基于Pancharatnam-Berry相位和动力学相位调控纵向光子自旋霍尔效应

提出了一种基于Pancharatnam-Berry相位和动力学相位操控纵向光子自旋霍尔效应的方法.理论分析表明:当光场通过一个由Pancharatnam-Berry相位透镜和动力学相位透镜构成的透镜组时,透镜组会存在两个自旋相关的焦点.首先,当左旋和右旋圆偏振光通过微结构相位延迟为π的Pancharatnam-Berry相位透镜时,由于Pancharatnam-Berry相位的自旋相关性,两个圆偏振分量会获得符号相反的Pancharatnam-Berry相位而导致其中一个被聚焦而另一个发散.然后,在Pancharatnam-Berry相位透镜后再插入普通透镜引入动力学相位调制,由于动力学相位是自旋无关,使得这一透镜组,可以在合适的条件下使不同自旋态的光子分别聚焦于纵向上不同焦点处.纵向自旋分裂由两透镜焦距及间距共同决定,因此可以通过改变两个透镜的焦距及其间距获得任意的纵向自旋分裂值.最后,搭建了一套实验装置,所得实验结果与理论结果一致.     

Enhancing terahertz photonic spin Hall effect via optical Tamm state and the sensing application

The photonic spin Hall effect (PSHE), characterized by two splitting beams with opposite spins, has great potential applications in nano-photonic devices, optical sensing fields, and precision metrology. We present the significant enhancement of terahertz (THz) PSHE by taking advantage of the optical Tamm state (OTS) in InSb-distributed Bragg reflector (DBR) structure. The spin shift of reflected light can be dynamically tuned by the structural parameters (e.g. the thickness) of the InSb-DBR structure as well as the temperature, and the maximum spin shift for a horizontally polarized incident beam at 1.1 THz can reach up to 11.15 mm. Moreover, we propose a THz gas sensing device based on the enhanced PSHE via the strong excitation of OTS for the InSb-DBR structure with a superior intensity sensitivity of 5.873×10⁴ mm/RIU and good stability. This sensor exhibits two orders of magnitude improvement compared with the similar PSHE sensor based on InSb-supported THz long-range surface plasmon resonance. These findings may provide an alternative way for the enhanced PSHE and offer the opportunity for developing new optical sensing devices.     

基于合金介电常数的可控特性增强光子自旋霍尔效应

基于平面角谱理论,系统研究了BK7玻璃-合金薄膜-空气结构中合金介电常数的变化对反射光自旋霍尔效应的调控规律.数值仿真结果表明,该结构发生表面等离激元共振的共振角主要受合金介电常数实部的影响,随介电常数实部的增加而增大,而虚部对共振角变化的影响相对较小.不同介电常数合金在其共振角处得到的较大光子自旋霍尔效应横移呈集中的带状分布,选取介电常数-2.8+1.6i的Ag-Ni合金时,光子自旋霍尔效应横移能达到1.2×10~5 nm.研究还发现将入射角固定为44.1°时,光子自旋霍尔效应横移随合金介电常数的变化呈轴对称分布,并以最大值为中心呈球面状辐射,离中心点越远光子自旋霍尔效应横移越小.选取介电常数-10.6+1.2i的Ag-Au合金时,光子自旋霍尔效应横移最大能达到8000 nm,相比于以往纯金属纳米结构BK7玻璃-金-空气中得到的最大光子自旋霍尔效应横移3000 nm有了较大的提高.该研究不仅能够有效增强光子自旋霍尔效应,还能为设计等离激元共振传感器等纳米光子器件提供理论依据.     

异常霍尔效应和自旋霍尔效应

异常霍尔效应和自旋霍尔效应是在常规霍尔效应的基础上引发出的2种新现象.本文介绍了这2种现象及其原理和潜在的应用.     

光自旋霍尔效应及其研究进展

光束在经过非均匀介质后,自旋角动量相反(左、右旋圆偏振)的光子在垂直于入射面的横向相互分离,造成光束的自旋分裂,这种现象叫做光自旋霍尔效应.它类似于电子系统中的自旋霍尔效应:自旋光子扮演自旋电子的角色,而折射率梯度则起外场作用.光自旋霍尔效应为操控光子提供了新的途径,在纳米光学、量子信息和半导体物理方面具有重要的应用前景;同时由于它与凝聚态和高能物理中的带电粒子自旋霍尔效应有高度的相似性和共同的拓扑根源,所以又为测量自旋霍尔效应这类弱拓扑现象提供了独特而又方便的机会.文章简单介绍了光自旋霍尔效应,并总结了近几年国内外的研究进展.     

Enhanced photonic spin Hall effect with subwavelength topological edge states

Photonic structures offer unique opportunities for controlling light‐matter interaction, including the photonic spin Hall effect associated with the transverse spin‐dependent displacement of a light beam that propagates in specially designed optical media. However, due to small spin‐orbit coupling, the photonic spin Hall effect is usually weak at the nanoscale. Here we suggest theoretically and demonstrate experimentally, in both optics and microwave experiments, the photonic spin Hall effect enhanced by topologically protected edge states in subwavelength arrays of resonant dielectric particles. Based on direct near‐field measurements, we observe the selective excitation of the topological edge states controlled by the handedness of the incident light. Additionally, we reveal the main requirements to the symmetry of photonic structures to achieve the topology‐enhanced spin Hall effect, and also analyse the robustness of the photonic edge states against the long‐range coupling.

     

Orbit–orbit interaction and photonic orbital Hall effect in reflection of a light beam

We examine the orbit-orbit interaction when a paraxial beamwith intrinsic orbital angular momentum （IOAM） reflects at an air-glass interface. The orbital-dependent splitting of the beam intensity distribution arises due to the interaction between IOAM and extrinsic orbital angular momentum （EOAM）. In addition, we find that the beam centroid shows an orbital-dependent rotation when seen along the propagation axis. However, the motion of the beam centroid related to the orbit-orbit interaction undergoes a straight line trajectory with a small angle inclining from the propagation axis. Similar to a previously developed spin-dependent splitting in the photonic spin Hall effect, the orbital-dependent splitting could lead to the photonic orbital Hall effect.     

Intrinsic spin Hall effect in silicene: transition from spin Hall to normal insulator

An intrinsic contribution to the spin Hall effect in two‐dimensional silicene is considered theoretically within the linear response theory and Green's function formalism. When an external voltage normal to the silicene plane is applied, the spin Hall conductivity is shown to reveal a transition from the spin Hall insulator phase at low bias to the conventional insulator phase at higher voltages. This transition resembles the recently reported phase transition in bilayer graphene. The spin–orbit interaction responsible for this transition in silicene is much stronger than in graphene, which should make the transition observable experimentally. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

超构材料中的光学量子自旋霍尔效应

电子的量子自旋霍尔效应的发现推进了当今凝聚态物理学的发展,它是一种电子自旋依赖的具有量子行为的输运效应.近年来,大量的理论和实验研究表明,描述电磁波场运动规律的麦克斯韦方程组内禀了光的量子自旋霍尔效应,存在于界面的倏逝波表现出强烈的自旋与动量关联性.得益于新兴的光学材料:超构材料(metamaterials)的发展,不仅能够任意设定光学参数,同时也能引入很多复杂的自旋-轨道耦合机理,让我们能够更加清晰地了解和验证其中的物理机理.本文对超构材料中量子自旋霍尔效应做了简要的介绍,内容主要包括真空中光的量子自旋霍尔效应的物理本质、电单负和磁单负超构材料能带反转导致的不同拓扑相的界面态、拓扑电路系统中光量子自旋霍尔效应等.     

铁磁石墨烯体系的CT不变量子自旋霍尔效应

文章作者在垂直磁场作用下的铁磁石墨烯体系里预言了一种新类型的量子自旋霍尔效应.这量子自旋霍尔效应与自旋轨道耦合无关,体系也不具有时间反演不变性;但是有CT不变（C为电子-空穴变换、T为时间反演变换）.由于量子自旋霍尔效应,体系的纵向电阻和自旋霍尔阻出现量子化平台.特别是,自旋霍尔阻的量子化平台有很强的抗杂质干扰能力.     

金属薄膜中的逆自旋霍尔效应

自旋流的产生和测量是自旋电子学面临的重大挑战．逆自旋霍尔效应提供了对自旋流进行电学测量的有效手段．文章总结了近年来人们对金属薄膜中的逆自旋霍尔效应的研究,从非局域电注入、铁磁共振注入、声波共振注入和圆偏振光注入这四种不同的自旋流注入方式来介绍逆自旋霍尔效应的物理机制、实现方式和影响因素．     

光自旋霍尔效应中的交叉偏振特性研究

从光束角谱理论出发建立了描述光自旋霍尔效应的傍轴传输模型, 利用这一模型分析了光自旋霍尔效应中的交叉偏振特性. 通过分析交叉偏振效应强度和入射角变化的规律, 发现交叉偏振效应越强, 光自旋霍尔效应中的自旋分裂越大. 为便于实验观察, 将入射角选在光自旋霍尔效应较强的布儒斯特角附近, 观测到了强的交叉偏振效应. 增大交叉偏振分量的同时减小初始偏振分量, 可显著增强光自旋霍尔效应. 这一调控方法为研制基于光自旋霍尔效应的新型光子器件提供了理论基础.     

Photonic spin Hall effect and terahertz gas sensor via InSb-supported long-range surface plasmon resonance

We propose a simple one-dimensional grating coupling system that can excite multiple surface plasmon resonances for refractive index(RI)sensing with self-reference characteristics in the near-infrared band.Using theoretical analysis and the finite-difference time-domain method,the plasmonic mechanism of the structure is discussed in detail.The results show that the excited resonances are independent of each other and have different fields of action.The mode involving extensive interaction with the analyte environment achieves a high sensitivity of 1236 nm/RIU,and the figure of merit(FOM)can reach 145 RIU-1.Importantly,the mode that is insensitive to the analyte environment exhibits good self-reference characteristics.Moreover,we discuss the case of exchanging the substrate material with the analyte environment.Promising simulation results show that this RI sensor can be widely deployed in unstable and complicated environments.     

光子石墨烯中赝磁场作用下的谷霍尔效应

将石墨烯中赝磁场的产生机理运用于光子石墨烯,通过在光子石墨烯中引入晶格有规律单轴形变的方式,理论分析得到了谷依赖的均匀赝磁场,并通过数值模拟的方法观察到明显的谷霍尔效应.这种谷霍尔效应的显著程度随晶格形变度的增加而加强.在具有一定损耗的电介质材料构成的形变光子石墨烯中仍可观察到明显的谷霍尔效应.随着电介质材料损耗的增加,谷霍尔效应导致的波束转弯效果依然能够保持,只是强度逐渐变弱.类似于自旋电子学中的自旋霍尔效应,这种光子石墨烯中等效赝磁场作用下的谷霍尔效应在未来谷极化器件的设计和应用中具有重要意义.     

NiFe/Pt薄膜中角度相关的逆自旋霍尔效应

NiFe/Pt双层薄膜样品在铁磁共振时, NiFe磁矩进动所产生的自旋流注入到Pt层中, 由于逆自旋霍尔效应产生直流电压V_ISHE, 此电压会叠加到NiFe薄膜由于自旋整流效应而产生的电压V_SRE 上, 实验测量所得电压为V_ISHE和V_SRE的叠加. 为了区分这两种不同机理对电压的贡献, 本文采取旋转外加静磁场的方法, 通过分析所测电压随磁场角度的变化从而分离出V_ISHE 的大小. 研究结果表明, 相比于单层NiFe(20 nm)薄膜样品, NiFe(20 nm)/Pt(10 nm)双层膜样品中由于NiFe自旋注入到Pt 中导致铁磁共振线宽增加. 与逆自旋霍尔效应产生的电压相比, 自旋整流效应的贡献较小, 但不可忽略. 本文工作有助于认清铁磁/非磁性金属材料中的自旋相关效应, 并提供了一种准确的分析逆自旋霍尔效应的方法.     

光自旋霍尔效应及面内光自旋分离

当宽度有限的实际光束反射和折射时,左旋光和右旋光成分会发生垂直于入射面的空间分离,这一新奇的光自旋霍尔效应近来引起了人们的广泛关注.文章介绍了光自旋霍尔效应的研究进展,特别关注了纳米量级分离的测量方面进展.作者还发现在入射面内也会出现光自旋分离现象,并对这一新现象进行了理论分析和实验研究,实验测量数据和理论计算结果非常符合.     

Quantum spin Hall effect in a square-lattice model under a uniform magnetic field

We study a toy square-lattice model under a uniform magnetic field. Using the Landauer-Bttiker formula, we calculate the transport properties of the system on a two-terminal, a four-terminal and a six-terminal device. We find that the quantum spin Hall (QSH) effect appears in energy ranges where the spin-up and spin-down subsystems have different filling factors. We also study the robustness of the resulting QSH effect and find that it is robust when the Fermi levels of both spin subsystems are far away from the energy plateaus but is fragile when the Fermi level of any spin subsystem is near the energy plateaus. These results provide an example of the QSH effect with a physical origin other than time-reversal (TR) preserving spin-orbit coupling (SOC).     

The spin Hall effect in single-crystalline gold thin films

The spin Hall effect has been investigated in 10-nm-thick epitaxial Au(001) single crystal films via H-pattern devices,whose minimum characteristic dimension is about 40 nm. By improving the film quality and optimizing the in-plane geometry parameters of the devices, we explicitly extract the spin Hall effect contribution from the ballistic and bypass contribution which were previously reported to be dominating the non-local voltage. Furthermore, we calculate a lower limit of the spin Hall angle of 0.08 at room temperature. Our results indicate that the giant spin Hall effect in Au thin films is dominated not by the interior defects scattering, but by the surface scattering. Besides, our results also provide an additional experimental method to determine the magnitude of spin Hall angle unambiguously.     

Photonic spin Hall effect in PT symmetric metamaterials

We proposed and demonstrated that PT symmetric metamaterials could be used to achieve enhanced spin Hall effect (SHE) of light. We find that when laser mode is excited in PT symmetric system, the enhanced SHE could be obtained in both transmitted and reflected beams. In addition, as exceptional points (EPs) of PT symmetric system can happen for both p- and s-polarizations, the enhanced SHE of reflected light can function for both horizontally and vertically polarized incident beams. Particularly, these EPs can lead to unidirectional reflectionlessness, asymmetric SHE with maximum contrast ratio of 48 is obtained by launching light beams near EPs. Our work opens up a new path to obtain enhanced transverse displacement for both reflected and transmitted light and enables more opportunities in manipulating photonic SHE.     

掺铌SrTiO_3中的逆自旋霍尔效应

采用磁控溅射法在未掺杂和掺杂的SrTiO_3基片上沉积了NiFe薄膜,通过翻转测试法分离出掺杂样品中的自旋整流电压和逆自旋霍尔电压.研究结果表明:在未掺杂的SrTiO_3基片中,翻转前后测试的电压曲线基本一致,为NiFe薄膜自旋整流效应产生的电压.对于掺Nb浓度x为0.028, 0.05, 0.1, 0.15, 0.2的SrTiO_3基片,分离出的逆自旋霍尔电压随掺杂浓度增加而减小,在掺杂浓度为0.15和0.2的样品中没有探测到明显的逆自旋霍尔电压.本文的结果表明,在SrTiO_3中掺入强自旋轨道耦合的杂质,通过掺杂浓度可以实现对SrTiO_3中逆自旋霍尔效应的调控,这类可调控的自旋相关研究为自旋电子器件的研究和开发提供了更多的可能性,具有很大的潜在应用价值.