ultrasonically determined thickness (UTh). To this end, wave velocities and UTh were determined from experiments and from time-domain finite-difference simulations of wave propagation, both performed on a set of ten human radius specimens (29 measurement sites). A two-dimensional numerical bone model was developed with tunable material properties and individualized geometry based on x-ray computed-tomography reconstructions of human radius. Cortical thickness (CTh) was determined from the latter. UTh data for simulations were indeed in a excellent accordance (root-mean-square error was 0.26 mm; r2=0.94, p<0.001) with average CTh within the measurement region. These results indicate that despite variations in cortical thickness along the propagation path, the measured phase velocity can be satisfactorily modeled by a simple analytical model (the A(0) plate mode in this case). Most of the variability (up to 85% when sites were carefully matched) observed in the in vitro ultrasound data was explained through simulations by variability in the cortical thickness alone.     

Experimental observation of a copious yield of electrons with small transverse momenta in pp collisions at high energies

Inclusive electron and positron emission have been observed for θ_cm = 30° and S = 2800 GeV² at the CERN Intersecting Storage Rings (ISR). Over the transverse momentum interval 0.2 GeV/c < p_T < 1.5 GeV/c, electrons and positrons, which are equal in number within the experimental accuracies, appear to grow with respect to other particles (pions) approximately like 1/p_T. We are unable to explain their number and p_T-dependence in terms of “conventional” mechanisms.     

Direct determination of track etch rate and response of CR-39 to normal incidence high-energy heavy ions

Response of CR-39 to high-energy heavy ions was investigated by using optical microphotographs of track profiles for Ar (480 MeV/n) and Ni (300 MeV/n). The depth dependence of track etch rate (V_T) was determined experimentally by track length measurement. The results indicate that V_T for the low REL Ar tracks is depth independent but for the high REL Ni tracks V_T is gradually decreasing with depth. The region beyond 30 μm depth inside the detector shows a stable region regarding the detector response for both ions.     

3-D Confocal microscopy track analysis: a promising tool for determining CR-39 response function

A new method based on the use of the confocal microscope is described in order to evaluate the CR-39 response function for Li-7 ions with an incident energy of 10.77 MeV. This method uses the formulations developed by Fromm et al. and considers two etching velocities: V_B represents the bulk etch rate and remains constant, and V_T the track etch rate, which varies along the particle's path. The confocal microscope seems to bring big improvements for track analysis. The first results of V_T versus the particle range are presented and compared with the curves obtained by the sequential etching method. The obtained V_T are plotted and compared to LET, REL₃₅₀ and the cumulative radial dose.     

Transverse momentum distribution in Drell-Yan pair and W and Z boson production

We exhibit and discuss the QCD prediction for the transverse momentum distribution of W bosons, Z bosons and high-mass virtual photons produced in high-energy hadron-hadron collisions. Recent work has shown that this prediction is consistent with the structure of leading twist initial state interactions.

The expression we present is expected to give results correct up to order _s^N(Q) for any Q_T when the boson mass Q is very large (> 10⁸ GeV!), given only input from perturbative calculations at order _s^N+2 and deeply inelastic scattering structure functions. We specify the required N = 0 coefficients, employing the order _s² results of Kodaira and Trentadue and of Davies and Stirling. We then show how the expression should be modified to deal with current energy scales. We also discuss the connection between low-Q_T and high-Q_T formulae.     

多孔介质中非等温互溶流体驱替过程的格子Boltzmann研究

利用格子Boltzmann方法,在孔隙尺度上对多孔介质内非等温混溶驱替过程进行数值研究,定量分析温度粘性膨胀系数（β_T）以及路易斯数（Le）对界面不稳定性和驱替效率的影响.结果表明：随着β_T的增大,界面不稳定性增强,驱替效率降低.当β_T>0时,随着Le的增大,界面不稳定性减弱,驱替流体与被驱替流体之间的界面趋于平缓,指尖残余率减小,驱替效率增大.当β_T<0时,Le对于驱替效率的影响相反.     

Mean displacement moments and survival times in the trapping model with strong fields

The mean displacement moments for the strong field trapping model are calculated. Their asymptotic behaviour is Xⁿ(t) (V_efft)ⁿ, where V_eff is an effective drift velocity. This is in sharp contrast with the weak field case, for which Xⁿ(t) t^n/3. The mean survival (first passage) time and the upstream and downstream trapping probabilities are also obtained.     

Thermodynamics of mixtures containing alkoxyethanols. Part XXV. Densities, excess molar volumes and speeds of sound at 293.15, 298.15 and 303.15 K, and isothermal compressibilities at 298.15 K for 2-alkoxyethanol + 1-butanol systems

Densities, ρ, and speeds of sound, u, of systems formed by 2-methoxyethanol (2ME), 2-ethoxyethanol (2EE), 2-propoxyethanol (2PE), or 2-butoxyethanol (2BE) and 1-butanol have been measured at 293.15, 298.15 and 303.15 K and atmospheric pressure using a vibrating tube densimeter and sound analyser Anton Paar model DSA-5000. The ρ and u values were used to calculate excess molar volumes, V^E, at those temperatures and deviations from the ideal behaviour of the thermal expansion coefficient, Δ_P, or of the isentropic and isothermal compressibilities, Δκ_S and Δκ_T at 298.15 K. From the data, it is apparent that the interactional contribution to V^E is more important for systems with 2ME or 2EE, while structural effects are more relevant in the 2PE or 2BE mixtures, and that dipolar interactions decrease with the size of the 2-alkoxyethanol. Several methods are applied to predict speeds of sound: free length theory (FLT), collision factor theory (CFT), and Nomoto, Junjie and Van Dael equations. CFT and Nomoto's equation provide the better predictions. Finally, 1-butanol + 2-alkoxyethanol, or + 2-(2-alkoxyethoxy)ethanol mixtures have been studied using ERAS. Poorer results were obtained for systems including 2-(2-alkoxyethoxy)ethanols, which may be due to dipolar interactions and structural effects are more important in such solutions.     

Effect of oxide thickness on the capacitance and conductance characteristics of MOS structures

In this work, the investigation of the interface states density and series resistance from capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics in Au/SnO₂/n-Si (MOS) structures prepared at various SnO₂ layer thicknesses by spray deposition technique have been reported. It is fabricated five samples depending on deposition time. The thicknesses of SnO₂ films obtained from the measurement of the oxide capacitance in the strong accumulation region for MOS Schottky diodes are 37, 79, 274, 401, and 446 Å, for D1, D2, D3, D4, and D5 samples, respectively. The C–V and G–V measurements of Au/SnO₂/n-Si MOS structures are performed in the voltage range from −6 to +10 V and the frequency range from 500 Hz to 10 MHz at room temperature. It is observed that peaks in the forward C–V characteristics appeared because of the series resistance. It has been seen that the value of the series resistance R_s of samples D1 (47 Ω), D2 (64 Ω), D3 (98 Ω), D4 (151 Ω), and D5 (163 Ω) increases with increasing the oxide layer thickness. The interface state density D_it ranges from 2.40×10¹³ cm⁻² eV⁻¹ for D1 sample to 2.73×10¹² cm⁻² eV⁻¹ for D5 sample and increases with increasing the oxide layer thickness.     

电流驱动凹槽磁纳米带内斯格明子的移动特性

基于微磁学理论和模拟研究电流驱动的斯格明子的移动特性.相对于纳米带,凹槽纳米带可提供更大的边缘排斥力抑制斯格明子横向移动,最大驱动电流(Jmax)和最大斯格明子移动速度(Vmax)显著增加.随着注入电流密度的增加,凹槽纳米带内斯格明子移动速度先增加到最大速度,而后减小或保持不变.通过增加边缘宽度或厚度,Jmax和Vma...     

Measurements of high pT light fragments at CM 90° in 800 A MEV C + C collisions

The spectra of high-p_T fragments have been measured at CM 90° in 800 A MeV C + C collisions for p_T up to 1.8 GeV/c (proton), 2.5 GeV/c (deuteron) and 2.8 GeV/c (triton) at the Bevalac. Invariant cross sections were measured down to eight orders of magnitude lower than those for production of low momentum protons. The proton spectrum shows a significant deviation from the Boltzmann shape in the high-energy region. The spectra of deuterons and tritons are explained well by, respectively, squaring and cubing the observed proton spectra.     

Incoherent bremsstrahlung in nuclei

We have studied the processes A(e, e′γ)X in nuclei, or incoherent bremsstrahlung, and determined expressions for the cross section in terms of the same nuclear response functions R_L, R_T, which appear in inclusive electron scattering (e, e′) in nuclei. Calculations of the cross sections are carried out using a Fermi gas model, complemented by the local-density approximation, to evaluate the response functions. We have carried out a study which shows that the reaction can be used to determine reliably the response functions from experimental data. On the other hand we have compared the incoherent bremsstrahlung with the coherent one in order to see the limits to the tagging technique, which produces monochromatic photons based on the assumption of the dominance of the coherent process. We observe that at energies E_γ < 1 GeV the dominance of the coherent process extends to relatively large scattering angles, making the present technique completely safe. However, as the energy of the electron increases, the region of dominance of the coherent process is reduced to smaller scattering angles. These results should be of use when extending the tagging technique to planned or future electron facilities.     

Analysis of ultrasonic guided waves propagating in long bones and cortical thickness based on time-frequency methods

The ultrasonic signals in long bones contain multiple guided modes which are mutual superposed.The velocities of guided waves in long bones are very sensitive to cortical thickness (CTh).In this paper,Hilbert-Huang transform(HHT) was proposed to analyze multi-mode guided waves,which can decompose superposed waves into many independent modes.Then the group velocity of each mode was obtained at corresponding frequency,which was compared with the results of short time Fourier transform(STFT).The CTh was also obtained by comparing with the theoretical calculation.The results showed that the experimental determined thickness was in agreement with the actual CTh,indicating that measuring the velocity of the guided mode can be used to estimate the CTh.The HHT is an effective method to identify multimode guided waves.     

First-principles calculations of thermodynamic properties of TiB2 at high pressure

The equations of state (EOS) and other thermodynamic properties of TiB₂ are investigated using ab initio plane-wave pseudopotential density functional theory method. The obtained results are in good agreement with the experimental measured data and other theoretical calculated ones. Through the quasi-harmonic Debye model, in which the phononic effects are considered, the dependences of relative volume V/V₀ on pressure P, cell volume V on temperature T, and Debye temperature Θ and specific heat C_V on pressure P are successfully obtained.     

Analysis of frequency-dependent series resistance and interface states of In/SiO2/p-Si (MIS) structures

In this work, the investigation of the interface state density and series resistance from capacitance–voltage (C–V) and conductance–voltage (G/ω−V) characteristics in In/SiO₂/p-Si metal–insulator–semiconductor (MIS) structures with thin interfacial insulator layer have been reported. The thickness of SiO₂ film obtained from the measurement of the oxide capacitance corrected for series resistance in the strong accumulation region is 220 Å. The forward and reverse bias C–V and G/ω−V characteristics of MIS structures have been studied at the frequency range 30 kHz–1 MHz at room temperature. The frequency dispersion in capacitance and conductance can be interpreted in terms of the series resistance (R_s) and interface state density (D_it) values. Both the series resistance R_s and density of interface states D_it are strongly frequency-dependent and decrease with increasing frequency. The distribution profile of R_s–V gives a peak at low frequencies in the depletion region and disappears with increasing frequency. Experimental results show that the interfacial polarization contributes to the improvement of the dielectric properties of In/SiO₂/p-Si MIS structures. The interface state density value of In/SiO₂/p-Si MIS diode calculated at strong accumulation region is 1.11×10¹² eV⁻¹ cm⁻² at 1 MHz. It is found that the calculated value of D_it (≈10¹² eV⁻¹ cm⁻²) is not high enough to pin the Fermi level of the Si substrate disrupting the device operation.     

Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers

Thin films of titanium dioxide have been deposited on strained Si_0.82Ge_0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C₃H₇)₄] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (D_it), fixed oxide charge density (Q_f/q) and flat-band voltage (V_FB) of as-deposited films were found to be 13.2, 40.6 Å, 6×10¹¹ eV⁻¹ cm⁻², 3.1×10¹¹ cm⁻² and −1.4 V, respectively. The capacitance–voltage (C–V), current–voltage (I–V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications.     

Pre-transitional effects in a nematic and a polymesomorphic liquid crystal

Measurements of ultrasonic velocity V, specific volume v and adiabatic compressibility K_ad are carried out in a monotropic nematic liquid crystal, p-anisal-p-phenetidine (pApP), and a polymesomorphic liquid crystal, p-n-decyloxybenzoyl-p-cresol (DBC) with nematic and smectic A phases. Temperature variation of the order parameter is estimated. The pre-transitional effects observed in v and K_ad are discussed on the basis of de Gennes' theory generalized by Bendler, and the critical exponents are estimated.     

Landau damping in degenerate solid state plasmas

Helicon waves are found useful for studying Landau damping in degenerate plasmas. The damping is analyzed as the phase velocity of the wave is increased from ω/q v_F to ω/q v_F. There is no first-orderlike transition at ω/q = V_F. In the collisionless limit, the damping tends to zero as ω/q → v_F. For finite collision times τ it does not vanish for ω/q > v_F. Nonlocal corrections to the wavelength exhibit a peak at ω/q = V_F, which degenerates into a shoulder for ωτ 100.     

Determination of localized states in porous silicon

We determined the density of state distribution near the Fermi level in porous silicon from the analysis of the current–voltage (J–V) and the current–thickness (J–T) characteristics in the space-charge-limited-current (SCLC) regime. The distribution exhibits a minimum density at the Fermi level, which is similar to the U-shape-trap-distribution observed in crystalline Si–SiO₂ interface or in amorphous Si. Theoretical analysis well explains both the J–V and the J–L characteristics, which implies that the current flow is entirely controlled by localized states situated at the quasi-Fermi level.